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71. 发明授权

US07211874B2 Magnetic random access memory array with free layer locking mechanism 失效
标题翻译：磁性随机存取存储阵列具有自由层锁定机制
公开(公告)号：US07211874B2
公开(公告)日：2007-05-01
申请号：US10818581
申请日：2004-04-06
申请人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
发明人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
IPC分类号： H01L29/82
CPC分类号： G11C11/16
摘要： An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
摘要翻译：在正交字和位线之间形成MTJ MRAM单元元件，其自由层具有诱导磁各向异性的形状。位线是包括高导电性载流层和软相邻磁性层（SAL）的复合线。在操作期间，软磁层集中了电流的磁场，并且由于其接近于自由层，其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。在切换期间，该层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。在切换之后，由于与SAL的静磁相互作用，状态恢复到更稳定的形式，这防止了当它不被实际选择时被意外重写，并且还提供了抗热搅动的稳定性。

72. 发明申请

US20070014146A1 Method of forming super-paramagnetic cladding material on conductive lines of MRAM devices 失效
公开(公告)号：US20070014146A1
公开(公告)日：2007-01-18
申请号：US11179251
申请日：2005-07-12
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A super-paramagnetic cladding layer formed on from 1 to 3 sides of a conductive line in a magnetic device is disclosed. The cladding layer is made of “x” ML/SL stacks in which x is between 5 and 50, SL is an amorphous AlOx seed layer, and ML is a composite with a soft magnetic layer comprised of discontinuous particles less than 2 nm in size on the seed layer and a capping layer of Ru, Ta, or Cu on the soft magnetic layer. Fringing fields and hysteresis effects from continuous ferromagnetic cladding layers associated with switching the magnetic state of an adjacent MTJ are totally eliminated because of the super-paramagnetic character of the soft magnetic layer at room temperature. The soft magnetic layer has near zero magnetostriction, very high susceptibility, and may be made of Ni˜80Fe˜20, Ni˜30Fe˜70, Co˜90Fe˜10, or CoNiFe.

73. 发明申请

US20060209590A1 Amorphous layers in a magnetic tunnel junction device 失效
标题翻译：磁性隧道结装置中的无定形层
公开(公告)号：US20060209590A1
公开(公告)日：2006-09-21
申请号：US11080867
申请日：2005-03-15
申请人： Yimin Guo , Tai Min , Po-Kang Wang
发明人： Yimin Guo , Tai Min , Po-Kang Wang
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C11/15
摘要： An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum thickness (of about 15 Å). A preferred material for contacting the dielectric layer is CoFeB. Ways of overcoming problems relating to magnetostriction are disclosed and a description of a process for manufacturing the device is included.
摘要翻译：公开了一种改进的TMR装置。器件的铁磁层，特别是接触介电隧穿层的铁磁层具有无定形结构以及最小厚度（约15）。用于接触电介质层的优选材料是CoFeB。公开了克服与磁致伸缩相关的问题的方法，并且描述了用于制造该装置的方法。

74. 发明授权

US07009266B2 Method and system for providing a magnetic element including passivation structures 失效
标题翻译：用于提供包括钝化结构的磁性元件的方法和系统
公开(公告)号：US07009266B2
公开(公告)日：2006-03-07
申请号：US10781479
申请日：2004-02-17
申请人： Xizeng Shi , Po-Kang Wang , Yimin Guo , Tai Min
发明人： Xizeng Shi , Po-Kang Wang , Yimin Guo , Tai Min
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/08
摘要： A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.
摘要翻译：公开了一种使用该磁性元件提供磁性元件和磁性存储器的方法和系统。磁存储器包括多个磁性元件。该方法和系统包括为多个磁性元件中的每一个提供多个层和钝化层。磁性元件中的一部分层包括至少一个磁性层。多个层还具有顶部和多个侧面。钝化层覆盖多个边的至少一部分。

75. 发明申请

US20060028862A1 Magnetic random access memory array with proximate read and write lines cladded with magnetic material 有权
公开(公告)号：US20060028862A1
公开(公告)日：2006-02-09
申请号：US10910725
申请日：2004-08-03
申请人： Tai Min , Yimin Guo , Pokang Wang
发明人： Tai Min , Yimin Guo , Pokang Wang
IPC分类号： G11C11/15 , G11C11/00
CPC分类号： G11C11/16
摘要： An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The word and bit lines also include a soft magnetic layer of high permeability formed on their surfaces distal from the cell to improve the magnetic field still further. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions and eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

76. 发明授权

US06979586B2 Magnetic random access memory array with coupled soft adjacent magnetic layer 有权
标题翻译：具有耦合的软相邻磁性层的磁性随机存取存储器阵列
公开(公告)号：US06979586B2
公开(公告)日：2005-12-27
申请号：US10872915
申请日：2004-06-21
申请人： Yimin Guo , Tai Min , Pokang Wang , Xi Zeng Shi
发明人： Yimin Guo , Tai Min , Pokang Wang , Xi Zeng Shi
IPC分类号： A61K31/404 , C07D209/08 , G11C11/16 , H01L27/22 , H01L43/08 , H01L21/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.
摘要翻译：在正交字和位线之间形成MTJ元素。位线是在高导电率层下包括高导电性层和软磁性层的复合线。在操作期间，软磁性层集中了电流的磁场，并且由于其接近于自由层，它与MTJ中的自由层磁耦合。该耦合为自由层磁化提供了热稳定性，并且易于切换，并且可以通过在形成期间通过在自由层中引起形状或晶体各向异性而进一步增强耦合。

