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71. 发明申请

US20060198599A1 Potassium niobate deposited body and method for manufacturing the same, piezoelectric thin film resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus 失效
公开(公告)号：US20060198599A1
公开(公告)日：2006-09-07
申请号：US11334711
申请日：2006-01-18
申请人： Takamitsu Higuchi , Taku Aoyama
发明人： Takamitsu Higuchi , Taku Aoyama
IPC分类号： G02B6/00
CPC分类号： H01L41/319 , C30B23/025 , C30B29/30 , G02F1/3551 , H01L41/0815 , H01L41/1873 , H01L41/316 , Y10T29/42
摘要： A method for manufacturing a potassium niobate deposited body includes: forming a buffer layer above a substrate composed of an R-plane sapphire substrate; forming above the buffer layer a potassium niobate layer or a potassium niobate solid solution layer that epitaxially grows in a (100) orientation in a pseudo cubic system expression; and forming an electrode layer above the potassium niobate layer or the potassium niobate solid solution layer, wherein a (100) plane of the potassium niobate layer or the potassium niobate solid solution layer is formed to tilt with a [11-20] direction vector as a rotation axis with respect to an R-plane (1-102) of the R-plane sapphire substrate.

72. 发明申请

US20060197406A1 Potassium niobate deposited body and method for manufacturing the same, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic apparatus 失效
公开(公告)号：US20060197406A1
公开(公告)日：2006-09-07
申请号：US11334712
申请日：2006-01-18
申请人： Takamitsu Higuchi , Taku Aoyama
发明人： Takamitsu Higuchi , Taku Aoyama
IPC分类号： H01L41/18
CPC分类号： C30B23/02 , C30B29/30 , H01L41/1873 , H01L41/316 , H01L41/319 , H03H9/02574 , Y10T29/42
摘要： A potassium niobate deposited body in accordance with an embodiment of the invention includes an R-plane sapphire substrate, and a potassium niobate layer or a potassium niobate solid solution layer formed above the R-plane sapphire substrate, wherein the potassium niobate layer or the potassium niobate solid solution layer epitaxially grows in a (100) orientation in a pseudo cubic system expression, and the potassium niobate layer or the potassium niobate solid solution layer has a (100) plane that tilts with a [11-20] direction vector as a rotation axis with respect to an R-plane (1-102) of the R-plane sapphire substrate.

73. 发明申请

US20060037183A1 Method for manufacturing piezoelectric thin film resonator, piezoelectric thin film resonator, frequency filter; method for manufacturing oscillator, oscillator, electronic circuit, and electronic apparatus 失效
标题翻译：压电薄膜谐振器的制造方法，压电薄膜谐振器，滤波器; 制造振荡器，振荡器，电子电路和电子设备的方法
公开(公告)号：US20060037183A1
公开(公告)日：2006-02-23
申请号：US11190038
申请日：2005-07-26
申请人： Setsuya Iwashita , Takamitsu Higuchi
发明人： Setsuya Iwashita , Takamitsu Higuchi
IPC分类号： H04R17/00 , H01G7/00
CPC分类号： H01L41/319 , H03H3/02 , H03H9/02031 , H03H9/0542 , H03H9/173 , Y10T29/42 , Y10T29/435 , Y10T29/49128 , Y10T29/49156
摘要： To provide a method for manufacturing a piezoelectric thin film resonator with excellent characteristics. A method for manufacturing a piezoelectric thin film resonator in accordance with the present invention includes a step of forming a laminated body by successively laminating, above a first substrate, a piezoelectric thin film and a first electrode, a step of bonding a second substrate and the laminated body, a step of separating the first substrate from the laminated body, a step of forming a second electrode above the piezoelectric thin film, and a step of patterning the second electrode, the piezoelectric thin film and the first electrode.
摘要翻译：提供一种制造具有优异特性的压电薄膜谐振器的方法。根据本发明的压电薄膜谐振器的制造方法包括：通过在第一基板上方依次层叠形成压电薄膜和第一电极而形成层压体的步骤，接合第二基板和层压体，从层叠体分离第一基板的步骤，在压电薄膜的上方形成第二电极的工序，以及对第二电极，压电薄膜和第一电极进行图案化的工序。

