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71. 发明申请

US20060213439A1 Plasma enhanced atomic layer deposition system having reduced contamination 有权
标题翻译：等离子体增强的原子层沉积系统具有减少的污染
公开(公告)号：US20060213439A1
公开(公告)日：2006-09-28
申请号：US11090939
申请日：2005-03-25
申请人： Tadahiro Ishizaka
发明人： Tadahiro Ishizaka
IPC分类号： C23C16/00
CPC分类号： C23C16/45542 , C23C16/4401 , C23C16/45525 , C23C16/45544 , C23C16/4583 , H01L21/67155 , H01L21/67751
摘要： A plasma enhanced atomic layer deposition (PEALD) system is described, wherein the system comprises a processing space and a high vacuum, ultra-clean transfer space. During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber and the pressures and gas flows within, to and from, and between the process chamber and the high vacuum transfer space are controlled to keep the transfer space ultra-clean.
摘要翻译：描述了等离子体增强原子层沉积（PEALD）系统，其中该系统包括处理空间和高真空，超清洁的传输空间。在加工过程中，形成薄保形膜的基板暴露于处理空间。在衬底转移期间，衬底暴露于高真空空间。加工气体被顺序地和交替地引入处理室，并且控制在处理室和高真空传送空间之内，之间和之间以及之间的压力和气体流动，以保持传送空间超清洁。

72. 发明申请

US20060068104A1 Thin-film formation in semiconductor device fabrication process and film deposition apparatus 审中-公开
标题翻译：半导体器件制造工艺中的薄膜形成和成膜装置
公开(公告)号：US20060068104A1
公开(公告)日：2006-03-30
申请号：US11231962
申请日：2005-09-22
申请人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
发明人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/45529 , C23C16/45542 , H01L21/28562 , H01L21/76846 , H01L21/7685 , H01L2221/1078
摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.
摘要翻译：用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b）将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤，将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

73. 发明授权

US08716132B2 Radiation-assisted selective deposition of metal-containing cap layers 有权
标题翻译：含金属盖层的辐射辅助选择性沉积
公开(公告)号：US08716132B2
公开(公告)日：2014-05-06
申请号：US12371411
申请日：2009-02-13
申请人： Tadahiro Ishizaka , Shigeru Mizuno
发明人： Tadahiro Ishizaka , Shigeru Mizuno
IPC分类号： H01L21/3205
CPC分类号： H01L21/76886 , C23C16/047 , C23C16/16 , C23C16/45523 , H01L21/02074 , H01L21/28562 , H01L21/3205 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76883
摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, exposing the patterned substrate to a process gas comprising a metal-containing precursor, and irradiating the patterned substrate with electromagnetic radiation, where selective metal-containing cap layer formation on the Cu metal surfaces is facilitated by the electromagnetic radiation. In some embodiments, the method further includes pre-treating the patterned substrate with additional electromagnetic radiation and optionally a cleaning gas prior to forming the metal-containing cap layer.
摘要翻译：一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中以改善体Cu金属中的电迁移和应力迁移的方法。在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的图案化衬底，将图案化衬底暴露于包含含金属前体的工艺气体，并用电磁辐射照射图案化衬底，其中选择性含金属盖通过电磁辐射促进了Cu金属表面上的层形成。在一些实施例中，该方法还包括在形成含金属盖层之前，用额外的电磁辐射和任选的清洁气体预处理图案化衬底。

74. 发明授权

US08058728B2 Diffusion barrier and adhesion layer for an interconnect structure 有权
标题翻译：用于互连结构的扩散阻挡层和粘合层
公开(公告)号：US08058728B2
公开(公告)日：2011-11-15
申请号：US12242416
申请日：2008-09-30
申请人： Tadahiro Ishizaka , Shigeru Mizuno
发明人： Tadahiro Ishizaka , Shigeru Mizuno
IPC分类号： H01L23/48
CPC分类号： H01L21/76844 , H01L21/76831 , H01L21/76846 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76873
摘要： An interconnect structure is provided. The interconnect structure includes an interconnect opening formed within a dielectric material, a diffusion barrier on the dielectric material, where the diffusion barrier contains a compound from a thermal reaction between cobalt (Co) metal from at least a portion of a cobalt metal layer formed on the dielectric material and a dielectric reactant element from the dielectric material. The interconnect structure further includes a cobalt nitride adhesion layer in the interconnect opening, and a Cu metal fill in the interconnect opening, wherein the diffusion barrier and the cobalt nitride adhesion layer surround the Cu metal fill within the interconnect opening.
摘要翻译：提供互连结构。所述互连结构包括形成在电介质材料内的互连开口，介电材料上的扩散阻挡层，其中所述扩散阻挡层包含来自在钴金属层的至少一部分上形成的钴（Co）金属之间的热反应的化合物电介质材料和介电反应物元件。所述互连结构还包括所述互连开口中的氮化钴粘合层和所述互连开口中的Cu金属填充物，其中所述扩散阻挡层和所述钴酸钾粘附层围绕所述互连开口内的所述Cu金属填充物。

