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71. 发明授权

US06751114B2 Method for programming a memory cell 失效
标题翻译：编程存储单元的方法
公开(公告)号：US06751114B2
公开(公告)日：2004-06-15
申请号：US10109088
申请日：2002-03-28
申请人： Terry L. Gilton , John T. Moore
发明人： Terry L. Gilton , John T. Moore
IPC分类号： G11C1700
CPC分类号： G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C2013/0076 , G11C2013/009
摘要： A method for reading and verifying the state of a memory cell during a write operation before writing allows a decision to be made whether to write to the cell or not based on the current state of the cell.
摘要翻译：在写入之前的写入操作期间读取和验证存储器单元的状态的方法允许基于单元的当前状态来决定是否写入单元。

72. 发明授权

US06749715B2 System and method for analyzing a semiconductor surface 失效
标题翻译：用于分析半导体表面的系统和方法
公开(公告)号：US06749715B2
公开(公告)日：2004-06-15
申请号：US09864605
申请日：2001-05-24
申请人： Terry L. Gilton , Troy R. Sorensen
发明人： Terry L. Gilton , Troy R. Sorensen
IPC分类号： C23F100
CPC分类号： G01N1/32 , G01N35/1095
摘要： A method and apparatus for analyzing a semiconductor surface obtains a sample from a localized section of a wafer. The sample is obtained by isolating a section of a wafer with a sampling apparatus, dispensing liquid onto the isolated section of the wafer, dissolving compounds of interest in the liquid, removing a portion of the liquid, and analyzing the liquid and dissolved compounds of interest. The liquid can be an etching solution, an organic solvent, or other suitable solvent. Samples and analyses can, thus, be obtained as a function of position on the wafer. Analyses as a function of depth can also be determined by sampling and analyzing an isolated portion of the wafer as a function of time.
摘要翻译：用于分析半导体表面的方法和装置从晶片的局部截面获得样品。样品是通过用采样设备分离晶片的一部分而获得的，将液体分配到晶片的隔离部分上，将感兴趣的化合物溶解在液体中，除去液体的一部分，以及分析感兴趣的液体和溶解的化合物。液体可以是蚀刻溶液，有机溶剂或其它合适的溶剂。因此，可以根据晶片上的位置获得样品和分析。作为深度的函数的分析也可以通过对晶片的隔离部分进行采样和分析来确定，作为时间的函数。

73. 发明授权

US06727192B2 Methods of metal doping a chalcogenide material 有权
标题翻译：金属掺杂硫族化物材料的方法
公开(公告)号：US06727192B2
公开(公告)日：2004-04-27
申请号：US09797635
申请日：2001-03-01
申请人： John T. Moore , Terry L. Gilton
发明人： John T. Moore , Terry L. Gilton
IPC分类号： H01L21324
CPC分类号： H01L45/04 , H01L27/101 , H01L28/24 , H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1658 , H01L45/1675
摘要： A method of metal doping a chalcogenide material includes forming a metal over a substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through the chalcogenide material to the metal effective to break a chalcogenide bond of the chalcogenide material at an interface of the metal and chalcogenide material and diffuse at least some of the metal outwardly into the chalcogenide material. A method of metal doping a chalcogenide material includes surrounding exposed outer surfaces of a projecting metal mass with chalcogenide material. Irradiating is conducted through the chalcogenide material to the projecting metal mass effective to break a chalcogenide bond of the chalcogenide material at an interface of the projecting metal mass outer surfaces and diffuse at least some of the projecting metal mass outwardly into the chalcogenide material. In certain aspects, the above implementations are incorporated in methods of forming non-volatile resistance variable devices. In one implementation, a non-volatile resistance variable device in a highest resistance state for a given ambient temperature and pressure includes a resistance variable chalcogenide material having metal ions diffused therein. Opposing first and second electrodes are received operatively proximate the resistance variable chalcogenide material. At least one of the electrodes has a conductive projection extending into the resistance variable chalcogenide material.
摘要翻译：金属掺杂硫族化物材料的方法包括在衬底上形成金属。在金属上形成硫族化物材料。通过硫属化物材料对金属进行辐射，有效地在金属和硫族化物材料的界面处破坏硫族化物材料的硫族化物键，并将至少一些金属向外扩散到硫族化物材料中。金属掺杂硫族化物材料的方法包括用硫族化物材料包围突出的金属块的暴露的外表面。通过硫族化物材料将辐射照射到突出金属质量块上，有效地在突出的金属质量外表面的界面处破坏硫族化物材料的硫族化物键，并将至少一些突出的金属块向外扩散到硫族化物材料中。在某些方面，上述实施方式被并入形成非易失性电阻可变器件的方法中。在一个实施方案中，对于给定的环境温度和压力，最高电阻状态的非易失性电阻可变器件包括在其中扩散有金属离子的电阻变化硫属化物材料。反向的第一和第二电极在电阻可变硫属化物材料上可操作地接收。至少一个电极具有延伸到电阻可变硫族化物材料中的导电突起。