77. 发明授权

US06310751B1 Anti-parallel longitudinal patterned exchange biased dual stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
标题翻译：反平行纵向图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法
公开(公告)号：US06310751B1
公开(公告)日：2001-10-30
申请号：US09182775
申请日：1998-10-30
申请人： Yimin Guo , Kochan Ju , Hui-Chuan Wang , Simon H. Liao
发明人： Yimin Guo , Kochan Ju , Hui-Chuan Wang , Simon H. Liao
IPC分类号： G11B539
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3932 , G11B5/3954
摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned longitudinal magnetic biasing layers formed of a single longitudinal magnetic biasing material longitudinally magnetically biased in substantially anti-parallel directions. When longitudinally magnetically biasing the second pair of patterned longitudinal magnetic biasing layers there is employed a thermal annealing method employing a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field strength such that the pair of longitudinally magnetically biased patterned first longitudinal magnetic biasing layers is not substantially demagnetized.
摘要翻译：双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。当采用该方法制造双条磁阻（DSMR）传感器元件时，采用两对图案化的纵向磁偏置层，该纵向磁偏置层由基本反平行方向纵向磁偏置的单个纵向磁偏置材料形成。当纵向磁偏置第二对图案化的纵向磁偏置层时，采用采用热退火温度，热退火曝光时间和非本征偏磁场强度的热退火方法，使得该对纵向磁偏压图案化的第一纵向磁性偏压层基本上不退磁。

78. 发明授权

US5843521A Photoresist frame plated magnetic transducer pole layer employing high magnetic permeability seed layer 失效
标题翻译：光电阻框架电磁换能器极层采用高磁导率种子层
公开(公告)号：US5843521A
公开(公告)日：1998-12-01
申请号：US897796
申请日：1997-07-21
申请人： Kochan Ju , Mao-Min Chen , Yimin Guo
发明人： Kochan Ju , Mao-Min Chen , Yimin Guo
IPC分类号： G11B5/31 , G11B5/39 , B05D5/12
CPC分类号： G11B5/3967 , G11B5/3103 , G11B5/3113 , G11B5/3146 , G11B5/3163 , Y10T428/1186 , Y10T428/265 , Y10T428/31678
摘要： A method for forming a magnetic transducer, and a magnetic transducer formed through the method. There is first provided a substrate. There is then formed over the substrate a first magnetic pole layer. There is then formed upon the first magnetic pole layer a gap filling dielectric layer. There is then formed upon the gap filling dielectric layer a seed layer. There is then formed upon the seed layer a photoresist frame employed in a photoresist frame plating method for forming a plated second magnetic pole layer upon the seed layer, where a base of a sidewall of the photoresist frame has a taper which provides a notch within an edge of the plated second magnetic pole layer at its interface with the seed layer. There is then plated through the photoresist frame plating method the plated second magnetic pole layer upon the seed layer, where the seed layer is formed of a thickness and of a material which compensates when electromagnetically energizing the magnetic transducer for a magnetic write field gradient boundary decompression between the first magnetic pole layer and the plated second magnetic pole layer due to the notch within the plated second magnetic pole layer. The method for forming the magnetic transducer contemplates the magnetic transducer formed through the method.
摘要翻译：一种用于形成磁换能器的方法，以及通过该方法形成的磁换能器。首先提供基板。然后在衬底上形成第一磁极层。然后在第一磁极层上形成间隙填充介电层。然后在填充介电层的间隙上形成种子层。然后在种子层上形成光致抗蚀剂框架，该抗蚀剂框架用于在种子层上形成镀覆的第二磁极层的光致抗蚀剂框架镀覆方法，其中光致抗蚀剂框架的侧壁的基部具有锥形，其在电镀第二磁极层的边缘与其种子层的界面处。然后通过光致抗蚀剂框架电镀方法将电镀的第二磁极层电镀在种子层上，其中籽晶层由厚度形成，并且当材料在磁写入场梯度边界解压缩时对磁换能器进行电磁激励时补偿由于镀覆的第二磁极层内的凹口，在第一磁极层和镀覆的第二磁极层之间。用于形成磁换能器的方法考虑了通过该方法形成的磁换能器。

79. 发明授权

US11957063B2 Magnetoresistive element having a nano-current-channel structure 有权
公开(公告)号：US11957063B2
公开(公告)日：2024-04-09
申请号：US17460189
申请日：2021-08-28
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H10N50/80 , G11C11/16 , H01F10/32 , H01F41/32 , H10N50/01 , H10N50/85
CPC分类号： H10N50/80 , G11C11/161 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01F41/32 , H10N50/01 , G11C11/1675 , H01F10/3259 , H10N50/85
摘要： A magnetoresistive element comprises a nonmagnetic nano-current-channel (NCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising a spatial distribution of perpendicular conducting channels throughout the NCC structure thickness and surrounded by an insulating medium, making the magnetic recording layer a magnetically soft-hard composite structure. Correspondingly, the critical write current and write power are reduced with reversal modes of exchange-spring magnets of the magnetically soft-hard composite structure.

80. 发明授权

US11600660B2 Bottom-pinned magnetic random access memory having a composite SOT structure 有权
公开(公告)号：US11600660B2
公开(公告)日：2023-03-07
申请号：US16849571
申请日：2020-04-15
申请人： Rongfu Xiao , Yimin Guo , Jun Chen
发明人： Rongfu Xiao , Yimin Guo , Jun Chen
IPC分类号： G11C11/16 , H01L27/22 , H01L43/08 , H01L43/02 , H01L43/12
摘要： An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such bCSOT-MTJ element will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU.

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