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71. 发明授权

US06320211B1 Semiconductor device and electronic device by use of the semiconductor 失效
标题翻译：半导体器件和使用半导体的电子器件
公开(公告)号：US06320211B1
公开(公告)日：2001-11-20
申请号：US08017411
申请日：1993-02-11
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： H01L310328
CPC分类号： H01L29/0895 , H01L29/66234 , H01L29/7311
摘要： A semiconductor device is provided with a collector region having a first material of a first conductivity type. A base region is provided having a second material of the opposite conductivity type, and an emitter region is also provided having a third material of the first conducting type. A thin film is disposed on the emitter region for facilitating a tunnel current. A semiconductor is disposed on the thin film and has an energy band gap broader than that of the third material.
摘要翻译：半导体器件设置有具有第一导电类型的第一材料的集电极区域。提供具有相反导电类型的第二材料的基极区域，并且还提供具有第一导电类型的第三材料的发射极区域。在发射极区域上设置薄膜以便于隧道电流。半导体被布置在薄膜上并且具有比第三材料宽的能带宽。

72. 发明授权

US5789790A Semiconductor device 失效
公开(公告)号：US5789790A
公开(公告)日：1998-08-04
申请号：US549517
申请日：1995-10-27
申请人： Masakazu Morishita , Shigetoshi Sugawa , Toru Koizumi
发明人： Masakazu Morishita , Shigetoshi Sugawa , Toru Koizumi
IPC分类号： H01L21/331 , H01L21/8249 , H01L27/06 , H01L27/07 , H01L29/10 , H01L29/73 , H01L29/739 , H01L29/78 , H01L29/786 , H01L29/76 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/78696 , H01L27/0623 , H01L27/0722 , H01L29/1087 , H01L29/7317 , H01L29/739 , H01L29/7838 , H01L29/78654
摘要： A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.

73. 发明授权

US5708281A Semiconductor device and photoelectric conversion apparatus using the same 失效
标题翻译：半导体装置及其使用的光电转换装置
公开(公告)号：US5708281A
公开(公告)日：1998-01-13
申请号：US213821
申请日：1994-03-14
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： H01L29/73 , H01L21/265 , H01L21/331 , H01L27/146 , H01L29/161 , H01L29/165 , H01L29/36 , H01L29/737 , H01L31/10 , H01L31/11 , H01L31/0328 , H01L31/0312 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66242 , H01L27/14681 , H01L29/161 , H01L29/165 , H01L29/36 , H01L29/7375 , H01L31/1105
摘要： A semiconductor device comprises an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type. At least a vicinity of an interface of the emitter to base junction is formed by Si. Polycrystalline or single crystalline Si.sub.1-x C.sub.x (x.ltoreq.0.5) is formed on a region formed by the Si of said emitter. A junction between a region of the Si and a region of the polycrystalline and the single crystalline Si.sub.1-x C.sub.x is a graded hetero junction.
摘要翻译：半导体器件包括第一导电类型的发射极，第二导电类型的基极和第一导电类型的集电极。至少由Si形成发射极 - 基极结的界面附近。在由所述发射极的Si形成的区域上形成多晶或单晶Si1-xCx（x <0.5）。 Si的区域和多晶区域和单晶Si1-xCx之间的结点是渐变异质结。

74. 发明授权

US5691546A Semiconductor device having a high current gain and a higher Ge amount at the base region than at the emitter and collector regions, and photoelectric conversion apparatus using the device 失效
标题翻译：在基极区域具有比在发射极和集电极区域处具有高电流增益和高Ge量的半导体器件，以及使用该器件的光电转换装置
公开(公告)号：US5691546A
公开(公告)日：1997-11-25
申请号：US348073
申请日：1994-11-23
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： H01L27/146 , H01L31/11 , H01L29/06
CPC分类号： H01L27/14681 , H01L31/1105
摘要： A semiconductor device comprises at least an emitter region of a first conductivity type, a base region of a second conductivity type, and a collector region of a first conductivity type. The base region essentially consists of Si.sub.1-X Ge.sub.X (0
摘要翻译：半导体器件至少包括第一导电类型的发射极区域，第二导电类型的基极区域和第一导电类型的集电极区域。基极区域基本上由Si1-XGeX（0

