专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20150003492A1 THERMAL RESISTANCE MEASURING METHOD AND THERMAL RESISTANCE MEASURING DEVICE 有权
标题翻译：耐热测量方法和耐热电阻测量装置
公开(公告)号：US20150003492A1
公开(公告)日：2015-01-01
申请号：US14302206
申请日：2014-06-11
申请人： FUJI ELECTRIC CO., LTD.
发明人： Toshiyuki MIYANAGI , Yuichiro HINATA
IPC分类号： G01N25/18
CPC分类号： H01L23/34 , G01R31/2619 , G01R31/2628 , H01L23/3735 , H01L2924/0002 , H01L2924/00
摘要： A temperature of a semiconductor element is measured based on a temperature coefficient of a voltage between the first electrode and the second electrode when no heat is generated when causing a constant current of an extent such that the semiconductor element does not generate heat to be input wherein current is caused to flow from a third electrode to a second electrode in accordance with voltage applied between a first electrode and the second electrode. Also, a constant current such that the semiconductor element generates heat is input into the third electrode, with voltage applied between the first electrode and second electrode of the semiconductor element kept constant, and power is measured based on the current such that the semiconductor element generates heat and on voltage when heat is generated between the third electrode and second electrode when the semiconductor element generates heat.
摘要翻译：当半导体元件不产生热量输入的恒定电流时，在不产生热的情况下，基于第一电极和第二电极之间的电压的温度系数来测量半导体元件的温度，根据施加在第一电极和第二电极之间的电压，使电流从第三电极流到第二电极。此外，将半导体元件发热的恒定电流输入到第三电极中，施加在半导体元件的第一电极和第二电极之间的电压保持恒定，并且基于电流测量功率，使得半导体元件产生当半导体元件产生热量时，在第三电极和第二电极之间产生热量时的热和导通电压。

72. 发明申请

US20140021973A1 APPARATUS AND METHOD FOR POWER CYCLE TEST 有权
标题翻译：电源循环测试的装置和方法
公开(公告)号：US20140021973A1
公开(公告)日：2014-01-23
申请号：US13944686
申请日：2013-07-17
申请人： ESPEC CORP.
发明人： Michiya Kusaka
IPC分类号： G01R31/26
CPC分类号： G01R31/2619
摘要： Provided is a power cycle test apparatus that eliminates the need to measure a thermal resistance in a power cycle test and that pursues power saving in the evaluation of IGBT reliability by exactly applying a required thermal stress through the automatic adjustment of a stress current. The power cycle test apparatus performs a power cycle test for an IGBT to be tested by applying a thermal stress to the IGBT to be tested through the intermittent application of a stress current thereto. The apparatus applies the stress current to the IGBT to be tested and thereafter applies a current for measurement to the IGBT to be tested to measure a collector-emitter voltage of the IGBT to be tested. The apparatus further obtains a junction temperature of the IGBT to be tested from the measured collector-emitter voltage and a temperature coefficient of the IGBT to be tested.
摘要翻译：提供了一种功率循环测试装置，其消除了在功率循环测试中测量热阻的需要，并且通过在应力电流的自动调整中精确地施加所需的热应力来追求节能以评估IGBT的可靠性。动力循环试验装置通过向应力电流的间歇施加对待测试的IGBT施加热应力来对要测试的IGBT进行功率循环试验。该装置将应力电流施加到要测试的IGBT，然后将待测电流用于测量的IGBT，以测量待测IGBT的集电极 - 发射极电压。该装置还从所测得的集电极 - 发射极电压和待测IGBT的温度系数中获得待测IGBT的结温。

73. 发明授权

US5121975A Fail-safe photoelectric detector 失效
标题翻译：故障安全光电探测器
公开(公告)号：US5121975A
公开(公告)日：1992-06-16
申请号：US697307
申请日：1991-05-08
申请人： Dean L. Dahnert
发明人： Dean L. Dahnert
IPC分类号： A47B53/00 , F16P3/14 , G01R31/26
CPC分类号： F16P3/14 , A47B53/00 , F16P3/144 , G01R31/2619
摘要： A control circuit for continually testing a photoelectric detector. The detector includes a light source, and a photoelectric receiver having a predetermined drop-out time, attached to a movable storage carriage, spaced apart and substantially sightaligned. The carriage has a reversible electric motor which is controlled by the control circuit, including at least two relays, the contacts of which are connected in series so that the contacts of both must be closed in order for the motor to be energized. The relay drop-out time is substantially longer than the receiver drop-out time. In the circuit, an inverter is connected between the second coil and the light source. This inverter inverts signals received from the second coil and passes them to the light source so that receipt of a signal at the receiver causes the light source to turn off, in turn causing a loss of signal at the receiver, resulting in the light source turning on. An oscillation is thus established which passses through each component of the monitoring circuit and the detector. The drop-out time of the relays is long enough that the relays stay closed unless the oscillation is stopped, either by a failure of the monitoring circuit or light source or receiver, or by the light beam being broken. In either case, one or both of the relays opens, disabling the carriage from moving.
摘要翻译：用于连续测试光电探测器的控制电路。检测器包括光源和具有预定脱出时间的光电接收器，附接到可移动存储托架，间隔开并且基本上配准。滑架具有由控制电路控制的可逆电动机，包括至少两个继电器，其触点串联连接，使得两者的触点必须闭合以使电动机通电。继电器辍学时间比接收机辍学时间长得多。在该电路中，逆变器连接在第二线圈和光源之间。该逆变器反转从第二线圈接收的信号并将其传递到光源，使得在接收器处的信号的接收使得光源关闭，从而导致接收器处的信号丢失，导致光源转向上。因此建立了通过监控电路和检测器的每个部件的振荡。继电器的断开时间足够长，继电器保持闭合，除非振荡停止，否则监控电路或光源或接收器故障或光束被破坏。在任一情况下，一个或两个继电器打开，禁止运输。

