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71. 发明申请

US20070019694A1 Laser module having controlled optical power density at exposed surfaces 有权
标题翻译：激光模块在暴露表面具有受控的光功率密度
公开(公告)号：US20070019694A1
公开(公告)日：2007-01-25
申请号：US11489545
申请日：2006-07-20
申请人： Hideo Miura
发明人： Hideo Miura
IPC分类号： H01S5/00
CPC分类号： G02B6/3821 , G02B6/4204 , G02B6/4249 , H01S5/02284 , H01S5/32341 , H01S5/4012 , H01S5/4025
摘要： A laser module includes: one or more semiconductor laser elements which emit one or more laser beams; an optical fiber which has a light-entrance end face; and an optical condensing system which is constituted by one or more optical components and makes the one or more laser beams converge at the light-entrance end face of the optical fiber. In the laser module, at least one of one or more light-entrance surfaces and one or more light-output surfaces of the one or more optical components is exposed to air, and the one or more laser beams realize an optical power density of 15 W/mm2 or lower, or 60 to 800 W/mm2 at the at least one of the one or more light-entrance surfaces and the one or more light-output surfaces.
摘要翻译：激光模块包括：发射一个或多个激光束的一个或多个半导体激光元件; 具有光入射端面的光纤; 以及由一个或多个光学部件构成并使一个或多个激光束会聚在光纤的光入射端面的光聚光系统。在激光模块中，一个或多个光学部件的一个或多个光入射表面和一个或多个光输出表面中的至少一个暴露于空气中，并且一个或多个激光束实现15的光功率密度一个或多个光入射表面中的至少一个上的W / mm 2或更低，或60至800W / mm 2，输出面。

72. 发明申请

US20060251144A1 Laser module having detachable transparent member covering light-output window 有权
公开(公告)号：US20060251144A1
公开(公告)日：2006-11-09
申请号：US11393836
申请日：2006-03-31
申请人： Kazuhiko Nagano , Shinichiro Sonoda , Masami Hatori , Hideo Miura , Shinichi Shimotsu
发明人： Kazuhiko Nagano , Shinichiro Sonoda , Masami Hatori , Hideo Miura , Shinichi Shimotsu
IPC分类号： H01S3/08
CPC分类号： G02B6/4296 , G02B6/4204 , G02B6/4292 , H01S5/02212 , H01S5/0222 , H01S5/02284 , H01S5/32341 , H01S5/4012
摘要： A laser module includes: a chassis having a light-output window from which one or more laser beams are outputted; a hermetically sealed package which is fixed to the chassis; one or more semiconductor laser elements which are arranged in the hermetically sealed package, and emit the one or more laser beams; a transparent member which is arranged to cover the light-output window; an optical fiber which has a light-entrance end face, and is arranged outside the chassis so that the light-entrance end face is in contact with the transparent member; and an optical condensing system which is arranged inside the chassis, and makes the one or more laser beams pass through the transparent member and be condensed on the light-entrance end face. The transparent member and the optical fiber are detachably attached to the chassis.

73. 发明申请

US20060183324A1 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060183324A1
公开(公告)日：2006-08-17
申请号：US11392540
申请日：2006-03-30
申请人： Tomio Iwasaki , Hideo Miura
发明人： Tomio Iwasaki , Hideo Miura
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/76846 , H01L21/76849 , H01L21/7685 , H01L23/53228 , H01L23/53242 , H01L23/53252 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： Provided is a reliable semiconductor device with a layered interconnect structure that may develop no trouble of voids and interconnect breakdowns, in which the layered interconnect structure comprises a conductor film and a neighboring film as so layered on a semiconductor substrate that the neighboring film is contacted with the conductor film. In the device, the materials for the conductor film and the neighboring film are so selected that the difference between the short side, ap, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the short side, an, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|ap−an|/ap}×100=A (%) and the difference between the long side, bp, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the long side, bn, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|bp−bn|/bp}×100=B (%) satisfy an inequality of {A+B×(ap/bp)}
摘要翻译：提供了一种具有层状互连结构的可靠的半导体器件，其可以不产生空隙和互连故障的问题，其中分层互连结构包括导体膜和相邻的膜，如此分层在半导体衬底上，邻近膜与导体膜。在该器件中，用于导体膜和相邻膜的材料被选择成使构成具有最小自由能的平面的矩形单元电池的短边，即< 导体薄膜和构成具有相邻薄膜的最小自由能的平面的矩形单元电池的短边，即_{n x100 = A（％）和构成该矩阵单位单元的长边，b P 之间的差异构成具有相邻膜的最小自由能的平面的矩形单位电池的导体膜和长边的最小自由能的平面{| b＆lt; p＆lt; x100 = B（％）满足{A + Bx（a _{p b＆lt; p＆lt; p＆gt;）} <13。在此，导体膜的扩散被延迟。}}

