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71. 发明专利

JPH10294529A SEMICONDUCTOR LASER AND ITS MANUFACTURE 失效
公开(公告)号：JPH10294529A
公开(公告)日：1998-11-04
申请号：JP20693797
申请日：1997-07-31
申请人： TOSHIBA CORP
发明人： HATAGOSHI GENICHI , ONOMURA MASAAKI , JOHN LENEY , SUZUKI MARIKO , NUNOGAMI SHINYA , ISHIKAWA MASAYUKI
IPC分类号： H01L29/06 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/20 , H01S5/323 , H01S5/343 , H01S3/18 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To actualize a projection beam of good quality which can be oscillated continuously in basic lateral mode and has no astigmatism suitable for the light source of an optical disk system, etc. SOLUTION: The semiconductor laser is constituted by forming an n type GaAlN clad layer 13, an active layer 16 of MQW(multiquantum well), and a p type GaAlN clad layer 19 on an n type GaN buffer layer 11 on a sapphire substrate 10 and the clad layer 19 is equipped with a double heterostructure part with striped ridges and a light confinement layer formed in an area other than the ridge part of the clad layer 19 on the double heterostructure part. In this case, the refractive index of the light confinement layer is made larger than the refractive index of the p type GaAlN clad layer. Consequently, threshold current density is reduced by controlling a lateral mode by forming a waveguide structure with a refractive index distribution, and in the lateral mode, an InGaAlBN-based semiconductor laser can continuously be oscillated.

72. 发明专利

JPH10275543A GAS BLAST CIRCUIT-BREAKER 失效
公开(公告)号：JPH10275543A
公开(公告)日：1998-10-13
申请号：JP7809697
申请日：1997-03-28
申请人： TOSHIBA CORP
发明人： NIWA YOSHIMITSU , HAYASHI YASUSHI , ISHIKAWA MASAYUKI , SUZUKI KATSUMI
IPC分类号： H01H33/74 , H01H33/91
摘要： PROBLEM TO BE SOLVED: To provide a compact gas blast circuit-breaker, of which insulating performance can be improved to the maximum. SOLUTION: A fixed part 3 and a movable part 2, which can be moved in relation to the fixed part 3, are arranged opposite to each other in a pressure container 1 filled with the insulating gas. The movable part 2 is driven by an operating mechanism through an insulation operating rod 11. An exhaust cylinder 9 of the fixed part 3 is fitted to a metal support 10, and an electrifying contact 6 to be provided in the fixed part 3 is connected to the end of the metal support 10. An arc electrode 7 to be provided in the fixed part 3 is supported by the metal support 10 for fixation so as to be positioned on an axis of the exhaust cylinder 9. The exhaust cylinder 9 is formed by overlapping plural exhaust guides 13, which are formed of plural plate material, with each other for connection so as to form a cylindrical shape as a whole. The exhaust guides 13 are arranged with a constant space in the azimuth direction, and inclined along an expansion line around the axis of the exhaust cylinder 9.

73. 发明专利

JPH10269915A GAS-BLAST CIRCUIT-BREAKER 失效
公开(公告)号：JPH10269915A
公开(公告)日：1998-10-09
申请号：JP7004997
申请日：1997-03-24
申请人： TOSHIBA CORP
发明人： ISHIKAWA MASAYUKI , HAYASHI YASUSHI
IPC分类号： H01H33/915
摘要： PROBLEM TO BE SOLVED: To provide a gas-blast circuit-breaker wherein a pressure rise, generated when a heat gas is discharged, can be relaxed to smoothly discharge the heat gas, and excellent insulation recovery performance can be obtained. SOLUTION: Fixed and movable parts 2 and 1 are provided in a tank 14, filled with an insulating gas such as an SF6 gas; and the fixed part 2 is provided with a fixed side arc contact shoe 6, an current-carrying metal supporter 7, and a shield electrode 8. An exhaust tube, coaxial with the contact shoe 6, is constituted by two layer tubes of outer and inner walls 3 and 4, supported at a constant interval by a metallic supporter 15, to the supporter 7; and a fixed side current-carrying contact shoe 1 is provided on the end part of the exhaust tube. The discharge side for a heat gas of the inner wall 4 is formed shorter than the outer wall 3, also small holes are formed zigzag and uniformly in the azimuth angle direction of the exhaust tube on the outer and inner walls 3 and 4. The area and space factor of the small holes in the exhaust tube are made about 300 m and about 30%.

