专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US07863167B2 Method of manufacturing group III nitride crystal 失效
标题翻译：制备III族氮化物晶体的方法
公开(公告)号：US07863167B2
公开(公告)日：2011-01-04
申请号：US12370606
申请日：2009-02-13
申请人： Fumitaka Sato , Seiji Nakahata
发明人： Fumitaka Sato , Seiji Nakahata
IPC分类号： H01L21/00
CPC分类号： C30B29/403 , C30B29/406 , C30B33/12
摘要： Made available is a Group III nitride crystal manufacturing method whereby incidence of cracking in the III-nitride crystal when the III-nitride substrate is removed is kept to a minimum. III nitride crystal manufacturing method provided with: a step of growing, onto one principal face (10m) of a III-nitride substrate (10), III-nitride crystal (20) at least either whose constituent-atom type and ratios, or whose dopant type and concentration, differ from those of the III-nitride substrate (10); and a step of removing the III-nitride substrate (10) by vapor-phase etching.
摘要翻译：可获得的是III族氮化物晶体制造方法，其中，当除去III族氮化物衬底时，III族氮化物晶体中的裂纹的发生率保持最小。 III族氮化物晶体制造方法，其特征在于，在III族氮化物衬底（10）的一个主面（10μm）上生长III族氮化物晶体（20）的步骤，至少其组成原子类型和比例，或者其掺杂剂类型和浓度不同于III族氮化物衬底（10）的掺杂剂类型和浓度; 以及通过气相蚀刻除去III族氮化物衬底（10）的步骤。

72. 发明授权

US07843040B2 Gallium nitride baseplate and epitaxial substrate 有权
标题翻译：氮化镓基板和外延基板
公开(公告)号：US07843040B2
公开(公告)日：2010-11-30
申请号：US12326108
申请日：2008-12-02
申请人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
发明人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
IPC分类号： H01L29/20
CPC分类号： C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/02581 , H01L21/0262
摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11). Next, gaseous iron compound GFe from a source (13) for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source (15) are caused to react with each other in a mixing container (16) to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source (17), and second substance gas GGa containing elemental gallium are supplied to a reaction tube (21) to form iron-doped gallium nitride (23) on the substrate (1).
摘要翻译：提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。将诸如（0001）切割蓝宝石衬底的衬底（1）放置在金属有机氯化物气相装置（11）的基座上。接下来，使来自氯化氢源（15）的铁化合物源（13）和来自氯化氢源（15）的氯化氢气体G1HCl的气态铁化合物GFe在混合容器（16）中彼此反应，生成气体GFeComp的含铁反应产物，如氯化铁（FeCl2）。与该产生相关，含铁反应产物GFeComp，含有氮源（17）的元素氮的第一物质气体GN和含有元素镓的第二物质气体GGa被供给到反应管（21）中，在衬底（1）上的掺杂氮化镓（23）。

73. 发明申请

US20080296585A1 GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE 失效
标题翻译： GaN晶体和GaN晶体衬底的生长方法
公开(公告)号：US20080296585A1
公开(公告)日：2008-12-04
申请号：US12130082
申请日：2008-05-30
申请人： Naoki MATSUMOTO , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Naoki MATSUMOTO , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： H01L29/207 , H01L21/205
CPC分类号： C30B29/406 , C30B25/20
摘要： A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.
摘要翻译：制造GaN晶体的方法涉及在GaN晶种衬底上生长GaN晶体。该方法包括以下步骤：制备包括第一掺杂剂的GaN籽晶衬底，使得GaN晶种衬底的热膨胀系数变得大于GaN晶体的热膨胀系数，并将GaN晶体生长至至少1mm的厚度在GaN晶种衬底上。因此，可以提供一种能够抑制裂纹的产生和生长厚GaN的晶体的GaN晶体的制造方法以及GaN晶体基板。

