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71. 发明专利

NO317905B1 未知
公开(公告)号：NO317905B1
公开(公告)日：2004-12-27
申请号：NO20024335
申请日：2002-09-11
申请人： THIN FILM ELECTRONICS ASA
发明人： GUDESEN HANS GUDE , JOHANSSON MATS , BROMS PER , SANDSTROM PER , LEISTAD GEIRR I , NORDAL PER-ERIK
IPC分类号： G11C11/22 , G11C7/00

72. 发明专利

NO20041540D0 未知
公开(公告)号：NO20041540D0
公开(公告)日：2004-04-15
申请号：NO20041540
申请日：2004-04-15
申请人： THIN FILM ELECTRONICS ASA
发明人： GUSTAFSSON GORAN , GUDESEN HANS GUDE , LEISTAD GEIRR I , ENGQUIST ISAK
IPC分类号： G11C20060101 , G11C11/22 , G11C
摘要： In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.

73. 发明专利

RU2216055C2 READ-ONLY MEMORY AND READ-ONLY MEMORY DEVICES 未知
公开(公告)号：RU2216055C2
公开(公告)日：2003-11-10
申请号：RU2000108581
申请日：1998-08-28
申请人： THIN FILM ELECTRONICS ASA
发明人： GUDESEN HANS GUDE , NORDAL PER-ERIK , LEISTAD GEIRR I
IPC分类号： G11C16/04 , G11C20060101 , G11C11/56 , G11C17/06 , G11C17/10 , H01L20060101 , H01L27/02 , H01L27/10 , H01L27/102 , H01L27/112 , H01L27/28 , H01L51/05
摘要： FIELD: electrically addressed nonvolatile read-only memory. SUBSTANCE: electrically addressed nonvolatile read-only memory that provides for multilayer coding of desired locations or their addresses has set of memory locations, passive matrix incorporating parallel electrodes, vertical and horizontal buses, semiconductor material, and insulating material. Read-only memory device has one or more electrically addressed nonvolatile read-only memories, as well as master and control circuits. EFFECT: provision for developing three-dimensional memory device. 26 cl, 16 dwg

74. 发明专利

CA2480307A1 A VOLUMETRIC DATA STORAGE APPARATUS COMPRISING A PLURALITY OF STACKED MATRIX-ADDRESSABLE MEMORY DEVICES 未知
公开(公告)号：CA2480307A1
公开(公告)日：2003-10-02
申请号：CA2480307
申请日：2003-03-21
申请人： THIN FILM ELECTRONICS ASA
发明人： LEISTAD GEIRR I , GUDESEN HANS GUDE
IPC分类号： H01L27/105 , G11C5/00 , G11C7/00 , G11C8/14 , H01L21/8246 , H01L21/84 , H01L25/065 , H01L27/12 , G11C11/22 , H01L27/01 , G11C5/02 , H01L23/48
摘要： In a volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices (M) electrode means (E) are provided so as to form alternating word and bit line means (WL; BL) for the memory devices, whereby the number of the electrode means is only one more than the number o f memory devices. Moreover adjoining electrode means (Ek, Ek+1) are arranged i n such a manner as to furnish a high proportion of memory cells (6) which can be switched in two or more directions, thus yielding a much higher output when addressed and having an improved signal-to-noise ratio. Each memory device ( M) can, due to having a dense electrode arrangement, be provided with an attainable memory cell fill factor approaching unity and half the memory cel ls can in case be provided switchable in two or more directions, such that the fill factor of these in any case shall approach 0.5. A volumetric data stora ge apparatus with a very high storage density can hence be obtained, while several of the problems encountered with prior art stacked memory devices ar e obviated.