74. 发明授权

US07038322B2 Multi-chip module 失效
公开(公告)号：US07038322B2
公开(公告)日：2006-05-02
申请号：US10919331
申请日：2004-08-17
申请人： Atsushi Kazama , Akihiro Yaguchi , Hideo Miura , Asao Nishimura
发明人： Atsushi Kazama , Akihiro Yaguchi , Hideo Miura , Asao Nishimura
IPC分类号： H01L21/31
CPC分类号： H01L23/3157 , H01L23/3114 , H01L23/3171 , H01L24/10 , H01L24/13 , H01L24/48 , H01L24/73 , H01L25/0655 , H01L25/105 , H01L2224/05599 , H01L2224/13 , H01L2224/13099 , H01L2224/16 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/85399 , H01L2225/1005 , H01L2924/00014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A multi-chip module has at least two semiconductor chips. Each of the semiconductor chips has chip electrodes of the semiconductor chip, electrically conductive interconnections for electrically connection with the chip electrodes, electrically conductive lands for electrically connection with the interconnections, external terminals placed on the lands, and a stress-relaxation layer intervening between the lands and the semiconductor chip. The semiconductor chips are placed on a mounting board via the external terminals. The stress-relaxation layer of a first semiconductor chip is thicker than the stress-relaxation layer of a second semiconductor chip having a distance from a center thereof to an external terminal positioned at an outermost end portion thereof smaller than that of the first semiconductor chip.

75. 发明授权

US07030493B2 Semiconductor device having layered interconnect structure with a copper or platinum conducting film and a neighboring film 失效
标题翻译：具有与铜或铂导电膜和相邻膜的分层互连结构的半导体器件
公开(公告)号：US07030493B2
公开(公告)日：2006-04-18
申请号：US10878018
申请日：2004-06-29
申请人： Tomio Iwasaki , Hideo Miura
发明人： Tomio Iwasaki , Hideo Miura
IPC分类号： H01L23/52
CPC分类号： H01L23/53238 , H01L21/76846 , H01L21/76849 , H01L21/7685 , H01L23/53228 , H01L23/53242 , H01L23/53252 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： Provided is a reliable semiconductor device with a layered interconnect structure that may develop no trouble of voids and interconnect breakdowns, in which the layered interconnect structure comprises a conductor film and a neighboring film as so layered on a semiconductor substrate that the neighboring film is contacted with the conductor film. In the device, the materials for the conductor film and the neighboring film are so selected that the difference between the short side, ap, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the short side, an, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|ap−an|/ap}×100=A (%) and the difference between the long side, bp, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the long side, bn, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|bp−bn|/bp}×100=B (%) satisfy an inequality of {A+B×(ap/bp)}
摘要翻译：提供了一种具有层状互连结构的可靠的半导体器件，其可以不产生空隙和互连故障的问题，其中分层互连结构包括导体膜和相邻的膜，如此分层在半导体衬底上，邻近膜与导体膜。在该器件中，用于导体膜和相邻膜的材料被选择成使构成具有最小自由能的平面的矩形单元电池的短边，即< 导体薄膜和构成具有相邻薄膜的最小自由能的平面的矩形单元电池的短边，即_{n x100 = A（％）和构成该矩阵单位单元的长边，b P 之间的差异构成具有相邻膜的最小自由能的平面的矩形单位电池的导体膜和长边的最小自由能的平面{| b＆lt; p＆lt; x100 = B（％）满足{A + Bx（a _{p b＆lt; p＆lt; p＆gt;）} <13。在此，导体膜的扩散被延迟。}}

