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71. 发明授权

US08247905B2 Formation of vertical devices by electroplating 有权
标题翻译：通过电镀形成垂直装置
公开(公告)号：US08247905B2
公开(公告)日：2012-08-21
申请号：US12538782
申请日：2009-08-10
申请人： Hariklia Deligianni , Qiang Huang , John P. Hummel , Lubomyr T. Romankiw , Mary B. Rothwell
发明人： Hariklia Deligianni , Qiang Huang , John P. Hummel , Lubomyr T. Romankiw , Mary B. Rothwell
IPC分类号： H01L29/40
CPC分类号： H01L21/76879 , H01L21/2885 , Y10S205/925
摘要： The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.
摘要翻译：本发明涉及通过电镀形成垂直导电结构的方法。具体地，首先形成模板结构，其包括衬底，位于衬底表面上的离散金属接触焊盘，分立金属接触焊盘和衬底两者之间的级间电介质（ILD）层，以及金属通孔结构延伸穿过ILD层到分立的金属接触垫上。接下来，在模板结构中形成垂直通孔，其延伸穿过ILD层到分立的金属接触垫上。然后通过电镀在垂直通孔中形成垂直导电结构，电镀通过通过金属通孔结构将电镀电流施加到离散的金属接触焊盘来进行。优选地，模板结构包括多个分立的金属接触焊盘，多个金属通孔结构以及用于形成多个垂直导电结构的多个垂直通孔。

72. 发明授权

US08115191B2 Self-constrained anisotropic germanium nanostructure from electroplating 有权
标题翻译：电镀自限制各向异性锗纳米结构
公开(公告)号：US08115191B2
公开(公告)日：2012-02-14
申请号：US12541559
申请日：2009-08-14
申请人： Guy Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Guy Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： H01L21/302
CPC分类号： C25D3/54 , B82Y10/00 , C25D5/022 , C25D7/123 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/02628 , H01L21/02639 , Y10S977/762
摘要： A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.
摘要翻译：提供包括锗的纳米结构，其包括直径小于1微米的导线和宽度小于1微米的与基底接触并从基底向外延伸的纳米结构以及制备方法。

73. 发明申请

US20110108115A1 Forming a Photovoltaic Device 审中-公开
标题翻译：形成光伏器件
公开(公告)号：US20110108115A1
公开(公告)日：2011-05-12
申请号：US12616745
申请日：2009-11-11
申请人： Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyanathan
发明人： Hariklia Deligianni , Lubomyr T. Romankiw , Raman Vaidyanathan
IPC分类号： H01L31/0296 , H01L31/18
CPC分类号： H01L31/0322 , C25D3/56 , H01L31/18 , Y02E10/541
摘要： Methods for forming photovoltaic devices, methods for forming semiconductor compounds, photovoltaic device and chemical solutions are presented. For example, a method for forming a photovoltaic device comprising a semiconductor layer includes forming the semiconductor layer by electrodeposition from an electrolyte solution. The electrolyte solution includes copper, indium, gallium, selenous acid (H2SeO3) and water.
摘要翻译：提出了形成光伏器件的方法，形成半导体化合物的方法，光伏器件和化学溶液。例如，形成包含半导体层的光电器件的方法包括通过电解液的电沉积来形成半导体层。电解质溶液包括铜，铟，镓，硒酸（H 2 SeO 3）和水。

74. 发明申请

US20090302353A1 STRUCTURES CONTAINING ELECTRODEPOSITED GERMANIUM AND METHODS FOR THEIR FABRICATION 有权
标题翻译：含有电沉积锗的结构及其制备方法
公开(公告)号：US20090302353A1
公开(公告)日：2009-12-10
申请号：US12541499
申请日：2009-08-14
申请人： Stephen W. Bedell , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw , Devendra K. Sadana , Katherine L. Saenger
发明人： Stephen W. Bedell , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L29/165 , H01L29/16 , H01L29/78 , H01L27/092 , H01L29/12
CPC分类号： H01L21/823807 , H01L21/0237 , H01L21/02532 , H01L21/02628 , H01L21/02636 , H01L21/02639 , H01L21/28255 , H01L29/1054 , H01L29/78
摘要： Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film, and may be crystallized by solid phase epitaxy to the orientation of the underlying semiconductor substrate by subsequent annealing. These plated germanium layers may be used as the channel regions of high-mobility channel field effect transistors (FETs) in complementary metal oxide semiconductor (CMOS) circuits.
摘要翻译：提供了在诸如Si，Ge，SiGe和GaAs的各种半导体衬底上电沉积锗的方法。电沉积锗可以形成为覆盖或图案化的膜，并且可以通过后续退火使固相外延结晶到下面的半导体衬底的取向。这些电镀锗层可以用作互补金属氧化物半导体（CMOS）电路中的高迁移率沟道场效应晶体管（FET）的沟道区。

