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71. 发明授权

US08000066B2 Hard disk system incorporating a current perpendicular to plane magneto-resistive effect device with a spacer layer in the thickness range showing conduction performance halfway between OHMIC conduction and semi-conductive conduction 有权
标题翻译：包含垂直于平面磁阻效应器件的电流的硬盘系统，其厚度范围内的间隔层表现出OHMIC传导和半导电传导之间的传导性能
公开(公告)号：US08000066B2
公开(公告)日：2011-08-16
申请号：US11934979
申请日：2007-11-05
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Kei Hirata
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Kei Hirata
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3993 , H01F10/3254 , H01L43/10
摘要： The thickness of the semiconductor layer forming a part of the spacer layer is set in the thickness range for a transitional area showing conduction performance halfway between ohmic conduction and semi-conductive conduction in relation to the junction of the semiconductor layer with the first nonmagnetic metal layer and the second nonmagnetic metal layer. This permits the specific resistance of the spacer layer to be greater than that of an ohmic conduction area, so that spin scattering and diffusion depending on a magnetized state increases, resulting in an increase in the MR ratio. The CPP-GMR device can also have a suitable area resistivity (AR) value. If the device can have a suitable area resistivity and a high MR ratio, it is then possible to obtain more stable output power in low current operation. The device is also lower in resistance than a TMR device, so that significant noise reductions are achievable.
摘要翻译：形成间隔层的一部分的半导体层的厚度设定在相对于半导体层与第一非磁性金属层的接合部的表现为欧姆导通和半导电传导之间的导通性能的过渡区域的厚度范围和第二非磁性金属层。这允许间隔层的比电阻大于欧姆导电区域的电阻率，使得依赖于磁化状态的自旋散射和扩散增加，导致MR比的增加。 CPP-GMR装置也可以具有合适的面积电阻率（AR）值。如果器件可以具有合适的面积电阻率和高的MR比，则可以在低电流操作中获得更稳定的输出功率。该器件的电阻也比TMR器件低，从而可以实现显着的降噪。

72. 发明授权

US08149547B2 Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element 有权
标题翻译：磁阻效应元件和具有磁阻效应元件的薄膜磁头
公开(公告)号：US08149547B2
公开(公告)日：2012-04-03
申请号：US12047722
申请日：2008-03-13
申请人： Naoki Ohta , Satoshi Miura , Tomohito Mizuno
发明人： Naoki Ohta , Satoshi Miura , Tomohito Mizuno
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3929 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F10/3286
摘要： An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof.
摘要翻译： MR元件包括被钉扎层，自由层和非磁性空间层或夹在被钉扎层和自由层之间的隧道势垒层。自由层的磁化方向基本上垂直于其膜表面，并且被钉扎层的磁化方向基本上平行于其膜表面。

73. 发明授权

US08077436B2 CPP-type magnetoresistance effect element having three magnetic layers 有权
标题翻译：具有三个磁性层的CPP型磁阻效应元件
公开(公告)号：US08077436B2
公开(公告)日：2011-12-13
申请号：US12052633
申请日：2008-03-20
申请人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
发明人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01L43/08
摘要： A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface.
摘要翻译：磁阻效应元件包括：磁阻堆叠，其包括：其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，所述第二磁性层位于所述第一磁性层和所述第三磁性层之间; 夹在所述第一和第二磁性层之间的第一非磁性中间层; 以及夹在所述第二和第三磁性层之间的第二非磁性中间层; 其中感测电流适于在垂直于膜平面的方向上流动; 偏置磁性层，设置在所述磁阻堆叠的与空气轴承表面相反的一侧上。

