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71. 发明授权

US08827812B2 Game device, game device control method, program, and information storage medium 有权
标题翻译：游戏装置，游戏装置控制方法，程序和信息存储介质
公开(公告)号：US08827812B2
公开(公告)日：2014-09-09
申请号：US13131088
申请日：2009-06-18
申请人： Hitoshi Otomo , Takeshi Okubo , Yoshinori Shiigi , Motoki Kanematsu , Takashi Onishi , Kenichi Akiyama
发明人： Hitoshi Otomo , Takeshi Okubo , Yoshinori Shiigi , Motoki Kanematsu , Takashi Onishi , Kenichi Akiyama
IPC分类号： A63F9/24 , A63F13/00 , G06F17/00 , G06F19/00 , A63F13/12 , A63F13/10
CPC分类号： A63F13/828 , A63F13/10 , A63F13/12 , A63F13/795 , A63F13/812 , A63F2300/6045 , A63F2300/64 , A63F2300/6661 , A63F2300/8011
摘要： To provide a game device that is capable, in a match in which a player character group including operating characters of a plurality of game players and one or more teammate character competes with an opponent character or an opponent character group opposing the player character group, of improving diversity of combination of the characters belonging to the player character group while suppressing increase of data amount. An operating character obtaining unit (30) obtains the player data on an operating player of each game player. A teammate character obtaining unit (32) obtains the player data on a teammate player of each game player. A game execution unit (36) carries out a game in which an operating team takes part in a soccer match with an opponent team, based on the player data on the respective operating players and that on the respective teammate players.
摘要翻译：为了提供一种游戏装置，能够在包括多个游戏玩家的操作人物和一个或多个队友角色的玩家角色组与对手角色或与玩家角色组相对的对手角色组竞争的比赛中，提高属于播放器角色组的角色的组合的多样性，同时抑制数据量的增加。操作字符获取单元（30）获取每个游戏者的操作玩家的玩家数据。队友角色获取单元（32）获得每个游戏者的同伴玩家的玩家数据。游戏执行单元（36）根据各运营玩家的玩家数据和各队友玩家进行与对手队的足球比赛的运动队伍的游戏。

72. 发明授权

US08803411B2 Charged particle beam radiation apparatus 有权
标题翻译：带电粒子束辐射装置
公开(公告)号：US08803411B2
公开(公告)日：2014-08-12
申请号：US13812700
申请日：2011-06-15
申请人： Shunichi Watanabe , Takashi Onishi , Minoru Kaneda , Hisaya Murakoshi
发明人： Shunichi Watanabe , Takashi Onishi , Minoru Kaneda , Hisaya Murakoshi
IPC分类号： H01J29/84 , H01J29/48 , H01J3/40 , H01J3/02 , H01J37/02
CPC分类号： H01J29/484 , H01J3/02 , H01J3/027 , H01J3/40 , H01J29/488 , H01J37/026 , H01J37/073 , H01J37/248 , H01J2237/038 , H01J2237/06341 , H01J2237/0802
摘要： In an accelerating tube which uses a conductive insulator, there is a possibility that the dopant concentration on a surface of the conductive insulator becomes non-uniform so that the surface resistance of the conductive insulator becomes non-uniform. Accordingly, a circumferential groove is formed on the inner surface of the conductive insulator accelerating tube in plural stages, and metal is metalized along inner portions of the grooves. When the resistance of a specific portion on the surface of the accelerating tube differs from the resistance of an area around the specific portion, the potential of the metalized region on the inner surface of the accelerating tube becomes a fixed value and hence, the potential distribution on the inner surface of the accelerating tube in the vertical direction can be maintained substantially equal without regard to the circumferential direction.
摘要翻译：在使用导电绝缘体的加速管中，导电绝缘体的表面上的掺杂剂浓度有可能变得不均匀，使得导电绝缘体的表面电阻变得不均匀。因此，在导电绝缘体加速管的内表面上形成有多个周向槽，并且金属沿着槽的内部被金属化。当加速管表面上的特定部分的电阻与特定部分周围的区域的电阻不同时，加速管内表面上的金属化区域的电位变为固定值，因此电位分布在加速管的内表面上，在垂直方向上可以保持基本上相等于圆周方向。

