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71. 发明授权

US09401525B2 Power storage device and manufacturing method thereof 有权
标题翻译：蓄电装置及其制造方法
公开(公告)号：US09401525B2
公开(公告)日：2016-07-26
申请号：US12723961
申请日：2010-03-15
申请人： Konami Izumi
发明人： Konami Izumi
IPC分类号： H01M10/04 , H01G9/008 , H01G9/00 , H01G11/28 , H01G11/56 , H01G11/68 , H01G11/80 , H01G11/84 , H01M4/66 , H01M10/0525
CPC分类号： H01M10/0585 , C23C14/0676 , C23C14/10 , C23C14/14 , C23C14/34 , C23C14/58 , H01G9/016 , H01G9/155 , H01G11/28 , H01G11/56 , H01G11/68 , H01G11/80 , H01G11/84 , H01G11/86 , H01M4/661 , H01M10/0436 , H01M10/0525 , H01M10/0562 , Y02E60/13 , Y10T29/49115
摘要： A power storage device having a small thickness is manufactured. A manufacturing method of the power storage device includes: forming a first layer and a second layer over a first substrate; forming a first insulating layer, a positive electrode and a negative electrode over the second layer; forming a solid electrolyte layer over the first insulating layer, the positive electrode, and the negative electrode; forming a sealing layer to cover the solid electrolyte layer; forming a planarization film and a support over the sealing layer; separating the first layer and the second layer from each other so that the second layer, the positive electrode, the negative electrode, the solid electrolyte layer, the sealing layer, the planarization film, and the support are separated from the first substrate; attaching the separated structure to a second substrate which is flexible; and separating the support from the planarization film.
摘要翻译：制造厚度小的蓄电装置。蓄电装置的制造方法包括：在第一基板上形成第一层和第二层; 在第二层上形成第一绝缘层，正极和负极; 在所述第一绝缘层，所述正极和所述负极上形成固体电解质层; 形成覆盖固体电解质层的密封层; 在所述密封层上形成平坦化膜和支撑体; 将第一层和第二层彼此分离，使得第二层，正极，负极，固体电解质层，密封层，平坦化膜和载体与第一基板分离; 将分离的结构附接到柔性的第二基底; 并将载体与平坦化膜分离。

72. 发明授权

US08558555B2 Test method of microstructure body and micromachine 有权
标题翻译：微结构体和微机械的试验方法
公开(公告)号：US08558555B2
公开(公告)日：2013-10-15
申请号：US12888617
申请日：2010-09-23
申请人： Mayumi Yamaguchi , Konami Izumi , Fuminori Tateishi
发明人： Mayumi Yamaguchi , Konami Izumi , Fuminori Tateishi
IPC分类号： G01R27/32 , G01R31/26
CPC分类号： B81C99/004 , G01R31/3025
摘要： It is an object to provide a test method of a process, an electric characteristic, and a mechanical characteristic of a structure body in a micromachine without contact. A structure body including a first conductive layer, a second conductive layer provided in parallel to the first conductive layer, and a sacrifice layer or a space provided between the first conductive layer and the second conductive layer is provided; an antenna connected to the structure body is provided; electric power is supplied to the structure body wirelessly through the antenna; and an electromagnetic wave generated from the antenna is detected as a characteristic of the structure body.
摘要翻译：本发明的目的是提供一种微机械结构体的过程，电特性和机械特性的测试方法。提供一种结构体，包括第一导电层，与第一导电层平行设置的第二导电层，以及设置在第一导电层和第二导电层之间的牺牲层或空间。提供连接到结构体的天线; 电力通过天线无线地提供给结构体; 并且从天线产生的电磁波被检测为结构体的特征。

73. 发明授权

US08470629B2 Method for manufacturing micromachine 有权
标题翻译：微机械制造方法
公开(公告)号：US08470629B2
公开(公告)日：2013-06-25
申请号：US13189734
申请日：2011-07-25
申请人： Mayumi Mikami , Konami Izumi
发明人： Mayumi Mikami , Konami Izumi
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01H59/0009 , B81B2201/018 , B81C1/00166 , H01H1/58 , H01H2001/0052 , H01H2001/0057 , Y10T29/49155
摘要： A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented.
摘要翻译：在形成有表面微机械加工技术的微型机械（MEMS机构）中，提供了防止配线断线和断线的结构。在牺牲层之上的布线（上辅助布线）在牺牲层上电连接到不同的布线（上连接布线），从而在生成的台阶部分上形成在牺牲层上的布线的变薄，断开等由于可以防止牺牲层的厚度。牺牲层上的布线由与作为可动电极的上驱动电极相同的导电膜形成，因此薄。然而，不同的布线形成在通过CVD法形成并具有圆形台阶的结构层上，并且具有200nm至1μm的厚度，由此可以进一步布线的变薄，断开等防止了

