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    • 71. 发明专利
    • Defective correction method of color filter
    • 彩色滤光片的有缺陷的校正方法
    • JP2006011244A
    • 2006-01-12
    • JP2004191239
    • 2004-06-29
    • V Technology Co Ltd株式会社ブイ・テクノロジー
    • MIZUMURA MICHINOBUKAJIYAMA KOICHI
    • G02B5/20G02F1/13G02F1/1335G09F9/00
    • PROBLEM TO BE SOLVED: To reduce wasteful consumption of a material used for the correction of a defective part and the occurrence of waste, by quickly and easily performing correction working of the defective part. SOLUTION: The defective correction method comprises applying a masking agent f2 sublimating over a region that is wider than the defective part E of a coloring layer 2a and including the part E in a planar view on the coloring layer 2a of a color filter; applying correction ink f1 on a coloring layer removing region K for removing the masking agent by an ink jet device, after removing the masking agent f2 of a coloring layer region including the defective part E, by applying pulse oscillation laser light (first laser light); forming a formed film 2a1 of the correction ink f1 to correct the defective part E by applying continuous oscillation laser light (second laser light) Lb to heat and harden the correction ink f1 applied to the coloring layer removing region K; and heating and sublimating the residual masking agent f2 on the coloring layer 2a to be removed from the coloring layer 2a. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:通过快速且容易地进行有缺陷部件的校正工作,减少用于校正缺陷部件的材料的浪费消耗和废物的发生。 解决方案:有缺陷的校正方法包括在彩色滤光片的着色层2a上平面地施加在比着色层2a的缺陷部分E宽且包括部分E的区域上升华的掩蔽剂f2 ; 在通过施加脉冲振荡激光(第一激光)去除含有缺陷部分E的着色层区域的掩蔽剂f2之后,通过喷墨装置将修正油墨f1施加到用于除去掩蔽剂的着色层去除区域K上, ; 通过施加连续振荡激光(第二激光)Lb来形成校正油墨f1的成膜膜2a,以校正缺陷部分E,以加热和硬化施加到着色层去除区域K上的校正油墨f1; 加热并升华着色层2a上的残留掩蔽剂f2以从着色层2a除去。 版权所有(C)2006,JPO&NCIPI
    • 72. 发明专利
    • Laser beam machining apparatus
    • 激光加工设备
    • JP2005186100A
    • 2005-07-14
    • JP2003430071
    • 2003-12-25
    • V Technology Co Ltd株式会社ブイ・テクノロジー
    • MIZUMURA MICHINOBUKAJIYAMA KOICHI
    • B23K26/06B23K26/00
    • PROBLEM TO BE SOLVED: To provide a laser beam machining apparatus capable of correctly and efficiently machining a work at a predetermined position by allowing the work to be irradiated with laser beams of the beam shape shaped to a required machining shape and of the uniform energy. SOLUTION: The laser beam machining apparatus comprises a laser beam oscillator 3, an aperture mechanism 4 to shape the beam shape of laser beams L 1 output from the laser beam oscillator 3, and an optical system 7 having an imaging lens 5 and an objective 6 to focus the irradiated laser beams L 0 passed through the aperture mechanism 4 and shaped on a work W. The aperture mechanism 4 comprises a pair of slit mechanisms 4A and 4B deviated in position in the direction of the optical axis R of the laser beams L 1 , and each of the slit mechanisms 4A and 4B has a pair of slit plates 8, 8, 9, 9 facing each other with tip edges of knife edges parallel to each other in the plane orthogonal to the optical axis R of the laser beams L 1 , and a pair of driving means 10a and 10b to independently advance/retract the slit plates 8, 8, 9, 9 in the facing direction. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种激光束加工装置,其能够通过使工件被照射成具有成形为所需加工形状的梁形状的激光束,并且可以正确地和有效地加工在预定位置的工件 均匀的能量。 解决方案:激光束加工装置包括激光束振荡器3,用于使从激光束振荡器3输出的激光束L 1的束形状成形的孔机构4,以及光学系统 7具有成像透镜5和物镜6,以使通过孔机构4的照射激光束L 0 聚焦并成形在工件W上。光圈机构4包括一对狭缝机构4A和 4B在激光束L 的光轴R的方向上偏离位置,并且每个狭缝机构4A和4B具有一对面对每个的狭缝板8,8,9,9 另一个,在与激光束L 1的光轴R正交的平面中的刀刃的尖端边缘彼此平行,另外一对驱动装置10a和10b独立地前进/后退狭缝 板8,8,9,9朝向相反方向。 版权所有(C)2005,JPO&NCIPI
