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71. 发明授权

US5382544A Manufacturing method of a semiconductor device utilizing thin metal film 失效
标题翻译：利用薄金属薄膜的半导体器件的制造方法
公开(公告)号：US5382544A
公开(公告)日：1995-01-17
申请号：US66882
申请日：1993-05-25
申请人： Michikazu Matsumoto , Kazuhiko Hashimoto
发明人： Michikazu Matsumoto , Kazuhiko Hashimoto
IPC分类号： H01L21/027 , H01L21/768 , H01L21/283 , H01L21/3205
CPC分类号： H01L21/76838 , H01L21/76802 , Y10S148/017 , Y10S148/105 , Y10S438/91 , Y10S438/945 , Y10S438/949 , Y10S438/95
摘要： A semiconductor device is manufactured using the electron beam exposure method. A resist is applied on an interlayer dielectric film through a thin metal film, and a contact hole is formed in the interlayer dielectric film. The thin metal film is utilized as a part of a second metal wiring pattern after removing its surface oxides.
摘要翻译：使用电子束曝光方法制造半导体器件。通过薄金属膜将抗蚀剂施加在层间电介质膜上，并且在层间绝缘膜中形成接触孔。在去除其表面氧化物之后，将金属薄膜用作第二金属布线图案的一部分。

72. 发明授权

US5252430A Fine pattern forming method 失效
标题翻译：精细图案形成方法
公开(公告)号：US5252430A
公开(公告)日：1993-10-12
申请号：US812839
申请日：1991-12-20
申请人： Kazuhiko Hashimoto , Noboru Nomura
发明人： Kazuhiko Hashimoto , Noboru Nomura
IPC分类号： G03F7/004 , G03F7/20 , G03F7/38 , G03C5/00
CPC分类号： G03F7/0045 , G03F7/2059 , G03F7/38 , Y10S430/143
摘要： The fine pattern forming method includes the steps of applying an organic polymer film on a semiconductor substrate and heat treating the same; applying a resin solution (including an acid degradation polymer or an acid reactive monomer, an acid generator capable of generating an acid by irradiation with an electric charged beam, and a silicone resin) on the organic polymer layer and heat treating the same; carrying out a heat treatment after a pattern is written, causing the generated acid to react with the acid degradation polymer or the acid reactive monomer and carrying out a development in an alkaline solution to form a resist pattern; and etching the organic polymer layer using the resist pattern as a mask. The use of the resist layer including the silicone resin, the acid generator, and the acid degradation polymer or the acid reactive monomer enables an accurate fine resist pattern to be formed which has a high sensitivity and dry etching resistance, and in which charging is prevented when a pattern is written by a charged beam.
摘要翻译：精细图案形成方法包括以下步骤：在半导体衬底上施加有机聚合物膜并对其进行热处理; 在有机聚合物层上涂布树脂溶液（包括酸降解聚合物或酸反应性单体，能够通过带电束照射产生酸的酸产生剂和有机硅树脂）并对其进行热处理; 在图案写入之后进行热处理，使所产生的酸与酸降解聚合物或酸反应性单体反应，并在碱性溶液中进行显影以形成抗蚀剂图案; 并使用抗蚀图案作为掩模蚀刻有机聚合物层。使用包含硅树脂，酸产生剂，酸降解聚合物或酸反应性单体的抗蚀剂层，能够形成具有高灵敏度和耐干蚀刻性的精确的抗蚀剂图案，并且防止充电当图案由带电束写入时。

73. 发明授权

US5169494A Fine pattern forming method 失效
标题翻译：精细图案形成方法
公开(公告)号：US5169494A
公开(公告)日：1992-12-08
申请号：US742550
申请日：1991-08-08
申请人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
发明人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
IPC分类号： G03F7/039 , G03F7/09
CPC分类号： G03F7/094 , G03F7/039
摘要： The present invention provides a method of forming a fine pattern comprising the steps of forming on a semiconductor substrate an organic polymer film and heat treating it, forming on the organic polymer film an inorganic film and heat treating it, forming on the inorganic film an electron beam resist film and heat treating it, drawing a pattern on the resist film, developing it to form a resist pattern, and etching the inorganic film and the organic polymer film using the resist pattern as a mask, wherein the improvement comprises using one substance selected from the group consisting of a polyphenylene sulfide, a derivative thereof, and a polymer represented by the formula (I): ##STR1## where n is a positive integer, for forming at least one of the organic polymer film and the electron beam resist film. According to the present invention, it is possible to prevent charging by incident electrons, thereby keeping free of field butting and reduction of overlay accuracy, and to form an accurate and vertical fine resist pattern.
摘要翻译：本发明提供一种形成精细图案的方法，包括以下步骤：在半导体衬底上形成有机聚合物膜并进行热处理，在有机聚合物膜上形成无机膜并进行热处理，在无机膜上形成电子抗蚀剂膜并对其进行热处理，在抗蚀剂膜上绘制图案，将其显影以形成抗蚀剂图案，并使用抗蚀剂图案作为掩模蚀刻无机膜和有机聚合物膜，其中改进包括使用选择的一种物质由聚苯硫醚，其衍生物和由式（I）表示的聚合物组成：其中n为正整数，用于形成至少一个有机聚合物膜和电子光束抗蚀膜。根据本发明，可以防止入射电子的充电，从而保持无间隙对接和降低覆盖精度，并形成精确和垂直的精细抗蚀剂图案。