74. 发明申请

US20050134652A1 Ink jet head and its manufacturing method, and ink jet printer 失效
标题翻译：喷墨头及其制造方法，以及喷墨打印机
公开(公告)号：US20050134652A1
公开(公告)日：2005-06-23
申请号：US11002964
申请日：2004-12-02
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa , Satoshi Nebashi
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa , Satoshi Nebashi
IPC分类号： B41J2/045 , B41J2/055 , B41J2/14 , B41J2/16
CPC分类号： B41J2/14233
摘要： An ink jet head is provided that can effectively suppress operational interferences among adjacent cavities, and is capable of ultra-high-density and high-speed printing. The ink jet head is equipped with a plurality of cavities each having a volume that is variable by a deformation operation of a piezoelectric element, wherein beam members are provided between inner walls that interpose the cavity.
摘要翻译：提供一种喷墨头，能够有效地抑制相邻空腔之间的操作干扰，能够进行超高密度和高速打印。喷墨头配备有多个空腔，每个空腔具有通过压电元件的变形操作而变化的体积，其中梁构件设置在插入空腔的内壁之间。

75. 发明申请

US20050122005A1 Piezoelectric device, liquid jetting head, ferroelectric device, electronic device and methods for manufacturing these devices 失效
标题翻译：压电元件，液体喷射头，铁电元件，电子器件及其制造方法
公开(公告)号：US20050122005A1
公开(公告)日：2005-06-09
申请号：US10705251
申请日：2003-11-12
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Koji Sumi , Masami Murai , Maki Ito , Li Xin-Shan
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Koji Sumi , Masami Murai , Maki Ito , Li Xin-Shan
IPC分类号： B41J2/16 , H01L21/316 , H01L41/047 , H01L41/09 , H01L41/22
CPC分类号： H01L41/04 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1642 , B41J2/1643 , B41J2/1645 , B41J2/1646 , H01L21/31691 , H01L41/0973 , H01L41/316
摘要： An intermediate film (15, 12, 53) is formed on a substrate (11, 52), a bottom electrode (13, 542) is formed on top of this intermediate film, a ferroelectric film (24) or piezoelectric film (543) is formed on top of this bottom electrode by an ion beam assist method, and a top electrode (25, 541) is formed on top of this ferroelectric film or piezoelectric film. The ferroelectric film or piezoelectric film is formed by PZT, BST or a relaxer material. As a result of the use of an ion beam assist method in the formation of any one of the intermediate film, bottom electrode, ferroelectric film or piezoelectric film, a piezoelectric device or ferroelectric device which has a piezoelectric film or ferroelectric film with an in-plane orientation can be manufactured with good efficiency.
摘要翻译：在基板（11,52）上形成中间膜（15,12,53），在该中间膜的顶部，铁电体膜（24）或压电膜（543）上形成有底部电极（13,542）通过离子束辅助法形成在该底部电极的顶部上，并且在该铁电体膜或压电膜的顶部上形成顶部电极（25,541）。铁电体膜或压电膜由PZT，BST或松弛材料形成。通过使用离子束辅助方法来形成中间膜，底部电极，铁电体膜或压电膜中的任一个的结果，具有压电膜或铁电体膜的压电器件或铁电体器件，可以以良好的效率制造平面取向。

76. 发明申请

US20050097716A1 Method of manufacturing piezoelectric device and ferroelectric device, droplet ejection head, and electronic equipment 有权
标题翻译：制造压电器件和铁电器件，液滴喷射头和电子设备的方法
公开(公告)号：US20050097716A1
公开(公告)日：2005-05-12
申请号：US10944852
申请日：2004-09-21
申请人： Atsushi Takakuwa , Takamitsu Higuchi , Setsuya Iwashita
发明人： Atsushi Takakuwa , Takamitsu Higuchi , Setsuya Iwashita
IPC分类号： H01L41/22 , B41J2/14 , B41J2/16 , H01L21/314 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/317 , H01L41/319 , H01L41/331 , H01L41/39 , H04R17/00 , H04R31/00 , H05K3/20
CPC分类号： H01L41/04 , B41J2/1609 , B41J2/161 , B41J2/1612 , B41J2/1642 , B82Y30/00 , H01L21/31691 , H01L41/29 , H01L41/318 , H01L41/319 , H04R17/00 , H04R31/00 , Y10T29/42 , Y10T29/49128 , Y10T29/49155
摘要： Exemplary embodiments of the present invention provide a method of manufacturing a piezoelectric device that includes a piezoelectric layer having high crystallinity in which crystal orientation is aligned to a desired direction, a method of manufacturing a ferroelectric device that includes a ferroelectric layer having the similar high crystallinity, and so forth. Exemplary embodiments include an insulating layer composed of SiO2 and so forth and a buffer layer composed of strontium oxide (SrO) and so forth are formed on a substrate such as a silicon single crystal wafer in sequence, and then a lower electrode composed of strontium ruthenate (SRO) is formed on the buffer layer. By forming self-assembled monolayers on the lower electrode, high affinity regions A1 and low affinity regions A2 are formed. Then, piezoelectric layers are selectively formed only on the high affinity regions A1.
摘要翻译：本发明的示例性实施例提供了一种制造压电器件的方法，该压电器件包括具有高结晶度的压电层，其中晶体取向与期望的方向对准，制造铁电体器件的方法包括具有相似高结晶度的铁电层，等等。示例性实施例包括由SiO 2等构成的绝缘层和由氧化锶（SrO）等构成的缓冲层依次形成在诸如硅单晶晶片的基板上，然后由碲酸锶组成的下电极（SRO）形成在缓冲层上。通过在下电极上形成自组装单层，形成高亲和性区域A1和低亲和性区域A2。然后，仅在高亲和力区域A1上选择性地形成压电层。