74. 发明授权

US08455928B2 Micro electro mechanical device and manufacturing method thereof 有权
标题翻译：微机电装置及其制造方法
公开(公告)号：US08455928B2
公开(公告)日：2013-06-04
申请号：US13248283
申请日：2011-09-29
申请人： Mayumi Yamaguchi , Konami Izumi
发明人： Mayumi Yamaguchi , Konami Izumi
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , B81B2201/034 , B81C1/00246 , B81C2203/0742
摘要： A micro structure and an electric circuit included in a micro electro mechanical device are manufactured over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes layers formed of the same insulating film as the gate insulating layer and the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.
摘要翻译：包含在微电子机械装置中的微结构和电路在相同的步骤中在相同的绝缘表面上制造。在微机电装置中，包括晶体管和微结构的电路集成在具有绝缘表面的基板上。微结构包括具有与晶体管的栅极绝缘层的层叠体和设置在栅极绝缘层上的半导体层相同的层叠结构的结构层。也就是说，结构层包括由与绝缘层相同的绝缘膜和与晶体管的半导体层相同的半导体膜形成的层。此外，通过使用用作晶体管的栅电极，源电极和漏电极的导电层作为牺牲层来制造微结构。

75. 发明授权

US08455287B2 Method for manufacturing semiconductor device including microstructure 有权
标题翻译：包括微结构的半导体器件的制造方法
公开(公告)号：US08455287B2
公开(公告)日：2013-06-04
申请号：US13219784
申请日：2011-08-29
申请人： Konami Izumi , Mayumi Yamaguchi
发明人： Konami Izumi , Mayumi Yamaguchi
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81C2203/0735 , H01L21/0237 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L21/02691 , H01L27/1266 , H01L27/1277
摘要： A method for manufacturing a semiconductor device is provided, which includes the step of forming a microstructure comprising a layer containing silicon over a first substrate, the step of forming an interlayer insulating layer over the microstructure, the step of forming a connection conductive layer over the interlayer insulating layer, and the step of separating the microstructure from the first substrate.
摘要翻译：提供了一种制造半导体器件的方法，其包括在第一衬底上形成包含硅层的微结构的步骤，在微结构上形成层间绝缘层的步骤，在所述微结构上形成连接导电层的步骤层间绝缘层，以及从第一基板分离微结构的步骤。

76. 发明申请

US20120200312A1 Element Substrate, Inspecting Method, and Manufacturing Method of Semiconductor Device 审中-公开
标题翻译：元件基板，检测方法和半导体器件的制造方法
公开(公告)号：US20120200312A1
公开(公告)日：2012-08-09
申请号：US13446614
申请日：2012-04-13
申请人： Kiyoshi Kato , Konami Izumi , Masahiko Hayakawa , Koichiro Kamata
发明人： Kiyoshi Kato , Konami Izumi , Masahiko Hayakawa , Koichiro Kamata
IPC分类号： G01R31/26
CPC分类号： G01R31/2822 , G01R31/2886 , G01R31/3025 , H01L27/13
摘要： A substrate including a semiconductor layer, where characteristics of an element can be evaluated with high reliability, and an evaluating method thereof are provided. A substrate including a semiconductor layer of the invention has a closed-loop circuit in which an antenna coil and a semiconductor element are connected in series, and a surface of an area over which the circuit is formed is covered with an insulating film. By using such a circuit, a contactless inspection can be carried out. Further, a ring oscillator can be substituted for the closed-loop circuit.
摘要翻译：提供了包括可以以高可靠性评估元件的特性的半导体层的基板及其评价方法。包括本发明的半导体层的衬底具有一个闭环电路，其中天线线圈和半导体元件串联连接，并且形成有电路的区域的表面被绝缘膜覆盖。通过使用这样的电路，可以进行非接触检查。此外，环形振荡器可以代替闭环电路。

77. 发明授权

US08138560B2 Microstructure, micromachine, and manufacturing method of microstructure and micromachine 有权
标题翻译：微结构，微机械，微机械和微机械的制造方法
公开(公告)号：US08138560B2
公开(公告)日：2012-03-20
申请号：US11748183
申请日：2007-05-14
申请人： Mayumi Yamaguchi , Konami Izumi
发明人： Mayumi Yamaguchi , Konami Izumi
IPC分类号： H01L21/00
CPC分类号： H01L21/762 , B32B38/10 , B81C3/008 , B81C2201/019 , Y10T428/24802
摘要： Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to be a movable electrode is separated from the substrate. A layer 106 to be a fixed electrode is formed over another substrate 105. The layer 103 to be a movable electrode is fixed to the substrate 105 with the spacer layer 103 which is partially provided interposed therebetween, so that the layer 103 to be a movable electrode and a layer 106 to be a fixed electrode face each other.
摘要翻译：没有牺牲层蚀刻，制造微结构和微机械。在基板101上形成分离层102，在分离层102的上方形成作为可动电极的层103.在分离层102的界面处，作为可动电极的层103与基板分离。作为固定电极的层106形成在另一基板105上。作为可动电极的层103被固定到基板105，间隔层103被部分地设置在其间，使得层103成为可移动的电极和作为固定电极的层106彼此面对。

