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    • 73. 发明授权
    • Mobile device clamp holder with damped release mechanism
    • 带阻尼释放机构的移动式装置夹具
    • US07540459B2
    • 2009-06-02
    • US11463457
    • 2006-08-09
    • Mitsuhiro AsanoYasuhiro YamamotoMichael Göllnitz
    • Mitsuhiro AsanoYasuhiro YamamotoMichael Göllnitz
    • A47F5/00
    • H04M1/04B60R11/0241
    • A holder for a mobile electronic device includes first and second clamping jaws, at least the first clamping jaw being displaceable toward the second clamping jaw to clamp the mobile electronic device. The holder also includes a stop element and an entraining element connected to the first clamping jaw, the entraining element being shaped so that it is displaceable with respect to the stop element, namely jointly with the clamping jaw connected to it, in which case at least one extreme position corresponding to the maximum opening of the clamping jaw is defined in the displacement path by the impact of the stop element against the entraining element. The holder includes a damper element, which is mounted on the stop element and damps the stopping of the stop element against the entraining element.
    • 用于移动电子设备的保持器包括第一和第二夹爪,至少第一夹爪可向第二夹爪移动以夹紧移动电子装置。 保持器还包括止动元件和连接到第一夹紧爪的夹带元件,夹持元件成形为使得其相对于止动元件可移动,即与连接到止动元件的夹爪相连,在这种情况下至少 通过止动元件相对于夹带元件的冲击,在位移路径中限定与钳夹的最大开口相对应的一个极限位置。 保持器包括阻尼元件,该阻尼元件安装在止动元件上并阻止止动元件停止夹带元件。
    • 74. 发明授权
    • Method for manufacturing a semiconductor device
    • 半导体器件的制造方法
    • US07507508B2
    • 2009-03-24
    • US11306380
    • 2005-12-27
    • Akira WatanabeYasuhiro Yamamoto
    • Akira WatanabeYasuhiro Yamamoto
    • G03C5/00G03F9/00
    • G03F7/70641G03F7/70625
    • A method for manufacturing a semiconductor device is disclosed. The method can assess exposure conditions by forming a predetermined assessment pattern on a principal surface of a semiconductor wafer. The predetermined assessment pattern includes a first assessment pattern having a remaining pattern, and a second assessment pattern which includes a remaining pattern formed in a position lower than the first assessment pattern in the direction of the optical axis of an exposure device. The method includes a preparation step, and a step of manufacturing an actual semiconductor device. The preparation step includes a forming step, a measuring step, a calculating step, and a creating step. The step of manufacturing an actual semiconductor device includes a forming step, a measuring step, a calculating step and an assessing step.
    • 公开了一种制造半导体器件的方法。 该方法可以通过在半导体晶片的主表面上形成预定的评估图案来评估曝光条件。 预定评估图案包括具有剩余图案的第一评估图案和包括在曝光装置的光轴方向上形成在比第一评估图案低的位置的剩余图案的第二评估图案。 该方法包括制备步骤和制造实际半导体器件的步骤。 准备步骤包括形成步骤,测量步骤,计算步骤和创建步骤。 制造实际半导体器件的步骤包括形成步骤,测量步骤,计算步骤和评估步骤。
    • 75. 发明授权
    • Image processing device
    • 图像处理装置
    • US07499597B2
    • 2009-03-03
    • US11169920
    • 2005-06-30
    • Yasuhiro Yamamoto
    • Yasuhiro Yamamoto
    • H04N5/76
    • H04N5/907H04N5/772
    • An image-processing device that performs image processes for pixel data of an image, to generate image-processed data. The amount of the image-processed data is greater than that of the pixel data, for each line of the image. The pixel data are stored in a recording area of a memory. The capacity of the recording area for one line's worth of the pixel data is coincident with a maximum amount of data in one line of the image-processed data. The pixel data are stored in the recording area such that a last pixel data in a sequentially stored series of pixel data for the one line is stored at an end address of the recording area.
    • 对图像的像素数据进行图像处理的图像处理装置,生成图像处理数据。 对于图像的每一行,图像处理数据的量大于像素数据的量。 像素数据被存储在存储器的记录区域中。 一行像素数据的记录区域的容量与图像处理数据的一行中的最大数据量一致。 将像素数据存储在记录区域中,使得在一行的顺序存储的像素数据系列中的最后一个像素数据被存储在记录区域的结束地址处。
    • 76. 发明授权
    • Amino resin composite particle and method of producing same
    • 氨基树脂复合颗粒及其制备方法
    • US07378153B2
    • 2008-05-27
    • US10230409
    • 2002-08-29
    • Yasuhiro YamamotoYasuhiro ShingaiHideki Oishi
    • Yasuhiro YamamotoYasuhiro ShingaiHideki Oishi
    • B32B1/00
    • C08J3/21C08G8/30C08J2361/20C08L61/26Y10T428/2982Y10T428/2991Y10T428/2993Y10T428/2998
    • The present invention provides an amino resin composite particle in which an inorganic compound is fixed (firmly adhered) on a surface of an amino resin particle, for example, an amino resin composite particle, in which a child particle made of the inorganic compound is fixed on a mother particle made of the amino resin particle, and a method of easily and inexpensively producing the amino resin composite particle. After an amino compound such as benzoguanamine is reacted with formaldehyde, so as to prepare a reaction mixture containing an amino resin precursor to be the mother particle, an emulsion of the reaction mixture and an aqueous solution of an emulsifier, and an aqueous dispersion of the inorganic compound, such as silica powder, to be the child particle are mixed with a shear force application, so as to emulsify them to have an emulsion thereof. The emulsion is hardened by adding a catalyst. The thus obtained amino resin composite particle has a firm-adhering ratio of the inorganic compound of 10% or more.
