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71. 发明授权

US09450545B2 Dual-band semiconductor RF amplifier device 有权
标题翻译：双频半导体射频放大器
公开(公告)号：US09450545B2
公开(公告)日：2016-09-20
申请号：US14267715
申请日：2014-05-01
申请人： Ampleon Netherlands B.V.
发明人： Venkata Gutta , Anna Walensieniuk , Rob Volgers
IPC分类号： H03F3/04 , H03F3/193 , H03F3/195 , H03F3/21
CPC分类号： H03F3/193 , H03F3/195 , H03F3/21 , H03F2200/111 , H03F2200/387 , H03F2200/429
摘要： There is described a dual-band semiconductor RF amplifier device. The device comprises (a) a transistor (205) having an output capacitance (CO), (b) a first shunt element (210) arranged in parallel with the output capacitance, the first shunt element comprising a first shunt inductor (L1) connected in series with a first shunt capacitor (C1), and (c) a second shunt element (220) arranged in parallel with the first shunt capacitor, the second shunt element comprising a second shunt inductor (L2) connected in series with a second shunt capacitor (C2), wherein the capacitance of the second shunt capacitor (C2) is at least two times the capacitance of the first shunt capacitor (C1). Furthermore, there is described a method of manufacturing a dual-band semiconductor RF amplifier device and a dual-band RF amplifier comprising a plurality of such amplifier devices.
摘要翻译：描述了一种双频带半导体RF放大器装置。该器件包括（a）具有输出电容（CO）的晶体管（205），（b）与输出电容并联布置的第一分流元件（210），第一分流元件包括连接的第一并联电感器与第一分流电容器（C1）串联，和（c）与第一分流电容器并联布置的第二分流元件（220），第二分流元件包括与第二分流器串联连接的第二并联电感器（L2）电容器（C2），其中所述第二并联电容器（C2）的电容为所述第一并联电容器（C1）的电容的至少两倍。此外，描述了制造双频半导体RF放大器装置的方法和包括多个这种放大器装置的双频带RF放大器。

72. 发明授权

US09444421B2 Combiner circuit for a class-E outphasing power amplifier 有权
标题翻译：用于E类外相功率放大器的组合电路
公开(公告)号：US09444421B2
公开(公告)日：2016-09-13
申请号：US14444736
申请日：2014-07-28
申请人： Ampleon Netherlands B.V.
发明人： Mark Pieter van der Heijden
IPC分类号： H03H7/38 , H03F3/68 , H03F1/02 , H03F1/56 , H03F3/217 , H03H7/46
CPC分类号： H03F3/68 , H01L2224/49113 , H01L2224/49175 , H03F1/0294 , H03F1/565 , H03F3/2176 , H03F2200/387 , H03F2200/391 , H03F2203/21139 , H03H7/463
摘要： Lumped-element based class-E Chireix combiners are disclosed that are equivalents of a quarter-wave transmission line combiner. The proposed class-E equivalent power amplifier circuits that are used can be derived from a parallel tuned class-E implementation. The proposed low-pass equivalents can behave similarly in terms of class-E performance, but absorb the 90 degree transmission line.
摘要翻译：公开了基于集中元件的E类Chireix组合器，它们是四分之一波长传输线组合器的等同物。所使用的所提出的E类等效功率放大器电路可以从并行调谐的E类实现中导出。提出的低通等效物在类E性能方面可以表现相似，但吸收90度传输线。

