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71. 发明申请

US20090207724A1 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US20090207724A1
公开(公告)日：2009-08-20
申请号：US12320955
申请日：2009-02-10
申请人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
发明人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
IPC分类号： G11B3/70
CPC分类号： G11B25/04 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.
摘要翻译：磁存储器设置有存储单元。存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层和磁记录层。互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。接地线相对于互连设置在与磁记录元件相对的一侧上。

72. 发明申请

US20090098412A1 Magnetic recording element, manufacturing method of the same and magnetic storage system using the same 有权
标题翻译：磁记录元件，其制造方法和使用其的磁存储系统
公开(公告)号：US20090098412A1
公开(公告)日：2009-04-16
申请号：US12285429
申请日：2008-10-03
申请人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
发明人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11B5/33
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer. The sectional area taken parallel to the surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer.
摘要翻译：磁记录元件包括具有表面和一对电极的多层。多层具有第一磁性固定层，其磁化基本上在基本垂直于表面的第一方向固定。多层还具有第二磁性固定层，其磁化基本上固定在与基本上垂直于表面的第一方向相反的第二方向上。第三磁性层设置在第一和第二磁性层之间。第三铁磁层的磁化方向是可变的。第一中间层设置在第一和第三磁性层之间。第二中间层设置在第二和第三磁性层之间。该对电极能够将与表面大致垂直的方向流动的电流供给到多层。在第一磁性层的厚度中点平行于表面截取的截面积大于第二磁性层的截面面积。

73. 发明申请

US20080213627A1 Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus 有权
标题翻译：磁阻效应器件及其制造方法，磁存储器，磁头和磁记录装置
公开(公告)号：US20080213627A1
公开(公告)日：2008-09-04
申请号：US12073171
申请日：2008-02-29
申请人： Yuichi Ohsawa , Shiho Nakamura
发明人： Yuichi Ohsawa , Shiho Nakamura
IPC分类号： G11B5/39 , B32B7/04 , B32B15/04
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11C11/16 , H01L27/224 , H01L27/226 , H01L43/08 , Y10T428/1121 , Y10T428/12271
摘要： A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on a side face of the insulator layer. The connecting section is not interposed between the second ferromagnetic layer and the magnetic bias layer. The connecting section is made of a ferromagnetic material, and electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer. A method for manufacturing a magnetoresistance effect device includes: laminating a first and second ferromagnetic layer to sandwich an insulator layer, and laminating a magnetic bias layer with the second ferromagnetic layer; and forming a connecting section for electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer by discontinuously forming a ferromagnetic material on a side face of the insulator layer.
摘要翻译：磁阻效应器件包括：绝缘体层; 层叠以夹持绝缘体层的第一和第二铁磁层; 层叠有所述第二铁磁层的磁偏置层; 以及在绝缘体层的侧面上不连续地形成的连接部。连接部不夹在第二铁磁层和磁偏置层之间。连接部分由铁磁材料制成，并且在第一铁磁层和第二铁磁层之间电连接。一种制造磁阻效应器件的方法包括：层叠第一和第二铁磁层以夹住绝缘体层，并将磁偏置层与第二铁磁层层叠; 以及形成用于通过在绝缘体层的侧面上不连续地形成铁磁材料来在第一铁磁层和第二铁磁层之间电连接的连接部分。

74. 发明申请

US20060187705A1 MAGNETIC CELL AND MAGNETIC MEMORY 有权
标题翻译：磁性细胞和磁性记忆
公开(公告)号：US20060187705A1
公开(公告)日：2006-08-24
申请号：US11405418
申请日：2006-04-18
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell includes a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性单元包括第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

75. 发明申请

US20060007730A1 Magnetic cell and magnetic memory 有权
公开(公告)号：US20060007730A1
公开(公告)日：2006-01-12
申请号：US11227493
申请日：2005-09-16
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

76. 发明授权

US06956766B2 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US06956766B2
公开(公告)日：2005-10-18
申请号：US10721549
申请日：2003-11-26
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性电池包括：第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

77. 发明申请

US20050069732A1 Magnetic recording medium and method for manufacturing the same 有权
标题翻译：磁记录介质及其制造方法
公开(公告)号：US20050069732A1
公开(公告)日：2005-03-31
申请号：US10947132
申请日：2004-09-23
申请人： Yoshiyuki Kamata , Yuichi Ohsawa , Hiroyuki Hieda , Akira Kikitsu
发明人： Yoshiyuki Kamata , Yuichi Ohsawa , Hiroyuki Hieda , Akira Kikitsu
IPC分类号： G11B5/72 , G11B5/00 , G11B5/65 , G11B5/667 , G11B5/74 , G11B5/855 , B32B5/16
CPC分类号： B82Y10/00 , G11B5/74 , G11B5/743 , G11B5/855 , G11B2005/001 , Y10T428/256 , Y10T428/265
摘要： A magnetic recording medium which allows high density recording and has excellent durability can be obtained. A magnetic recording medium includes: a plurality of ferromagnetic material dots arranged on a soft magnetic layer formed on a non-magnetic substrate so as to be separated from one another; and carbon films which are formed on the respective ferromagnetic material dots, each carbon film having a smooth film face shape in a section passing through the center of each ferromagnetic material dot and a film thickness gradually decreasing from the center of the ferromagnetic material dot toward an outer edge thereof.
摘要翻译：可以获得允许高密度记录并具有优异的耐久性的磁记录介质。磁记录介质包括：多个铁磁材料点，其布置在形成在非磁性基板上以便彼此分离的软磁层上; 和形成在各个铁磁材料点上的碳膜，每个碳膜在穿过每个铁磁材料点的中心的部分中具有平滑的薄膜表面形状，并且薄膜厚度从铁磁材料点的中心逐渐减小到的外边缘。

78. 发明授权

US09082961B2 Method of manufacturing multilayer film 有权
标题翻译：多层膜的制造方法
公开(公告)号：US09082961B2
公开(公告)日：2015-07-14
申请号：US13226960
申请日：2011-09-07
申请人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号： H01L43/12 , H01L29/82
CPC分类号： H01L43/12 , H01L29/82
摘要： According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.
摘要翻译：根据一个实施例，一种制造多层膜的方法，该方法包括：形成第一层，在第一层上形成第二层，以及将第一层和第二层之一的晶体信息转录到第一层中的另一层并且通过对第二层执行GCIB照射来产生第二层。

79. 发明授权

US08716817B2 Magnetic memory element and nonvolatile memory device 有权
标题翻译：磁存储元件和非易失性存储器件
公开(公告)号：US08716817B2
公开(公告)日：2014-05-06
申请号：US13416724
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
发明人： Daisuke Saida , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01F10/3286 , G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3236 , H01F10/329 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
摘要翻译：根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。第二和第三铁磁层的磁化是可变的。第一和第四铁磁层的磁化在垂直于层表面的方向固定。当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。

80. 发明授权

US08710605B2 Magnetic memory and method of manufacturing the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US08710605B2
公开(公告)日：2014-04-29
申请号：US13231894
申请日：2011-09-13
申请人： Shigeki Takahashi , Yuichi Ohsawa , Junichi Ito , Chikayoshi Kamata , Saori Kashiwada , Minoru Amano , Hiroaki Yoda
发明人： Shigeki Takahashi , Yuichi Ohsawa , Junichi Ito , Chikayoshi Kamata , Saori Kashiwada , Minoru Amano , Hiroaki Yoda
IPC分类号： H01L29/72
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.
摘要翻译：根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

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