    • 本发明提供一种氨基树脂复合颗粒,其中将无机化合物固定(牢固地粘合)在氨基树脂颗粒的表面上,例如氨基树脂复合颗粒,其中由无机化合物制成的儿童颗粒是固定的 在由氨基树脂颗粒制成的母体颗粒上,以及容易且廉价地制备氨基树脂复合颗粒的方法。 在将氨基化合物如苯并胍胺与甲醛反应之后,制备含有作为母体的氨基树脂前体的反应混合物,反应混合物的乳液和乳化剂的水溶液和水分散体 将作为子粒子的无机化合物如二氧化硅粉末与剪切力混合,以使其乳化成具有其乳液。 通过加入催化剂使乳液硬化。 由此得到的氨基树脂复合粒子的无机化合物的固着比例为10%以上。
    • 78. 发明授权
    • Flare measuring mask and flare measuring method of semiconductor aligner
    • 半导体校准器的耀斑测量面罩和耀斑测量方法
    • US07186481B2
    • 2007-03-06
    • US10761215
    • 2004-01-22
    • Yasuhiro YamamotoAkira Watanabe
    • Yasuhiro YamamotoAkira Watanabe
    • G03F9/00
    • G03F7/7085G03F1/44
    • A flare measuring mask and a flare measuring method are capable of measuring flare at high sensitivity by an optical measuring instrument. The first measuring portion has a double cross shielding area including first stripe-shaped shielding portions of the same figure aligned in parallel at regular intervals and third stripe-shaped shielding portions of the same figure aligned in parallel at regular intervals, crossing with the first shielding portions at right angles, and the second measuring portion includes second-stripe shaped shielding portions identical to the first shielding portions of the first measuring portion and fourth stripe-shaped shielding portions identical to the third shielding portions, crossing with the second shielding portions at right angles in a central portion. In the resist length measuring process, the presence of the flare is checked by measuring the length of the resist pattern corresponding to the respective shielding portions in the longitudinal direction.
    • 耀斑测量面罩和耀斑测量方法能够通过光学测量仪器以高灵敏度测量耀斑。 第一测量部分具有双交叉屏蔽区域,包括以规则间隔平行排列的同一图形的第一条形屏蔽部分和同一图形的第三条形屏蔽部分以规则间隔平行排列,与第一屏蔽 第二测量部分包括与第一测量部分的第一屏蔽部分相同的第二条形屏蔽部分和与第三屏蔽部分相同的第四条形屏蔽部分,与第二屏蔽部分在右边交叉 中心部分的角度。 在抗蚀剂长度测量过程中,通过测量与纵向上各个屏蔽部分对应的抗蚀剂图案的长度来检查闪光的存在。
    • 79. 发明申请
    • METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20060199089A1
    • 2006-09-07
    • US11306380
    • 2005-12-27
    • Akira WatanabeYasuhiro Yamamoto
    • Akira WatanabeYasuhiro Yamamoto
    • G06F17/50G03C5/00
    • G03F7/70641G03F7/70625
    • A method for manufacturing a semiconductor device is disclosed. The method can assess exposure conditions by forming a predetermined assessment pattern on a principal surface of a semiconductor wafer. The predetermined assessment pattern includes a first assessment pattern having a remaining pattern, and a second assessment pattern which includes a remaining pattern formed in a position lower than the first assessment pattern in the direction of the optical axis of an exposure device. The method includes a preparation step, and a step of manufacturing an actual semiconductor device. The preparation step includes a forming step, a measuring step, a calculating step, and a creating step. The step of manufacturing an actual semiconductor device includes a forming step, a measuring step, a calculating step and an assessing step.
    • 公开了一种制造半导体器件的方法。 该方法可以通过在半导体晶片的主表面上形成预定的评估图案来评估曝光条件。 预定评估图案包括具有剩余图案的第一评估图案和包括在曝光装置的光轴方向上形成在比第一评估图案低的位置的剩余图案的第二评估图案。 该方法包括制备步骤和制造实际半导体器件的步骤。 准备步骤包括形成步骤,测量步骤,计算步骤和创建步骤。 制造实际半导体器件的步骤包括形成步骤,测量步骤,计算步骤和评估步骤。