77. 发明授权

US5849667A Superconductor and method of producing same 失效
标题翻译：超导体及其制造方法
公开(公告)号：US5849667A
公开(公告)日：1998-12-15
申请号：US683915
申请日：1996-07-19
申请人： Masato Murakami , Sang-Im Yoo , Naomichi Sakai , Hiroshi Takaichi , Takamitsu Higuchi , Shoji Tanaka
发明人： Masato Murakami , Sang-Im Yoo , Naomichi Sakai , Hiroshi Takaichi , Takamitsu Higuchi , Shoji Tanaka
IPC分类号： H01L39/12 , H01B12/00 , C04B35/50
CPC分类号： H01L39/126 , Y10S505/742 , Y10S505/778 , Y10S505/779 , Y10S505/785
摘要： A high critical temperature and high critical current density superconductor is disclosed which contains a metal oxide expressed by the following formula (I): (R.sup.1.sub.1-x, Ba.sub.x)Ba.sub.2 Cu.sub.3 O.sub.d (I) wherein R.sup.1 stands for at least one element selected from the group consisting of La, Nd, Sm, Eu and Gd, x is a number greater than 0 but not greater than 0.5 and d is a number between 6.2 and 7.2. Fine phases of RE211, RE422 and/or a metal oxide expressed by the formula (R.sup.2.sub.1-z, Ba.sub.z) (Ba.sub.1-y, R.sup.2.sub.y).sub.2 Cu.sub.3 O.sub.p (R.sup.2 =La, Nd, Sm, Eu or Gd) may be dispersed in a matrix of the matrix phase of the formula (I). The above superconductor may be obtained by cooling a melt having a temperature of 1,000.degree.-1,300.degree. C. and containing R.sup.1, Ba, Cu and O at a cooling rate of 5.degree. C./hour or less under a partial pressure of oxygen of between 0.00001 and 0.05 atm, followed by annealing at 250.degree.-600.degree. C. in an oxygen atmosphere.
摘要翻译：公开了一种高临界温度和高临界电流密度超导体，其包含由下式（I）表示的金属氧化物:( R11-x，Bax）Ba2Cu3Od（I）其中R1表示选自以下的至少一种元素：的La，Nd，Sm，Eu和Gd，x是大于0但不大于0.5的数，d是6.2和7.2之间的数。 RE211，RE422和/或由式（R21-z，Baz）（Ba1-y，R2y）2Cu3Op（R2 = La，Nd，Sm，Eu或Gd）表示的金属氧化物的细相可以分散在基质的式（I）的基质相。上述超导体可以通过在5℃/小时以下的冷却速度下，在温度为1000〜-1300℃的温度下冷却含有R 1，Ba，Cu和O的熔体，在0.00001和0.05atm之间，然后在氧气氛中在250-600℃退火。