74. 发明授权

US06620640B2 Method of making field emitters 失效
公开(公告)号：US06620640B2
公开(公告)日：2003-09-16
申请号：US10156284
申请日：2002-05-28
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： H01L21306
CPC分类号： H01J9/025 , H01J2201/30403 , H01J2209/0226
摘要： A process is provided for forming sharp asperities useful as field emitters. The process comprises patterning and doping a silicon substrate. The doped silicon substrate is anodized. The anodized area is then used for field emission tips. The process of the present invention is also useful for low temperature sharpening of tips fabricated by other methods. The tips are anodized, and then exposed to radiant energy and the resulting oxide is removed.

75. 发明授权

US06576561B2 Gas assisted method for applying resist stripper and gas-resist stripper combinations 有权
公开(公告)号：US06576561B2
公开(公告)日：2003-06-10
申请号：US10165261
申请日：2002-06-06
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： H01L21302
CPC分类号： H01L21/6715 , G03F7/423 , G03F7/427 , H01L21/02054 , H01L21/31133 , H01L21/6708 , Y10S438/948
摘要： A method for moving resist stripper across the surface of a semiconductor substrate. The method includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor substrate. A carrier fluid, such as a gas, is then directed toward the semiconductor substrate so as to move the resist stripper across the substrate. The carrier fluid may be directed toward the substrate as the resist stripper is being applied thereto or following application of the resist stripper. A system for effecting the method is also disclosed.

76. 发明授权

US06489235B2 Method of forming a metal seed layer for subsequent plating 有权
标题翻译：形成后续镀覆金属种子层的方法
公开(公告)号：US06489235B2
公开(公告)日：2002-12-03
申请号：US09753548
申请日：2001-01-04
申请人： Terry L. Gilton , Dinesh Chopra
发明人： Terry L. Gilton , Dinesh Chopra
IPC分类号： H01L214763
CPC分类号： H01L21/76874 , H01L21/76843 , H01L21/76873 , H01L2221/1089
摘要： A method of forming a metal seed layer, preferably a copper layer, for subsequent electrochemical deposition. The metal seed layer is formed by the oxidation-reduction reaction of a metal salt with a reducing agent present in a layer on the substrate to be plated. Metal interconnects for semiconductor devices may be produced by the method, which has the advantage of forming the metal seed layer by a simple electrochemical plating process that may be combined with the plating of the interconnect itself as a single-bath operation.
摘要翻译：形成用于随后的电化学沉积的金属种子层，优选铜层的方法。金属种子层通过金属盐与存在于被镀基板上的层中的还原剂的氧化还原反应而形成。用于半导体器件的金属互连可以通过该方法制造，该方法具有通过简单的电化学电镀工艺形成金属种子层的优点，该电镀方法可以与互连本身的电镀作为单浴操作组合。

77. 发明授权

US06420275B1 System and method for analyzing a semiconductor surface 有权
标题翻译：用于分析半导体表面的系统和方法
公开(公告)号：US06420275B1
公开(公告)日：2002-07-16
申请号：US09386124
申请日：1999-08-30
申请人： Terry L. Gilton , Troy R. Sorensen
发明人： Terry L. Gilton , Troy R. Sorensen
IPC分类号： H01L21302
CPC分类号： G01N1/32 , G01N35/1095
摘要： A method and apparatus for analyzing a semiconductor surface obtains a sample from a localized section of a wafer. The sample is obtained by isolating a section of a wafer with a sampling apparatus, dispensing liquid onto the isolated section of the wafer, dissolving compounds of interest in the liquid, removing a portion of the liquid, and analyzing the liquid and dissolved compounds of interest. The liquid can be an etching solution, an organic solvent, or other suitable solvent. Samples and analyses can, thus, be obtained as a function of position on the wafer. Analyses as a function of depth can also be determined by sampling and analyzing an isolated portion of the wafer as a function of time.
摘要翻译：用于分析半导体表面的方法和装置从晶片的局部截面获得样品。样品是通过用采样设备分离晶片的一部分而获得的，将液体分配到晶片的隔离部分上，将感兴趣的化合物溶解在液体中，除去液体的一部分，以及分析感兴趣的液体和溶解的化合物。液体可以是蚀刻溶液，有机溶剂或其它合适的溶剂。因此，可以根据晶片上的位置获得样品和分析。作为深度的函数的分析也可以通过对晶片的隔离部分进行采样和分析来确定，作为时间的函数。