75. 发明授权

US07829158B2 Method for depositing a barrier layer on a low dielectric constant material 有权
标题翻译：在低介电常数材料上沉积阻挡层的方法
公开(公告)号：US07829158B2
公开(公告)日：2010-11-09
申请号：US11745384
申请日：2007-05-07
申请人： Tadahiro Ishizaka
发明人： Tadahiro Ishizaka
IPC分类号： C23C16/16 , H05H1/24
CPC分类号： C23C16/0281 , C23C16/34 , C23C16/36 , C23C16/45536 , C23C16/4554 , H01J37/32091 , H01J2237/2001 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： A method of forming a tantalum containing multi-layer film. In one embodiment, the method includes disposing a substrate in a process chamber, heating the substrate, exposing the substrate to a tantalum containing precursor to adsorb at least a portion of the tantalum containing precursor on a surface of the substrate, purging the process chamber with a purge gas, and exposing the substrate to a process space comprising helium and hydrogen ionized at a first radio frequency power to form a first tantalum containing layer on the surface. The method further includes exposing the substrate to the tantalum containing precursor to adsorb at least a portion of the precursor on the first tantalum containing layer, purging the process chamber with the purge gas, and exposing the substrate to the process space at a second radio frequency power to form a second tantalum containing layer, where the second radio frequency power is different from the first radio frequency power.
摘要翻译：一种形成含钽多层膜的方法。在一个实施例中，该方法包括将衬底设置在处理室中，加热衬底，将衬底暴露于含钽前体，以吸附至少部分含钽前体的衬底表面上，吹扫气体，并将衬底暴露于包括以第一射频功率电离的氦和氢的处理空间，以在表面上形成第一含钽层。该方法还包括将衬底暴露于含钽前体以吸附第一钽含量层上的前体的至少一部分，用吹扫气体清洗处理室，并以第二射频将衬底暴露于处理空间以形成第二钽含量层，其中第二射频功率不同于第一射频功率。

76. 发明申请

US20100210108A1 RADIATION-ASSISTED SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS 有权
标题翻译：含金属夹层的辐射辅助选择性沉积
公开(公告)号：US20100210108A1
公开(公告)日：2010-08-19
申请号：US12371411
申请日：2009-02-13
申请人： Tadahiro Ishizaka , Shigeru Mizuno
发明人： Tadahiro Ishizaka , Shigeru Mizuno
IPC分类号： H01L21/3205
CPC分类号： H01L21/76886 , C23C16/047 , C23C16/16 , C23C16/45523 , H01L21/02074 , H01L21/28562 , H01L21/3205 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76883
摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, exposing the patterned substrate to a process gas comprising a metal-containing precursor, and irradiating the patterned substrate with electromagnetic radiation, where selective metal-containing cap layer formation on the Cu metal surfaces is facilitated by the electromagnetic radiation. In some embodiments, the method further includes pre-treating the patterned substrate with additional electromagnetic radiation and optionally a cleaning gas prior to forming the metal-containing cap layer.
摘要翻译：一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中以改善体Cu金属中的电迁移和应力迁移的方法。在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的图案化衬底，将图案化衬底暴露于包含含金属前体的工艺气体，并用电磁辐射照射图案化衬底，其中选择性含金属盖通过电磁辐射促进了Cu金属表面上的层形成。在一些实施例中，该方法还包括在形成含金属盖层之前，用额外的电磁辐射和任选的清洁气体预处理图案化的衬底。

77. 发明申请

US20100081274A1 METHOD FOR FORMING RUTHENIUM METAL CAP LAYERS 审中-公开
标题翻译：形成金属箔层的方法
公开(公告)号：US20100081274A1
公开(公告)日：2010-04-01
申请号：US12240894
申请日：2008-09-29
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Frank M. Cerio, JR.
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Frank M. Cerio, JR.
IPC分类号： H01L21/4763
CPC分类号： H01L21/76814 , C23C16/0236 , C23C16/16 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/76826 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76864
摘要： A method is provided for integrating ruthenium (Ru) metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. Embodiments of the invention include treating patterned substrates containing metal layers and low-k dielectric materials with NHx (x≦3) radicals and H radicals to improve selective formation of ruthenium (Ru) metal cap layers on the metal layers relative to the low-k dielectric materials.
摘要翻译：提供了一种用于将钌（Ru）金属沉积物集成到半导体器件的制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。本发明的实施方案包括处理包含金属层和低k电介质材料的图案化衬底，其具有NH x（x和n L e 3）基团和H基团以改善相对于低k的金属层上钌（Ru）金属帽层的选择性形成介电材料。

