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    • 75. 发明授权
    • Magneto-optical recording medium production method
    • 磁光记录介质的生产方法
    • US5876807A
    • 1999-03-02
    • US961140
    • 1997-10-30
    • Yoshihiro Muto
    • Yoshihiro Muto
    • G11B11/10G11B11/105H01F1/00
    • G11B11/10582G11B11/10591G11B11/10506G11B11/10521
    • The present invention provides a method for producing a magneto-optical recording medium capable of optical intensity modulation direct overwriting, which method enables to easily form an initialization layer having an excellent stability against the magnetization inversion during the optical intensity modulation direct overwriting.When producing a magneto-optical recording medium at least a memory layer 1 which is magnetized according to a recording signal, a recording layer 2 whose magnetization direction is temporarily changed according to a recording signal during a recording, a switch layer 3 which is temporarily demagnetized during a recording, and an initialization layer 4 whose magnetization direction is not changed during a recording; the memory layer 1 is formed by forming at least a first magnetic layer 1a having a residual magnetization Mr smaller than a saturation magnetization Ms and a second magnetic layer 1b having a ratio Mr/Ms between the residual magnetization Mr and the saturation magnetization Ms greater than that of the first magnetic layer. Moreover, when forming the second magnetic layer 1b, an external magnetic field is applied almost in the vertical direction to the film surface.
    • 本发明提供了一种制造能够进行光强度调制直接重写的磁光记录介质的方法,该方法能够在光强调制直接重写期间容易地形成对磁化反转具有优异的稳定性的初始化层。 当至少存储层1产生磁光记录介质时,根据记录信号被磁化的记录层1,记录期间根据记录信号使磁化方向临时变化的记录层2,暂时退磁的开关层3 以及在记录期间磁化方向不改变的初始化层4; 存储层1通过至少形成具有小于饱和磁化强度Ms的剩余磁化强度Mr的第一磁性层1a和残余磁化强度Mr与饱和磁化强度Ms之间的Mr / Ms比率的第二磁性层1b大于 第一磁性层的。 此外,当形成第二磁性层1b时,几乎在与膜表面垂直的方向上施加外部磁场。
    • 80. 发明授权
    • Magneto-optical media
    • 磁光介质及其制造方法
    • US5667887A
    • 1997-09-16
    • US85474
    • 1993-06-28
    • Hiromu MiyazawaShinya OotsukiTakeo KawaseSatoshi Nebashi
    • Hiromu MiyazawaShinya OotsukiTakeo KawaseSatoshi Nebashi
    • G11B11/10G11B11/105G11B5/66B05D5/12
    • G11B11/10586G11B11/10591G11B11/10593Y10S428/90Y10T428/26Y10T428/265
    • The present invention relates to a magneto-optical media. More particularly, the present invention relates to a device for assuring a high S/N ratio by controlling the optical phase difference of the media by optimizing the film structure of a multi-layered thin film. The structure of the multi-layered thin film is such that the first protective film of a thickness between 400 .ANG. and 700 .ANG., a recording film of a thickness between 150 .ANG. and 300 .ANG., the second protective film of a thickness between 150 .ANG. and 250 .ANG., and a reflecting film of a thickness between 400 .ANG. and 800 .ANG., are successively laminated on a substrate. The first protective layer and the second protective layer are both suitably made of AlSiN, SiN, or SiO.sub.2 having refractivity between 1.95 and 2.05. The recording layer has a composition:Nd.sub.x Dy.sub.y (FeCo).sub.100-x-y,orNd.sub.x (DyTb).sub.y (Fe.sub.1-z Co.sub.z).sub.100-x-y,where25 at %.ltoreq.x+y.ltoreq.30 at %,0 at %.ltoreq.x.ltoreq.8 at %, and0.07 at %.ltoreq.z.ltoreq.0.43 at %.
    • 本发明涉及一种磁光介质。 更具体地,本发明涉及通过优化多层薄膜的膜结构来控制介质的光学相位差来确保高S / N比的装置。 多层薄膜的结构使得厚度在400至700之间的第一保护膜,厚度介于150至300之间的记录膜,厚度在150和第二层之间的第二保护膜, 250 ANGSTROM和厚度在400和800之间的反射膜依次层压在基片上。 第一保护层和第二保护层均适宜地由折射率在1.95和2.05之间的AlSiN,SiN或SiO 2制成。 记录层具有Nd x D y y(FeCo)100-xy或Nd x(DyTb)y(Fe 1-z Co z)100-xy的组成,其中25at%