会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 71. 发明申请
    • Customizable machine translation service
    • 可定制的机器翻译服务
    • US20080249760A1
    • 2008-10-09
    • US11784161
    • 2007-04-04
    • Daniel MarcuWilliam WongFelix Lung
    • Daniel MarcuWilliam WongFelix Lung
    • G06F17/28
    • G06F17/289
    • Embodiments of the present invention provide a system and method for providing a translation service. The method comprises providing a translation interface accessible via a network. The translation interface receives specialized data associated with a domain from a member. A text string written in a source language is received from the member via the translation interface. A domain-based translation engine is selected. The domain-based translation engine may be associated with a source language, a target language, and a domain. The text string is translated into the target language using, at least in part, by the selected domain-based translation engine. The translated text string is transmitted to the member via the Internet. In some embodiments, a translation memory is generated based on the specialized data.
    • 本发明的实施例提供了一种用于提供翻译服务的系统和方法。 该方法包括提供可通过网络访问的翻译界面。 翻译界面从成员接收与域相关联的专用数据。 通过翻译界面从成员收到以源语言编写的文本字符串。 选择基于域的翻译引擎。 基于域的翻译引擎可以与源语言,目标语言和域相关联。 文本字符串至少部分地由所选择的基于域的翻译引擎翻译成目标语言。 翻译的文本字符串通过互联网传输给会员。 在一些实施例中,基于专门的数据生成翻译记忆库。
    • 73. 发明申请
    • Power supply unit with perforated housing
    • 电源单元带有穿孔外壳
    • US20070081306A1
    • 2007-04-12
    • US11246650
    • 2005-10-06
    • William Wong
    • William Wong
    • H05K7/20
    • G06F1/26G06F1/20H05K7/20172
    • A power supply unit (PSU) has walls which define an internal volume of the PSU. A metal sheet forming left and right side walls and an upper wall is provided with plural perforations on each of those walls. The perforations are circular in shape, and formed in a regular grid pattern. The perforations are formed by punching the metal sheet before it is bent into shape. The perforations in the housing of the PSU allow hotspots to be carried through the walls of the housing of the PSU, following which the hotspots are unable to damage internal components of the PSU. This allows the use of reduced flow rate fans.
    • 电源单元(PSU)具有限定PSU内部容积的墙壁。 形成左右侧壁和上壁的金属板在这些壁中的每一个上设置有多个穿孔。 穿孔是圆形的,并且形成为规则的网格图案。 穿孔通过在金属板弯曲成形之前冲压而形成。 PSU的壳体中的穿孔允许热点通过PSU的壳体的壁承载,随后热点不能损坏PSU的内部部件。 这允许使用减少流量的风扇。
    • 75. 发明申请
    • Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates
    • 在不同基板上制造多晶半导体薄膜异质结构的方法
    • US20060068563A1
    • 2006-03-30
    • US10950452
    • 2004-09-28
    • William WongJeng-Ping LuRobert Street
    • William WongJeng-Ping LuRobert Street
    • H01L21/30
    • H01L27/1266H01L21/76254H01L21/763H01L27/1214H01L27/1274H01L29/78603
    • According to various exemplary embodiments of this invention, a method of producing a semiconductor structure is provided that includes providing a layered structure on a first substrate, the layered structure including a silicon layer that is provided over a first dielectric layer, a first dielectric layer that is provided over an etch-stop layer, the etch-stop layer provided over a buffer layer, the buffer layer provided over a sacrificial layer, and a sacrificial layer provided over a first substrate. Moreover, various exemplary embodiments of the methods of this invention provide for a second substrate over the layered structure, separating the first substrate and the sacrificial layer from the buffer layer, separating the buffer layer and the etch-stop layer from the first dielectric layer and providing a drain electrode and a source electrode over the layered structure. Moreover, according to various exemplary embodiments of the devices of this invention, a transistor device is provided that includes a substrate, a gate electrode over the substrate, a laser recrystallized polycrystalline semiconductor layer over the gate electrode and a source electrode and a drain electrode over the laser recrystallized polycrystalline semiconductor. Finally, according to various exemplary embodiments of the devices of this invention, a transistor device is provided that includes a substrate, a laser recrystallized polycrystalline semiconductor over the substrate, a source electric and a drain electrode over the laser recrystallized polycrystalline semiconductor and a gate electrode over the source electrode and the drain electrode.
    • 根据本发明的各种示例性实施例,提供了一种制造半导体结构的方法,其包括在第一基板上提供分层结构,所述层状结构包括设置在第一介电层上的硅层,第一介电层, 提供在蚀刻停止层上,在缓冲层上提供的蚀刻停止层,设置在牺牲层上的缓冲层以及设置在第一衬底上的牺牲层。 此外,本发明方法的各种示例性实施例提供了层叠结构上的第二衬底,将第一衬底和牺牲层与缓冲层分离,将缓冲层和蚀刻停止层与第一介电层分离,以及 在层状结构上设置漏电极和源电极。 此外,根据本发明的装置的各种示例性实施例,提供了一种晶体管器件,其包括衬底,衬底上的栅电极,栅电极上的激光再结晶多晶半导体层,以及源电极和漏电极 激光再结晶多晶半导体。 最后,根据本发明的器件的各种示例性实施例,提供了一种晶体管器件,其包括衬底,衬底上的激光再结晶多晶半导体,激光再结晶多晶半导体上的源电极和漏电极以及栅电极 在源电极和漏电极上。
    • 76. 发明申请
    • Sub-resolution gaps generated by controlled over-etching
    • 通过控制过蚀刻产生的子分辨率间隙
    • US20060063369A1
    • 2006-03-23
    • US10943624
    • 2004-09-17
    • JengPing LuJackson HoChinwen ShihMichael ChabinycWilliam Wong
    • JengPing LuJackson HoChinwen ShihMichael ChabinycWilliam Wong
    • H01L21/4763H01L21/302
    • H01L21/76838B82Y30/00H01L21/28506H01L27/124
    • Controlled overetching is utilized to produce metal patterns having gaps that are smaller than the resolution limits of the feature patterning (e.g., photolithography) process utilized to produce the metal patterns. A first metal layer is formed and masked, and exposed regions are etched away. The etching process is allowed to continue in a controlled manner to produced a desired amount of over-etching (i.e., undercutting the mask) such that an edge of the first metal layer is offset from an edge of the mask by a predetermined gap distance. A second metal layer is then deposited such that an edge of the second metal layer is spaced from the first metal layer by the predetermined gap distance. The metal gap is used to define, for example, transistor channel lengths, thereby facilitating the production of transistors having channel lengths defined by etching process control that are smaller than the process resolution limits.
    • 控制过蚀刻用于产生具有小于用于产生金属图案的特征图案化(例如,光刻)工艺的分辨率限制的间隙的金属图案。 第一金属层被形成并被掩蔽,并且暴露的区域被蚀刻掉。 允许蚀刻处理以受控的方式继续,以产生期望量的过蚀刻(即,底切掩模),使得第一金属层的边缘以预定的间隙距离偏离掩模的边缘。 然后沉积第二金属层,使得第二金属层的边缘与第一金属层隔开预定的间隙距离。 金属间隙用于限定例如晶体管沟道长度,由此有助于生产具有小于工艺分辨率极限的蚀刻工艺控制定义的沟道长度的晶体管。