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    • 72. 发明授权
    • Semiconductor laser device and semiconductor laser device array
    • 半导体激光器件和半导体激光器件阵列
    • US07885305B2
    • 2011-02-08
    • US11659198
    • 2005-08-04
    • Akiyoshi WatanabeHirofumi MiyajimaHirofumi Kan
    • Akiyoshi WatanabeHirofumi MiyajimaHirofumi Kan
    • H01S5/00
    • H01S5/4031H01S5/101H01S5/1014H01S5/1085H01S5/16H01S5/2231H01S2301/18
    • In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle θ, based on a total reflection critical angle θc at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.
    • 在半导体激光装置3的有源层15中,折射率型主波导4由p型覆盖层17的脊部9a形成。主波导4的侧面4g,4h形成相对角度θ ;相对于发光表面1a和光反射表面1b,基于侧表面4g和4h处的全反射临界角和c。 主波导4与发光面1a和光反射面1b分离规定距离,激光L1通过的光路部8a,8b配置在主波导管4的一端和 发光表面1a和主波导4的另一端和光反射表面1b之间。 光路部分8a和8b是增益型波导,并且发射光通过光路部分8a和8b的光从预定轴线A的方向偏离的光分量L2和L3到外部。 从而可以实现能够发出较高强度的激光并能够减少侧峰的半导体激光器件和半导体激光器件阵列。
    • 75. 发明授权
    • Passive Q switch laser device
    • 被动Q开关激光装置
    • US07664148B2
    • 2010-02-16
    • US11661327
    • 2005-09-06
    • Hiroshi SakaiHirofumi KanTakunori Taira
    • Hiroshi SakaiHirofumi KanTakunori Taira
    • H01S3/11H01S3/113
    • H01S3/113H01S3/0014H01S3/0621H01S3/0627H01S3/08036H01S3/10061
    • A laser apparatus 10 includes: a laser medium 11 arranged between a pair of reflecting means 12A and 12B of an optical resonator 12 and adapted to be excited to emit light; a saturable absorber 14 arranged on the optical axis L of the optical resonator 12 between the pair of reflecting means, the transmissivity thereof being adapted to increase with the absorption of emitted light 21 from the laser medium; and an excitation light source unit 13 adapted to output light 22 having a wavelength that excites the laser medium. The saturable absorber 14 is a crystalline body having first to third mutually perpendicular crystallographic axes and is arranged in the optical resonator 12 in such a manner as to have different transmissivities for emitted light in two mutually perpendicular polarization directions. In this case, a laser oscillation occurs for emitted light in the polarization direction that shows the greater transmissivity, and it is therefore possible to obtain laser beams having a stabilized polarization direction.
    • 激光装置10包括:激光介质11,配置在光谐振器12的一对反射装置12A和12B之间,并被激发以发光; 在所述一对反射装置之间布置在所述光学谐振器12的光轴L上的可饱和吸收体14,其透射率适于随着来自激光介质的发射光21的吸收而增加; 以及适于输出具有激发激光介质的波长的光22的激发光源单元13。 可饱和吸收体14是具有第一至第三相互垂直的结晶轴的结晶体,并且以对于两个相互垂直的偏振方向的发射光具有不同透射率的方式设置在光学谐振器12中。 在这种情况下,对于显示较大透射率的偏振方向的发光,发生激光振荡,因此可以获得具有稳定的偏振方向的激光束。
    • 78. 发明授权
    • Laser device
    • 激光设备
    • US07599414B2
    • 2009-10-06
    • US11628414
    • 2005-07-08
    • Hirofumi MiyajimaHirofumi Kan
    • Hirofumi MiyajimaHirofumi Kan
    • H01S3/04
    • H01S5/4025F28F3/12H01L23/473H01L23/4735H01L2924/0002H01S5/005H01S5/02264H01S5/024H01S5/02407H01S5/02423H01L2924/00
    • A laser apparatus (100) has a semiconductor laser device (12a to 12c), coolant jetting means (24), and a heatsink (18a to 18c). The semiconductor laser device has a light output surface (50) for emitting laser light. The coolant jetting means has a coolant chamber (53) for accommodating a coolant, an inflow port (54) communicating with the coolant chamber, and a jet port (25) opposing the light output surface of the laser device. The heatsink has a laser mount surface (36) for mounting the semiconductor laser device, and a flow path (68a to 68c) where the coolant (56) jetted from the jet port flows in. When the coolant chamber is fed with the coolant, the jet port jets the coolant onto the light output surface of the semiconductor laser device. Since the light output surface is directly cooled by a jet flow of the coolant, cooling efficiency is excellent.
    • 激光装置(100)具有半导体激光装置(12a〜12c),冷却水喷射装置(24)和散热片(18a〜18c)。 半导体激光装置具有用于发射激光的光输出表面(50)。 冷却剂喷射装置具有用于容纳冷却剂的冷却剂室(53),与冷却剂室连通的流入口(54)和与激光装置的光输出表面相对的喷射口(25)。 散热器具有用于安装半导体激光器件的激光器安装表面(36)和从喷射口喷射的冷却剂(56)流入的流路(68a至68c)。当冷却剂腔被供给冷却剂时, 喷射口将冷却剂喷射到半导体激光装置的光输出表面上。 由于光输出表面被冷却剂的喷射流直接冷却,所以冷却效率优异。
    • 79. 发明授权
    • Semiconductor laser device and semiconductor laser element array
    • 半导体激光器件和半导体激光元件阵列
    • US07577174B2
    • 2009-08-18
    • US11596249
    • 2005-06-23
    • Hirofumi MiyajimaAkiyoshi WatanabeHirofumi Kan
    • Hirofumi MiyajimaAkiyoshi WatanabeHirofumi Kan
    • H01S5/10
    • H01S5/22
    • The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof. The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.
    • 本发明涉及例如能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件。 半导体激光元件包括第一半导体部分,有源层和第二半导体部分。 第一半导体部分具有用于在有源层中形成折射率型波导区域的脊部分。 波导区域至少包括在其侧表面具有各自不同的全反射临界角的第一和第二部分。 第一和第二部分被布置成使得其侧表面相对于位于有源层的任一端处的发光表面和光反射表面的相对角度大于在该有源层的任一端处的全反射临界角 侧面。 在这种情况下,第一部分中的侧表面与发光表面和光反射表面的相对角度与第二部分中的侧表面相对于发光表面和光反射表面的相对角度不同。