73. 发明授权

US08763374B2 Exhaust gas treatment device for diesel engine 有权
标题翻译：柴油机废气处理装置
公开(公告)号：US08763374B2
公开(公告)日：2014-07-01
申请号：US13580686
申请日：2011-03-16
申请人： Takashi Onishi , Keita Naito , Toshio Nakahira , Yoshikazu Takemoto
发明人： Takashi Onishi , Keita Naito , Toshio Nakahira , Yoshikazu Takemoto
IPC分类号： F01N3/00
CPC分类号： F02M27/02 , B01D53/944 , F01N3/025 , F01N3/035 , F01N3/105 , F01N3/36 , F01N9/002 , F01N13/0097 , F01N2240/14 , F01N2610/08 , F01N2610/10 , F02B3/06 , F23G7/065 , Y02E20/12 , Y02T10/16 , Y02T10/47
摘要： An exhaust gas treatment device for a diesel engine capable of starting the generation of a combustible gas is provided. The device includes a combustible gas generator. A core member is fitted in the center portion of an annular wall to form an air-fuel mixing chamber between the inner peripheral surface of the annular wall and the outer peripheral surface of the core member. An air-fuel mixture gas in the air-fuel mixing chamber is adapted to be supplied from the end of the air-fuel mixing chamber to a combustible gas generating catalyst to a portion near the center thereof. A heater is used as the core member. The heat dissipating outer peripheral surface of the heater is exposed to the air-fuel mixing chamber. Heat is dissipated directly from the heat dissipating outer peripheral surface of the heater to the air-fuel mixing chamber when starting the generation of the combustible gas.
摘要翻译：提供了能够开始产生可燃性气体的柴油机废气处理装置。该装置包括可燃气体发生器。芯构件安装在环形壁的中心部分，以在环形壁的内周表面和芯构件的外周表面之间形成空气 - 燃料混合室。空气 - 燃料混合室中的空气 - 燃料混合气体适于从空气 - 燃料混合室的端部供应到可燃气体发生催化剂到其中心附近的部分。加热器用作核心部件。加热器的散热外周面暴露于空气 - 燃料混合室。当开始产生可燃气体时，热量从加热器的散热外周表面直接耗散到空气 - 燃料混合室。

74. 发明授权

US08669535B2 Electron gun 有权
标题翻译：电子枪
公开(公告)号：US08669535B2
公开(公告)日：2014-03-11
申请号：US13322025
申请日：2010-04-14
申请人： Mikio Ichihashi , Takashi Onishi , Shunichi Watanabe , Keiji Tamura
发明人： Mikio Ichihashi , Takashi Onishi , Shunichi Watanabe , Keiji Tamura
IPC分类号： H01J1/50
CPC分类号： H01J37/063 , H01J37/073 , H01J37/141 , H01J2237/06316 , H01J2237/06341 , H01J2237/065 , H01J2237/26
摘要： The present invention has an object to provide a cold cathode field-emission electron gun with low aberration, to thereby provide a high-brightness electron gun even in the case of a large current. The present invention provides a field-emission electron gun which extracts an electron beam from a cathode and converges the extracted electron beam, the field-emission electron gun including: a magnetic field lens which is provided such that the cathode is disposed inside of a magnetic field of the lens; and an extraction electrode for extracting electrons from the cathode, the extraction electrode being formed into a cylindrical shape without an aperture structure. The present invention can provide an electron gun having a function of converging an electron beam using a magnetic field, the electron gun which is capable of reducing an incidental electrostatic lens action and has small aberration and high brightness.
摘要翻译：本发明的目的是提供一种具有低像差的冷阴极场致发射电子枪，从而即使在大电流的情况下也提供高亮度电子枪。本发明提供一种场致发射电子枪，其从阴极提取电子束并使所提取的电子束会聚，该场发射电子枪包括：磁场透镜，其被设置为使得阴极设置在磁性镜头领域; 以及用于从阴极提取电子的引出电极，所述引出电极形成为没有孔结构的圆筒形状。本发明可以提供一种电子枪，其具有使用磁场会聚电子束的功能，该电子枪能够减少偶然的静电透镜作用并且具有小的像差和高亮度。

75. 发明授权

US08382916B2 Method for production of steel product with outstanding descalability; and steel wire with outstanding descalability 有权
标题翻译：具有优异的除鳞性能的钢制品生产方法; 钢丝具有优异的除鳞性能
公开(公告)号：US08382916B2
公开(公告)日：2013-02-26
申请号：US12795109
申请日：2010-06-07
申请人： Takeshi Kuroda , Hidenori Sakai , Mikako Takeda , Takuya Kochi , Takashi Onishi , Tomotada Maruo , Takaaki Minamida
发明人： Takeshi Kuroda , Hidenori Sakai , Mikako Takeda , Takuya Kochi , Takashi Onishi , Tomotada Maruo , Takaaki Minamida
IPC分类号： C23C8/18
CPC分类号： B21B45/00 , C21D8/06 , C21D9/52 , C22C38/02 , C22C38/04
摘要： The present invention aims at providing a method for production of a steel product which surely retains scale during cooling, storage, and transportation and permits scale to scale off easily at the time of mechanical descaling and pickling that precede the secondary fabrication. The steel product is produced by heating and hot rolling a steel billet and spraying the hot-rolled steel product with steam and/or water mist having a particle diameter no larger than 100 μm, for surface oxidation.
摘要翻译：本发明的目的在于提供一种钢制品的生产方法，其在冷却，储存和运输过程中确保保持垢，并且允许在二次加工之前的机械除锈和酸洗时容易地缩放垢。钢产品通过对钢坯进行加热和热轧而制造，并且对具有不大于100μm的粒径的蒸汽和/或水雾喷射热轧钢产品进行表面氧化。

