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71. 发明授权

US08624340B2 Plasma processing apparatus and method thereof 失效
标题翻译：等离子体处理装置及其方法
公开(公告)号：US08624340B2
公开(公告)日：2014-01-07
申请号：US13215276
申请日：2011-08-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
发明人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
IPC分类号： H01L27/14 , H01L21/44
CPC分类号： H01L21/02667 , H05H1/28 , H05H1/34 , H05H1/3405
摘要： In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.
摘要翻译：在等离子体焰炬单元中，形成线圈的铜棒整体设置在形成于石英块中的铜棒插入孔的内部，使得石英块被在铜杆插入孔和冷却水管内流动的水冷却。等离子体喷射口形成在割炬单元的最下部。当气体被供应到细长室内的空间中时，向铜棒供应高频功率以在细长室内的空间中产生等离子体，使得将等离子体施加到基底。

72. 发明申请

US20060169673A1 Plasma processing method and apparatus 失效
公开(公告)号：US20060169673A1
公开(公告)日：2006-08-03
申请号：US11397626
申请日：2006-04-05
申请人： Tomohiro Okumura , Yukihiro Maegawa , Hiroyuki Suzuki , Ichiro Nakayama
发明人： Tomohiro Okumura , Yukihiro Maegawa , Hiroyuki Suzuki , Ichiro Nakayama
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , C23F4/00 , Y02E50/30
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode for supporting a substrate, and an antenna disposed in opposition to the substrate electrode and covered with an insulating antenna cover. A first high-frequency power supplies a high-frequency power of a 30 MHz to 3 GHz frequency to the antenna, and a second high-frequency power supply supplies a high-frequency power of a 100 kHz to 20 MHz. A refrigerant supply unit is provided for supplying a refrigerant flow to the antenna, and an electrically conductive sheet is provided between the antenna and the antenna cover. The electrically conductive sheet has a surface that is parallel to the substrate electrode and is larger than an opposing surface of the antenna.

73. 发明申请

US20050145340A1 Method and apparatus for plasma processing 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20050145340A1
公开(公告)日：2005-07-07
申请号：US11067628
申请日：2005-02-28
申请人： Tomohiro Okumura , Ichiro Nakayama
发明人： Tomohiro Okumura , Ichiro Nakayama
IPC分类号： H01J37/32 , H01L21/306
CPC分类号： H01J37/321
摘要： A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.
摘要翻译：等离子体处理方法包括通过在将真空室内的气体供给到真空室内部的同时排出真空室的内部来将真空室的内部压力控制到规定的压力。在控制真空室内部的压力的同时，将高频功率供给到在另一端开放的第一导体的一端，并被配置为涡流。另外，将第二导体的一端接地，该第二导体在另一端开放，并被构造为涡流。最后，来自第一导体和第二导体的电磁波辐射到真空室中，在真空室中产生等离子体并处理放置在真空室内的电极上的衬底。

74. 发明授权

US06875307B2 Method and apparatus for plasma processing 失效
公开(公告)号：US06875307B2
公开(公告)日：2005-04-05
申请号：US10060350
申请日：2002-02-01
申请人： Tomohiro Okumura , Ichiro Nakayama
发明人： Tomohiro Okumura , Ichiro Nakayama
IPC分类号： H01J37/32 , C23C16/00 , C23F1/00
CPC分类号： H01J37/321
摘要： A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.

75. 发明授权

US5916820A Thin film forming method and apparatus 失效
标题翻译：薄膜形成方法和装置
公开(公告)号：US5916820A
公开(公告)日：1999-06-29
申请号：US518307
申请日：1995-08-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Yuichiro Yamada , Naoki Suzuki
发明人： Tomohiro Okumura , Ichiro Nakayama , Yuichiro Yamada , Naoki Suzuki
IPC分类号： C23C14/34 , C23C16/04 , C23C16/507 , C23C16/509 , H01L21/205 , H01L21/3105 , H01L21/316 , H01L21/00 , H05H1/24
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/507 , C23C16/5096 , H01J37/321 , H01L21/02164 , H01L21/02274 , H01L21/31055 , H01L21/31612 , H01J2237/3327
摘要： A thin film forming method for forming a thin film on a surface of a substrate having a stepped portion due to a difference in level, includes steps of performing first thin film deposition with plasma generated in a processing chamber by applying high-frequency voltages to electrodes, performing thin film shaping with plasma generated in the processing chamber by applying a high-frequency voltage to a coil, and performing second thin film deposition with plasma generated in the processing chamber by applying high-frequency voltages to the electrodes.
摘要翻译：在由于电平差异而在具有阶梯部分的基板的表面上形成薄膜的薄膜形成方法包括以下步骤：通过向电极施加高频电压来在处理室中产生的等离子体进行第一薄膜沉积通过向线圈施加高频电压来对处理室中产生的等离子体进行薄膜成形，并且通过向电极施加高频电压来对处理室中产生的等离子体进行第二薄膜沉积。