74. 发明授权

US07609490B2 Magnetoresistive device, thin film magnetic head, head gimbal assembly, head arm assembly, magnetic disk apparatus, synthetic antiferromagnetic magnetization pinned layer, magnetic memory cell, and current sensor 有权
标题翻译：磁阻装置，薄膜磁头，头万向架组件，头臂组件，磁盘装置，合成反铁磁磁化固定层，磁存储单元和电流传感器
公开(公告)号：US07609490B2
公开(公告)日：2009-10-27
申请号：US11490112
申请日：2006-07-21
申请人： Tomohito Mizuno , Daisuke Miyauchi
发明人： Tomohito Mizuno , Daisuke Miyauchi
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B2005/3996 , G11C11/16
摘要： An MR device includes a magnetization pinned film having a nonmagnetic intermediate layer positioned on the opposite side of a magnetization free layer while sandwiching a nonmagnetic spacer layer and made of RuCu. In the case of passing read current in the stacking direction via lower and upper electrodes, decrease in a resistance change amount caused by a second magnetization pinned layer can be suppressed. Further, a first magnetization pinned layer and the second magnetization pined layer which are thicker can be antiferromagnetically coupled to each other in magnetic fields in a wider range. Thus, both increase in the resistance change amount and magnetic field stability can be achieved. Therefore, while maintaining stable operations by reducing the influence of external noise, the invention can address higher recording density by the increase in the resistance change amount as a whole.
摘要翻译： MR装置包括具有位于无磁化层的相对侧上的非磁性中间层的磁化固定膜，同时夹着非磁性间隔层并由RuCu制成。在通过下电极和上电极在层叠方向上传递读取电流的情况下，可以抑制由第二磁化固定层引起的电阻变化量的降低。此外，较厚的第一磁化固定层和第二磁化层可以在更宽范围内的磁场中彼此反铁磁耦合。因此，可以实现电阻变化量和磁场稳定性的增加。因此，通过减少外部噪声的影响来保持稳定的动作，本发明能够通过整体上的电阻变化量的增加来解决更高的记录密度。

75. 发明申请

US20050213262A1 Magnetoresistive device, thin film magnetic head, head gimbal assembly and magnetic disk unit 有权
标题翻译：磁阻装置，薄膜磁头，磁头万向架组件和磁盘装置
公开(公告)号：US20050213262A1
公开(公告)日：2005-09-29
申请号：US11076966
申请日：2005-03-11
申请人： Daisuke Miyauchi , Tomohito Mizuno
发明人： Daisuke Miyauchi , Tomohito Mizuno
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： Provided are a magnetoresistive device capable of obtaining a larger amount of resistance change and responding to a higher recording density and a thin film magnetic head comprising the magnetoresistive device. A first magnetization fixed film and a second magnetization fixed film have magnetization directions antiparallel to each other, and the second magnetization fixed film farther from a magnetization free layer is made of, for example, a material including at least one selected from the group consisting of tantalum (Ta), chromium (Cr) and vanadium (V), and has a bulk scattering coefficient of 0.25 or less. Thereby, a bulk scattering effect by the second magnetization fixed film which has a function of canceling out the amount of resistance change between the magnetization free layer and the first magnetization fixed film can be prevented, and a magnetoresistive ratio ΔR/R can be improved, and recorded magnetic information with a higher recording density can be read out.
摘要翻译：提供了能够获得更大量的电阻变化并响应较高记录密度的磁阻器件和包括磁阻器件的薄膜磁头。第一磁化固定膜和第二磁化固定膜具有彼此反平行的磁化方向，并且远离磁化自由层的第二磁化固定膜例如由包括选自以下的至少一种的材料制成：钽（Ta），铬（Cr）和钒（V），体积散射系数为0.25以下。因此，可以防止具有消除磁化自由层和第一磁化固定膜之间的电阻变化量的功能的第二磁化固定膜的体散射效应，并且可以提高磁阻比ΔR/ R，并且可以读出具有较高记录密度的记录磁信息。