78. 发明授权

US08120178B2 Tuning fork vibration device and method for manufacturing the same 有权
标题翻译：调弦叉振动装置及其制造方法
公开(公告)号：US08120178B2
公开(公告)日：2012-02-21
申请号：US11692365
申请日：2007-03-28
申请人： Takamitsu Higuchi , Makoto Eguchi
发明人： Takamitsu Higuchi , Makoto Eguchi
IPC分类号： H01L21/00
CPC分类号： H03H9/21 , H03H2003/026
摘要： A tuning fork vibration device includes: a SOI substrate having a substrate, an oxide layer formed above the substrate and a semiconductor layer formed above the oxide layer; a tuning fork type vibration section that is formed by processing the semiconductor layer and the oxide layer and composed of the semiconductor layer; and a driving section for generating flexural vibration of the vibration section, wherein the vibration section includes a support section and two beam sections formed in a cantilever shape with the support section as a base of the beam sections, and the driving section includes a pair of drivers formed on each of the two beam sections, each of the drivers including a first electrode layer, a piezoelectric layer formed above the first electrode layer and a second electrode layer formed above the piezoelectric layer.
摘要翻译：音叉振动装置包括：具有衬底的SOI衬底，在衬底上形成的氧化物层和形成在氧化物层上方的半导体层; 通过处理半导体层和氧化物层并由半导体层组成的音叉型振动部分; 以及用于产生振动部分的弯曲振动的驱动部分，其中所述振动部分包括支撑部分和形成为悬臂形状的两个梁部分，其中所述支撑部分为所述梁部分的基部，并且所述驱动部分包括一对驱动器形成在两个光束部分中的每一个上，每个驱动器包括第一电极层，形成在第一电极层上方的压电层和形成在压电层上方的第二电极层。

79. 发明授权

US07565724B2 Method of manufacturing a piezoelectric element 失效
标题翻译：制造压电元件的方法
公开(公告)号：US07565724B2
公开(公告)日：2009-07-28
申请号：US11358893
申请日：2006-02-20
申请人： Setsuya Iwashita , Koji Ohashi , Takamitsu Higuchi
发明人： Setsuya Iwashita , Koji Ohashi , Takamitsu Higuchi
IPC分类号： H04R17/00
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1629 , B41J2/1642 , B41J2/1646 , B41J2202/03 , H01L41/0478 , H01L41/29 , H01L41/319 , Y10T29/42 , Y10T29/49128 , Y10T29/49155
摘要： A method for manufacturing a piezoelectric element includes the steps of forming a first electrode above a substrate, forming, above the first electrode, a piezoelectric layer composed of a piezoelectric material having a perovskite structure, and forming a second electrode above the piezoelectric layer, wherein the step of forming the first electrode includes forming a layer containing nickel, and forming, above the layer containing nickel, a lanthanum nickelate layer that is oriented to a cubic (100).
摘要翻译：一种制造压电元件的方法包括以下步骤：在基板上形成第一电极，在第一电极上形成由具有钙钛矿结构的压电材料构成的压电层，并在压电层上形成第二电极，形成第一电极的步骤包括形成包含镍的层，并且在包含镍的层上方形成定向为立方（100）的镍酸镧层。

80. 发明授权

US07521134B2 Potassium niobate deposited body and method for manufacturing the same, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic apparatus 失效
标题翻译：铌酸钾沉积体及其制造方法，表面声波元件，频率滤波器，振荡器，电子电路和电子设备
公开(公告)号：US07521134B2
公开(公告)日：2009-04-21
申请号：US11334712
申请日：2006-01-18
申请人： Takamitsu Higuchi , Taku Aoyama
发明人： Takamitsu Higuchi , Taku Aoyama
IPC分类号： H01L41/08 , H01L41/00 , H01R9/00 , B32B9/00
CPC分类号： C30B23/02 , C30B29/30 , H01L41/1873 , H01L41/316 , H01L41/319 , H03H9/02574 , Y10T29/42
摘要： A potassium niobate deposited body in accordance with an embodiment of the invention includes an R-plane sapphire substrate, and a potassium niobate layer or a potassium niobate solid solution layer formed above the R-plane sapphire substrate, wherein the potassium niobate layer or the potassium niobate solid solution layer epitaxially grows in a (100) orientation in a pseudo cubic system expression, and the potassium niobate layer or the potassium niobate solid solution layer has a (100) plane that tilts with a [11-20] direction vector as a rotation axis with respect to an R-plane (1-102) of the R-plane sapphire substrate.
摘要翻译：根据本发明的实施方案的铌酸钾沉积体包括R平面蓝宝石衬底和形成在R平面蓝宝石衬底上方的铌酸钾层或铌酸钾固溶体层，其中铌酸钾层或钾铌酸盐固溶体层以假立方体系表达式以（100）取向外延生长，并且铌酸钾层或铌酸钾固溶体层具有以[11-20]方向矢量倾斜的（100）面作为旋转轴相对于R平面蓝宝石衬底的R平面（1-102）。

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