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71. 发明申请

US20100238721A1 Stuck-At Defect Condition Repair for a Non-Volatile Memory Cell 有权
标题翻译：阻止非易失性存储器单元的缺陷条件修复
公开(公告)号：US20100238721A1
公开(公告)日：2010-09-23
申请号：US12405918
申请日：2009-03-17
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
IPC分类号： G11C11/00 , G11C29/00
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
摘要翻译：一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元中的卡入缺陷状况的方法和装置。在一些实施例中，电阻感测元件具有磁性隧道结（MTJ）和位于电阻感测元件附近的修复平面。修复平面在MTJ中注入磁场以修复卡住的缺陷状况。

72. 发明授权

US07961509B2 Spin-transfer torque memory self-reference read and write assist methods 有权
标题翻译：自转转矩存储器自参考读写辅助方法
公开(公告)号：US07961509B2
公开(公告)日：2011-06-14
申请号：US12903305
申请日：2010-10-13
申请人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
发明人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
摘要翻译：描述了自旋转移力矩存储装置和自参考读和写辅助方案。读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高电阻状态或低电阻状态。还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

73. 发明授权

US07876595B2 Magnetic shift register as counter and data storage device 有权
标题翻译：磁移寄存器作为计数器和数据存储设备
公开(公告)号：US07876595B2
公开(公告)日：2011-01-25
申请号：US12233760
申请日：2008-09-19
申请人： Haiwen Xi , Dimitar V. Dimitrov , Andreas Roelofs , Xiaobin Wang , Paul E Anderson , Hongyue Liu
发明人： Haiwen Xi , Dimitar V. Dimitrov , Andreas Roelofs , Xiaobin Wang , Paul E Anderson , Hongyue Liu
IPC分类号： G11C19/00
CPC分类号： G11C19/0841 , G11C11/14
摘要： A register having a track with a first electrode is at the first end to supply a current to the track in a first direction and a second electrode at the second end to supply a current to the track in a second direction, the second direction being opposite to the first direction. A first domain wall anchor and a second domain wall anchor are positioned proximate the track between the first electrode and the second electrode. Each of the domain wall anchors has a ferromagnetic pinned layer and a barrier layer proximate the track, with the barrier layer between the track and the ferromagnetic pinned layer. The ferromagnetic layer has a magnetization orientation pinned perpendicular to the magnetization orientation of the track.
摘要翻译：具有带有第一电极的轨道的寄存器处于第一端，以沿第一方向向轨道提供电流，而第二端处的第二电极在第二方向上向轨道提供电流，第二方向相反到第一个方向。第一结构域壁锚和第二结构域锚固件位于第一电极和第二电极之间的轨道附近。每个畴壁锚固件具有铁磁钉扎层和靠近轨道的阻挡层，阻挡层在轨道和铁磁性钉扎层之间。铁磁层具有垂直于轨道的磁化取向钉扎的磁化取向。

74. 发明申请

US20090316462A1 MAGNETIC TRACKS WITH DOMAIN WALL STORAGE ANCHORS 有权
标题翻译：磁性轨迹与域墙存储锚
公开(公告)号：US20090316462A1
公开(公告)日：2009-12-24
申请号：US12144705
申请日：2008-06-24
申请人： Haiwen Xi , Xiaobin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Harry Liu , Song S. Xue , Andreas Roelofs , Markus Siegert
发明人： Haiwen Xi , Xiaobin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Harry Liu , Song S. Xue , Andreas Roelofs , Markus Siegert
IPC分类号： G11C19/08
CPC分类号： G11C19/0808 , G11C11/14 , Y10S977/933
摘要： Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.
摘要翻译：磁性移位寄存器，其中通过电流移动磁畴壁来实现数据写入和读取。提供了稳定域壁的畴壁节点或锚的各种实施例。在一些实施例中，壁锚是与磁迹分离的元件。在其他实施例中，壁锚是磁轨的物理构型的扰动。在另外的其它实施例中，壁锚是磁迹材料中的干扰。

75. 发明授权

US08218356B2 Spin-torque memory with unidirectional write scheme 有权
标题翻译：具有单向写入方案的自旋力矩存储器
公开(公告)号：US08218356B2
公开(公告)日：2012-07-10
申请号：US12795020
申请日：2010-06-07
申请人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
发明人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/1284 , G06T11/001 , G11C11/161 , G11C11/1675
摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要翻译：具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。这些元素具有单向写入方案。