74. 发明授权

US08431325B2 Compound, resin, resist composition and method for producing resist pattern 失效
标题翻译：化合物，树脂，抗蚀剂组合物和抗蚀剂图案的制造方法
公开(公告)号：US08431325B2
公开(公告)日：2013-04-30
申请号：US12873919
申请日：2010-09-01
申请人： Kazuhiko Hashimoto , Koji Ichikawa
发明人： Kazuhiko Hashimoto , Koji Ichikawa
IPC分类号： G03F7/039 , G03F7/40 , C07C69/54 , C07C69/74 , C08F216/38 , C08F22/14
CPC分类号： C07C69/84 , C07C69/54 , C07C69/96 , C07C2603/74 , C08F20/30 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A compound of the present invention is represented by the formula (A); wherein R1 represents a hydrogen atom or a C1 to C6 alkyl group; Z1 represents a single bond, —CO—O—* or —CO—O—(CH2)k—CO—O—*; Z2 represents a single bond, *—O—CO—, *—CO—O—, *—O—(CH2)k—CO—, *—CO—(CH2)k—O—, *—O—(CH2)k—CO—O—, *—O—CO—(CH2)k—O— or *—O—CO—(CH2)k—O—CO—; k represents an integer of 1 to 6; * represents a binding position to W; W represents a C4 to C36 (n+1) valent alicyclic hydrocarbon group or a C6 to C18 (n+1) valent aromatic hydrocarbon group, one or more hydrogen atoms contained in the alicyclic hydrocarbon group and the aromatic hydrocarbon group may be replaced by a halogen atom, a C1 to C12 alkyl group, a C1 to C12 alkoxy group, a C2 to C4 acyl group or —OR10; R10 represents a hydrogen atom or a group represented by the formula (R2-2); R2 represents a hydrogen atom, a group represented by the formula (R2-1) or (R2-2); n represents an integer of 1 to 3; R4, R5 and R6 independently represent a C1 to C12 hydrocarbon group; R7 and R8 independently represent a hydrogen atom or a C1 to C12 hydrocarbon group; R9 represents a C1 to C14 hydrocarbon group.
摘要翻译：本发明的化合物由式（A）表示; 其中R1表示氢原子或C1-C6烷基; Z1表示单键，-CO-O- *或-CO-O-（CH2）k-CO-O- *; Z2表示单键，* -O-CO-，* -CO-O-，* -O-（CH2）k-CO-，* -CO-（CH2）kO-，* -O-（CH2）k -CO-O-，* -O-CO-（CH2）kO-或* -O-CO-（CH2）kO-CO-; k表示1〜6的整数， *表示与W的绑定位置; W表示C 4〜C 36（n + 1）价的脂环式烃基或C 6〜C 18（n + 1）价芳香族烃基，脂环式烃基和芳香族烃基所含有的1个以上氢原子可以被卤素原子，C1〜C12烷基，C1〜C12烷氧基，C2〜C4酰基或-OR10; R 10表示氢原子或式（R2-2）表示的基团。 R2表示氢原子，式（R2-1）或（R2-2）表示的基团; n表示1〜3的整数， R4，R5和R6独立地表示C1〜C12烃基; R7和R8独立地表示氢原子或C1〜C12烃基; R9表示C1〜C14烃基。