74. 发明专利

JPH1012104A GAS-BLAST CIRCUIT BREAKER 失效
公开(公告)号：JPH1012104A
公开(公告)日：1998-01-16
申请号：JP16416196
申请日：1996-06-25
申请人： TOSHIBA CORP
发明人： NIWA YOSHIMITSU , ISHIKAWA MASAYUKI , SUZUKI KATSUMI
IPC分类号： H01H33/70 , H01H33/91
摘要： PROBLEM TO BE SOLVED: To provide a gas-blast circuit breaker whose cooling capacity is enhanced by causing a high-temperature arc-extinguishing gas produced between arc contacts to be quickly discharged from a space around a fixed arc contact. SOLUTION: This gas-blast circuit breaker has, at the end of a fixed support 7, a circular opening 8 whose apex is located at the end of a fixed arcing contact 2 in order to discharge hot gas into a wide area of a space around the fixed support 7, and has guide plates 10 in the opening 8 to control the flow of the hot gas. Therefore, the gas-blast circuit breaker has an excellent breaking function with the capabilities of quickly discharging, from the space around the fixed arcing contact, an arc-extinguishing gas heated by an arc produced between the arc contacts 2 and of quickly heating the gas in the space around the fixed support 7.

75. 发明专利

JPH09129929A BLUE LIGHT EMITTING ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH09129929A
公开(公告)日：1997-05-16
申请号：JP23067996
申请日：1996-08-30
申请人： TOSHIBA CORP
发明人： NITTA KOICHI , FUJIMOTO HIDETOSHI , ISHIKAWA MASAYUKI
IPC分类号： H01L21/205 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42 , H01S5/00 , H01S5/323 , H01S5/343 , H01L33/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To eliminate the need of a thermal annealing process from the manufacturing process of a blue light emitting element by naturally cooling first and second gallium nitride semiconductor layers and a gallium nitride semiconductor active layer so as to activate added impurities at ratios higher than specific values after the layers are formed by the thermal CVD method. SOLUTION: In a vacuum chamber, a gallium nitride semiconductor buffer layer 101 is formed by raising the substrate temperature to 1,200 deg.C and an N-type contact layer 102 and N-type clad layer 103 are formed by lowering the temperature to 1,100 deg.C. Then an active layer 104 is formed by lowering the temperature to 600-900 deg.C and a P-type clad layer 105 and P-type contact layer 106 are formed by again raising the temperature to 1,100 deg.C. After the layer 106 is formed, the formed layers are naturally cooled by leaving the layers as they are for 2-3 hours after gas in the chamber is changed to an inert gas from a reaction gas. When the layers are left in such a way, at least 7 or more % of added impurities are activated and the need of a thermal annealing process for activating the impurities as post-treatment can be eliminated.

76. 发明专利

JPH08330628A LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH08330628A
公开(公告)日：1996-12-13
申请号：JP23580295
申请日：1995-09-13
申请人： TOSHIBA CORP
发明人： YAMAMOTO MASAHIRO , FUJIMOTO HIDETOSHI , KOKUBU YOSHIHIRO , ISHIKAWA MASAYUKI , SAITO SHINJI , NISHIKAWA YUKIE , JIYON RENII
IPC分类号： H01L21/203 , H01L21/301 , H01L21/31 , H01L33/06 , H01L33/16 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/02 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/327 , H01L33/00 , H01S3/18
摘要： PURPOSE: To obtain a light-emitting semiconductor element which can be cut without applying an excess force when the element is to be cut by a method wherein a single- crystal substrate and a compound semiconductor layer have respective shapes in polygons and at least one out of interior angles of every polygon has a specific angle. CONSTITUTION: A pattern in a parallel quadrilateral having [one interior angle of (60 deg.±3 deg.)×n] (where [n] represents a natural number) is formed in such a way that one side is overlapped with the direction of a substrate 11, and respective semiconductor layers 13, 14 are etched by making use of the pattern as a mask. After that, one corner part at 60 deg. out of interior angles of the parallel quadrilateral used to from a silicon diode layer 15 is etched, and the surface of a p-type GaN layer 14 is exposed partly. After that, a scribing line is formed, by using a needle-shaped scriber, along the pattern of a parallel quadrilateral for a light-emitting diode 18 formed on the same substrate 11 simultaneously. The substrate is pushed and cut along the line. A force at this time is sufficiently about 1/10 that in conventional cases. Consequently, the substrate can be cut without applying an excess force when it is to be cut.

