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    • 71. 发明授权
    • Apparatus for manufacturing prepreg
    • 预浸料制造装置
    • US06464783B1
    • 2002-10-15
    • US09690816
    • 2000-10-18
    • Ryuichi HamabeHiroshi HaradaNoriaki SugimotoHiroyuki MoriToshihiro YajiYoshinori Matsuzaki
    • Ryuichi HamabeHiroshi HaradaNoriaki SugimotoHiroyuki MoriToshihiro YajiYoshinori Matsuzaki
    • B05C108
    • B29B15/122Y10T156/1798
    • A method for manufacturing a prepreg in which a reinforcing substrate is impregnated with a thermosetting matrix resin. In the method, the reinforcing substrate is moved in a traveling direction. The thermosetting matrix resin is supplied to an outer circumferential surface of a transferring roller. The thermosetting matrix resin which substantially contains no solvent and which is in. a molten state is transferred from the outer circumferential surface of the transferring roller to a first surface of a reinforcing substrate while the reinforcing substrate moves. The thermosetting matrix resin which is transferred to the first surface is forced to permeate through the reinforcing substrate by pressing at least one pressing roller on the thermosetting matrix resin transferred to the first surface while the reinforcing substrate moves. The reinforcing substrate impregnated with the thermosetting matrix resin is heated to semi-cure the thermosetting matrix resin.
    • 一种用热固性基体树脂浸渍增强基材的预浸料坯的制造方法。 在该方法中,增强基板沿行进方向移动。 将热固性基质树脂供给到转印辊的外周面。 基本上不含溶剂并且处于熔融状态的热固性基体树脂在加强基板移动时从转印辊的外周表面转移到增强基板的第一表面。 转移到第一表面的热固性基质树脂通过在加强基材移动时将至少一个加压辊压在转移到第一表面的热固性基体树脂上而被迫渗透通过加强基材。 将浸渍有热固性基体树脂的增强基材加热至半固化热固性基体树脂。
    • 73. 发明授权
    • Method for casting molten metal
    • 浇铸熔融金属的方法
    • US06443219B1
    • 2002-09-03
    • US09367183
    • 1999-08-09
    • Katsuhiro SasaiEiichi TakeuchiHiroshi HaradaHajime HasegawaTakehiko TohKeisuke Fujisaki
    • Katsuhiro SasaiEiichi TakeuchiHiroshi HaradaHajime HasegawaTakehiko TohKeisuke Fujisaki
    • B22D2702
    • B22D11/041B22D11/115B22D11/20Y10T428/12Y10T428/12458Y10T428/12472Y10T428/12576Y10T428/12958Y10T428/12965
    • The present invention provides a continuous casting method in which vibration is given to molten metal by a shifting magnetic field so that the equi-axed crystal ratio can be enhanced and the equi-axed crystals can be made fine without generating surface defects caused by powder trapping. Further, the present invention provides an apparatus to which the continuous casting method is applied. Furthermore the present invention provides a cast slab produced by the above method and apparatus. The method of casting molten metal comprises the following steps: pouring molten metal into a mold and solidifying it in the mold while applying an electromagnetic force, which is generated by an electromagnetic coil arranged in the proximity of a molten metal pool in the mold, upon the molten metal; and vibrating the molten metal, which has been solidified in the mold while being cooled and solidified, by a shifting magnetic field generated by the electromagnetic coil so that the molten metal is accelerated by a high intensity and a low intensity of acceleration in a range not exceeding a predetermined flow velocity when the directional vectors of high acceleration and low acceleration in the same direction or in the opposite direction are combined with each other.
    • 本发明提供了一种连续铸造方法,其中通过移动磁场对熔融金属进行振动,从而可以提高等轴晶体比,并且可以使等轴晶体细化而不产生由粉末捕获引起的表面缺陷 。 此外,本发明提供了一种应用连续铸造方法的装置。 此外,本发明提供了通过上述方法和装置制造的铸造板坯。 铸造熔融金属的方法包括以下步骤:将熔融金属浇注到模具中并将其固化在模具中,同时施加由布置在模具中的熔融金属池附近的电磁线圈产生的电磁力, 熔融金属; 并且通过由电磁线圈产生的移动磁场使已在模具中固化的熔融金属振动,使得熔融金属在不是的范围内以高强度和低强度的加速度加速 当相同方向或相反方向上的高加速度和低加速度的方向矢量彼此组合时,超过预定流速。
    • 76. 发明授权
    • Method of producing an aromatic polyester
    • 芳香族聚酯的制造方法
    • US06201102B1
    • 2001-03-13
    • US09487995
    • 2000-01-20
    • Kazuo HayatsuKoichi MizumotoHiroshi Harada
    • Kazuo HayatsuKoichi MizumotoHiroshi Harada
    • C08F600
    • C08G63/78C08G63/605
    • A method of producing an aromatic polyester by distilling a low-boiling fraction from a polycondensation vessel containing a reaction product obtained by acetylating raw monomers of the aromatic polyester with acetic anhydride, wherein the polycondensation vessel is provided with a partial condenser, and controlling a temperature of the low-boiling fraction distilled from the partial condenser within a range from 80 to 150° C. while the amount of the low-boiling fraction distilled from the partial condenser is within a range from 50% to 90% based on a theoretical recovery amount is provided; and according to this method, adhesion of low-molecular compounds to a partial condenser in the production can be prevented and an improvement in yield of the aromatic polyester and stabilization of product quality can be accomplished.