75. 发明授权

US08232039B2 Polymer and resist composition comprising the same 有权
标题翻译：包含其的聚合物和抗蚀剂组合物
公开(公告)号：US08232039B2
公开(公告)日：2012-07-31
申请号：US12612557
申请日：2009-11-04
申请人： Nobuo Ando , Kazuhiko Hashimoto
发明人： Nobuo Ando , Kazuhiko Hashimoto
IPC分类号： G03F7/004 , C08F232/08 , C08F224/00
CPC分类号： C08F220/08 , C08F24/00 , C08F220/12 , C08F220/26 , C08F220/28 , C08F222/14 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2059 , Y10S430/106 , Y10S430/111
摘要： A polymer comprising a structural unit represented by the formula (I): wherein R1 represents a hydrogen atom or a methyl group, X represents a linear or branched chain C1-C6 alkylene group, Z represents a group represented by the formula (Ia): wherein R2 is independently in each occurrence a linear or branched chain C1-C6 alkyl group and m represents an integer of 0 to 15, and a structural unit represented by the formula (II): wherein R3 represents a hydrogen atom or a methyl group, R4 is independently in each occurrence a linear or branched chain C1-C6 alkyl group and n represents an integer of 0 to 4.
摘要翻译：一种包含由式（I）表示的结构单元的聚合物：其中R1表示氢原子或甲基，X表示直链或支链C1-C6亚烷基，Z表示由式（Ia）表示的基团：其中R2各自独立地为直链或支链C 1 -C 6烷基，m表示0〜15的整数，和由式（II）表示的结构单元：其中，R3表示氢原子或甲基， R4各自独立地为直链或支链C1-C6烷基，n表示0〜4的整数。

76. 发明申请

US20110148477A1 SIGNAL TRANSMISSION DEVICE 审中-公开
标题翻译：信号传输设备
公开(公告)号：US20110148477A1
公开(公告)日：2011-06-23
申请号：US13062269
申请日：2009-09-30
申请人： Kohei Teramoto , Tsuyoshi Nakada , Kazuhiko Hashimoto , Hajime Koyama , Koji Tsukamoto , Yoshihiko Mori
发明人： Kohei Teramoto , Tsuyoshi Nakada , Kazuhiko Hashimoto , Hajime Koyama , Koji Tsukamoto , Yoshihiko Mori
IPC分类号： H03K19/0175
CPC分类号： H04B3/50 , H04B3/30 , H04B15/02
摘要： A signal transmission device includes a transmitting circuit 11 and a receiving circuit 12 provided with shunt regulator power supplies 110 and 120 for causing fixed currents to flow thereinto respectively, and a signal transmission path 13 connecting between the transmitting circuit 11 and the receiving circuit 12 and having a function of preventing an alternating current component, in which a ground GNDA of the transmitting circuit 11 and a ground GNDB of the receiving circuit 12 are disposed independently of each other, and are connected to a ground GNDC of the shunt regulator power supplies 110 and 120 at a single point.
摘要翻译：信号传输装置包括发射电路11和接收电路12，该电路具有分别用于使固定电流流入其中的并联稳压器电源110和120;以及连接在发射电路11和接收电路12之间的信号传输路径13，以及具有防止交流分量的功能，其中发送电路11的接地GNDA和接收电路12的接地GNDB彼此独立地设置，并且连接到并联稳压器电源110的接地GNDC 和120点在单点。

77. 发明申请

US20100035180A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION 有权
标题翻译：化学放大正电阻组合物
公开(公告)号：US20100035180A1
公开(公告)日：2010-02-11
申请号：US12536239
申请日：2009-08-05
申请人： Masahiko Shimada , Kazuhiko Hashimoto , Satoshi Yamaguchi , Soon Shin Kim , Yoshiyuki Takata , Takashi Hiraoka
发明人： Masahiko Shimada , Kazuhiko Hashimoto , Satoshi Yamaguchi , Soon Shin Kim , Yoshiyuki Takata , Takashi Hiraoka
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a chemically amplified positive composition comprising: a resin comprising a structural unit represented by the formula (I): wherein R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group or a C1-C4 perfluoroalkyl group, Z represents a single bond or —(CH2)k—CO—X4—, k represents an integer of 1 to 4, X1, X2, X3 and X4 each independently represents an oxygen atom or a sulfur atom, m represents an integer of 1 to 3 and n represents an integer of 0 to 3, and an acid generator.
摘要翻译：本发明提供一种化学放大阳性组合物，其包含：包含由式（I）表示的结构单元的树脂：其中R1表示氢原子，卤素原子，C1-C4烷基或C1-C4全氟烷基， Z表示单键或 - （CH 2）k -CO-X 4 - ，k表示1〜4的整数，X 1，X 2，X 3，X 4各自独立地表示氧原子或硫原子，m表示1的整数 3，n表示0〜3的整数，酸产生剂。