74. 发明申请

US20070280872A1 Method of growing gallium nitride crystal and gallium nitride substrate 审中-公开
标题翻译：生长氮化镓晶体和氮化镓衬底的方法
公开(公告)号：US20070280872A1
公开(公告)日：2007-12-06
申请号：US11806888
申请日：2007-06-05
申请人： Takuji Okahisa , Kensaku Motoki , Koji Uematsu , Seiji Nakahata , Ryu Hirota , Hideyuki Ijiri , Hitoshi Kasai , Shunsuke Fujita , Fumitaka Sato , Toru Matsuoka
发明人： Takuji Okahisa , Kensaku Motoki , Koji Uematsu , Seiji Nakahata , Ryu Hirota , Hideyuki Ijiri , Hitoshi Kasai , Shunsuke Fujita , Fumitaka Sato , Toru Matsuoka
IPC分类号： C30B19/00 , C01B21/06 , H01L21/322
CPC分类号： C30B29/406 , C01B21/0632 , C01P2002/54 , C30B25/183 , H01L21/0237 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0257 , H01L21/02609 , H01L21/02639 , H01L21/02642
摘要： The GaN facet growth method produces defect accumulating regions H on masks by forming a dotmask or a stripemask on an undersubstrate, growing GaN in a reaction furnace in vapor phase, inducing GaN crystals on exposed parts without covering the masks, inviting facets starting from verges of the masks and producing defect accumulating regions H on the mask. The defect accumulating regions H have four versions, that is, non (O), polycrystal (P), c-axis inclining single crystal (A) and orientation inversion (J). The best is the orientation inversion region (J). A sign of occurrence of the orientation inversion regions (J) is beaks of inversion orientation appearing on facets. GaN is grown on a masked undersubstrate by supplying a carbon material at a hydrocarbon partial pressure of 10 Pa to 5 kPa for 0.5 hour to 2 hour by an HVPE facet growth method without burying facets.
摘要翻译： GaN面生长方法通过在下衬底上形成网状掩模或剥离掩模来形成掩模上的缺陷积聚区H，在气相中在反应炉中生长GaN，在不覆盖掩模的情况下在暴露部分上诱导GaN晶体，掩模，并在掩模上产生缺陷累积区域H. 缺陷积聚区H具有四种形式，即非（O），多晶（P），c轴倾斜单晶（A）和取向反转（J）。最好的是取向反演区（J）。取向反转区域（J）的发生的标志是出现在面上的反转取向的喙。通过在没有掩埋面的HVPE刻面生长法中，通过以10Pa〜5kPa的烃分压供给0.5小时〜2小时的碳材料，在掩蔽的底基板上生长GaN。

75. 发明申请

US20070215982A1 Gallium Nitride Baseplate, Epitaxial Substrate, and Method of Forming Gallium Nitride 失效
标题翻译：氮化镓基板，外延基板和形成氮化镓的方法
公开(公告)号：US20070215982A1
公开(公告)日：2007-09-20
申请号：US11276966
申请日：2006-03-20
申请人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
发明人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
IPC分类号： H01L29/20 , H01L21/205
CPC分类号： C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/02581 , H01L21/0262
摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate 1, such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus 11. Next, gaseous iron compound GFe from a source 13 for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source 15 are caused to react with each other in a mixing container 16 to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source 17, and second substance gas GGa containing elemental gallium are supplied to a reaction tube 21 to form iron-doped gallium nitride 23 on the substrate 1.
摘要翻译：提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。将具有（0001）面的蓝宝石衬底等基板1放置在金属有机氯化物气相装置11的基座上。接下来，使来自氯化氢源15的铁化合物诸如二茂铁和氯化氢气体的来源13的气态铁化合物G 1 Fe < 彼此混合在混合容器16中以产生含铁反应产物如氯化铁（FeCl 2）的气体G FeCl 2。与该产生相关联，来自氮源17的含铁反应产物G FeCO 2，含有元素氮的第一物质气体G N N和第二物质气体G