76. 发明授权

US09105803B2 Polycrystalline-type solar cell panel and process for production thereof 有权
标题翻译：多晶型太阳能电池板及其制造方法
公开(公告)号：US09105803B2
公开(公告)日：2015-08-11
申请号：US13635962
申请日：2011-06-17
申请人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ohido , Nobuyuki Kamikihara , Tomohiro Okumura
发明人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ohido , Nobuyuki Kamikihara , Tomohiro Okumura
IPC分类号： H01L31/18 , H01L31/0368
CPC分类号： H01L31/182 , H01L31/03682 , Y02E10/546 , Y02P70/521
摘要： Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.
摘要翻译：公开了通过以简单的方式形成具有PN结的多晶硅膜，可以以低成本生产的多晶硅系太阳能电池。具体地，通过使用含掺杂剂的硅靶溅射制造的非晶硅膜通过等离子体多晶化，并且在非晶硅膜中形成PN结，从而制造具有PN结的多晶硅膜。具有PN结的多晶硅膜用作多晶硅太阳能电池的硅衬底。还公开了一种从硅锭生产含掺杂剂的硅靶的技术。

77. 发明授权

US08450819B2 Plasma doping method and apparatus thereof 有权
标题翻译：等离子体掺杂方法及其装置
公开(公告)号：US08450819B2
公开(公告)日：2013-05-28
申请号：US13291186
申请日：2011-11-08
申请人： Tomohiro Okumura , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
发明人： Tomohiro Okumura , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
IPC分类号： H01L27/14 , H01L21/44
CPC分类号： H01J37/32412 , H01L21/2236 , H01L31/18
摘要： In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.
摘要翻译：在等离子体焰炬单元中，具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部，并且在其周边设置有黄铜块。当气体被供应到圆柱形腔室中时，向导体杆供应高频电力，并且在圆柱形腔室中产生等离子体，使得等离子体照射基材。

78. 发明申请

US20120227808A1 PROCESS FOR PRODUCTION OF SILICON POWDER, MULTI-CRYSTAL-TYPE SOLAR CELL PANEL, AND PROCESS FOR PRODUCTION OF THE SOLAR CELL PANEL 审中-公开
标题翻译：硅粉，多晶型太阳能电池板的制造方法以及太阳能电池板的制造方法
公开(公告)号：US20120227808A1
公开(公告)日：2012-09-13
申请号：US13503066
申请日：2010-10-19
申请人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ooido , Nobuyuki Kamikihara , Tomohiro Okumura
发明人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ooido , Nobuyuki Kamikihara , Tomohiro Okumura
IPC分类号： H01L31/0368 , B02C19/00
CPC分类号： C01B33/02 , C01B33/037 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a process for producing a silicon powder, which comprises the steps of: powderizing a silicon ingot having a grade of 99.999% or more into a crude silicon powder having a particle diameter of 3 mm or less by means of high-pressure purified-water cutting; and reducing the crude silicon powder into a silicon powder having a particle diameter ranging from 0.01 to 10 [mu]m inclusive by means of at least one method selected from jet milling, wet granulation, ultrasonic wave disruption and shock wave disruption. The process is a technique for producing a silicon powder rapidly from a silicon ingot without reducing purity.
摘要翻译：公开了一种硅粉的制造方法，其特征在于，包括以下步骤：将具有99.999％以上等级的硅锭粉末通过高压纯化粉末粉碎至粒径为3mm以下的粗硅粉末中，水切割并且通过至少一种选自喷射研磨，湿法制粒，超声波破碎和冲击波破碎的方法将粗硅粉减少到粒径范围为0.01至10μm的硅粉末。该方法是从硅锭快速生产硅粉而不降低纯度的技术。

79. 发明申请

US20070059848A1 Method of controlling impurity doping and impurity doping apparatus 失效
标题翻译：控制杂质掺杂和杂质掺杂装置的方法
公开(公告)号：US20070059848A1
公开(公告)日：2007-03-15
申请号：US10570787
申请日：2004-09-06
申请人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
发明人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
IPC分类号： H01L21/66 , H01L21/26 , H01L21/04 , H01L21/00
CPC分类号： H01L21/265
摘要： Disclosed here is a method of controlling a dose amount of dopant to be doped into object (1) to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of object (1), the amount of ions having dopant in plasma that collide with object (1), and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of object (1), and a dose amount by ions from the determined amount of ions containing dopant that collide with object (1); and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
摘要翻译：这里公开了一种控制待掺杂到待等离子体掺杂的物体（1）中的掺杂剂的剂量的方法。根据该方法，掺杂控制由以下处理形成：确定物体（1）的温度，与物体（1）碰撞的等离子体中具有掺杂剂的离子的量以及掺杂期间的等离子体中的气体的种类; 根据物体（1）的温度由中性气体计算剂量，以及来自与物体（1）碰撞的确定量的含离子的离子的剂量; 并进行掺杂，使得中性气体的剂量量与离子的剂量之和等于预定剂量的量。

80. 发明授权

US07135089B2 Method and apparatus for plasma processing 有权
公开(公告)号：US07135089B2
公开(公告)日：2006-11-14
申请号：US11067628
申请日：2005-02-28
申请人： Tomohiro Okumura , Ichiro Nakayama
发明人： Tomohiro Okumura , Ichiro Nakayama
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321
摘要： A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.

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