76. 发明申请

US20060034571A1 Laser module with sealed packages having reduced total volume 有权
标题翻译：具有密封包装的激光模块，总体积减小
公开(公告)号：US20060034571A1
公开(公告)日：2006-02-16
申请号：US11197592
申请日：2005-08-05
申请人： Kazuhiko Nagano , Hideo Miura , Shinichiro Sonoda
发明人： Kazuhiko Nagano , Hideo Miura , Shinichiro Sonoda
IPC分类号： G02B6/36
CPC分类号： G02B6/4248 , G02B6/3897 , G02B6/4249 , G02B6/4292
摘要： In a laser module in which laser beams emitted from semiconductor laser elements are collimated by collimator lenses, and condensed by an optical condensing system so that the laser beams converge at a light-entrance end face of an optical fiber. The semiconductor laser elements and the collimator lenses are contained in a hermetically sealed, first package which includes a front wall having a window arranged for passage of the laser beams, and a portion of the optical condensing system and the light-entrance end face are contained in a hermetically sealed, second package which is fixed to the front wall. The cross section of the second package perpendicular to the optical axis of the optical fiber at the light-entrance end face is smaller than the cross section of the first package parallel to the cross section of the second package.
摘要翻译：在从半导体激光元件射出的激光束通过准直透镜准直的激光模块中，通过光聚光系统进行聚光，使得激光束会聚在光纤的光入射端面。半导体激光元件和准直透镜被包含在气密密封的第一封装中，该封装包括具有布置成用于激光束通过的窗口的前壁，并且包含光聚光系统和光入射端面的一部分在密封的第二包装中，其被固定到前壁。在光入射端面处垂直于光纤的光轴的第二封装的横截面小于与第二封装的横截面平行的第一封装的横截面。

77. 发明授权

US06989599B1 Semiconductor device with layered interconnect structure 失效
标题翻译：具有分层互连结构的半导体器件
公开(公告)号：US06989599B1
公开(公告)日：2006-01-24
申请号：US09255856
申请日：1999-02-23
申请人： Tomio Iwasaki , Hideo Miura
发明人： Tomio Iwasaki , Hideo Miura
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/76846 , H01L21/76849 , H01L21/7685 , H01L23/53228 , H01L23/53242 , H01L23/53252 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： A reliable semiconductor device is provided with a layered interconnect structure that may develop no problem of voids and interconnect breakdowns, in which the layered interconnect structure includes a conductor film and a neighboring film so layered on a semiconductor substrate that the neighboring film is in contact with the conductor film. In the device, the materials for the conductor film and the neighboring film are so selected that the difference between the short side, ap, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the short side, an, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|ap−an|/ap}×100=A (%) and the difference between the long side, bp, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the long side, bn, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|bp−bn|/bp}×100=B (%) satisfy an inequality of {A+B×(ap/bp)}
摘要翻译：可靠的半导体器件具有分层互连结构，其不会产生空隙和互连故障的问题，其中分层互连结构包括导体膜和相邻薄膜层叠在半导体衬底上，邻近薄膜与导体膜。在该器件中，用于导体膜和相邻膜的材料被选择成使构成具有最小自由能的平面的矩形单元电池的短边，即< 导体薄膜和构成具有相邻薄膜的最小自由能的平面的矩形单元电池的短边，即_{n x100 = A（％）和构成该矩阵单位单元的长边，b P 之间的差异构成具有相邻膜的最小自由能的平面的矩形单位电池的导体膜和长边的最小自由能的平面{| b＆lt; p＆lt; x100 = B（％）满足{A + Bx（a _{p b＆lt; p＆lt; p＆gt;）} <13。以这种方式，导体膜的扩散被延迟。}}

78. 发明授权

US06982465B2 Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics 有权
标题翻译：具有CMOS场效应晶体管的半导体器件具有改善的漏极电流特性
公开(公告)号：US06982465B2
公开(公告)日：2006-01-03
申请号：US10433786
申请日：2001-12-06
申请人： Yukihiro Kumagai , Hiroyuki Ohta , Fumio Ootsuka , Shuji Ikeda , Takahiro Onai , Hideo Miura , Katsuhiko Ichinose , Toshifumi Takeda
发明人： Yukihiro Kumagai , Hiroyuki Ohta , Fumio Ootsuka , Shuji Ikeda , Takahiro Onai , Hideo Miura , Katsuhiko Ichinose , Toshifumi Takeda
IPC分类号： H01L29/76
CPC分类号： H01L29/7842 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L27/092
摘要： The present invention provides a semiconductor device including n-channel field effect transistors and p-channel field effect transistors all of which have excellent drain current characteristics.In a semiconductor device including an n-channel field effect transistor 10 and a p-channel field effect transistor 30, a stress control film 19 covering a gate electrode 15 of the n-channel field effect transistor 10 undergoes film stress mainly composed of tensile stress. A stress control film 39 covering a gate electrode 15 of the p-channel field effect transistor 30 undergoes film stress mainly caused by compression stress compared to the film 19 of the n-channel field effect transistor 10. Accordingly, drain current is expected to be improved in both the n-channel field effect transistor and the p-channel field effect transistor. Consequently, the characteristics can be generally improved.
摘要翻译：本发明提供一种包括n沟道场效应晶体管和p沟道场效应晶体管的半导体器件，其全部具有优良的漏极电流特性。在包括n沟道场效应晶体管10和p沟道场效应晶体管30的半导体器件中，覆盖n沟道场效应晶体管10的栅电极15的应力控制膜19经受主要由拉伸应力。与n沟道场效应晶体管10的膜19相比，覆盖p沟道场效应晶体管30的栅电极15的应力控制膜39主要由压缩应力引起的膜应力。因此，预期在n沟道场效应晶体管和p沟道场效应晶体管两者中都会改善漏极电流。因此，通常可以提高特性。