76. 发明申请

US20110147753A1 DISPLAY DEVICE, COPPER ALLOY FILM FOR USE THEREIN, AND COPPER ALLOY SPUTTERING TARGET 审中-公开
标题翻译：显示器件，铜合金膜及铜合金溅射靶
公开(公告)号：US20110147753A1
公开(公告)日：2011-06-23
申请号：US13056444
申请日：2009-08-14
申请人： Takashi Onishi , Aya Miki , Hiroshi Goto , Masao Mizuno , Hirotaka Ito , Katsufumi Tomihisa
发明人： Takashi Onishi , Aya Miki , Hiroshi Goto , Masao Mizuno , Hirotaka Ito , Katsufumi Tomihisa
IPC分类号： H01L29/04 , B32B17/06
CPC分类号： H01L23/53233 , C22C9/00 , C22C9/01 , H01L27/124 , H01L2924/0002 , Y10T428/265 , H01L2924/00
摘要： Disclosed is a Cu alloy film for a display device that has high adhesion to a glass substrate while maintaining a low electric resistance characteristic of Cu-based materials. The Cu alloy film is wiring in direct contact with a glass substrate on a board and contains 0.1 to 10.0 atomic % in total of one or more elements selected from the group consisting of Ti, Al, and Mg. Also disclosed is a display device comprising a thin-film transistor that comprises the Cu alloy film. In a preferred embodiment of the display device, the thin-film transistor has a bottom gate-type structure, and a gate electrode and scanning lines in the thin-film transistor comprise the Cu alloy film and are in direct contact with the glass substrate.
摘要翻译：公开了一种用于显示装置的Cu合金膜，其在保持Cu基材料的低电阻特性的同时对玻璃基板具有高粘附性。 Cu合金膜是与板上的玻璃基板直接接触的布线，并且含有0.1〜10.0原子％的一种以上选自Ti，Al，Mg的元素。还公开了包括包含Cu合金膜的薄膜晶体管的显示装置。在显示装置的优选实施例中，薄膜晶体管具有底栅型结构，并且薄膜晶体管中的栅电极和扫描线包括Cu合金膜并与玻璃基板直接接触。

77. 发明申请

US20110121459A1 SEMICONDUCTOR INTERCONNECTION 审中-公开
公开(公告)号：US20110121459A1
公开(公告)日：2011-05-26
申请号：US13003181
申请日：2009-07-10
申请人： Takashi Onishi , Masao Mizuno , Hirotaka Ito , Kazuyuki Kohama , Kazuhiro Ito , Susumu Tsukimoto , Masanori Murakami
发明人： Takashi Onishi , Masao Mizuno , Hirotaka Ito , Kazuyuki Kohama , Kazuhiro Ito , Susumu Tsukimoto , Masanori Murakami
IPC分类号： H01L23/535
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/76867 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor interconnection wherein a barrier layer different from a TiO2 layer is formed on an interface between an insulating film and a Cu interconnection without increasing electrical resistivity of the Cu interconnection. In the semiconductor interconnection, a Cu interconnection containing Ti is embedded in a trench arranged on an insulating film on the semiconductor substrate, and a TiC layer is formed between the insulating film and the Cu interconnection. The insulating film is preferably composed of SiCO or SiCN. The thickness of the TiC layer is preferably 3-30 nm.
摘要翻译：提供了一种半导体互连，其中在绝缘膜和Cu互连之间的界面上形成不同于TiO 2层的阻挡层，而不增加Cu互连的电阻率。在半导体互连中，包含Ti的Cu互连嵌入设置在半导体衬底上的绝缘膜上的沟槽中，并且在绝缘膜和Cu互连之间形成TiC层。绝缘膜优选由SiCO或SiCN构成。 TiC层的厚度优选为3-30nm。