76. 发明申请

US20050168888A1 Magnetoresistive sensor having cobalt-iron alloy layer in free layer 有权
标题翻译：磁阻传感器在自由层中具有钴 - 铁合金层
公开(公告)号：US20050168888A1
公开(公告)日：2005-08-04
申请号：US11043118
申请日：2005-01-27
申请人： Daisuke Miyauchi , Tomohito Mizuno
发明人： Daisuke Miyauchi , Tomohito Mizuno
IPC分类号： G11B5/39 , H01F10/14 , H01F10/16 , H01F10/32 , H01L43/08 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A magnetoresistive sensor comprises a pinned layer having a magnetization direction fixed with respect to an external magnetic field, a free layer, having a magnetization direction variable in accordance with the external magnetic field, and a spacer layer mainly containing copper, sandwiched between the pinned layer and the free layer. A sense current flows through the pinned layer, the spacer layer, and the free layer substantially in a direction in which the layers are stacked. The free layer comprises at least one intermediate stack composed of a non-magnetic layer mainly containing copper, and a first cobalt iron layers made of a cobalt iron alloy and disposed on boundaries on both sides of the non-magnetic layer, a nickel iron alloy layers disposed on boundaries on both sides of the intermediate stack, and a second cobalt iron layer made of a cobalt iron alloy and formed in contact with the spacer layer on a boundary, opposing the spacer layer, of a stack composed of the intermediate stack and the nickel iron alloy layer.
摘要翻译：磁阻传感器包括相对于外部磁场具有固定磁化方向的固定层，具有根据外部磁场可变化的磁化方向的自由层和主要包含铜的间隔层，该间隔层夹在被钉扎层和自由层。检测电流基本上沿堆叠层的方向流过被钉扎层，间隔层和自由层。自由层包括由主要包含铜的非磁性层和由钴铁合金制成并设置在非磁性层两侧的边界上的第一钴铁层构成的至少一个中间叠层，镍铁合金设置在中间堆叠的两侧的边界上的层和由钴铁合金制成的第二钴铁层，并且形成为与间隔层相对的间隔层与间隔层相对的由中间堆叠构成的堆叠和镍铁合金层。

77. 发明授权

US08599652B2 Thermally-assisted magnetic recording medium and magnetic recording/reproducing device using the same 有权
标题翻译：热辅助磁记录介质和使用其的磁记录/再现装置
公开(公告)号：US08599652B2
公开(公告)日：2013-12-03
申请号：US13182623
申请日：2011-07-14
申请人： Satoshi Tomikawa , Tomohito Mizuno
发明人： Satoshi Tomikawa , Tomohito Mizuno
IPC分类号： G11B11/00
CPC分类号： G11B5/7325 , G11B5/314 , G11B2005/0021
摘要： A thermally-assisted magnetic recording (TAMR) medium of the present invention includes: a magnetization direction arrangement layer on a substrate; and a magnetic recording layer on the magnetization direction arrangement layer, wherein the magnetization direction arrangement layer is made of at least one selected from a group consisting of Co, Zr, CoZr, CoTaZr, CoFeTaZrCr, CoNbZr, CoNiZr, FeCoZrBCu, NiFe, FeCo, FeAlN, (FeCo)N, FeAlSi, and FeTaC so that a spreading of the heating spot applied from the magnetic head for thermally-assisted recording to the film surface of the magnetic recording medium is suppressed, and that an SN is improved by arranging the magnetization direction of the perpendicularly written recording magnetization to become identical to a perpendicular direction, and realizing the higher recording density.
摘要翻译：本发明的热辅助磁记录（TAMR）介质包括：基板上的磁化方向排列层; 和磁记录层，磁化方向布置层由选自Co，Zr，CoZr，CoTaZr，CoFeTaZrCr，CoNbZr，CoNiZr，FeCoZrBCu，NiFe，FeCo， FeAlN，（FeCo）N，FeAlSi和FeTaC，从而抑制从用于热辅助记录的磁头施加的加热点到磁记录介质的膜表面的扩散，并且通过将垂直写入的记录磁化的磁化方向变得与垂直方向相同，并且实现更高的记录密度。

78. 发明申请

US20090237839A1 CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING THREE MAGNETIC LAYERS 有权
标题翻译：具有三个磁性层的CPP型磁阻效应元件
公开(公告)号：US20090237839A1
公开(公告)日：2009-09-24
申请号：US12052633
申请日：2008-03-20
申请人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
发明人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
IPC分类号： G11B5/60 , G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01L43/08
摘要： A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers, said first non-magnetic intermediate layer allowing said first magnetic layer and said second magnetic layer to be exchange-coupled such that the magnetization directions thereof are anti-parallel to each other when no magnetic field is applied; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers, said second non-magnetic intermediate layer producing a magnetoresistance effect between said second magnetic layer and said third magnetic layer; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface, said bias magnetic layer applying a bias magnetic field to said magnetoresistive stack in a direction perpendicular to the air bearing surface.
摘要翻译：磁阻效应元件包括：磁阻堆叠，其包括：其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，所述第二磁性层位于所述第一磁性层和所述第三磁性层之间; 夹在所述第一和第二磁性层之间的第一非磁性中间层，所述第一非磁性中间层允许所述第一磁性层和所述第二磁性层交换耦合，使得其磁化方向与每个磁性层反平行另外当不施加磁场时; 以及夹在所述第二和第三磁性层之间的第二非磁性中间层，所述第二非磁性中间层在所述第二磁性层和所述第三磁性层之间产生磁阻效应; 其中感测电流适于在垂直于膜平面的方向上流动; 偏置磁性层，其设置在所述磁阻堆叠的与空气支承表面相反的一侧上，所述偏磁层在与所述空气轴承表面垂直的方向上向所述磁阻堆叠施加偏置磁场。

