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71. 发明申请

US20110175081A1 THIN FILM TRANSISTOR AND DISPLAY 有权
标题翻译：薄膜晶体管和显示器
公开(公告)号：US20110175081A1
公开(公告)日：2011-07-21
申请号：US12809096
申请日：2009-01-30
申请人： Amita Goyal , Naho Itagaki , Tatsuya Iwasaki
发明人： Amita Goyal , Naho Itagaki , Tatsuya Iwasaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C23C14/086
摘要： A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.
摘要翻译：薄膜晶体管包括形成在基板上的栅电极，栅极绝缘层，沟道层，源电极和漏电极，其中：沟道层包含铟，锗和氧; 并且沟道层具有由In /（In + Ge）表示的组成比为0.5以上且0.97以下。

72. 发明授权

US07964871B2 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer 有权
标题翻译：具有非晶氧化物半导体层的薄膜晶体管和薄膜二极管
公开(公告)号：US07964871B2
公开(公告)日：2011-06-21
申请号：US12263157
申请日：2008-10-31
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L29/04
CPC分类号： H01L29/7869
摘要： A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
摘要翻译：一种薄膜晶体管，包括由对可见光透明且具有折射率nx的氧化物半导体形成的沟道层，设置在沟道层的一个面上的栅极绝缘层和设置在另一个面上的透明层的沟道层，折射率为nt，其中nx> nt的关系。一种薄膜晶体管，包括折射率为no的衬底，设置在衬底上的折射率为nt的透明层，以及设置在透明层上并且折射率为nx的沟道层，其中存在 nx> nt> no的关系。

73. 发明授权

US07791082B2 Semiconductor apparatus and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07791082B2
公开(公告)日：2010-09-07
申请号：US11859641
申请日：2007-09-21
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L27/15
CPC分类号： H01L29/7869 , H01L27/3211 , H01L27/3244
摘要： It is an object of the present invention to provide a technology of controlling a threshold voltage of a thin film transistor in which an amorphous oxide film is applied to a channel layer. There is provided a semiconductor apparatus including a plurality of kinds of transistors, each of the plurality of kinds of transistors including a channel layer made of an amorphous oxide containing a plurality of kinds of metal elements; and threshold voltages of the plurality of kinds of transistors are different from one another by changing an element ratio of the amorphous oxide.
摘要翻译：本发明的目的是提供一种控制薄膜晶体管的阈值电压的技术，其中非晶氧化物膜被施加到沟道层。提供了包括多种晶体管的半导体装置，所述多种晶体管中的每一种包括由包含多种金属元素的非晶氧化物制成的沟道层; 并且通过改变非晶氧化物的元素比，多种晶体管的阈值电压彼此不同。

74. 发明申请

US20090174012A1 Field Effect Transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US20090174012A1
公开(公告)日：2009-07-09
申请号：US12097850
申请日：2007-01-11
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/66969
摘要： Provided is a field effect transistor, provided with a gate electrode 15, a source electrode 13, and a drain electrode 14 formed on a substrate, including a channel layer 11 formed of an oxide containing In, Zn, or Sn as the main component, and a gate insulating layer 12 provided between the channel layer 11 and the gate electrode 15, in which the gate insulating layer 12 is formed of an amorphous oxide containing Ga as the main component.
摘要翻译：提供一种场效应晶体管，其设置有形成在基板上的栅电极15，源电极13和漏电极14，其包括由以In，Zn或Sn为主要成分的氧化物形成的沟道层11，以及栅极绝缘层12，其设置在沟道层11和栅极电极15之间，栅极绝缘层12由以Ga为主要成分的非晶氧化物形成。

75. 发明申请

US20090065771A1 FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用氧化硅膜的场效应晶体管及其制造方法
公开(公告)号：US20090065771A1
公开(公告)日：2009-03-12
申请号：US12282000
申请日：2007-08-03
申请人： Tatsuya Iwasaki , Hideya Kumomi
发明人： Tatsuya Iwasaki , Hideya Kumomi
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78618 , H01L29/78621
摘要： The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.
摘要翻译：本发明提供一种场效应晶体管，其包括作为半导体层的氧化膜，其中氧化膜包括加入氢和氘之一的源极部分和漏极部分之一。

76. 发明申请

US20080272370A1 FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：US20080272370A1
公开(公告)日：2008-11-06
申请号：US12167540
申请日：2008-07-03
申请人： Ayanori Endo , Ryo Hayashi , Tatsuya Iwasaki
发明人： Ayanori Endo , Ryo Hayashi , Tatsuya Iwasaki
IPC分类号： H01L21/34 , H01L29/22
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/265 , H01L21/268 , H01L21/3003 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.