78. 发明申请

US20100012935A1 CU ALLOY WIRING FILM, TFT ELEMENT FOR FLAT-PANEL DISPLAY USING THE CU ALLOY WIRING FILM, AND CU ALLOY SPUTTERING TARGET FOR DEPOSITING THE CU ALLOY WIRING FILM 有权
标题翻译： CU合金线，用于使用铜合金线的平板显示器的TFT元件和用于沉积铜合金接线的CU合金溅射靶
公开(公告)号：US20100012935A1
公开(公告)日：2010-01-21
申请号：US12517362
申请日：2007-12-04
申请人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
发明人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
IPC分类号： H01L29/786 , H01L23/48 , C23C14/34
CPC分类号： H01L21/32051 , C22C9/00 , C22C9/06 , C23C14/3414 , G02F2001/136295 , G02F2202/28 , H01B1/026 , H01L23/53233 , H01L27/124 , H01L29/4908 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film.The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.
摘要翻译：本发明的目的是提供：可以使用具有低电阻率的Cu作为布线材料的Cu合金布线膜，对玻璃基板表现出高粘合性，并且避免了从玻璃基板剥离的危险玻璃基板; 用Cu合金布线膜制造的平板显示器用TFT元件; 以及用于沉积Cu合金布线膜的Cu合金溅射靶。本发明是构成用于平板显示器的TFT元件1和用于沉积膜的溅射靶的布线膜2，并且该材料包括Cu作为主要成分和至少一种选自以下的元素： Pt，Ir，Pd和Sm总计为0.01〜0.5原子％。布线膜2层叠在玻璃基板3上，另外，在其间插入有绝缘膜4，并且层叠透明导电膜5。

79. 发明授权

US07335596B2 Method for fabricating copper-based interconnections for semiconductor device 失效
标题翻译：制造半导体器件铜基互连的方法
公开(公告)号：US07335596B2
公开(公告)日：2008-02-26
申请号：US11157862
申请日：2005-06-22
申请人： Takashi Onishi , Tatsuya Yasunaga , Hideo Fujii , Tetsuya Yoshikawa , Jun Munemasa
发明人： Takashi Onishi , Tatsuya Yasunaga , Hideo Fujii , Tetsuya Yoshikawa , Jun Munemasa
IPC分类号： H01L21/44
CPC分类号： H01L21/2855 , H01L21/76882
摘要： Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of −20° C. to 0° C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.
摘要翻译：在半导体器件中通过溅射在电介质膜上沉积Cu或Cu合金薄膜来形成Cu基互连，所述电介质膜具有至少一个沟槽和/或通孔至少一个沟槽并且布置在衬底上或上方，进行高温高压处理，从而将Cu或Cu合金嵌入沟槽和/或通孔中，在基板温度为-20℃〜0℃下进行溅射，作为溅射气体，含有比例为5:95至20:80的氢气和惰性气体的气体混合物。

80. 发明申请

US20080014743A1 METHOD OF FABRICATING SEMICONDUCTOR INTERCONNECTIONS 失效
标题翻译：制造半导体互连的方法
公开(公告)号：US20080014743A1
公开(公告)日：2008-01-17
申请号：US11765006
申请日：2007-06-19
申请人： Takashi Onishi , Mikako Takeda , Masao Mizuno , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
发明人： Takashi Onishi , Mikako Takeda , Masao Mizuno , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/76864 , H01L21/76867
摘要： A method of fabricating semiconductor interconnections is provided which can form a Ti-rich layer as a barrier layer and which can embed pure Cu material as interconnection material into every corner of grooves provided in an insulating film even when the grooves have a narrow minimum width and are deep. The method may include the steps of forming one or more grooves in an insulating film on a semiconductor substrate, the recess having a minimum width of 0.15 μm or less and a ratio of a depth of the groove to the minimum width thereof (depth/minimum width) of 1 or more, forming a Cu alloy thin film containing 0.5 to 10 atomic % of Ti in the groove of the insulated film along a shape of the groove in a thickness of 10 to 50 nm, forming a pure Cu thin film in the groove with the Cu alloy thin film attached thereto, and annealing the substrate with the films at 350° C. or more to allow the Ti to be precipitated between the insulating film and the Cu alloy thin film.
摘要翻译：提供一种制造半导体互连的方法，其可以形成富Ti层作为阻挡层，并且即使当沟槽具有窄的最小宽度时，也可以将纯Cu材料作为互连材料嵌入设置在绝缘膜中的沟槽的每个角落，并且很深该方法可以包括以下步骤：在半导体衬底上的绝缘膜中形成一个或多个凹槽，凹槽具有0.15μm或更小的最小宽度以及凹槽的深度与其最小宽度的比（深度/最小值宽度）为1以上，沿着形状为10〜50nm的槽的形状，在绝缘膜的槽内形成含有0.5〜10原子％的Ti的Cu合金薄膜，形成纯Cu薄膜与Cu合金薄膜连接的槽，并使膜在350℃以上退火，使Ti在绝缘膜与Cu合金薄膜之间析出。

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