78. 发明申请

US20090165720A1 SUBSTRATE TREATING APPARATUS 审中-公开
标题翻译：基板处理装置
公开(公告)号：US20090165720A1
公开(公告)日：2009-07-02
申请号：US12397088
申请日：2009-03-03
申请人： Yasuhiko KOJIMA , Tadahiro Ishizaka , Yumiko Kawano
发明人： Yasuhiko KOJIMA , Tadahiro Ishizaka , Yumiko Kawano
IPC分类号： C23C16/54
CPC分类号： C23C16/4409 , C23C16/4586 , C23C16/463 , H01L21/67109 , H01L21/67126
摘要： A substrate treating apparatus comprising a treatment chamber for housing a substrate, a stage on which the substrate is placed within the treatment chamber, a heating member arranged within the stage and used for heating the substrate, a sealing member arranged between the stage and the treatment chamber, and a cooling mechanism having a cooling medium, whose latent heat of vaporization is utilized for cooling the sealing member.
摘要翻译：一种基板处理装置，包括：用于容纳基板的处理室;基板被放置在处理室内的阶段;布置在所述台内并用于加热所述基板的加热构件;布置在所述台与处理之间的密封构件以及具有冷却介质的冷却机构，其利用蒸发潜热来冷却密封部件。

79. 发明申请

US20080241385A1 Method of Forming Thin Film, Thin Film Forming Apparatus, Program and Computer-Readable Information Recording Medium 审中-公开
标题翻译：形成薄膜，薄膜成型装置，程序和计算机可读信息记录介质的方法
公开(公告)号：US20080241385A1
公开(公告)日：2008-10-02
申请号：US10547784
申请日：2004-02-26
申请人： Yasuhiro Oshima , Yasuhiko Kojima , Takashi Shigeoka , Hiroshi Kannan , Tadahiro Ishizaka
发明人： Yasuhiro Oshima , Yasuhiko Kojima , Takashi Shigeoka , Hiroshi Kannan , Tadahiro Ishizaka
IPC分类号： C23C16/08 , C23C16/44
CPC分类号： C23C16/45523 , C23C16/34 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76843
摘要： A method of rapidly forming a thin film of high quality through film formation by alternate feeding of raw gases. In particular, a method of forming a TiN thin film, comprising repeating operations including causing TiCl4 gas as a raw gas to be adsorbed on a substrate or TiCl4 molecules adsorbed on a substrate and feeding NH3 gas as a reactant gas in a treating chamber so as to effect reaction of TiCl4 and NH3 leading to formation of a TiN film, which method further comprises an operation of, prior to the adsorption of TiCl4 gas on the substrate, feeding reducing H2 gas in the treating chamber (30) so as to change TiCl4 to a state of enhanced likelihood of adsorption on the substrate (e.g., TiCl3).
摘要翻译：通过交替进料原料气体，通过成膜快速形成高质量的薄膜的方法。特别是，形成TiN薄膜的方法，包括重复操作，包括使TiCl 4气体作为原料气体吸附在吸附在基底上的TiCl 4分子上底物并在处理室中加入作为反应气体的NH 3气体，以使TiCl 4和NH 3反应形成，形成的TiN膜，该方法还包括在衬底上吸附TiCl 4气体之前，在处理室（30）中进料还原H 2气体），以便将TiCl 4改变为增加在衬底上的吸附可能性（例如TiCl 3 3）的状态。

80. 发明授权

US07407876B2 Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copper 有权
标题翻译：等离子体增强了对铜具有良好附着力的TaC和TaCN膜的原子层沉积方法
公开(公告)号：US07407876B2
公开(公告)日：2008-08-05
申请号：US11378271
申请日：2006-03-20
申请人： Tadahiro Ishizaka
发明人： Tadahiro Ishizaka
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/76843 , C23C16/32 , C23C16/36 , C23C16/4554 , C23C16/5096 , H01L21/28562
摘要： A method for processing a substrate for forming TaC and TaCN films having good adhesion to Cu. The method includes disposing the substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, and depositing a TaC or TaCN film on the substrate using the PEALD process. The PEALD process includes (a) exposing the substrate to a first process material containing tantalum, (b) exposing the substrate to a second process material containing a plasma excited reducing agent, (c) repeating steps (a) (b) a predetermined number of times, (d) exposing the substrate to plasma excited Argon, and (e) repeating steps (c) and (d) until the TaC or TaCN film has a desired thickness. Preferably, purging of the process chamber is performed after one or more of the exposing steps.
摘要翻译：一种处理用于形成对Cu具有良好粘附性的TaC和TaCN膜的基板的方法。该方法包括将衬底设置在配置为执行PEALD工艺的等离子体增强原子层沉积（PEALD）系统的处理室中，以及使用PEALD工艺在衬底上沉积TaC或TaCN膜。 PEALD工艺包括（a）将衬底暴露于含有钽的第一工艺材料，（b）将衬底暴露于含有等离子体激发还原剂的第二工艺材料，（c）重复步骤（a）（b）预定数量的时间，（d）将衬底暴露于等离子体激发的氩，和（e）重复步骤（c）和（d），直到TaC或TaCN膜具有所需的厚度。优选地，在一个或多个曝光步骤之后执行处理室的清洗。

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