75. 发明授权

US5352920A Photoelectric converter with light shielding sections 失效
标题翻译：具有遮光部分的光电转换器
公开(公告)号：US5352920A
公开(公告)日：1994-10-04
申请号：US51785
申请日：1993-04-26
申请人： Masakazu Morishita , Shin Kikuchi
发明人： Masakazu Morishita , Shin Kikuchi
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14681
摘要： A photoelectric converter comprised of a semiconductor transistor comprises two semiconductor regions of same electroconductive type and a semiconductor region of opposite electroconductive type to that of the two semiconductor regions. The semiconductor region of opposite electroconductive type is irradiated with a light. An amplified power is output from at least one of the two semiconductor regions of same electroconductive type. The semiconductor region of the opposite electroconductive type comprises a semiconductor region that accumulates a charge generated by light input and a semiconductor region acting as a control electrode region for the semiconductor transistor.
摘要翻译：由半导体晶体管组成的光电转换器包括两个相同导电类型的半导体区域和与两个半导体区域相反的导电类型的半导体区域。相反导电型的半导体区域用光照射。放大的功率从相同导电类型的两个半导体区域中的至少一个输出。相反导电型的半导体区域包括累积由光输入产生的电荷的半导体区域和用作半导体晶体管的控制电极区域的半导体区域。

76. 发明授权

US5144398A Semiconductor device and photoelectric conversion apparatus using the same 失效
标题翻译：半导体装置及其使用的光电转换装置
公开(公告)号：US5144398A
公开(公告)日：1992-09-01
申请号：US815844
申请日：1991-12-31
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： H01L29/73 , H01L21/265 , H01L21/331 , H01L27/146 , H01L29/161 , H01L29/165 , H01L29/36 , H01L29/737 , H01L31/10 , H01L31/11
CPC分类号： H01L29/66242 , H01L27/14681 , H01L29/161 , H01L29/165 , H01L29/36 , H01L29/7375 , H01L31/1105
摘要： A semiconductor device comprises an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type. At least a vicinity of an interface of the emitter to base junction is formed by Si. Polycrystalline or single crystalline Si.sub.1-x C.sub.x (x.ltoreq.0.5) is formed on a region formed by the Si of said emitter. A junction between a region of the Si and a region of the polycrystalline and the single crystalline Si.sub.1-x C.sub.x is a graded hetero junction.
摘要翻译：半导体器件包括第一导电类型的发射极，第二导电类型的基极和第一导电类型的集电极。至少由Si形成发射极 - 基极结的界面附近。在由所述发射体的Si形成的区域上形成多晶或单晶Si1-xCx（x <0.5）。 Si的区域和多晶区域和单晶Si1-xCx之间的结点是渐变异质结。

77. 发明授权

US4976151A Method and device for detecting blocked condition in a tube of a liquid infusion pump 失效
标题翻译：用于检测液体输液泵的管中的阻塞状态的方法和装置
公开(公告)号：US4976151A
公开(公告)日：1990-12-11
申请号：US494838
申请日：1990-03-15
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： G01F13/00 , A61M1/10 , A61M5/00 , A61M5/168 , G01L9/00 , G01V9/00
CPC分类号： A61M5/16854 , G01L9/0004
摘要： A detector for a blocked condition in a tube of a liquid infusion pump includes a moveable shaft which is kept in contact with the outer wall of a flexible tube for transporting a liquid therethrough and moves according to the changes in the outer diameter of the tube corresponding to changes in the internal pressure of the liquid. A magnet core is affixed to this shaft and affects the inductance of a solenoid coil which is affixed at a fixed position. A blocked condition in the tube is detected by monitoring the change in the inductance of this coil.
摘要翻译：用于液体输注泵的管中的阻塞状态的检测器包括可移动轴，其与柔性管的外壁保持接触，用于输送液体，并且根据管的外径的变化相应地移动以改变液体的内部压力。磁芯固定到该轴上并影响固定在固定位置的电磁线圈的电感。通过监测该线圈的电感变化来检测管中的阻塞状态。