75. 发明申请

US20090179279A1 METAL GATE ELECTRODE STABILIZATION BY ALLOYING 有权
标题翻译：金属门电极通过合金稳定
公开(公告)号：US20090179279A1
公开(公告)日：2009-07-16
申请号：US12014511
申请日：2008-01-15
申请人： Veeraraghavan S. Basker , Hariklia Deligianni , Rajarao Jammy , Vamsi K. Paruchuri , Lubomyr T. Romankiw
发明人： Veeraraghavan S. Basker , Hariklia Deligianni , Rajarao Jammy , Vamsi K. Paruchuri , Lubomyr T. Romankiw
IPC分类号： H01L21/283 , H01L29/43 , C25D3/00
CPC分类号： C25D3/567 , C25D5/02 , C25D7/12 , H01L21/28079 , H01L21/28088 , H01L21/28176 , H01L29/495 , H01L29/4966 , H01L29/517
摘要： Stabilized metal gate electrode for complementary metal-oxide-semiconductor (“CMOS”) applications and methods of making the stabilized metal gate electrodes are disclosed. Specifically, the metal gate electrodes are stabilized by alloying wherein the alloy comprises a metal selected from the group consisting of Re, Ru, Pt, Rh, Ni, Al and combinations thereof and an element selected from the group consisting of W, V, Ti, Ta and combinations thereof.
摘要翻译：公开了用于互补金属氧化物半导体（“CMOS”）应用的稳定金属栅极电极和制造稳定的金属栅电极的方法。具体地说，金属栅电极通过合金化来稳定化，其中合金包括选自Re，Ru，Pt，Rh，Ni，Al及其组合的金属和选自W，V，Ti ，Ta及其组合。

76. 发明授权

US07539051B2 Memory storage devices comprising different ferromagnetic material layers, and methods of making and using the same 有权
标题翻译：包含不同铁磁材料层的存储器存储装置及其制造和使用方法
公开(公告)号：US07539051B2
公开(公告)日：2009-05-26
申请号：US11620445
申请日：2007-01-05
申请人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： G11C11/15
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1675 , Y10S977/933
摘要： A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1), and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1
摘要翻译：提供了包含交替的第一和第二铁磁材料层的存储器存储装置。每个第一铁磁材料层具有第一层厚度（L1）和第一临界电流密度（JC1），并且每个第二铁磁材料层具有第二层厚度（L2）和第二临界电流密度（JC2），条件是JC1

77. 发明申请

US20080191317A1 SELF-ALIGNED EPITAXIAL GROWTH OF SEMICONDUCTOR NANOWIRES 审中-公开
标题翻译：自对准的半导体纳米粒子的外延生长
公开(公告)号：US20080191317A1
公开(公告)日：2008-08-14
申请号：US11674453
申请日：2007-02-13
申请人： Guy Moshe Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Guy Moshe Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , C30B11/12 , C30B29/60 , H01L21/0237 , H01L21/02381 , H01L21/02521 , H01L21/02603 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L21/28525 , H01L29/0673 , H01L29/0676 , H01L2221/1094
摘要： Disclosed herein is a method of forming a nanostructure having nanowires by forming a mask with at least one opening on a surface of a substrate, to expose a portion of the surface of the substrate; depositing particles of a metal capable of catalyzing semiconductor nanowire growth on the exposed surface of the substrate by electroplating or electroless plating; and growing nanowires on the plated substrate with a precursor gas by a vapor-liquid-solid (VLS) process. Also disclosed is a nanostructure including nanowires prepared by the above method.
摘要翻译：本文公开了一种通过在衬底的表面上形成具有至少一个开口的掩模来形成具有纳米线的纳米结构的方法，以暴露衬底表面的一部分; 通过电镀或化学电镀将能够催化半导体纳米线生长的金属的颗粒沉积在基板的暴露表面上; 并通过气 - 液 - 固（VLS）工艺在具有前体气体的电镀衬底上生长纳米线。还公开了包括通过上述方法制备的纳米线的纳米结构。

78. 发明申请

US20080165576A1 MEMORY STORAGE DEVICES COMPRISING DIFFERENT FERROMAGNETIC MATERIAL LAYERS, AND METHODS OF MAKING AND USING THE SAME 有权
标题翻译：包含不同纤维素材料层的记忆存储装置及其制造和使用方法
公开(公告)号：US20080165576A1
公开(公告)日：2008-07-10
申请号：US11620445
申请日：2007-01-05
申请人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： G11C11/15 , H01L21/00 , G11B5/66
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1675 , Y10S977/933
摘要： A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1), and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1
摘要翻译：提供了包含交替的第一和第二铁磁材料层的存储器存储装置。每个第一铁磁材料层具有第一层厚度（L L1> 1）和第一临界电流密度（J C 1 H 1），并且每个第二铁磁材料层具有第二层厚度（L 2 2）和第二临界电流密度（JC 2 N 2），条件是JC 1 < L 1大于约300nm，L 2 2范围为约20nm至约200nm。该装置还包括由畴壁分开的相反方向的交替磁畴。在施加驱动电流时，磁畴和畴壁可在第一和第二铁磁材料层上移动。相应地，数据可以作为磁畴和畴壁的位置存储在存储器存储装置中。

