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71. 发明授权

US07217659B2 Process for producing materials for electronic device 失效
标题翻译：电子设备材料生产工艺
公开(公告)号：US07217659B2
公开(公告)日：2007-05-15
申请号：US11068933
申请日：2005-03-02
申请人： Takuya Sugawara , Toshio Nakanishi , Shigenori Ozaki , Seiji Matsuyama , Shigemi Murakawa , Yoshihide Tada
发明人： Takuya Sugawara , Toshio Nakanishi , Shigenori Ozaki , Seiji Matsuyama , Shigemi Murakawa , Yoshihide Tada
IPC分类号： H01L21/44
CPC分类号： C23C16/56 , C23C16/401 , C23C16/402 , H01J37/3222 , H01J37/3244 , H01L21/02164 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02271 , H01L21/0234 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28273 , H01L21/3105 , H01L21/31604 , H01L21/31612 , H01L21/31658 , H01L21/31662 , H01L21/76826 , H01L21/76828 , H01L29/517 , H01L29/518
摘要： A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconducting layer. The process includes a step of CVD-treating a substrate to be processed having single-crystal silicon as a main component to thereby form an insulating layer, and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots to thereby modify the insulating film by using the thus generated plasma.
摘要翻译：一种制造具有绝缘层和半导体层的高质量MOS型半导体的电子器件材料的方法。该方法包括以单晶硅作为主要成分进行CVD处理的步骤，从而形成绝缘层;以及将从被处理基板暴露于从工艺生成的等离子体的步骤通过具有多个槽的平面天线构件在微波照射的基础上进行气体化，从而通过使用由此产生的等离子体来修正绝缘膜。

72. 发明申请

US20060199398A1 Method of modifying insulating film 有权
标题翻译：绝缘膜改性方法
公开(公告)号：US20060199398A1
公开(公告)日：2006-09-07
申请号：US11289330
申请日：2005-11-30
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/00
CPC分类号： H01L21/02112 , H01L21/0234 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L29/518 , H01L29/78
摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
摘要翻译：通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

73. 发明申请

US20050255711A1 Method for forming underlying insulation film 有权
标题翻译：形成底层绝缘膜的方法
公开(公告)号：US20050255711A1
公开(公告)日：2005-11-17
申请号：US10509371
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shiqenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shiqenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/02 , H01L21/28 , H01L21/316 , H01L29/51 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L21/31645 , H01L21/31662 , H01L28/56 , H01L29/517 , H01L29/518
摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.
摘要翻译：基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

74. 发明申请

US20050161434A1 Method for forming insulation film 失效
标题翻译：绝缘膜形成方法
公开(公告)号：US20050161434A1
公开(公告)日：2005-07-28
申请号：US10509370
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
IPC分类号： F02D41/02 , H01L21/3105 , H01L21/316 , H01L21/318 , H01L29/78 , C23F1/00
CPC分类号： H01L21/022 , H01L21/0214 , H01L21/02164 , H01L21/02326 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3165 , H01L21/3185 , Y10T428/12736 , Y10T428/12806
摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.
摘要翻译：在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性原理。通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

75. 发明授权

US6076484A Apparatus and method for microwave plasma process 有权
标题翻译：微波等离子体处理装置及方法
公开(公告)号：US6076484A
公开(公告)日：2000-06-20
申请号：US170747
申请日：1998-10-13
申请人： Naoki Matsumoto , Toshio Nakanishi
发明人： Naoki Matsumoto , Toshio Nakanishi
IPC分类号： H01J37/32 , C23C16/00
CPC分类号： H01J37/32211 , H01J37/32192
摘要： The invention provides a microwave plasma process apparatus in which an antenna having a tubular member curved in a C shape or a spiral shape and including a slit is disposed on a sealing member for sealing a chamber, so that a microwave can be emitted through the slit to the sealing member.
摘要翻译：本发明提供了一种微波等离子体处理装置，其中具有弯曲成C形或螺旋形并且包括狭缝的管状构件的天线设置在用于密封室的密封构件上，使得可以通过狭缝发射微波到密封构件。

76. 发明授权

US5255160A Electronic device package 失效
标题翻译：电子设备包装
公开(公告)号：US5255160A
公开(公告)日：1993-10-19
申请号：US804382
申请日：1991-12-10
申请人： Misao Iwatare , Toshimasa Umetsu , Toshio Nakanishi , Makoto Moribe , Keijiro Kadomatsu , Toshiki Shimasaki , Satoru Onodera
发明人： Misao Iwatare , Toshimasa Umetsu , Toshio Nakanishi , Makoto Moribe , Keijiro Kadomatsu , Toshiki Shimasaki , Satoru Onodera
IPC分类号： H01R13/629 , H05K7/14 , H01R13/62
CPC分类号： H05K7/1409 , H01R12/7005 , H01R13/62933
摘要： An electronic device package accommodatable in an electronic device casing. When a high density multipin connector is caused to mate with a connector mounted on the casing, the former is once brought to a stop just before mating with the latter and, therefore, prevented from rapidly mating with the latter. This eliminates the damage to the body of the connector and the deformation of the pins of the connector.
摘要翻译：一种可容纳在电子设备外壳中的电子设备封装。当使高密度多管连接器与安装在外壳上的连接器配合时，前者在与之配合之前就一度停止，并因此防止其与后者快速配合。这消除了连接器主体的损坏和连接器的销的变形。

