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    • 75. 发明申请
    • Variable-wavelength semiconductor laser and gas sensor using same
    • 可变波长半导体激光器和使用其的气体传感器
    • US20060187976A1
    • 2006-08-24
    • US10548394
    • 2005-02-10
    • Hiroshi MoriTomoyuki KikugawaYoshio TakahashiToshiyuki SuzukiKiyoshi Kimura
    • Hiroshi MoriTomoyuki KikugawaYoshio TakahashiToshiyuki SuzukiKiyoshi Kimura
    • H01S3/10H01S5/20H01S5/00
    • H01S5/12G01J3/433G01N21/39H01S5/02415H01S5/0683H01S5/1039H01S5/227
    • A tunable wavelength semiconductor laser includes an n-type semiconductor substrate, an active layer which is disposed above the n-type semiconductor substrate and which generates light, a p-type cladding layer disposed above the active layer, and wavelength selecting section for causing to selectively oscillate only a specific wavelength from the light generated in the active layer. The tunable wavelength semiconductor layer capable of oscillating at the specific wavelength can be performed by injecting current into the active layer, and the specific wavelength can be varied by changing the magnitude of the current. A device length showing a length in a propagation direction of the light generated in the active layer is about 200 μm to 500 μm, and a width of the active layer orthogonal to the propagation direction of the light generated in the active layer, and showing a length in a direction parallel to the n-type semiconductor substrate is about 1 μm to 2 μm. The p-type cladding layer includes a lightly doped cladding layer having a low impurity concentration and a heavily doped cladding layer having a high impurity concentration which are sequentially arranged from the active layer side.
    • 可调波长半导体激光器包括n型半导体衬底,设置在n型半导体衬底上方并产生光的有源层,设置在有源层上方的p型覆层;以及波长选择部分,用于使 从有源层中产生的光中选择性地仅振荡特定波长。 能够以特定波长振荡的可调谐波长半导体层可以通过将有效层注入电流来进行,通过改变电流的大小来改变特定的波长。 表示在有源层中产生的光的传播方向上的长度的器件长度为约200μm至500μm,并且有源层的宽度与在有源层中产生的光的传播方向垂直,并且显示为 在与n型半导体基板平行的方向上的长度为1〜2μm左右。 p型包覆层包括具有低杂质浓度的轻掺杂包层和从有源层侧依次布置的具有高杂质浓度的重掺杂包层。
    • 79. 发明授权
    • Apparatus including a specimen tilt mechanism for measuring
electromagnetic field distribution in the specimen using a focused
electron beam
    • 包括用于使用聚焦电子束测量样本中的电磁场分布的样本倾斜机构的装置
    • US5572122A
    • 1996-11-05
    • US141077
    • 1993-10-26
    • Yusuke YajimaYoshio TakahashiMasakazu IchikawaShigeyuki Hosoki
    • Yusuke YajimaYoshio TakahashiMasakazu IchikawaShigeyuki Hosoki
    • G01N23/04G01R31/305G01R33/028G01R33/12G01R33/02G01R33/025
    • G01R31/305
    • An apparatus for measuring an electromagnetic field distribution using a focused electron beam can measure the electromagnetic field distribution in a specimen with high resolution and high reliability. A focused electron beam radiation system irradiates a specimen with a focused electron beam. A specimen tilt mechanism tilts a specimen by 180.degree. about a tilt axis that is perpendicular to the optical axis of the focused electron beam. An electron beam position detector measures the direction and quantity of the deflection given to the focused electron beam when it is transmitted through the specimen. Further, a processing system calculates the direction and the intensity of an electric field, and the direction and the intensity of a magnetic field separately at a point on the specimen through which the focused electron beam is transmitted, from the data on the direction and the quantity of the deflection of the focused electron beam measured by the electron beam position detector before and after the turnover of the specimen by the specimen tilt mechanism. Thus, an electric field and a magnetic field in a specimen can be separately observed independently of each other.
    • 使用聚焦电子束测量电磁场分布的装置可以以高分辨率和高可靠性测量样品中的电磁场分布。 聚焦电子束辐射系统用聚焦电子束照射样品。 样品倾斜机构围绕垂直于聚焦电子束的光轴的倾斜轴将样品倾斜180度。 电子束位置检测器测量当聚焦电子束透过样品时给予聚焦电子束的偏转的方向和数量。 此外,处理系统从方向和方向上的数据分别计算电场的方向和强度,以及分别在聚焦电子束透过的样本上的点上的磁场的方向和强度 电子束位置检测器在样品倾倒机构转换之前和之后测量的聚焦电子束的偏转量。 因此,可以彼此独立地分别观察试样中的电场和磁场。