76. 发明申请

US20060195710A1 Electronic device and power saving control method 失效
公开(公告)号：US20060195710A1
公开(公告)日：2006-08-31
申请号：US11341998
申请日：2006-01-27
申请人： Shogo Maeshima , Fumitaka Sato
发明人： Shogo Maeshima , Fumitaka Sato
IPC分类号： G06F1/32
CPC分类号： G06F1/203 , G06F1/206 , G06F1/3203 , Y02D10/16
摘要： According to one embodiment, an EC/KBC reads data of an acceleration sensor. The EC/KBC determines whether a computer is in a top heat state. If the EC/KBC determines that the computer is in the top heat state, it notifies a BIOS stored in a BIOS-ROM of a message to this effect. The BIOS which is notified from the EC/KBC that the computer is in the top heat state notifies an OS (Operating System) of the message to this effect. The OS sets a CPU to a power saving mode by an existing means such as the power saving utility of the OS, and sets the computer to the power saving mode.

77. 发明授权

US07093371B2 Direction indicating device 有权
标题翻译：方向指示装置
公开(公告)号：US07093371B2
公开(公告)日：2006-08-22
申请号：US10720348
申请日：2003-11-25
申请人： Kunihito Takeuchi , Fumitaka Sato
发明人： Kunihito Takeuchi , Fumitaka Sato
IPC分类号： G01C17/30
CPC分类号： G01C17/38
摘要： A direction indicating device in which a current display direction is determined in consideration of the historical information of a direction of vehicle specified by a direction specifying unit 1 and a previous display direction, to be specific, in a case where the current direction of vehicle specified by the direction specifying unit 1 agrees with a previous direction of vehicle, the current display direction is changed to agree with the current direction of vehicle, and in a case where the current direction of vehicle specified by the direction specifying unit 1 is different from the previous direction of vehicle, the current display direction is made to agree with the previous display direction.
摘要翻译：考虑到由方向指定单元1指定的车辆方向的历史信息和先前的显示方向来确定当前显示方向的方向指示装置，具体而言，在指定的车辆的当前方向的情况下方向指定单元1与车辆的前一方向一致时，当前显示方向被改变以与车辆的当前方向一致，并且在方向指定单元1指定的车辆的当前方向与车辆的前方向，使当前显示方向与先前的显示方向一致。

78. 发明申请

US20050021341A1 In-vehicle controller and program for instructing computer to excute operation instruction method 有权
标题翻译：车载控制器和指示计算机执行操作指令方法的程序
公开(公告)号：US20050021341A1
公开(公告)日：2005-01-27
申请号：US10497695
申请日：2003-10-07
申请人： Tsutomu Matsubara , Masato Hirai , Emiko Kido , Fumitaka Sato
发明人： Tsutomu Matsubara , Masato Hirai , Emiko Kido , Fumitaka Sato
IPC分类号： G01C21/00 , G08G1/0969 , G10L15/00 , G10L15/06 , G10L15/22 , G10L15/28 , G10L11/00
CPC分类号： G10L15/07 , G10L2015/223
摘要： In a vehicle-mounted control apparatus, a control unit 2 displays guidance on an operation of the vehicle-mounted control apparatus by voice input on a display device 6, and makes the user get training so that the user can master the techniques for operating the vehicle-mounted control apparatus (in step ST4). At this time, by using a voice which the user tries to input in order to master the techniques for operating the vehicle-mounted control apparatus, the voice recognition unit 5 learns the features of the user's voice in the background, and computes recognition parameters. Thereby, the user can know how to operate the vehicle-mounted control apparatus and can also register the features of the voice in the vehicle-mounted control apparatus.
摘要翻译：在车载控制装置中，控制单元2通过在显示装置6上的语音输入来显示关于车载控制装置的操作的指导，并且使得用户获得训练，使得用户可以掌握操作的技术车载控制装置（步骤ST4）。此时，通过使用用户尝试输入的语音来掌握用于操作车载控制装置的技术，语音识别单元5在后台学习用户语音的特征，并计算识别参数。因此，用户可以知道如何操作车载控制装置，并且还可以在车载控制装置中登记声音的特征。

