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71. 发明授权

US07254154B2 DFB laser with a distributed reflector and photonic band gap 有权
标题翻译： DFB激光器具有分布式反射器和光子带隙
公开(公告)号：US07254154B2
公开(公告)日：2007-08-07
申请号：US10520837
申请日：2003-07-04
申请人： Bruno Thedrez
发明人： Bruno Thedrez
IPC分类号： H01S3/08
CPC分类号： H01S5/12 , H01S5/10 , H01S5/105 , H01S5/1228 , H01S5/1237 , H01S5/125 , H01S5/2205 , H01S5/227
摘要： The invention relates to a semiconductor laser consisting of an active waveguide comprising an active region surrounded by a filling material and which is coupled to a distributed reflector. Said distributed reflector is made from the aforementioned filling material and is disposed along the length of the lateral sides of the active region essentially parallel to same and in the form of a structuring having a photonic band gap along the longitudinal axis of the laser. According to the invention, the structuring defines a first photonic crystal with columns forming diffracting elements, said crystal comprising a mesh having dimensions of the order of the wavelength of photons in the guided mode which circulate in the active waveguide.
摘要翻译：本发明涉及一种由有源波导组成的半导体激光器，该有源波导包括由填充材料包围并且与分布式反射器耦合的有源区域。所述分布式反射器由上述填充材料制成，并且沿着有源区域的横向侧面的长度基本上平行于相同并且具有沿着激光器的纵向轴线的具有光子带隙的结构形式设置。根据本发明，结构定义了具有形成衍射元件的列的第一光子晶体，所述晶体包括具有在有源波导中循环的引导模式中的光子的波长的尺寸的尺寸的网格。

72. 发明授权

US07065108B2 Method of wavelength tuning in a semiconductor tunable laser 有权
标题翻译：半导体可调激光器中的波长调谐方法
公开(公告)号：US07065108B2
公开(公告)日：2006-06-20
申请号：US10744457
申请日：2003-12-22
申请人： Sahng Gi Park , Moon Ho Park , Ji Myon Lee , Su Hwan Oh , Kyong Hon Kim
发明人： Sahng Gi Park , Moon Ho Park , Ji Myon Lee , Su Hwan Oh , Kyong Hon Kim
IPC分类号： H01S3/10
CPC分类号： H01S5/10 , G02B6/12004 , G02B6/124 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/0607 , H01S5/06255 , H01S5/0654 , H01S5/101 , H01S5/1025 , H01S5/1082 , H01S5/12 , H01S5/1212 , H01S5/1237 , H01S5/1243 , H01S5/125 , H01S5/14
摘要： A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying electric field or current to the electrode and tuning can consecutively performed over the wide wavelength band by the consecutive shift of the angle of the intra cavity laser beam.
摘要翻译：公开了一种包括法布里 - 珀罗滤波器和电极阵列的可调谐半导体激光器。空腔中的光束的传播方向可以连续地向电极施加电场或电流，并且可以通过腔内激光束的角度的连续移动在宽波长带上连续执行调谐。

73. 发明申请

US20060120421A1 Semiconductor laser and manufacturing method thereof 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20060120421A1
公开(公告)日：2006-06-08
申请号：US11113054
申请日：2005-04-25
申请人： Manabu Matsuda , Tsuyoshi Yamamoto
发明人： Manabu Matsuda , Tsuyoshi Yamamoto
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/0421 , H01S5/0425 , H01S5/12 , H01S5/1231 , H01S5/1237 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/3434 , H01S5/34373
摘要： In a semiconductor laser, in order to realize a desired oscillation wavelength efficiently by adjusting the oscillation wavelength of the laser with sufficient accuracy even when the oscillation wavelength of a manufactured laser deviates from a design value, for example, due to the manufacturing errors and the like in the manufacturing of the laser, there is provided a semiconductor laser comprising a semiconductor substrate, a semiconductor stacking body including a waveguide formed on the semiconductor substrate, and a diffraction grating, wherein the diffraction grating is formed along the waveguide so as to appear in the surface of the semiconductor stacking body.
摘要翻译：在半导体激光器中，即使制造的激光器的振荡波长例如由于制造误差而偏离设计值，为了通过以足够的精度调整激光的振荡波长来有效地实现期望的振荡波长，像制造激光器一样，提供了一种包括半导体衬底的半导体激光器，包括形成在半导体衬底上的波导的半导体堆叠体和衍射光栅，其中衍射光栅沿着波导形成以便出现在半导体堆叠体的表面。