79. 发明授权

US5800175A Method and apparatus for re-implanting teeth 失效
标题翻译：重新植入牙齿的方法和装置
公开(公告)号：US5800175A
公开(公告)日：1998-09-01
申请号：US615849
申请日：1996-03-12
申请人： Zenon Zuk , Lubomyr T. Romankiw , Roger Stambaugh
发明人： Zenon Zuk , Lubomyr T. Romankiw , Roger Stambaugh
IPC分类号： A61C5/00 , A61C8/00 , C23C14/02 , C23C14/04 , C23C14/18 , C23C14/30
CPC分类号： A61C8/0036 , A61C5/00 , C23C14/02 , C23C14/042 , C23C14/18 , C23C14/30
摘要： A method and apparatus for extraction and re-implantation of a natural tooth, such tooth being cleaned and repaired while extracted. The crown of the repaired tooth is mechanically masked and the tooth is then mounted in a partitioned vacuum cavity wherein gradual application of vacuum is used to degas and dehydrate the tooth root. Following degassing and dehydration of the tooth root a mass of titanium is heated in the cavity partition, by way of an electron beam source, the energy output of the beam source being thereafter ramped up to vaporize the mass. The partition in the cavity is then opened to expose the root to the titanium vapor after which the tooth may be reinserted into the original void.
摘要翻译：用于提取和重新植入天然牙齿的方法和装置，所述牙齿在被提取时被清洁和修复。修复的牙齿的冠部被机械地掩蔽，然后将牙齿安装在分隔的真空腔中，其中逐渐施加真空以使齿根脱气和脱水。在牙根脱气和脱水之后，通过电子束源在空腔分隔件中加热一块钛，然后将光束源的能量输出向上升高以蒸发质量。然后将空腔中的隔板打开以将根部暴露于钛蒸汽，之后将牙齿重新插入原始空隙。

80. 发明授权

US5352350A Method for controlling chemical species concentration 失效
标题翻译：控制化学物质浓度的方法
公开(公告)号：US5352350A
公开(公告)日：1994-10-04
申请号：US837468
申请日：1992-02-14
申请人： Panayotis C. Andricacos , John O. Dukovic , Lubomyr T. Romankiw
发明人： Panayotis C. Andricacos , John O. Dukovic , Lubomyr T. Romankiw
IPC分类号： C23C18/16 , C23F1/00 , C25D21/14 , G03F7/30 , G05D11/13 , G05D21/02 , C25D21/18 , C25D21/20
CPC分类号： G03F7/3071 , C23C18/1617 , C23F1/00 , C25D21/14 , G05D11/139 , G05D21/02 , B01J2208/00628
摘要： A method is described for maintaining constant chemical composition in solutions used for wet chemical processing. All chemical species that are deliberately included in the bath are kept at constant concentration primarily by a method of compensating for their depletion or generation with a set of feed solutions that are formulated and dosed into the bath in accordance with an overall material balance. Further, all chemical species not deliberately included in the bath are kept at constant concentration primarily by keeping the aggregate volume of replenishing stocks in strict proportion to the process service performed by the bath (e.g. the charge passed in an electroplating cell). Finally, a time-based scheme completes the control of the concentration of all bath species by controlling any species (whether deliberately included in the bath or not) that is depleted or generated as the result of chemical reactions which occur independently and/or spontaneously with time. Maintaining all bath chemical species at constant concentration prevents bath aging and permits production of more uniform work pieces from the bath.
摘要翻译：描述了一种用于在用于湿化学处理的溶液中保持恒定化学成分的方法。有意包含在浴中的所有化学物质主要通过补偿其消耗或产生的方法保持恒定浓度，所述方法通过根据整体物料平衡配制并投入浴中的一组进料溶液。此外，不是故意包括在浴中的所有化学物质都保持恒定浓度，主要是通过保持补充料的总体积与由浴进行的处理服务（例如在电镀槽中通过的电荷）严格成比例。最后，基于时间的方案通过控制任何物种（无论是故意包括在浴中）是否完全控制所有沐浴物种的浓度，由于化学反应的结果而耗尽或产生，这些化学反应独立地和/或自发地发生，时间。保持恒定浓度的所有浴化学物质可以防止沐浴老化，并允许从浴中生产更均匀的工件。

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