79. 发明授权

US06278807B1 Data recording/reproducing apparatus, data recording/reproducing method applied to the apparatus, and computer program product used in data processing apparatus 失效
标题翻译：数据记录/再现装置，应用于该装置的数据记录/再现方法，以及在数据处理装置中使用的计算机程序产品
公开(公告)号：US06278807B1
公开(公告)日：2001-08-21
申请号：US09189844
申请日：1998-11-12
申请人： Seigo Ito , Yasuhiro Ishibashi , Fumitaka Sato
发明人： Seigo Ito , Yasuhiro Ishibashi , Fumitaka Sato
IPC分类号： G06K903
CPC分类号： H04N5/76 , G11B20/00086 , G11B20/1879 , H04N5/781 , H04N5/85 , H04N9/8205
摘要： In a data recording and reproducing apparatus which records and reproduces a record medium in which at least two kinds of data having different data types can be recorded, data are read out from the record medium, and a digital watermark is detected from the data read out. The kind of data is determined depending upon whether the digital watermark is detected, and it is determined whether retry processing at the time of reading-out the data and verifying processing at the time of writing should be executed. The retry processing or the verifying processing are executed only for the data which is determined that the retry processing or the verifying processing should be executed. Therefore, in the case of data whose reading-out continuity is more important than reliability, the retry processing is omitted, so that time required for reading-out processing can be shortened. In the case of data whose recording continuity is more important than reliability, the verifying processing is omitted, so that time required for writing processing can be shortened.
摘要翻译：在记录和再现其中可以记录具有不同数据类型的至少两种数据的记录介质的数据记录和再现装置中，从记录介质读出数据，并从读出的数据中检测出数字水印。数据的种类根据是否检测到数字水印来确定，并且确定是否应当执行读取数据时的重试处理和写入时的验证处理。对于确定应该执行重试处理或验证处理的数据，仅执行重试处理或验证处理。因此，在读出连续性比可靠性更重要的数据的情况下，省略重试处理，可以缩短读出处理所需的时间。在其记录连续性比可靠性更重要的数据的情况下，省略了验证处理，从而可以缩短写入处理所需的时间。

80. 发明授权

US06230279B1 System and method for dynamically controlling processing speed of a computer in response to user commands 有权
标题翻译：响应于用户命令动态地控制计算机的处理速度的系统和方法
公开(公告)号：US06230279B1
公开(公告)日：2001-05-08
申请号：US09563820
申请日：2000-05-03
申请人： Koichi Dewa , Masayo Yamaki , Fumitaka Sato
发明人： Koichi Dewa , Masayo Yamaki , Fumitaka Sato
IPC分类号： G06F132
CPC分类号： G06F1/324 , G06F1/3203 , G06F9/30181 , G06F9/3804 , G06F9/3844 , Y02D10/126
摘要： When a user instructs acceleration or deceleration of the CPU processing speed with an “accelerator” button or a “brake” button, a speed control MMI informs power management system software of the corresponding information to change the CPU processing speed. The change is recorded on a speed management database in correspondence with the name of the application program which is currently being executed. Every time acceleration or deceleration of the CPU processing speed is instructed by the user, speed management data is formed on the speed management database. By using the speed management data, the CPU processing speed can be dynamically controlled for each piece of software when it is executed. Further disclosed is a novel power dissipation control system for a microprocessor, adapted to be used in conjunction with the above described MMI.
摘要翻译：当用户通过“加速器”按钮或“制动”按钮指示CPU处理速度的加速或减速时，速度控制MMI向电源管理系统软件通知相应信息以改变CPU处理速度。该变更与当前正在执行的应用程序的名称对应地记录在速度管理数据库中。每当由用户指示CPU处理速度的加速或减速时，速度管理数据形成在速度管理数据库上。通过使用速度管理数据，可以在执行时对每个软件动态地控制CPU处理速度。进一步公开了一种用于微处理器的新型功率耗散控制系统，适用于与上述MMI结合使用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式