75. 发明专利

NO315399B1 未知
公开(公告)号：NO315399B1
公开(公告)日：2003-08-25
申请号：NO20021057
申请日：2002-03-01
申请人： THIN FILM ELECTRONICS ASA
发明人： NORDAL PER-ERIK , GUDESEN HANS GUDE
IPC分类号： H01L27/105 , G11C11/22 , H01L21/8246 , H01L27/115 , H01L29/861 , G11C5/06
摘要： In a ferroelectret or electret memory cell a polymeric memory material is a blend of two or more polymeric materials, the polymeric material being provided contacting first and second electrodes. Each electrode is a composite multilayer having a first highly conducting layer and a conducting polymer layer, the latter forming a contact between the former and the memory material.

76. 发明专利

NO20025991L 未知
公开(公告)号：NO20025991L
公开(公告)日：2003-06-16
申请号：NO20025991
申请日：2002-12-12
申请人： THIN FILM ELECTRONICS ASA
发明人： GUDESEN HANS GUDE , NORDAL PER-ERIK
IPC分类号： G11C20060101 , G11C5/06 , G11C11/22

77. 发明专利

CA2294164C OPTICAL LOGIC ELEMENT AND METHODS FOR RESPECTIVELY ITS PREPARATION AND OPTICAL ADDRESSING, AS WELL AS THE USE THEREOF IN AN OPTICAL LOGIC DEVICE 未知
公开(公告)号：CA2294164C
公开(公告)日：2003-04-22
申请号：CA2294164
申请日：1998-06-05
申请人： THIN FILM ELECTRONICS ASA
发明人： NORDAL PER-ERIK , LEISTAD GEIRR I , GUDESEN HANS GUDE
IPC分类号： G02F3/00 , G02F3/02 , G11C7/00 , G11C11/56 , G11C13/00 , G11C13/02 , G11C13/04
摘要： In a multistable optical logic element with a light-sensitive organic materi al (1) which undergoes a photocycle with several physical states by irradiation with light, and wherein a physical state is assigned a logical value which c an be changed by addressing the element optically, the element initially before the addressing is in a metastable state generated in advance. A multistable optical logic element has been made proximity-addressable by providing at least a colour light source (1) for optical addressing and at least one colo ur- sensitive optical detector (5) adjacent to the light-sensitive material. In a method for preparing of the light-sensitive material (1) a desired initial metastable state is generated in the photocycle and assigned a determined logical value for the element. In a method for optical addressing of the optical logic element steps for respectively writing and storing, reading, erasing and switching comprises generating transitions between states in the photocycle and detection of the states. Use in an optical logical device for storing and processing of data.

78. 发明专利

CA2459319A1 NON-VOLATILE MEMORY DEVICE 未知
公开(公告)号：CA2459319A1
公开(公告)日：2003-03-13
申请号：CA2459319
申请日：2002-08-28
申请人： THIN FILM ELECTRONICS ASA
发明人： GUDESEN HANS GUDE , NORDAL PER-ERIK
IPC分类号： G01C11/22 , G11C11/22 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L27/28 , H01L51/05 , C08L27/16
摘要： In a non-volatile memory device (10) comprising an electrically polarizable dielectric memory material (11) with ferroelectric or electret properties an d capable of exhibiting hysteresis and remanence, wherein the memory material (11) comprises one or more polymers, at least one of these polymers is a deuterated polymer.

79. 发明专利

NO20014272A 未知
公开(公告)号：NO20014272A
公开(公告)日：2003-03-04
申请号：NO20014272
申请日：2001-09-03
申请人： THIN FILM ELECTRONICS ASA
发明人： GUDESEN HANS GUDE , NORDAL PER-ERIK
IPC分类号： G01C11/22 , G11C11/22 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L27/28 , H01L51/05
CPC分类号： H01L27/11502 , G11C11/22

80. 发明专利

NO20025991D0 未知
公开(公告)号：NO20025991D0
公开(公告)日：2002-12-12
申请号：NO20025991
申请日：2002-12-12
申请人： THIN FILM ELECTRONICS ASA
发明人： GUDESEN HANS GUDE , NORDAL PER-ERIK
IPC分类号： G11C20060101 , G11C5/06 , G11C11/22 , G11C

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