78. 发明申请

US20080286691A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION 有权
标题翻译：化学放大正电阻组合物
公开(公告)号：US20080286691A1
公开(公告)日：2008-11-20
申请号：US12121458
申请日：2008-05-15
申请人： Makoto AKITA , Masumi Suetsugu , Kazuhiko Hashimoto
发明人： Makoto AKITA , Masumi Suetsugu , Kazuhiko Hashimoto
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , C08F8/12 , C08F8/14 , C08F12/22 , C08F212/14 , C08F212/32 , C08F220/18 , C08F2220/1891 , Y10S430/106 , Y10S430/111
摘要： A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): (ii) a polymerization unit represented by the formula (II): and (iii) at least one polymerization unit selected from the group consisting of a polymerization unit represented by the formula (III): and a polymerization unit represented by the formula (IV): and (B) at least one acid generator.
摘要翻译：一种化学放大正型抗蚀剂组合物，其包含（A）树脂，其包含（i）由式（I）表示的聚合单元：（ii）由式（II）表示的聚合单元：和（iii）至少一种聚合选自由式（III）表示的聚合单元组的单元和由式（IV）表示的聚合单元：和（B）至少一种酸产生剂。

79. 发明授权

US07389569B2 Method for manfacturing an acoustic matching member 有权
标题翻译：制造声匹配部件的方法
公开(公告)号：US07389569B2
公开(公告)日：2008-06-24
申请号：US10757829
申请日：2004-01-14
申请人： Seigo Shiraishi , Norihisa Takahara , Masaaki Suzuki , Kazuhiko Hashimoto , Takashi Hashida , Hidetomo Nagahara , Masahiko Hashimoto
发明人： Seigo Shiraishi , Norihisa Takahara , Masaaki Suzuki , Kazuhiko Hashimoto , Takashi Hashida , Hidetomo Nagahara , Masahiko Hashimoto
IPC分类号： H01L41/22 , H01L41/00
CPC分类号： G10K11/02 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4913 , Y10T29/49155 , Y10T29/49165
摘要： A method for manufacturing an acoustic matching member, the acoustic matching member being incorporated into an ultrasonic transducer for transmitting and receiving ultrasonic waves, and including: at least two layers including a first layer and a second layer that have different acoustic impedance values from each other. The method for manufacturing including the steps of: filling voids of a porous member with a fluid filling material, and solidifying both the fluid filling material inside the voids and the surplus fluid filling material at the same time. The acoustic matching member does not have independent intermediate layers between the layers, so that delamination hardly occurs and the difficulty in the designing associated with the presence of intermediate layers can be avoided.
摘要翻译：一种用于制造声匹配构件的方法，所述声匹配构件结合到用于发送和接收超声波的超声波换能器中，并且包括：包括彼此具有不同声阻抗值的第一层和第二层的至少两层。制造方法包括以下步骤：用流体填充材料填充多孔构件的空隙，同时使空隙内的流体填充材料和多余的流体填充材料同时固化。声匹配构件在层之间不具有独立的中间层，使得几乎不发生分层，并且可以避免与中间层的存在相关的设计的困难。

80. 发明授权

US07232642B2 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same 有权
标题翻译：化学扩增的正性抗蚀剂组合物，卤代酯衍生物及其制备方法
公开(公告)号：US07232642B2
公开(公告)日：2007-06-19
申请号：US11123104
申请日：2005-05-06
申请人： Ichiki Takemoto , Kazuhiko Hashimoto , Takayuki Miyagawa
发明人： Ichiki Takemoto , Kazuhiko Hashimoto , Takayuki Miyagawa
IPC分类号： G03F7/004
CPC分类号： C08F220/26 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The present invention provides a chemically amplified positive resist composition comprising (A) a resin which comprises (i) at least one structural unit selected from the group consisting of structural units of the formulas (no and (V), (ii) a structural unit of the formula (I) and (iii) a structural unit of the formula (II), and (B) an acid generator. The present invention also provides a haloester derivative of the formula (XXI) and a process for producing the same
摘要翻译：本发明提供了一种化学放大型正性抗蚀剂组合物，其包含（A）树脂，其包含（i）至少一种选自式（Ⅳ和Ⅴ）的结构单元的结构单元，（ii）结构单元式（I）和（iii）式（II）的结构单元和（B）酸产生剂，本发明还提供式（XXI）的卤代酯衍生物及其制备方法

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