77. 发明授权

US07257282B2 Process of information transmission in optical circuit device and optical circuit device therefor 有权
标题翻译：光电路装置及其光电路装置中的信息传输过程
公开(公告)号：US07257282B2
公开(公告)日：2007-08-14
申请号：US10533564
申请日：2003-12-25
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： G02B6/12
CPC分类号： G02B6/43 , H04B10/801
摘要： An information transmission process is disclosed in which information is transmitted between a signal-emitting port for emitting an optical signal and plural signal-receiving ports through a light transmissive medium in an optical circuit device. The process comprises a first step of transmitting a first information from the signal-emitting port by emitting light in a first emission angle range to transmit first information to at least one of the signal-receiving ports, and a second step, after the first step, of transmitting second information from the signal-emitting port by emitting light in a second emission angle range different from the first emission angle range to transmit second information to at least one of the signal-receiving ports.
摘要翻译：公开了一种信息发送处理，其中通过光电路装置中的透光介质，在用于发射光信号的信号发射端口和多个信号接收端口之间传送信息。该过程包括第一步骤，通过在第一发射角度范围内发射光来从信号发射端口发送第一信息，以将第一信息发射到信号接收端口中的至少一个;以及第二步骤，在第一步骤通过发射与第一发射角度范围不同的第二发射角度范围的光来从信号发射端口发送第二信息，以将第二信息发射到信号接收端口中的至少一个。

78. 发明申请

US20070063211A1 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer 有权
标题翻译：具有非晶氧化物半导体层的薄膜晶体管和薄膜二极管
公开(公告)号：US20070063211A1
公开(公告)日：2007-03-22
申请号：US11514190
申请日：2006-09-01
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L33/00
CPC分类号： H01L29/7869
摘要： A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
摘要翻译：一种薄膜晶体管，包括由对可见光透明且具有折射率nx的氧化物半导体形成的沟道层，设置在沟道层的一个面上的栅极绝缘层和设置在另一个面上的透明层的沟道层，折射率为nt，其中nx> nt的关系。一种薄膜晶体管，包括折射率为no的衬底，设置在衬底上的折射率为nt的透明层，以及设置在透明层上并且折射率为nx的沟道层，其中存在 nx> nt> no的关系。

79. 发明授权

US06791463B2 On-board control system and method for vehicles 有权
标题翻译：车载控制系统及方法
公开(公告)号：US06791463B2
公开(公告)日：2004-09-14
申请号：US10151235
申请日：2002-05-21
申请人： Tatsuya Iwasaki , Nobutomo Takagi , Hiroshi Kikukawa
发明人： Tatsuya Iwasaki , Nobutomo Takagi , Hiroshi Kikukawa
IPC分类号： G08B2100
CPC分类号： E05B77/12 , B60R16/03 , E05B81/86 , H02J7/345 , H02J9/061
摘要： In an on-board control system, a body ECU executes various control operations in response to the supply of power voltage from a battery. There is connected on the power line of the battery a voltage holding circuit which is formed of a capacitor so that the variation of battery voltage slows. A switch input circuit samples the on/off states of external switches periodically under control of a microcomputer. The microcomputer determines a fall of battery voltage, causing the switch input circuit to stop sampling of switch states. Stopping the circuit operation and thus reducing the battery load current slows the voltage fall at the occurrence of collision of vehicle, allowing adequate time to store collision data in a collision memory circuit.
摘要翻译：在车载控制系统中，机体ECU响应于来自电池的电源电压的供应而执行各种控制操作。在电池的电源线上连接有由电容器形成的电压保持电路，使得电池电压的变化变慢。开关输入电路在微型计算机的控制下周期性地对外部开关的导通/截止状态进行采样。微型计算机确定电池电压的下降，导致开关输入电路停止采样开关状态。停止电路操作并因此降低电池负载电流会在车辆碰撞发生时减慢电压下降，从而有足够的时间将碰撞数据存储在碰撞存储器电路中。

80. 发明授权

US06752676B2 Methods for producing electron-emitting device, electron source, and image-forming apparatus 失效
标题翻译：用于制造电子发射器件，电子源和图像形成装置的方法
公开(公告)号：US06752676B2
公开(公告)日：2004-06-22
申请号：US09250400
申请日：1999-02-16
申请人： Masataka Yamashita , Hisaaki Kawade , Toshikazu Ohnishi , Tatsuya Iwasaki , Takeo Ono
发明人： Masataka Yamashita , Hisaaki Kawade , Toshikazu Ohnishi , Tatsuya Iwasaki , Takeo Ono
IPC分类号： H01J0902
CPC分类号： H01J9/027 , H01J2201/3165
摘要： A method for producing an electron-emitting device having an electroconductive film with an electron-emitting region extending between plural electrodes, includes a step of forming the electron-emitting region in the electroconductive film, including a step of heating the electroconductive film, and a step of energizing the electroconductive film in an atmosphere in which a gas for promoting cohesion of the electroconductive film exists.
摘要翻译：一种制造具有在多个电极之间延伸的电子发射区的导电膜的电子发射器件的方法包括在导电膜中形成电子发射区的步骤，包括加热导电膜的步骤，以及在导电膜的内聚力气体存在的气氛中赋能导电膜的工序。

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