76. 发明申请

US20100246245A1 SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME 有权
标题翻译：具有单向写入方案的旋转扭矩记忆
公开(公告)号：US20100246245A1
公开(公告)日：2010-09-30
申请号：US12795020
申请日：2010-06-07
申请人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
发明人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/1284 , G06T11/001 , G11C11/161 , G11C11/1675
摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要翻译：具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。这些元素具有单向写入方案。

77. 发明授权

US08054678B2 Stuck-at defect condition repair for a non-volatile memory cell 失效
标题翻译：对非易失性存储器单元进行卡住缺陷状态修复
公开(公告)号：US08054678B2
公开(公告)日：2011-11-08
申请号：US12900303
申请日：2010-10-07
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
IPC分类号： G11C11/00
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
摘要翻译：一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元中的卡入缺陷状况的方法和装置。在一些实施例中，电阻感测元件具有磁性隧道结（MTJ）和位于电阻感测元件附近的修复平面。修复平面在MTJ中注入磁场以修复卡住的缺陷状况。

78. 发明申请

US20100073984A1 MAGNETIC SHIFT REGISTER AS COUNTER AND DATA STORAGE DEVICE 有权
标题翻译：磁性移位寄存器作为计数器和数据存储设备
公开(公告)号：US20100073984A1
公开(公告)日：2010-03-25
申请号：US12233760
申请日：2008-09-19
申请人： Haiwen Xi , Dimitar V. Dimitrov , Andreas Roelofs , Xiaobin Wang , Paul E. Anderson , Hongyue Liu
发明人： Haiwen Xi , Dimitar V. Dimitrov , Andreas Roelofs , Xiaobin Wang , Paul E. Anderson , Hongyue Liu
IPC分类号： G11C19/00
CPC分类号： G11C19/0841 , G11C11/14
摘要： A register having a track with a first electrode is at the first end to supply a current to the track in a first direction and a second electrode at the second end to supply a current to the track in a second direction, the second direction being opposite to the first direction. A first domain wall anchor and a second domain wall anchor are positioned proximate the track between the first electrode and the second electrode. Each of the domain wall anchors has a ferromagnetic pinned layer and a barrier layer proximate the track, with the barrier layer between the track and the ferromagnetic pinned layer. The ferromagnetic layer has a magnetization orientation pinned perpendicular to the magnetization orientation of the track.
摘要翻译：具有带有第一电极的轨道的寄存器处于第一端，以沿第一方向向轨道提供电流，而第二端处的第二电极在第二方向上向轨道提供电流，第二方向相反到第一个方向。第一结构域壁锚和第二结构域锚固件位于第一电极和第二电极之间的轨道附近。每个畴壁锚固件具有铁磁钉扎层和靠近轨道的阻挡层，阻挡层在轨道和铁磁性钉扎层之间。铁磁层具有垂直于轨道的磁化取向钉扎的磁化取向。

79. 发明授权

US08659939B2 Spin-torque memory with unidirectional write scheme 有权
标题翻译：具有单向写入方案的自旋力矩存储器
公开(公告)号：US08659939B2
公开(公告)日：2014-02-25
申请号：US13530460
申请日：2012-06-22
申请人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
发明人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/1284 , G06T11/001 , G11C11/161 , G11C11/1675
摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要翻译：具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。这些元素具有单向写入方案。

80. 发明申请

US20120261778A1 SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME 有权
标题翻译：具有单向写入方案的旋转扭矩记忆
公开(公告)号：US20120261778A1
公开(公告)日：2012-10-18
申请号：US13530460
申请日：2012-06-22
申请人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
发明人： Haiwen Xi , Dexin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Song S. Xue
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/1284 , G06T11/001 , G11C11/161 , G11C11/1675
摘要： Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要翻译：具有钉扎层，两个自由层和靠近至少一个自由层的电流阻挡绝缘层的自旋扭矩磁存储元件。存储元件的电阻状态（例如，低电阻或高电阻）通过在一个方向上通过元件的电流来改变。换句话说，为了从低电阻变为高电阻，电流的方向与从高电阻变为低电阻相同。这些元素具有单向写入方案。

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