77. 发明专利

JPH0898402A CIRCUIT BREAKER FOR NEUTRAL PROTECTION 失效
公开(公告)号：JPH0898402A
公开(公告)日：1996-04-12
申请号：JP22818394
申请日：1994-09-22
申请人： KANSAI ELECTRIC POWER CO , SHIKOKU ELEC POWER , ELECTRIC POWER DEV CO , TOSHIBA CORP
发明人： KOSHIZUKA TADASHI , NISHIWAKI SUSUMU , ISHIKAWA MASAYUKI , OHASHI HIROKAZU , TAKEJI NAOAKI , SUGIHARA HIROSHI , SANPEI MASATOSHI
IPC分类号： H01H33/59 , H02H3/00 , H02J1/00
摘要： PURPOSE: To eliminate adverse effect of a capacitor in an oscillation circuit on a DC transmission line by separating the oscillation circuit from a neutral line at the time of normal operation of a system and closing the oscillation circuit at the time of neutral protective operation. CONSTITUTION: A plurality of converters 3 are installed in a converting station in bipolar connection. The + side line 1 is led out from a converter 3 of one polarity through a DC reactor 4 while the -side line 1 is led out from a converter of the other polarity through the DC reactor 4 and two neutral lines 2 are led out from between the poles. An auxiliary circuit breaker 6 is connected, in series, between the ungrounded end of the neutral line 2 and a main circuit breaker 5 connected in parallel with an oscillation circuit 7 and an overvoltage limiter 8. The auxiliary circuit breaker 6 is opened at the time of normal system operation but closed, along with the main circuit breaker 5, upon occurrence of ground fault on the neutral line 2 thus eliminating the adverse effect on a DC transmission line.

78. 发明专利

JPH0888404A PLANE LIGHT EMITTING TYPE SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPH0888404A
公开(公告)日：1996-04-02
申请号：JP24845494
申请日：1994-09-17
申请人： TOSHIBA CORP
发明人： SUGAWARA HIDETO , ISHIKAWA MASAYUKI
IPC分类号： H01L33/06 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01L33/00 , H01S3/18
摘要： PURPOSE: To provide a light emitting diode which makes possible improvement of luminous efficacy in a light emitting portion made of InGaAlP and improvement of luminance. CONSTITUTION: A light emitting diode has an n-GaAs substrate 11, an n-InGaAlP clad layer 12 formed on the substrate 11, a multilayer light emitting layer 13 formed on the clad layer 12, and a p-InGaAlP clad layer 15 formed on the multilayer light emitting layer 13, for leading out a light from the plane opposite to the substrate 11. In this light emitting diode, the multilayer light emitting layer 13 is caused to have a multiple quantum well structure in which a strain quantum well layer 13a having a tensile strain and a strain relaxation barrier layer 13b having a compression strain are stacked.

79. 发明专利

JPH076673A PUFFER TYPE GAS CIRCUIT BREAKER 失效
公开(公告)号：JPH076673A
公开(公告)日：1995-01-10
申请号：JP14963793
申请日：1993-06-21
申请人： TOSHIBA CORP
发明人： HIRANO YOSHIHIKO , INOHARA TOSHIAKI , NAKAMOTO TETSUYA , ISHIKAWA MASAYUKI
IPC分类号： H01H33/70 , H01H33/91
摘要： PURPOSE:To provide a puffer type gas circuit breaker provided with a nozzle of low dielectric constant by promptly diffusing absorbed slight arc energy, and suppressing a decrease of dielectric strength and breaking performance, when exposed in an arc, to a minimum limit. CONSTITUTION:In a puffer type gas circuit breaker provided with a nozzle for extinguishing an arc by puffing arc-extinguishing gas, compressed in a puffer chamber when opened the breaker, to the arc generated between fixed and movable contactors, the nozzle is constituted of amorphous fluororesin 1 containing aluminum fluoride particles 2.

80. 发明专利

JPH06268331A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPH06268331A
公开(公告)日：1994-09-22
申请号：JP5110293
申请日：1993-03-11
申请人： TOSHIBA CORP
发明人： ISHIKAWA MASAYUKI , NISHIKAWA YUKIE , SAITO SHINJI
IPC分类号： H01L33/06 , H01L33/28 , H01L33/30 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PURPOSE:To provide a semiconductor light emitting device employing a II-IV compound semiconductor in which operating voltage or operating current can be decreased. CONSTITUTION:The semiconductor light emitting device comprises a p-type InP substrate 1, a p-type clad layer 2 of Cd1-u-vZnuMgvSe (0

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