    • 73. 发明专利
    • Working apparatus of flat plate-like work
    • JP2004266014A
    • 2004-09-24
    • JP2003053303
    • 2003-02-28
    • V Technology Co Ltd株式会社ブイ・テクノロジー
    • MIZUMURA MICHINOBUKAJIYAMA KOICHI
    • G01B21/00B24B41/06H01L21/68
    • PROBLEM TO BE SOLVED: To suppress the increase of the size of an entire working apparatus having a work conveying unit which can move by a small drive force in a smooth and stable state even in the case of a large flat plate-like work. SOLUTION: The work conveying unit 3 in the flat plate-like work working apparatus 1 includes a conveying mechanism 7 for grasping the flat plate-like work W to move the work W in a Y-axis direction (y), supporting and guiding mechanisms 8, 9 and 10 for supporting the lower surface of the flat plate-like work W to guide moving of the work in the Y-axis direction (y), and a work stage 11 provided along an X-axis direction at the lower surface side of the flat plate-like work W at the lower position of the working head 6 to support the lower surface of the flat plate-like work W by the pressure of gas. The work stage 11 has a stage body 18. Further, the work stage 11 injects and sucks compressed gas at a gas passage and a gas suction passage provided in the stage body 18 at the moving time of the flat plate-like work W by the conveying mechanism 7 or at the working time of the working head 6, and floats the flat plate-like work W in an infinitesimal amount with respect to the stage body 18 or sucks the work W and stably holds the work W. COPYRIGHT: (C)2004,JPO&NCIPI
    • 75. 发明专利
    • 露光装置
    • 曝光装置
    • JP2015018027A
    • 2015-01-29
    • JP2013143471
    • 2013-07-09
    • 株式会社ブイ・テクノロジーV Technology Co Ltd
    • KAJIYAMA KOICHIMIZUMURA MICHINOBUARAI TOSHINARIHASHIMOTO KAZUSHIGE
    • G03F7/20
    • 【課題】基板の周辺を所定の巾で、短時間に露光するための簡単な露光装置を提供する。【解決手段】基板Wの一辺L1を巾B1で露光する露光用ヘッドと、前記一辺に沿った基準ラインを検出するラインセンサーとを一体的にL1に沿って移動させる移動手段と、ラインセンサーからの検出結果に基づきヘッドの前記一辺L1に直交する方向の位置を補正する移動手段と、前記一辺L1に直交する辺L2に沿って巾B2で露光する露光用ヘッドと、ヘッドを前記直交する辺に沿って移動させる移動手段と、ラインセンサーからの検出結果に基づきヘッドの前記直交する辺L2に直交する方向の位置を補正する移動手段とを有し、ヘッドによる基板Wの前記一辺L1、前記直行する辺L2の露光が同時に開始され、同時に終了するように、ヘッドが前記一辺L1に沿って移動する時間とヘッドが前記直行する辺L2に沿って移動する時間とが等しい。【選択図】図7
    • 要解决的问题:提供一种简单的曝光装置,用于在短时间内以指定的宽度在基底周围进行曝光。解决方案:曝光装置包括移动装置,其移动暴露基板的一侧L1的第一头部 具有宽度B1的W和沿着侧面L1一体地检测基准线的线传感器,基于来自侧面L1的检测结果,沿着与侧面L1正交的方向校正第一头部的位置的移动装置 线路检查器,用于曝光的第二头部,其沿着具有宽度B2的与侧面L1正交的侧面L2暴露;使第二头部沿着与侧面L1正交的侧面移动的移动装置;校正第二头部的位置的移动装置 基于来自线传感器的检测结果,在与正交侧L2的方向正交的方向上。 第一和第二磁头的侧面L1的曝光和基板W的正交侧L2的曝光同时开始并完成,并且第一磁头沿着侧面L1移动的时间和移动的时间 沿着正交侧L2的第二头相同。
    • 77. 发明专利
    • Optical interconnection apparatus
    • 光学互连器件
    • JP2014150520A
    • 2014-08-21
    • JP2013214230
    • 2013-10-11