73. 发明授权

US09362871B2 Wideband amplifier 有权
标题翻译：宽带放大器
公开(公告)号：US09362871B2
公开(公告)日：2016-06-07
申请号：US14444106
申请日：2014-07-28
申请人： Ampleon Netherlands B.V.
发明人： Jawad Hussain Qureshi
IPC分类号： H03F3/21 , H03F3/193 , H03F3/68 , H03F1/02 , H03F1/56 , H03F3/45 , H03F3/60 , H01P1/18 , H01P5/18
CPC分类号： H03F3/211 , H01P1/184 , H01P5/187 , H03F1/0288 , H03F1/56 , H03F3/193 , H03F3/45183 , H03F3/604 , H03F2200/09 , H03F2200/192 , H03F2200/198 , H03F2200/204 , H03F2200/423 , H03F2200/451 , H03F2203/21106 , H03F2203/21139 , H03F2203/21142 , H03F2203/45481
摘要： A Doherty amplifier is disclosed, being adapted to receive an RF input signal and to output an RF output signal and comprising a main amplifier and a peak amplifier, each comprising: a first amplifier (T1, T1′) and a second amplifier (T2, T2′), each amplifier having a respective input terminal and a respective output terminal, the first amplifier and the second amplifier being adapted to amplify a respective input signal derived from the RF input signal and received at the respective input terminal and to deliver a first output signal and a second output signal, respectively; a first phase shifter (14, 14′) and a second phase shifter (15, 15′) coupled to the output terminal of the first amplifier and to the output terminal of the second amplifier, respectively; a third phase shifter (16, 16′); and a fourth phase shifter (17, 17′); wherein the Doherty amplifier further comprises a first combining node (A) and a second combining node (B) and, wherein each third phase shifter is coupled between the respective first phase shifter and the first combining node; each fourth phase shifter is coupled between the respective second phase shifter and the second combining node, and the third phase shifter of each of the main amplifier and the peak amplifier is adapted to be electrically coupled to the respective fourth phase shifter the output RF signal being obtained from a signal obtained in the first combining node and a signal obtained in the second combining node. An associated PCB is also disclosed.
摘要翻译：公开了一种Doherty放大器，其适于接收RF输入信号并输出RF输出信号并且包括主放大器和峰值放大器，每个包括：第一放大器（T1，T1'）和第二放大器（T2， T2'），每个放大器具有相应的输入端和相应的输出端，所述第一放大器和第二放大器适于放大从RF输入信号导出并在相应输入端接收的相应输入信号，并且传送第一输出信号和第二输出信号; 分别耦合到第一放大器的输出端和第二放大器的输出端的第一移相器（14,14'）和第二移相器（15,15'）; 第三移相器（16,16'）; 和第四移相器（17,17'）; 其中所述Doherty放大器还包括第一组合节点（A）和第二组合节点（B），并且其中每个第三移相器耦合在相应的第一移相器和所述第一组合节点之间; 每个第四移相器耦合在相应的第二移相器和第二组合节点之间，并且主放大器和峰值放大器中的每一个的第三移相器适于电耦合到相应的第四移相器，输出RF信号为从在第一组合节点中获得的信号获得的信号和在第二组合节点中获得的信号。还公开了一种相关的PCB。

74. 发明授权

US09324674B2 Die substrate assembly and method 有权
标题翻译：模具基板组装及方法
公开(公告)号：US09324674B2
公开(公告)日：2016-04-26
申请号：US14562129
申请日：2014-12-05
申请人： NXP B.V.
发明人： Johannes Wilhelmus van Rijckevorsel , Emiel de Bruin
IPC分类号： H01L23/482 , H01L23/00 , H01L23/66
CPC分类号： H01L24/29 , H01L23/4827 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/32 , H01L24/83 , H01L2223/6644 , H01L2224/03825 , H01L2224/03826 , H01L2224/05026 , H01L2224/0508 , H01L2224/05082 , H01L2224/05083 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05644 , H01L2224/2745 , H01L2224/2746 , H01L2224/27464 , H01L2224/29084 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/32502 , H01L2224/83203 , H01L2224/83207 , H01L2224/83444 , H01L2224/83805 , H01L2924/01028 , H01L2924/01047 , H01L2924/01079 , H01L2924/014 , H01L2924/1421 , H01L2924/15747 , H01L2924/00014 , H01L2924/0105 , H01L2924/01014
摘要： A die comprising a body of semiconductor material, said body configured to receive a solder layer of gold containing alloy for use in die bonding said die to a substrate, wherein the die includes an interface layer on a surface of the body for receiving the solder layer, the interface layer having a plurality of sub-layers of different metals.
摘要翻译：一种包括半导体材料体的芯片，所述主体被配置为接收用于将所述裸片接合到基板的用于将所述裸片接合的含金合金的焊料层，其中所述管芯包括在所述主体的表面上用于接纳焊料层的界面层，界面层具有多个不同金属的子层。

75. 发明授权

US11823986B2 Molded RF power package 有权
公开(公告)号：US11823986B2
公开(公告)日：2023-11-21
申请号：US17478049
申请日：2021-09-17
申请人： Ampleon Netherlands B.V.
发明人： Leonardus Theodorus Maria Raben
IPC分类号： H01L23/495 , H01L21/48 , H01L21/56 , H01L23/498 , H01L23/31 , H01L23/00
CPC分类号： H01L23/49555 , H01L21/4842 , H01L21/565 , H01L23/49861 , H01L23/3121 , H01L23/49568 , H01L24/48 , H01L2224/48245
摘要： The present disclosure relates to a molded radiofrequency, ‘RF’, power package. The present disclosure further relates to a method for manufacturing such package.
According to example embodiments, weakening structures are provided in the leads to allow the leads to be bent without causing delamination in the body of solidified molding compound.

76. 发明申请

US20220246553A1 Amplifier Having Improved Stability 有权
公开(公告)号：US20220246553A1
公开(公告)日：2022-08-04
申请号：US17620462
申请日：2020-06-19
申请人： Ampleon Netherlands B.V.
发明人： Yi Zhu , Josephus Henricus Bartholomeus Van Der Zanden , Rob Mathijs Heeres
IPC分类号： H01L23/66 , H03F3/193 , H03F1/56 , H01L25/16
摘要： Example embodiments relate to amplifiers haying improved stability. One example amplifier includes a conductive substrate, an input terminal arranged spaced apart from the conduct substrate, a first bondwire attachment structure electrically connected to or integrally formed with the input terminal, a first input matching capacitor having a non-grounded terminal and a grounded terminal, a second bondwire attachment structure electrically connected to the non-grounded terminal of the first input matching capacitor, a first semiconductor die on which a radiofrequency power transistor is arranged that has an output electrically connected to a fourth bondwire attachment structure, an output matching capacitor having a non-grounded terminal and a grounded terminal (the non-grounded terminal being electrically connected to a fifth bondwire attachment structure), an output terminal arranged spaced apart from the conductive substrate, a sixth bondwire attachment structure electrically connected to or integrally formed with the output terminal, and multiple bondwire assemblies.