    • 通过从含有通过乙酸酐将芳族聚酯的原料单体乙酰化而获得的反应产物的缩聚容器中蒸馏低沸点馏分而制备芳族聚酯的方法,其中缩聚容器设置有部分冷凝器,并控制温度 从部分冷凝器中蒸馏出的低沸点馏分在80-150℃的范围内,而从部分冷凝器蒸馏的低沸点馏分的量基于理论回收量在50%至90%的范围内是 提供; 并且根据该方法,可以防止生产中低分子化合物与部分冷凝器的粘附,并且可以实现芳族聚酯的收率提高和产品质量的稳定化。
    • 77. 发明授权
    • Semiconductor integrated circuits having bipolar transistors and
LDD-structured MOSFET
    • 具有双极晶体管和LDD结构的MOSFET的半导体集成电路
    • US5606192A
    • 1997-02-25
    • US662525
    • 1996-06-13
    • Hiroshi Harada
    • Hiroshi Harada
    • H01L21/336H01L21/8249H01L27/06H01L29/49H01L29/78H01L29/76H01L29/94H01L31/062H01L31/113
    • H01L27/0623H01L29/49
    • A semiconductor IC comprises an LDD-MOSFET and a bipolar transistor both formed on a common semiconductor substrate. A gate electrode of the MOSFET has a laminated structure including a polysilicon layer, a tungsten silicide layer and another polysilicon layer consecutively formed. The top polysilicon layer functions for protecting the tungsten silicide layer so that tungsten is not back-sputtered to deposit particulates on a base region of the bipolar transistor during an anisotropic etching step for forming sidewall spacers of the gate electrode. Accordingly, a sputter-etch cleaning step for removing tungsten particulates out of the base region is omitted. A BiCMOS IC having an LDD structure and comprising a bipolar transistor with required performance can be manufactured by a simple process.
    • 半导体IC包括LDD-MOSFET和双极型晶体管,两者都形成在公共半导体衬底上。 MOSFET的栅电极具有包括多晶硅层,硅化钨层和连续形成的另一多晶硅层的层叠结构。 顶部多晶硅层用于保护硅化钨层,使得在用于形成栅电极的侧壁间隔物的各向异性蚀刻步骤期间,钨不会被溅射以在双极晶体管的基极区域上沉积微粒。 因此,省略了从基底区域除去钨微粒的溅射蚀刻清洁步骤。 具有LDD结构并且包括具有所需性能的双极晶体管的BiCMOS IC可以通过简单的工艺制造。
    • 78. 发明授权
    • Vehicle control apparatus
    • 车辆控制装置
    • US5508929A
    • 1996-04-16
    • US185011
    • 1994-01-24
    • Hiroshi Harada
    • Hiroshi Harada
    • B60K28/02B60G17/016B60T8/1755B60T8/1764B62D6/00B62D7/14B62D7/15B62D101/00B62D111/00B62D113/00
    • B60T8/1764B60G17/0163B60T8/1755B62D6/00B62D7/159B60G2400/104B60G2400/204B60G2400/41B60T2270/313
    • A vehicle control apparatus for controlling at least one running condition of a vehicle, including an intended-target-position determining device which determines an intended target position of the vehicle based on a steering angle of the vehicle; a running-state detector which detects a running state of the vehicle; an estimated-target-position determining device which determines an estimated target position of the vehicle based on the running state of the vehicle detected by the running-state detector; a vehicle-condition changing device which changes the at least one running condition of the vehicle; and a vehicle-condition control device which controls the vehicle-condition changing device based on a difference between the intended target position of the vehicle determined by the intended-target-position determining device and the estimated target position of the vehicle determined by the estimated-target-position determining device, thereby controlling the at least one running condition of the vehicle.
    • 一种用于控制车辆的至少一个运行状态的车辆控制装置,包括:目标位置确定装置,其基于车辆的转向角确定车辆的预期目标位置; 运行状态检测器,其检测车辆的行驶状态; 估计目标位置确定装置,其基于由行驶状态检测器检测到的车辆的行驶状态来确定车辆的估计目标位置; 车辆状态改变装置,其改变车辆的至少一个行驶状态; 以及车辆状态控制装置,其基于由预定目标位置确定装置确定的车辆的目标目标位置与由所估计的目标位置确定装置确定的车辆的估计目标位置之间的差异来控制车辆状态改变装置, 目标位置确定装置,从而控制车辆的至少一个行驶状态。