74. 发明授权

US4368425A System for and method of testing transistors 失效
标题翻译：测试晶体管的系统和方法
公开(公告)号：US4368425A
公开(公告)日：1983-01-11
申请号：US209894
申请日：1980-11-24
申请人： Robert W. Adams
发明人： Robert W. Adams
IPC分类号： G01R31/26 , G01R31/22
CPC分类号： G01R31/2619
摘要： An improved system for and method of testing a transistor for its V.sub.be -I.sub.c characteristics independent of temperature is disclosed. The system for carrying out the method comprises means for generating a first signal which varies with temperature in accordance with the base-to-emitter voltage of the transistor as a function of temperature and means for generating a second signal which varies with temperature in accordance with the transconductance gain of the transistor as a function of temperature. Means are provided for modifying at least one of the first and second signals so that as modified the two signals vary with temperature in an equal and opposite manner to one another. The system also includes means for adding the two signals as modified so as to provide an output signal representative of the V.sub.be -I.sub.c characteristics of the transistor independent of temperature.
摘要翻译：公开了独立于温度的用于其Vbe-Ic特性的改进的晶体管测试系统和方法。用于执行该方法的系统包括用于产生随着温度变化的第一信号的装置，该第一信号根据晶体管的基极 - 发射极电压作为温度的函数而变化，并且用于产生根据温度随温度变化的第二信号的装置晶体管的跨导增益作为温度的函数。提供了用于修改第一和第二信号中的至少一个信号的装置，使得经修改后，两个信号以相同和相反的方式随温度变化。该系统还包括用于将经修改的两个信号相加的装置，以便提供代表独立于温度的晶体管的Vbe-Ic特性的输出信号。

75. 发明授权

US2872644A Measurement of transistor thermal resistance 失效
标题翻译：晶体管热阻测量
公开(公告)号：US2872644A
公开(公告)日：1959-02-03
申请号：US62752056
申请日：1956-12-10
申请人： BERNARD REICH
发明人： BERNARD REICH
IPC分类号： G01R31/26
CPC分类号： G01R31/2619

76. 发明申请

US20190250205A1 THERMAL MODEL BASED HEALTH ASSESSMENT OF IGBT 审中-公开
公开(公告)号：US20190250205A1
公开(公告)日：2019-08-15
申请号：US15895425
申请日：2018-02-13
申请人： GM GLOBAL TECHNOLOGY OPERATIONS LLC
发明人： Azeem Sarwar , Madi Zholbaryssov , Wesley G. Zanardelli , Yo Chan Son
IPC分类号： G01R31/26 , G06F17/50 , G08B21/18
CPC分类号： G01R31/2619 , G06F17/5036 , G08B21/182 , H01L23/3735 , H01L25/18 , H01L29/7393 , H01L29/861 , H02P27/06
摘要： An apparatus and method for determining occurrence of a fault at an insulated-gate bipolar transistor (IGBT) module is disclosed. The IGBT module and apparatus can be part of an electric vehicle. A sensor obtains a measurement of a thermal parameter of the IGBT module. A processor receives the measured thermal parameter from the sensor, and runs a model of the IGBT module to determine a thermal parameter of the IGBT module under normal operation conditions. The processor provides an alert signal to indicate the occurrence of the fault when a difference between the estimated thermal parameter and the measured thermal parameter is greater than or equal to a selected threshold.