    • V Technology Co Ltd株式会社ブイ・テクノロジー
    • KAJIYAMA KOICHIMIZUMURA MICHINOBUKANAO MASAYASUISHIKAWA SUSUMUOGAWA KICHIJI
    • H04B10/114H01L31/10H01L33/00H01L33/18H01L33/34H04B10/80
    • H04B10/803H01L31/173
    • PROBLEM TO BE SOLVED: To increase alignment accuracy of light-emitting elements or light-receiving elements on a substrate; enable formation in a comparatively simple manufacturing process even when transmission or reception of an optical signal is relayed by one substrate; and inhibit cross talk in signal transmission between substrates even when light-emitting elements or light-receiving elements are arranged with high density.SOLUTION: In an optical interconnection device 1 which performs transmission or reception of an optical signal between a plurality of semiconductor substrates 10 arranged in a laminated manner, light-emitting elements 2 or light-receiving elements 3 arranged on one semiconductor substrate 10 include pn junction parts 10pn by using the semiconductor substrate 10 as a common semiconductor layer; and in a pair of a light-emitting element 2 and a light-receiving element 3 which is formed on one surface of the semiconductor substrate 10 and performs transmission or reception of an optical signal between different semiconductor substrates 10, light emitted by the light-emitting element 2 penetrates the semiconductor substrate and is received by the light-receiving element 3.
    • 要解决的问题:提高基板上的发光元件或光接收元件的对准精度; 即使当光信号的发送或接收被一个基板中继时,也可以在比较简单的制造过程中形成; 并且即使当发光元件或光接收元件以高密度排列时,也抑制基板之间的信号传输中的串扰。解决方案:在多个半导体基板10之间执行光信号的发送或接收的光互连装置1 布置在一个半导体衬底10上的发光元件2或光接收元件3通过使用半导体衬底10作为公共半导体层而包括pn结部分10pn, 并且在一对发光元件2和受光元件3中,形成在半导体衬底10的一个表面上并且在不同的半导体衬底10之间进行光信号的发送或接收, 发光元件2穿透半导体衬底并由光接收元件3接收。
    • 78. 发明专利
    • Vapor deposition mask
    • 蒸气沉积掩模
    • JP2014088594A
    • 2014-05-15
    • JP2012238956
    • 2012-10-30
    • V Technology Co Ltd株式会社ブイ・テクノロジー
    • MIZUMURA MICHINOBU
    • C23C14/04
    • B05B15/045C23C14/042H01L51/001
    • PROBLEM TO BE SOLVED: To vapor-deposit a thin film pattern having a uniform thickness by excluding influence of a shadow of vapor deposition caused by an edge o f an opening that a vapor deposition material passes through.SOLUTION: There is provided a vapor deposition mask for forming a thin film pattern by making a vapor deposition material adhere onto a substrate, the vapor deposition mask including a thin plate type magnetic metal member provided with a through hole having a larger shape size than the thin film pattern at a position corresponding to the thin film pattern and a resin-made film 2 provided in contact with one surface of the magnetic metal member 1, having an opening pattern formed in the through hole 4 at a position corresponding to the thin film pattern to the same shape size with the thin film pattern, and transmitting visible light. The opening pattern 5 is provided in an opening pattern formation region 7 surrounded with a region 6 as a shadow of vapor deposition, determined by the thickness of the magnetic metal member 1 and a maximum angle of incidence of the vapor deposition material on a film surface, in the through hole.
