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    • 72. 发明申请
    • PIXEL OF A LIQUID CRYSTAL PANEL, METHOD OF FABRICATING THE SAME AND DRIVING METHOD THEREOF
    • 液晶面板的像素,其制造方法及其驱动方法
    • US20060061701A1
    • 2006-03-23
    • US10711498
    • 2004-09-22
    • Shih-Chang Chang
    • Shih-Chang Chang
    • G02F1/136
    • G02F1/1368G02F1/136213G02F2001/136236G02F2202/104
    • A method of fabricating a pixel of a liquid crystal display panel is described. A polysilicon island having an active device region and a storage capacitor region is formed over a first substrate. A bottom electrode is formed by implanting ions into the storage capacitor region of the polysilicon island. A gate-insulating layer is formed over the polysilicon island. A gate and a top electrode are formed over the gate-insulating layer. A source and a drain are formed in the polysilicon island. An insulating layer is formed over the gate-insulating layer. A pixel electrode is formed over the insulating layer and electrically connected with the drain and the bottom electrode. A second substrate having an electrode film thereon is provided. The electrode film and the top electrode are electrically connected to a common electrode. A liquid crystal layer is formed between the first and the second substrate.
    • 描述制造液晶显示面板的像素的方法。 在第一衬底上形成具有有源器件区域和存储电容器区域的多晶硅岛。 通过将离子注入到多晶硅岛的存储电容器区域中形成底部电极。 在多晶硅岛上形成栅极绝缘层。 在栅极绝缘层上形成栅极和顶部电极。 源极和漏极形成在多晶硅岛中。 在栅极绝缘层上形成绝缘层。 像素电极形成在绝缘层上并与漏极和底部电极电连接。 提供其上具有电极膜的第二基板。 电极膜和顶部电极电连接到公共电极。 在第一和第二基板之间形成液晶层。
    • 74. 发明申请
    • Thin-film devices and method for fabricating the same on same substrate
    • 薄膜器件及其制造方法
    • US20050224793A1
    • 2005-10-13
    • US10954674
    • 2004-09-30
    • Shih-Chang ChangYaw-Ming Tsai
    • Shih-Chang ChangYaw-Ming Tsai
    • H01L21/77H01L21/84H01L27/12H01L31/036
    • H01L27/1237H01L27/1214
    • To satisfy the different requirement of TFTs function as peripheral driving circuit and pixel switching device, the modified TFT structure with various thicknesses of gate insulating layers is disclosed. For the peripheral driving circuit, the thinner thickness of the gate-insulating layer is formed, the higher driving ability the TFT performs. However, for the pixel switching device, the thicker thickness of the gate insulating layer is formed, the better reliability the TFT has. The present invention provides a first TFT (peripheral driving circuit) comprising a first gate insulating layer and a second TFT (pixel switching device) comprising a first and second gate insulating layer. Thus, the gate insulating layer of the peripheral driving circuit has a thickness less then that of the pixel switching device.
    • 为了满足作为外围驱动电路和像素开关器件的TFT的不同要求,公开了具有各种厚度的栅极绝缘层的改进的TFT结构。 对于外围驱动电路,形成栅极绝缘层的厚度越薄,TFT的驱动能力越强。 然而,对于像素开关器件,形成栅极绝缘层的较厚的厚度,TFT具有更好的可靠性。 本发明提供一种第一TFT(外围驱动电路),包括第一栅极绝缘层和包括第一和第二栅极绝缘层的第二TFT(像素开关器件)。 因此,外围驱动电路的栅极绝缘层的厚度小于像素开关器件的厚度。
    • 77. 发明申请
    • Thin film transistor with self-aligned intra-gate electrode
    • 具有自对准栅极间电极的薄膜晶体管
    • US20050056838A1
    • 2005-03-17
    • US10869210
    • 2004-06-16
    • Yaw-Ming TsaiHsiu-Chun HsiehShih-Chang ChangChen-Ting HuangI-Wei Wu
    • Yaw-Ming TsaiHsiu-Chun HsiehShih-Chang ChangChen-Ting HuangI-Wei Wu
    • H01L29/423H01L29/786H01L29/04
    • H01L29/78696H01L29/42384H01L29/78645H01L29/78675
    • A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.
    • 用于有源矩阵液晶显示器的薄膜晶体管包括衬底,源极和漏极区以及至少栅电极。 衬底中包括多个本征区域,至少一个第一掺杂区域和两个第二掺杂区域。 第一掺杂区域设置在多个固有区域之间。 多个本征区域连接在一起,以经由第一掺杂区域形成连接结构,并且两个第二掺杂区域分别设置在连接结构的两端。 源区和漏区分别耦合到设置在连接结构两端的两个第二掺杂区。 栅电极设置在多个本征区域上,使得多个本征区域中的每一个的周边和相应的栅电极的周边基本上彼此对准。