78. 发明授权

US06221763B1 Method of forming a metal seed layer for subsequent plating 有权
公开(公告)号：US06221763B1
公开(公告)日：2001-04-24
申请号：US09285668
申请日：1999-04-05
申请人： Terry L. Gilton , Dinesh Chopra
发明人： Terry L. Gilton , Dinesh Chopra
IPC分类号： H01L214763
CPC分类号： H01L21/76874 , H01L21/76843 , H01L21/76873 , H01L2221/1089
摘要： A method of forming a metal seed layer, preferably a copper layer, for subsequent electrochemical deposition. The metal seed layer is formed by the oxidation-reduction reaction of a metal salt with a reducing agent present in a layer on the substrate to be plated. Metal interconnects for semiconductor devices may be produced by the method, which has the advantage of forming the metal seed layer by a simple electrochemical plating process that may be combined with the plating of the interconnect itself as a single-bath operation.

79. 发明授权

US06194326B1 Low temperature rinse of etching agents 有权
标题翻译：低温冲洗蚀刻剂
公开(公告)号：US06194326B1
公开(公告)日：2001-02-27
申请号：US09544721
申请日：2000-04-06
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： H01L213063
CPC分类号： H01L21/02063
摘要： A wafer cleaning process is disclosed for quenching etch reactions while rinsing etch reactants and etch products from the wafer. Holes are etched through an insulating layer by reactive ion etch, for example. The holes might comprise contact openings over a semiconductor substrate, or vias through insulating layers between metal lines. An organic or polymer residue left in the holes is cleaned by a wet process. The cleaning process continues to attack sidewalls of the holes, undesirably widening them. The wafer is therefore rinsed with a rinse agent below 0° C., thermally quenching further etching of the sidewalls and affording greater control over the hole dimensions. At the same time, the rinse agent allows relatively rapid diffusion of etchants and etch products from narrow and deep openings. An exemplary rinse agent for such low temperature rinsing is dilute ethylene glycol (C2H6O2).
摘要翻译：公开了用于淬火蚀刻反应同时冲洗蚀刻反应物并从晶片蚀刻产物的晶片清洁工艺。例如，通过反应离子蚀刻将孔蚀刻通过绝缘层。这些孔可以包括半导体衬底上的接触开口，或通过金属线之间的绝缘层的通孔。留在孔中的有机或聚合物残留物通过湿法清洗。清洁过程继续攻击孔的侧壁，不期望地使它们变宽。因此，晶片由冲洗剂在0℃以下漂洗，热淬火进一步蚀刻侧壁并提供对孔尺寸的更大控制。同时，冲洗剂允许蚀刻剂和蚀刻产物从狭窄和深度开口的相对快速的扩散。用于这种低温冲洗的示例性漂洗剂是稀乙二醇（C 2 H 6 O 2）。

80. 发明授权

US06177361B1 In-situ formation of metal oxide and ferroelectric oxide films 失效
标题翻译：金属氧化物和铁电氧化物膜的原位形成
公开(公告)号：US06177361B1
公开(公告)日：2001-01-23
申请号：US08862194
申请日：1997-05-23
申请人： Terry L. Gilton
发明人： Terry L. Gilton
IPC分类号： H01L21469
CPC分类号： H01L21/67069 , H01L21/31683 , H01L21/31691 , H01L21/32139 , H01L28/55
摘要： A method of in-situ formation of ferroelectric films including the steps of: forming a starting layer of metal on top of an oxide layer, wherein the metal for the starting layer is capable of forming a ferroelectric material by reducing the underlying oxide layer. Further incorporating into the starting layer at least a second metal capable of being oxidized by the products of the reduction of the oxide layer by the first metal, forming a layer containing a plurality of metals; and heating the plurality of metals layer in the presence of nitrogen.
摘要翻译：一种铁电薄膜的原位形成方法，包括以下步骤：在氧化物层的顶部形成金属起始层，其中起始层的金属能够通过还原下面的氧化物层形成铁电材料。进一步在起始层中并入能够被第一金属还原氧化物层的产物氧化的至少第二金属，形成含有多种金属的层; 并在氮气存在下加热多个金属层。

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