78. 发明授权

US4534033A Three terminal semiconductor laser 失效
标题翻译：三端子半导体激光器
公开(公告)号：US4534033A
公开(公告)日：1985-08-06
申请号：US411080
申请日：1982-08-24
申请人： Jun-ichi Nishizawa , Tadahiro Ohmi , Masakazu Morishita
发明人： Jun-ichi Nishizawa , Tadahiro Ohmi , Masakazu Morishita
IPC分类号： H01S5/042 , H01S5/40 , H04B10/50 , H01S3/19
CPC分类号： H04B10/50 , H01S5/0422 , H01S5/0425 , H01S5/4031
摘要： A semiconductor laser includes an anode region of a first conductivity type made of a highly doped region, an active layer adjacent the anode region, a channel region made of a high-resistivity region and adjacent the active layer, a cathode region of a second conductivity type at one end of the channel region which is made of a highly doped region, and a gate region that surrounds at least part of said channel region and which is made of a highly doped region of the first conductivity type. The anode region and channel region have a wider band gap than that of the active layer.
摘要翻译：半导体激光器包括由高掺杂区域构成的第一导电类型的阳极区域，与阳极区域相邻的有源层，由高电阻率区域形成并与有源层相邻的沟道区域，第二导电性的阴极区域在由高掺杂区域制成的沟道区域的一端上形成栅极区域，以及围绕所述沟道区域的至少一部分并且由第一导电类型的高掺杂区域制成的栅极区域。阳极区域和沟道区域具有比有源层宽的带隙。

79. 发明申请

US20100054407A1 PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM HAVING THE APPARATUS 失效
标题翻译：具有装置的光电转换装置和光电转换系统
公开(公告)号：US20100054407A1
公开(公告)日：2010-03-04
申请号：US12615345
申请日：2009-11-10
申请人： Tadao Endo , Noriyuki Kaifu , Toshiaki Sato , Masakazu Morishita
发明人： Tadao Endo , Noriyuki Kaifu , Toshiaki Sato , Masakazu Morishita
IPC分类号： G01N23/04
CPC分类号： H04N5/363 , H01L27/14609 , H04N5/32 , H04N5/335 , H04N5/365 , H04N5/3742 , H04N5/378
摘要： In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the form of serial signals.
摘要翻译：为了提供一种光电转换装置，其是读取速度高，S / N高，色调级高，成本低的装置，具有包含多个光电转换元件的光电转换电路部，切换为了输出并行信号而配置在同一基板上的元件，矩阵信号线和栅极驱动线，用于向栅极驱动线施加驱动信号的驱动电路部，以及用于将通过矩阵信号线连接到串行信号以输出它们，其中读取电路部分包括与每个矩阵信号线连接的至少一个模拟运算放大器，用于传送来自各个矩阵信号线的输出信号的转换开关，通过每个放大器输出的读数电容器和读取开关，用于连续读取readi中的信号串联信号形式的电容器。

80. 发明申请

US20070115379A1 PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM HAVING THE APPARATUS 失效
标题翻译：具有装置的光电转换装置和光电转换系统
公开(公告)号：US20070115379A1
公开(公告)日：2007-05-24
申请号：US11620997
申请日：2007-01-08
申请人： Tadao ENDO , Noriyuki Kaifu , Toshiaki Sato , Masakazu Morishita
发明人： Tadao ENDO , Noriyuki Kaifu , Toshiaki Sato , Masakazu Morishita
IPC分类号： H04N5/335
CPC分类号： H04N5/363 , H01L27/14609 , H04N5/32 , H04N5/335 , H04N5/365 , H04N5/3742 , H04N5/378
摘要： In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the form of serial signals.
摘要翻译：为了提供一种光电转换装置，其是读取速度高，S / N高，色调级高，成本低的装置，具有包含多个光电转换元件的光电转换电路部，切换为了输出并行信号而配置在同一基板上的元件，矩阵信号线和栅极驱动线，用于向栅极驱动线施加驱动信号的驱动电路部，以及用于将通过矩阵信号线连接到串行信号以输出它们，其中读取电路部分包括与每个矩阵信号线连接的至少一个模拟运算放大器，用于传送来自各个矩阵信号线的输出信号的转换开关，通过每个放大器输出的读数电容器和读取开关，用于连续读取readi中的信号串联信号形式的电容器。

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