    • 要解决的问题:通过排除由气相沉积材料通过的开口的边缘引起的气相沉积阴影的影响,来蒸镀具有均匀厚度的薄膜图案。溶液:提供蒸镀掩模 为了通过使气相沉积材料粘附到基底上来形成薄膜图案,该蒸镀掩模包括薄板型磁性金属构件,该薄板型磁性金属构件具有与薄膜图案相对应的位置处的具有比薄膜图案更大的形状尺寸的通孔 薄膜图案和与磁性金属构件1的一个表面接触的树脂膜2,在与该薄膜图案对应的位置处形成在通孔4中的与图案相同的形状的开口图案 胶片图案和透射可见光。 开口图案5设置在由区域6包围的开口图案形成区域7中,作为气相沉积的阴影,由磁性金属构件1的厚度确定,并且蒸镀材料在膜表面上的最大入射角 ,在通孔中。
    • 79. 发明专利
    • Method of forming low temperature polysilicon film and method of manufacturing thin film transistor
    • 形成低温多晶硅膜的方法和制造薄膜晶体管的方法
    • JP2014060184A
    • 2014-04-03
    • JP2012202597
    • 2012-09-14
    • V Technology Co Ltd株式会社ブイ・テクノロジー
    • MIZUMURA MICHINOBU
    • H01L21/20H01L21/336H01L29/786H01L51/50
    • PROBLEM TO BE SOLVED: To provide a method of forming a low temperature polysilicon film which allows for elongation of the grain growth direction in a desired direction depending on the direction of movement of carriers, even if the planar shape of a channel region is complicated, and allows for formation of a channel region of high speed operation at an arbitrary position, and to provide a method of manufacturing a thin film transistor.SOLUTION: On an insulator film formed on a substrate 1, amorphous silicon films 3a, 3b are patterned in a predetermined channel shape. Subsequently, in a region 4 including the amorphous silicon films 3a, 3b, the amorphous silicon films 3a, 3b are irradiated with laser light and fused temporarily, before being solidified. Solidification of a fusion part is started from the edge of a channel region, and a polysilicon film having a grain boundary extending from the edge toward the central part is formed. When forming a source-drain electrode, and the like, by using the polysilicon film as a channel region, a transistor of high speed operation having a high carrier mobility can be obtained.
    • 要解决的问题:为了提供形成低温多晶硅膜的方法,其允许根据载流子的移动方向在所需方向上延长晶粒生长方向,即使沟道区域的平面形状复杂, 并且允许在任意位置形成高速操作的沟道区域,并且提供制造薄膜晶体管的方法。解决方案:在形成在衬底1上的绝缘膜上,非晶硅膜3a,3b被图案化 预定的通道形状。 随后,在包括非晶硅膜3a,3b的区域4中,非晶硅膜3a,3b用激光照射,并在固化之前暂时融合。 熔融部的凝固从沟道区的边缘开始,并且形成从边缘向中心部延伸的晶界的多晶硅膜。 当形成源 - 漏电极等时,通过使用多晶硅膜作为沟道区,可以获得具有高载流子迁移率的高速工作晶体管。
    • 80. 发明专利
    • Laser annealing device and laser annealing method
    • 激光退火装置和激光退火方法
    • JP2013157549A
    • 2013-08-15
    • JP2012018732
    • 2012-01-31
    • V Technology Co Ltd株式会社ブイ・テクノロジー
    • MIZUMURA MICHINOBU
    • H01L21/20H01L21/268H01L21/336H01L29/786
    • PROBLEM TO BE SOLVED: To provide laser annealing which allows for high speed operation of a transistor, by growing grains in the channel region of the transistor in the direction of current flow, thereby reducing grain boundary in the channel region in the current flow direction.SOLUTION: Laser light is condensed by a micro lens array toward an amorphous silicon film, and a region corresponding to each micro lens is irradiated with the laser light thus condensed. The part thus irradiated is thereby melted and then solidified, and modified to a polysilicon film. In this case, a mask is placed so that the aperture thereof is interposed in the optical path of each micro lens, and the irradiation pattern of laser light in each irradiation part is defined by the aperture. The laser light passing through each aperture imparts such a temperature distribution that the temperature is low relatively to the irradiation part near the edge of the aperture, and high in the center of the aperture. Consequently, the current flow direction of the polysilicon film is substantially orthogonal to a part of the edge of the aperture.
    • 要解决的问题:为了提供允许晶体管的高速运行的激光退火,通过在电流方向上生长晶体管的沟道区域中的晶粒,从而减小了当前流动方向上的沟道区域中的晶界。 解决方案:激光通过微透镜阵列朝向非晶硅膜凝结,并且对应于每个微透镜的区域用如此冷凝的激光照射。 由此照射的部分熔化,然后固化,并修饰成多晶硅膜。 在这种情况下,放置掩模,使其孔径插入每个微透镜的光路中,并且每个照射部分中的激光的照射图案由孔限定。 通过每个孔的激光赋予温度分布,该温度分布相对于靠近孔的边缘的照射部分的温度较低,并且在孔的中心高。 因此,多晶硅膜的电流流动方向基本上与孔的边缘的一部分正交。