77. 发明申请

US20220200550A1 Power Amplifier Device and Semiconductor Die 有权
公开(公告)号：US20220200550A1
公开(公告)日：2022-06-23
申请号：US17554741
申请日：2021-12-17
申请人： Ampleon Netherlands B.V.
发明人： Josephus Henricus Bartholomeus Van Der Zanden
IPC分类号： H03F3/213 , H01L23/495 , H01L23/66
摘要： Example embodiments relate to power amplifier devices and semiconductor dies. One example power amplifier device includes a semiconductor die having a first input terminal and a first output terminal. The power amplifier device also includes a power transistor integrated on the semiconductor die and including a second input terminal and a second output terminal arranged at an input side and output side of the power transistor, respectively. The power transistor has an output capacitance. Further, the power amplifier device includes a shunt network that includes a plurality of first bondwires arranged in series with a first capacitor. The first capacitor is arranged near the input side of the power transistor. At one end of the shunt network one end of the plurality of first bondwires is coupled to the second output terminal. Additionally, the power amplifier includes a pair of coupled lines formed on the semiconductor die.

78. 发明申请

US20220014159A1 Push-pull Class E Amplifier 有权
公开(公告)号：US20220014159A1
公开(公告)日：2022-01-13
申请号：US17369572
申请日：2021-07-07
申请人： Ampleon Netherlands B.V.
发明人： Yevhen Tymofieiev
IPC分类号： H03F3/217 , H03F3/26
摘要： Example embodiments relate to push-pull class E amplifiers. One example push-pull class E amplifier includes an input configured for receiving a signal to be amplified. The push-pull class E amplifier also includes an output configured for outputting the signal after amplification. Additionally, the push-pull class E amplifier includes a printed circuit board having a first dielectric layer and a second dielectric layer. Further, the push-pull class E amplifier includes a first amplifying unit and a second amplifying unit. Yet further, the push-pull class E amplifier includes a balun, a capacitive unit, a first line segment, a second line segment, a third line segment, and a fourth line segment. The first line segment and the second line segment are arranged on the first dielectric layer. A combined length of the third line segment and the fourth line segment corresponds to a quarter wavelength of an operational frequency of the amplifier.

79. 发明申请

US20210384092A1 Molded Air-cavity Package and Device Comprising the Same 有权
公开(公告)号：US20210384092A1
公开(公告)日：2021-12-09
申请号：US17339300
申请日：2021-06-04
申请人： Ampleon Netherlands B.V.
发明人： Leonardus Theodorus Maria Raben , Franciscus Gerardus Maria Meeuwsen , Jan Joseph Briones Miranda
IPC分类号： H01L23/057 , H01L23/08 , H01L23/00
摘要： The present invention relates to a molded air-cavity package. In addition, the present invention is related to a device comprising the same. The present invention is particularly related to molded air-cavity packages for radio-frequency ‘RF’ applications including but not limited to RF power amplifiers.
Instead of using hard-stop features that are arranged around the entire perimeter of the package in a continuous manner, the present invention proposes to use spaced apart pillars formed by first and second cover supporting elements. By using only a limited amount of pillars, e.g. three or four, the position of the cover relative to the body can be defined in a more predictable manner. This particularly holds if the pillars are arranged in the outer corners of the package.

80. 发明申请

US20210282237A1 WIRELESS SYNCHRONIZATION FOR MULTI-CHANNEL RF HEATING AND DRYING DEVICES 有权
公开(公告)号：US20210282237A1
公开(公告)日：2021-09-09
申请号：US17189703
申请日：2021-03-02
申请人： Ampleon Netherlands B.V.
发明人： Yevhen Tymofieiev
IPC分类号： H05B6/72 , H01Q1/02 , H05B6/68 , H03F3/24
摘要： Example embodiments relate to wireless synchronization for multi-channel RF heating and drying devices. One embodiment includes a multi-channel RE device. The RF device includes a cavity. The RE device also includes a first channel configured to generate a first RF signal and to transmit the first RE signal into the cavity. In addition, the RF device includes a second channel spaced apart and electrically isolated from the first channel. The second channel is configured to wirelessly receive the first RF signal transmitted by the first channel. The second channel is also configured to extract a frequency of the first RE signal from the received first RE signal. In addition, the second channel is configured to generate, based on the extracted frequency, a second RF signal. Further, the second channel is configured to transmit the second RF signal into the cavity.

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