77. 发明申请

US20180269677A1 SEMICONDUCTOR ELEMENT DRIVING DEVICE 审中-公开
公开(公告)号：US20180269677A1
公开(公告)日：2018-09-20
申请号：US15986359
申请日：2018-05-22
申请人： FUJI ELECTRIC CO., LTD.
发明人： Takuo YAMAMURA
IPC分类号： H02H7/122 , H02H1/00 , H02M1/08 , H02M7/5387 , H03K17/0812 , G01R19/165 , G01R31/26 , G01R31/42
CPC分类号： H02H7/122 , G01R19/16547 , G01R31/2619 , G01R31/42 , H02H1/0007 , H02H1/0061 , H02H7/222 , H02M1/08 , H02M1/32 , H02M7/5387 , H02M7/53871 , H02M2001/327 , H03K17/08128 , H03K17/0828 , H03K17/18 , H03K19/20 , H03K2017/0806
摘要： A semiconductor element driving device including: plural detection units configured to detect information necessary for protection operation for a semiconductor element included in a power conversion device; a protection signal generation unit configured to generate a protection signal having a pulse width different according to each of the plural detection units when the plural detection units detect the information necessary for the protection operation; a protection state monitoring unit configured to generate a protection state signal while any of the plural detection units is detecting the information necessary for the protection operation; and a signal output unit configured to output an alarm signal, the alarm signal changing from a first level to a second level when the protection signal and the protection state signal are input, and changing to an intermediate level between the first level and the second level when the input of the protection signal is stopped.

78. 发明授权

US09927483B2 Method and device for determining the temperature calibration characteristic curve of a semiconductor component appertaining to power electronics 有权
公开(公告)号：US09927483B2
公开(公告)日：2018-03-27
申请号：US14385936
申请日：2013-03-16
申请人： Siemens Aktiengesellschaft
发明人： Marco Bohlländer , Christian Herold , Sebastian Hiller
IPC分类号： G01R31/26
CPC分类号： G01R31/2603 , G01R31/2619
摘要： The temperature calibration characteristic curve of a semiconductor component can be readily determined by interconnecting the power connections of the semiconductor component with a first current source for a load current, a second current source for a measurement current and a voltmeter for measuring the voltage drop across the power connections. Furthermore, the semiconductor component is connected to a data processing system and heated by the dissipated power at time intervals when the first current source is connected, and the voltage drop across the power or auxiliary connections is measured when the first current source disconnected and the second current source is connected between the intervals after a time duration determined by the thermal main time constant of the semiconductor component. The temperature of the semiconductor component is separately measured and the temperature calibration characteristic curve is obtained by correlating the measured temperature with the voltage drop.

79. 发明申请

US20180017612A1 Method For Determining A Deterioration Of Power Semiconductor Modules As Well As A Device And Circuit Arrangement 审中-公开
公开(公告)号：US20180017612A1
公开(公告)日：2018-01-18
申请号：US15548201
申请日：2015-12-18
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Jimmy-Alexander BURTON-CCOCA , Andreas LINDEMANN , Gerhard MITIC
IPC分类号： G01R31/26 , G01K3/10
CPC分类号： G01R31/2619 , G01K3/10 , G01K7/01 , G01R31/046 , G01R31/2608 , G01R31/261 , G01R31/2612 , G01R31/2614 , G01R31/2628 , G01R31/2642 , H02M2001/327 , H03K2017/0806
摘要： The present disclosure relates to power semiconductor modules. The teachings thereof may be embodied in modules with a power semiconductor component and methods, as well as a circuit arrangement. For example, a method may include: developing a thermal model of the power semiconductor module at a reference time point; establishing a reference temperature based on the thermal model; measuring a temperature-sensitive electrical parameter of the power semiconductor module during operation of the power semiconductor module; determining a current temperature from the measured temperature-sensitive electrical parameter of the power semiconductor module; calculating a temperature difference between the current temperature and the reference temperature; and determining a deterioration of the power semiconductor module based on the calculated temperature difference.

80. 发明授权

US09869722B1 Method and apparatus for electrical component life estimation 有权
公开(公告)号：US09869722B1
公开(公告)日：2018-01-16
申请号：US15293655
申请日：2016-10-14
申请人： Rockwell Automation Technologies, Inc.
发明人： Garron K. Morris
IPC分类号： G01R31/02 , G01R31/34 , G01R31/27 , G01R31/26 , G01R31/36
CPC分类号： G01R31/343 , G01R31/2619 , G01R31/27 , G01R31/2849
摘要： Systems and methods for estimating electrical component degradation caused by an operating parameter that stresses the component in a series of stress cycles, in which cycle count values are maintained which individually correspond to a range of values of the operating parameter, and a plurality of maximum cycle values are stored, which individually correspond to one of the ranges and represent the number of stress cycles in the corresponding range at which the component is expected to have a user defined failure probability value. For a given stress cycle, one of the count values is incremented that corresponds to the range that includes a measured or sensed value, and a cumulative degradation value for the electrical system component is computed as a sum of ratios of the individual count values to the corresponding maximum cycle values.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式