74. 发明授权

US06770499B1 Method of making DBR grating 失效
标题翻译：制作DBR光栅的方法
公开(公告)号：US06770499B1
公开(公告)日：2004-08-03
申请号：US10625415
申请日：2003-07-23
申请人： Yeong-Ning Chyr
发明人： Yeong-Ning Chyr
IPC分类号： H01L2100
CPC分类号： H01S5/223 , H01S5/1231 , H01S5/1237 , H01S5/125 , H01S5/168
摘要： A DBR grating may be created in the cladding of a wafer by defining a non-gain window area, advantageously at the end of the wafer. The non-gain area may be defined either by removing all layers above the cladding layer at the window portion or, preferably, by halting the MOCVD process once the cladding layer has been created and by selectively removing from a portion of the cladding layer a protective coating, advantageously of SiO2, Si3N4, or a metal, to define the window area. A photo resist is applied, and the wafer is exposed to interfering laser beams to create a grating pattern in the photoresist, conveniently without the need for any particular effort to confine either the photoresist or the interfering beams solely to the window area. The photoresist is developed and an etchant used to transfer the pattern into the cladding layer. The protective layer is then removed and non-gain layers may be laid down in the usual manner, the protective layer having prevented the grating pattern from being created anywhere but in the window area.
摘要翻译：可以通过限定非增益窗口区域，有利地在晶片的端部，在晶片的包层中产生DBR光栅。非增益区域可以通过在窗口部分去除包覆层上方的所有层来限定，或者优选地，一旦形成包覆层就停止MOCVD工艺，并且通过从包覆层的一部分选择性地去除保护层有利地涂覆SiO 2，Si 3 N 4或金属以限定窗口区域。施加光刻胶，并且晶片暴露于干涉激光束以在光致抗蚀剂中产生光栅图案，而不需要任何特别的努力将光致抗蚀剂或干涉光束仅限于窗口区域。显影光致抗蚀剂和用于将图案转移到包层中的蚀刻剂。然后去除保护层，并且以通常的方式可以铺设非增益层，保护层防止了光栅图案在任何地方，但在窗口区域中创建。

75. 发明授权

US06573116B2 Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same 失效
标题翻译：脊式半导体激光器的横向耦合分布式反馈及其制造方法
公开(公告)号：US06573116B2
公开(公告)日：2003-06-03
申请号：US09908560
申请日：2001-07-20
申请人： Yoshiaki Watanabe , Kiyoshi Takei , Nong Chen , Kiyofumi Chikuma
发明人： Yoshiaki Watanabe , Kiyoshi Takei , Nong Chen , Kiyofumi Chikuma
IPC分类号： H01L2100
CPC分类号： H01S5/22 , H01S5/12 , H01S5/1231 , H01S5/1237 , H01S5/209
摘要： There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cladding layer to form two lateral flat portions from the cladding layer, by a selective wet etching, so as to form a ridge stripe protruding therefrom and having a flat top portion at which the stripe mask capped. A grating mask is formed on the two lateral flat portions, side walls of the ridge stripe and the stripe mask. The grating mask has a periodic structure in the direction in which the ridge stripe extends. The two lateral flat portions and the side walls of the ridge stripe are dry-etched through the grating mask and then the two lateral flat portions and the side walls of the ridge stripe are wet-etched to form a grating of the material for the ridge stripe on the two lateral flat portions, the side walls of the ridge stripe and the active layer, so as to define a bracket grating portion adjacent to the ridge stripe.
摘要翻译：提供了一种制造脊型LC-DFB半导体激光器的方法，其中具有由用于形成在由半导体制成的有源层上的用于脊条的材料制成的包层的激光基板。在包覆层上形成条纹掩模，通过选择性湿蚀刻从包覆层形成两个横向平坦部分，从而形成从其突出的脊条，并且具有条形掩模封盖的平坦的顶部。在两个侧面平坦部分，脊条和条纹掩模的侧壁上形成光栅掩模。栅格掩模在脊条延伸的方向上具有周期性结构。通过光栅掩模对棱条的两个横向平坦部分和侧壁进行干蚀刻，然后将脊条的两个侧向平坦部分和侧壁湿法蚀刻以形成用于脊的材料的光栅在两个横向平坦部分上的条纹，脊状条的边壁和有源层，以便限定与脊条相邻的托架光栅部分。