79. 发明授权

US06927489B1 Semiconductor device provided with rewiring layer 有权
标题翻译：设有重新布线层的半导体装置
公开(公告)号：US06927489B1
公开(公告)日：2005-08-09
申请号：US09787526
申请日：2000-03-14
申请人： Akihiro Yaguchi , Hideo Miura , Atsushi Kazama , Asao Nishimura
发明人： Akihiro Yaguchi , Hideo Miura , Atsushi Kazama , Asao Nishimura
IPC分类号： H01L23/12 , H01L21/60 , H01L23/31 , H01L23/485 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/10 , H01L23/3114 , H01L24/13 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171 , H01L2224/05541 , H01L2224/05548 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/13 , H01L2224/13006 , H01L2224/13099 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01322 , H01L2924/014 , H01L2924/30105 , H01L2924/207 , H01L2224/05552 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： In a small semiconductor device having external terminals on a semiconductor element and a semiconductor module mounted with the small semiconductor device, disconnection of the external terminals is prevented when a temperature change occurs under the conditions that the semiconductor device is mounted on a printed circuit board. To achieve this a projection is formed on a land which is an external terminal bonding area of the semiconductor device, and a protruded portion of the projection is bonded to the external terminal. An intervening portion of a protective film made of resin material is formed between the lands and semiconductor element.
摘要翻译：在半导体元件上具有外部端子的小半导体器件和安装有小型半导体器件的半导体模块中，在半导体器件安装在印刷电路板上的条件下发生温度变化时，可防止外部端子断开。为了实现这一点，在作为半导体器件的外部端子接合区域的焊盘上形成突起，突起的突出部分接合到外部端子。在平台和半导体元件之间形成由树脂材料构成的保护膜的中间部分。

80. 发明申请

US20050121727A1 Semiconductor device and manufacturing method 失效
标题翻译：半导体器件及制造方法
公开(公告)号：US20050121727A1
公开(公告)日：2005-06-09
申请号：US10496766
申请日：2002-11-11
申请人： Norio Ishitsuka , Yukihiro Kumagai , Hideo Miura , Shuji Ikeda , Toshifumi Takeda , Hiroyuki Ohta
发明人： Norio Ishitsuka , Yukihiro Kumagai , Hideo Miura , Shuji Ikeda , Toshifumi Takeda , Hiroyuki Ohta
IPC分类号： H01L21/76 , H01L21/762 , H01L21/822 , H01L21/8238 , H01L27/04 , H01L27/08 , H01L27/092 , H01L27/10 , H01L29/76 , H01L29/94 , H01L31/113
CPC分类号： H01L29/7846 , H01L21/76224 , H01L21/823807 , H01L21/823878 , H01L29/7842
摘要： The object of the present invention is to provide a semiconductor device comprising an n-type channel field effect transistor and a p-type channel field effect transistor, which has a high degree of reliability and excellent drain current characteristics. The gist of the invention for attaining the object resides in disposing a silicon nitride film to the side wall of a trench for an active region in which the n-type channel field effect transistor is formed and disposing the silicon nitride film only in the direction perpendicular to the channel direction to the sidewall of the trench for the active region of the p-type channel field effect transistor. According to the present invention, a semiconductor device comprising an n-type channel field effect transistor and a p-type channel field effect transistor of excellent current characteristics can be provided.
摘要翻译：本发明的目的是提供一种包括n型沟道场效应晶体管和p型沟道场效应晶体管的半导体器件，其具有高可靠性和优异的漏极电流特性。实现本发明的要点在于，在形成有n型沟道场效应晶体管的有源区的沟槽的侧壁上设置氮化硅膜，仅在垂直方向上设置氮化硅膜到通道方向，到p型沟道场效应晶体管的有源区的沟槽的侧壁。根据本发明，可以提供包括n型沟道场效应晶体管和具有优异电流特性的p型沟道场效应晶体管的半导体器件。

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