78. 发明申请

US20110297940A1 MICROMACHINE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： MICROMACHINE及其制造方法
公开(公告)号：US20110297940A1
公开(公告)日：2011-12-08
申请号：US13214293
申请日：2011-08-22
申请人： Mayumi Yamaguchi , Konami Izumi
发明人： Mayumi Yamaguchi , Konami Izumi
IPC分类号： H01L29/786 , H01L21/20 , H01L21/283
CPC分类号： B81B7/008 , B81C1/00246 , B81C2203/0742 , H01L27/1222 , H01L29/78678
摘要： A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.
摘要翻译：电路的半导体元件包括在栅电极上的半导体层。半导体元件的半导体层由包含多晶硅的层形成，该多晶硅通过在基板上通过热处理或激光照射而使非晶硅结晶而获得。所获得的包含多晶硅的层也用于结构体的结构层，例如结构体的可动电极。因此，可以在一个基板上形成用于控制结构体的结构体和电路。结果，微型机器可以被小型化。此外，组装和包装是不必要的，从而可以降低制造成本。

79. 发明授权

US08058145B2 Micro-electro-mechanical device and manufacturing method for the same 有权
标题翻译：微机电装置及其制造方法相同
公开(公告)号：US08058145B2
公开(公告)日：2011-11-15
申请号：US12842061
申请日：2010-07-23
申请人： Fuminori Tateishi , Konami Izumi , Mayumi Yamaguchi
发明人： Fuminori Tateishi , Konami Izumi , Mayumi Yamaguchi
IPC分类号： H01L21/00
CPC分类号： C08F297/02 , A61J3/00 , B81C1/0023 , H01L27/1214 , H01L27/1218 , H01L27/1255 , H01L27/1262 , H01L27/1266 , Y02P20/582
摘要： It is an object of the present invention to provide a micro-electro-mechanical-device having a microstructure and a semiconductor element over one surface. In particular, it is an object of the present invention to provide a method for simplifying the process of forming the microstructure and the semiconductor element over one surface. A space in which the microstructure is moved, that is, a movable space for the microstructure is formed by processing an insulating layer which is formed in a process of forming the semiconductor element. The movable space can be formed by forming the insulating layer having a plurality of openings and making the openings face each other to be overlapped each other.
摘要翻译：本发明的目的是提供一种在一个表面上具有微结构和半导体元件的微机电装置。特别地，本发明的目的是提供一种简化在一个表面上形成微结构和半导体元件的工艺的方法。通过处理在形成半导体元件的工艺中形成的绝缘层来形成微结构移动的空间，即微结构的可移动空间。可移动空间可以通过形成具有多个开口的绝缘层并使开口彼此面对地彼此重叠而形成。

80. 发明授权

US08043950B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08043950B2
公开(公告)日：2011-10-25
申请号：US11552369
申请日：2006-10-24
申请人： Mayumi Yamaguchi , Konami Izumi
发明人： Mayumi Yamaguchi , Konami Izumi
IPC分类号： H01L21/3205 , H01L27/12 , H01L27/01 , H01L21/4763 , H01L31/0392
CPC分类号： H01L27/1203 , B81C1/00547 , B81C2201/0135 , H01L21/84 , H01L27/016 , H01L27/12 , H01L27/13
摘要： It is an object of the present invention to manufacture a micromachine having a plurality of structural bodies with different functions and to shorten the time required for sacrifice layer etching in a process of manufacturing the micromachine. Another object of the present invention is to prevent a structural layer from being attached to a substrate after the sacrifice layer etching. In other words, an object of the present invention is to provide an inexpensive and high-value-added micromachine by improving throughput and yield. The sacrifice layer etching is conducted in multiple steps. In the multiple steps of the sacrifice layer etching, a part of the sacrifice layer that does not overlap with the structural layer is removed by the earlier sacrifice layer etching and a part of the sacrifice layer that is under the structural layer is removed by the later sacrifice layer etching.
摘要翻译：本发明的目的是制造具有多个具有不同功能的结构体的微型机械，并且缩短在制造微机械过程中牺牲层蚀刻所需的时间。本发明的另一个目的是在牺牲层蚀刻之后防止结构层附着到基底上。换句话说，本发明的目的是通过提高生产量和产量来提供廉价和高附加值的微机械。牺牲层蚀刻以多个步骤进行。在牺牲层蚀刻的多个步骤中，通过较早的牺牲层蚀刻去除与结构层不重叠的牺牲层的一部分，并且在结构层之下的部分牺牲层被后面的部分去除牺牲层蚀刻。

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