76. 发明申请

US20030043874A1 Semiconductor laser with a weakly coupled grating 有权
公开(公告)号：US20030043874A1
公开(公告)日：2003-03-06
申请号：US10212463
申请日：2002-08-05
申请人： nanoplus GmbH
发明人： Johann Peter Reithmaier , Lars Bach
IPC分类号： H01S005/00
CPC分类号： H01S5/12 , H01S5/06256 , H01S5/1203 , H01S5/1228 , H01S5/1231 , H01S5/1237 , H01S5/125 , H01S5/22
摘要： A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

77. 发明申请

US20020141467A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20020141467A1
公开(公告)日：2002-10-03
申请号：US09930130
申请日：2001-08-16
申请人： THE FURUKAWA ELECTRIC CO., LTD
发明人： Norihiro Iwai , Masaki Funabashi
IPC分类号： H01S005/00
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/1039 , H01S5/1064 , H01S5/12 , H01S5/1237 , H01S5/2215 , H01S5/227 , H01S5/3409
摘要： The semiconductor laser device the n-InP cladding layer, SCH-MQW active layer, p-InP cladding layer, and p-GaInAsP optical waveguide layer are respectively formed into a tapered shape on the n-InP substrate. The combination of oscillation parameters of the tapered shape, the grating pitch of a diffraction grating, an optical waveguide including an active layer, and the length of a resonator are adjusted so that laser beam including two or more oscillating longitudinal modes are output.
摘要翻译：半导体激光器件n-InP包层，SCH-MQW有源层，p-InP包层和p-GaInAsP光波导层分别在n-InP衬底上形成为锥形形状。调整锥形形状的振荡参数，衍射光栅的光栅间距，包括有源层的光波导和谐振器的长度的组合，从而输出包括两个或更多个振荡纵向模式的激光束。

78. 发明授权

US4769822A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4769822A
公开(公告)日：1988-09-06
申请号：US910530
申请日：1986-09-23
申请人： Takahiro Suyama , Kohsei Takahashi , Saburo Yamamoto , Toshiro Hayakawa , Masafumi Kondo
发明人： Takahiro Suyama , Kohsei Takahashi , Saburo Yamamoto , Toshiro Hayakawa , Masafumi Kondo
IPC分类号： H01S5/00 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/34 , H01S3/19
CPC分类号： H01S5/12 , H01S5/1237 , H01S5/2059 , H01S5/2231 , H01S5/3428
摘要： A semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets in the region, except for the region corresponding to said striped diffusion region, which is positioned at the interface between the optical guiding layer and the second cladding layer.
摘要翻译：一种半导体激光器件，包括依次包含第一包层，有源层，光导层和第二包层的激光振荡操作区域，其中从一个第一包层形成带状杂质扩散区域除了对应于所述条纹扩散区域的区域之外，与该区域中的两个小平面平行地形成具有间隔的间距的多个窄带的GaAs的另一个面和多个窄带的GaAs，所述区域位于光引导层和第二覆层。