79. 发明授权

US08773958B2 Estimation method of Curie temperature distribution width 有权
标题翻译：居里温度分布宽度估计方法
公开(公告)号：US08773958B2
公开(公告)日：2014-07-08
申请号：US13568572
申请日：2012-08-07
申请人： Satoshi Tomikawa , Tomohito Mizuno
发明人： Satoshi Tomikawa , Tomohito Mizuno
IPC分类号： G11B11/00
CPC分类号： G01R33/12 , G01R33/098
摘要： An estimation method includes a heating step in which a recording bit, on which a reference signal is recorded, is heated under each of heating conditions having different heating temperatures, the recording bit being at least one recording bit in the magnetic recording medium, and a measurement step in which a signal intensity with respect to the reference signal recorded in the recording bit after heating is measured under each of the heating conditions of the heating step. Based on the signal intensities with respect to the reference signal respectively measured in the measurement step, the distribution width of the Curie temperatures of the plurality of magnetic grains that form the magnetic recording layer is estimated.
摘要翻译：估计方法包括：加热步骤，其中记录有参考信号的记录位在具有不同加热温度的每个加热条件下被加热，所述记录位是磁记录介质中的至少一个记录位，以及测量步骤，其中在加热步骤的每个加热条件下测量相对于在加热之后记录在记录位中的参考信号的信号强度。基于相对于在测量步骤中测量的参考信号的信号强度，估计形成磁记录层的多个磁性颗粒的居里温度的分布宽度。

80. 发明授权

US07787220B2 Magnetoresistance element with improved magentoresistance change amount and with free layer having improved soft magnetic characteristics 有权
标题翻译：具有改善的磁阻变化量的磁阻元件和具有改善的软磁特性的自由层
公开(公告)号：US07787220B2
公开(公告)日：2010-08-31
申请号：US11391278
申请日：2006-03-29
申请人： Tomohito Mizuno , Daisuke Miyauchi
发明人： Tomohito Mizuno , Daisuke Miyauchi
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , G11B5/3929 , G11B2005/3996 , Y10T428/1121 , Y10T428/115 , Y10T428/1171
摘要： A free layer of an MR element incorporates a first layer, a second layer, a third layer, a fourth layer, a fifth layer and a sixth layer that are stacked in this order on a nonmagnetic conductive layer. The absolute value of magnetostriction constant of the free layer is 1×10−6 or smaller. The coercivity of the free layer is 20×79.6 A/m or smaller. The first layer is made of an alloy containing ‘a’ atomic percent cobalt and (100−a) atomic percent iron wherein ‘a’ falls within a range of 20 to 50 inclusive. The second layer is made of an alloy containing ‘b’ atomic percent cobalt and (100−b) atomic percent iron wherein ‘b’ falls within a range of 70 to 90 inclusive. In addition, oxidation treatment is given to a surface of the second layer farther from the first layer.
摘要翻译： MR元件的自由层包括在非磁性导电层上依次层叠的第一层，第二层，第三层，第四层，第五层和第六层。自由层的磁致伸缩常数的绝对值为1×10-6以下。自由层的矫顽力为20×79.6A / m以下。第一层由含有“a”原子百分比的钴和（100-a）原子百分比的铁的合金制成，其中'a'在20至50的范围内。第二层由含有'b'原子％的钴和（100-b）原子百分比的铁的合金制成，其中'b'落在70-90的范围内。此外，对第二层的离第一层更远的表面进行氧化处理。

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