77. 发明申请

US20110206590A1 SILICON OXIDE FILM, METHOD FOR FORMING SILICON OXIDE FILM, AND PLASMA CVD APPARATUS 审中-公开
标题翻译：硅氧烷膜，形成硅氧烷膜的方法和等离子体CVD装置
公开(公告)号：US20110206590A1
公开(公告)日：2011-08-25
申请号：US13121598
申请日：2009-09-30
申请人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Junya Miyahara
发明人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Junya Miyahara
IPC分类号： C23C16/40 , C23C16/34 , C23C16/455 , C23C16/511 , C23C16/52 , C01B33/12
CPC分类号： H01L21/31612 , C23C16/308 , C23C16/402 , C23C16/511 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/3145
摘要： To form a dense high-quality silicon oxide film (SiO2 film or SiON film) having excellent insulating properties and an etching rate below or equal to 0.11 nm/s when using a 0.5% dilute hydrofluoric acid solution, plasma CVD is performed by setting a pressure within the processing container in the range from 0.1 Pa to 6.7 Pa. and using a process gas containing an SiCl4 gas or an Si2H6 gas, and an oxygen gas, in a plasma CVD apparatus in which plasma is generated by introducing microwaves into a processing container through a planar antenna having a plurality of holes.
摘要翻译：为了在使用0.5％稀氢氟酸溶液时形成绝缘性优异且蚀刻速度小于或等于0.11nm / s的致密高品质氧化硅膜（SiO 2膜或SiON膜），通过设定在等离子体CVD装置中使用含有SiCl 4气体或Si 2 H 6气体的处理气体和氧气的处理容器内的压力在0.1Pa〜6.7Pa的范围内，其中通过将微波引入等离子体进行处理容器通过具有多个孔的平面天线。

78. 发明申请

US20110086485A1 METHOD FOR MANUFACTURING A MOS SEMICONDUCTOR MEMORY DEVICE, AND PLASMA CVD DEVICE 有权
标题翻译：用于制造MOS半导体存储器件的方法和等离子体CVD器件
公开(公告)号：US20110086485A1
公开(公告)日：2011-04-14
申请号：US12935792
申请日：2009-03-30
申请人： Tetsuo Endoh , Masayuki Kohno , Syuichiro Otao , Minoru Honda , Toshio Nakanishi
发明人： Tetsuo Endoh , Masayuki Kohno , Syuichiro Otao , Minoru Honda , Toshio Nakanishi
IPC分类号： H01L21/336 , C23C16/00
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45565 , C23C16/511 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/792
摘要： To manufacture a MOS semiconductor memory device having an insulating film laminate in which adjacent insulating films have band-gaps of different sizes, a plasma processing device which transmits microwaves to a chamber by means of a planar antenna having a plurality of holes is used to perform plasma CVD under pressure conditions that differ from at least pressure conditions used when forming the adjacent insulating films, and the insulating films are sequentially formed by altering the band-gaps of the adjacent insulating films that constitute the insulating film laminate.
摘要翻译：为了制造具有绝缘膜层叠体的MOS半导体存储器件，其中相邻的绝缘膜具有不同尺寸的带隙，使用通过具有多个孔的平面天线将微波传输到腔室的等离子体处理装置来执行在形成相邻绝缘膜时使用的至少压力条件不同的压力条件下的等离子体CVD，并且通过改变构成绝缘膜层叠体的相邻绝缘膜的带隙来顺序地形成绝缘膜。

79. 发明授权

US07763551B2 RLSA CVD deposition control using halogen gas for hydrogen scavenging 失效
标题翻译：使用卤素气体进行氢气清除的RLSA CVD沉积控制
公开(公告)号：US07763551B2
公开(公告)日：2010-07-27
申请号：US12059100
申请日：2008-03-31
申请人： Jozef Brcka , Song Yun Kang , Toshio Nakanishi , Peter L. G. Ventzek , Minoru Honda , Masayuki Kohno
发明人： Jozef Brcka , Song Yun Kang , Toshio Nakanishi , Peter L. G. Ventzek , Minoru Honda , Masayuki Kohno
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/511 , H01J37/32192 , H01J37/3222 , Y10T29/41
摘要： Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si2H6+NH3+Ar gas mixtures using a radial line slot antenna (RLSA) microwave plasma to deposit SiN by CVD, deposition rate and film uniformity are improved by limiting the amounts of atomic or molecular hydrogen from the gas mixture during the deposition process. A halogen, for example, fluorine, is added to a gas mixture of silane or disilane, ammonia and argon. The halogen scavenges hydrogen from the mixture, and prevents the hydrogen from blocking the nitrogen and silicon atoms and their fragments from bonding to the surface atoms and to grow stoichiometric silicon nitride. Adding the halogen generates free halogen radicals that react with hydrogen to create hydrogen halide, for example, HF or HCl, thereby scavenging the hydrogen.
摘要翻译：微波等离子体中复合气体混合物中氮化硅的化学气相沉积（CVD）控制了膜厚均匀性和化学计量，沉积速率增加。在使用径向线槽天线（RLSA）微波等离子体通过CVD沉积SiN的Si 2 H 6 + NH 3 + Ar气体混合物中，通过在沉积过程中限制来自气体混合物的原子或分子氢的量来提高沉积速率和膜均匀性。将卤素，例如氟加入到硅烷或乙硅烷，氨和氩的气体混合物中。卤素从混合物中清除氢，并且防止氢阻挡氮和硅原子及其片段与表面原子结合并生长化学计量的氮化硅。加入卤素产生与氢反应产生卤化氢，例如HF或HCl的游离卤素自由基，从而清除氢。

80. 发明授权

US07662236B2 Method for forming insulation film 失效
标题翻译：绝缘膜形成方法
公开(公告)号：US07662236B2
公开(公告)日：2010-02-16
申请号：US12145971
申请日：2008-06-25
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00
CPC分类号： H01L21/022 , H01L21/0214 , H01L21/02164 , H01L21/02326 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3165 , H01L21/3185 , Y10T428/12736 , Y10T428/12806
摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.
摘要翻译：在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性原理。通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

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