79. 发明申请

WO2010057455A3 EDGE-EMITTING SEMICONDUCTOR LASER CHIP 审中-公开
标题翻译：激光器芯片的边缘发射半导体
公开(公告)号：WO2010057455A3
公开(公告)日：2010-12-23
申请号：PCT/DE2009001482
申请日：2009-10-21
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LAUER CHRISTIAN , KOENIG HARALD , REILL WOLFGANG , STRAUSS UWE
发明人： LAUER CHRISTIAN , KOENIG HARALD , REILL WOLFGANG , STRAUSS UWE
IPC分类号： H01S5/22 , H01S5/042 , H01S5/10
CPC分类号： H01S5/0425 , H01S5/02284 , H01S5/0655 , H01S5/10 , H01S5/1017 , H01S5/1053 , H01S5/1064 , H01S5/1228 , H01S5/1234 , H01S5/1237 , H01S5/2036 , H01S5/2205 , H01S5/4012 , H01S5/4031 , H01S2301/166 , H01S2301/18
摘要： The invention relates to an edge-emitting semiconductor laser chip (1), comprising - a semiconductor body (100), which comprises at least one active zone (14) in which electromagnetic radiation (10) is generated during operation of the semiconductor laser chip (1), - at least one contact strip (2), which is arranged on a cover surface (1a) on a top of the semiconductor body (100), and - at least two delimiting structures (4) for delimiting the current spreading between the contact strip (2) and the active zone (14), wherein - the delimiting structures (4) are arranged on both sides of the contact strip (2).
摘要翻译：所述边发射半导体激光器芯片（1），包括： - 一个半导体主体（100）包括，其中在半导体激光芯片的操作（1）的辐射被产生（10）的至少一个有源区（14），电磁， - 设置在至少一个接触片（2）顶面（1a）中被设置在半导体主体（100）的上表面上，和 - 至少两个限制结构（4），用于限制电流的接触带（2）和有源区（14），其中间铺展 - 限制结构（4）的两侧设置在接触带（2）。

80. 发明申请

WO2010057955A3 EDGE-CENTERING SEMICONDUCTOR LASER 审中-公开
标题翻译：边发射半导体激光器
公开(公告)号：WO2010057955A3
公开(公告)日：2010-07-22
申请号：PCT/EP2009065488
申请日：2009-11-19
申请人： FRAUNHOFER GES FORSCHUNG , OSRAM OPTO SEMICONDUCTORS GMBH , ECKSTEIN HANS-CHRISTOPH , ZEITNER UWE D , SCHMID WOLFGANG
发明人： ECKSTEIN HANS-CHRISTOPH , ZEITNER UWE D , SCHMID WOLFGANG
IPC分类号： H01S5/10 , H01S5/028 , H01S5/12 , H01S5/16 , H01S5/20
CPC分类号： H01S5/10 , H01S5/028 , H01S5/0655 , H01S5/1064 , H01S5/1203 , H01S5/1237 , H01S5/16 , H01S5/2036 , H01S2301/176
摘要： An edge-centering semiconductor laser is provided, comprising a semiconductor body (1) having a wave guide area (2). The wave guide area (2) comprises a lower cover layer (3a), a lower wave guide layer (4a), an active layer (5) for generating laser radiation, an upper wave guide layer (4b) and an upper cover layer (3b). The wave guide area (2) also comprises at least one structured laser radiation scattering area (6) in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.
摘要翻译：有一个边发射半导体激光器包括具有（2）所示的波导区域的半导体主体（1）。波导区域（2）具有下包层（3a）中，下波导层（4a）中，用于产生激光辐射，上波导层（4b）的和的上包层（3b）中的有源层（5）。此外，波导区（2）上的至少一个结构化的区域（6）用于散射激光辐射，其中激光辐射的横向基本模式经历高于激光模式的辐射损耗少。

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