专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20120113500A1 ELECTRONIC PAPER AND METHOD FOR PRODUCING SAME 有权
标题翻译：电子纸及其制造方法
公开(公告)号：US20120113500A1
公开(公告)日：2012-05-10
申请号：US13383010
申请日：2011-04-14
申请人： Koichi Hirano , Masami Nakagawa , Seiichi Nakatani
发明人： Koichi Hirano , Masami Nakagawa , Seiichi Nakatani
IPC分类号： G02F1/167 , H05K3/00
CPC分类号： G09F9/372 , G02F1/167 , G02F2001/1676 , G02F2201/18 , G09F9/301 , G09F15/0075
摘要： Provided is an electronic paper that permits a high-quality, large area to be easily created. Also provided is a method for producing the electronic paper. The electronic paper comprises: a first substrate upon which first electrodes are formed and a second substrate upon which second electrodes are formed, said first substrate and second substrate disposed so as to face each other; and a plurality of cell spaces constituting pixels between said first substrate and second substrate. The first substrate comprises a plurality of first sheet members, each having a first electrode formed thereon. By disposing a cover substrate on said first sheet members, each with a partition wall therebetween, a plurality of subsheet formations comprising the plurality of cell spaces partitioned by the partition walls are formed, and the first electrodes are connected in between adjacent subsheet formations.
摘要翻译：提供了允许容易地创建高质量，大面积的电子纸。还提供了一种用于生产电子纸的方法。电子纸包括：形成有第一电极的第一基板和形成有第二电极的第二基板，所述第一基板和第二基板彼此相对配置; 以及在所述第一基板和第二基板之间构成像素的多个单元空间。第一衬底包括多个第一片构件，每个第一片构件具有形成在其上的第一电极。通过将覆盖基板设置在所述第一板状部件上，每个在其间具有隔壁，形成包括由隔壁分隔的多个电池单元的多个子片形成层，并且第一电极连接在相邻的子片层之间。

72. 发明申请

US20120001173A1 FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：柔性半导体器件及其制造方法
公开(公告)号：US20120001173A1
公开(公告)日：2012-01-05
申请号：US13256457
申请日：2010-02-02
申请人： Takeshi Suzuki , Kenichi Hotehama , Seiichi Nakatani , Koichi Hirano , Tatsuo Ogawa
发明人： Takeshi Suzuki , Kenichi Hotehama , Seiichi Nakatani , Koichi Hirano , Tatsuo Ogawa
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66742 , H01L27/1218 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/7869 , H01L51/0097 , H01L51/0512
摘要： There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.
摘要翻译：提供了一种柔性半导体器件。本发明的柔性半导体器件包括支撑层，形成在支撑层上的半导体结构部分和形成在半导体结构部分上的树脂膜。树脂膜包括通过激光照射形成的开口，并且与树脂膜的开口部内的导电构件与半导体结构部的表面接触。

73. 发明申请

US20110204367A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGE DISPLAY 有权
标题翻译：半导体器件，其制造方法和图像显示器
公开(公告)号：US20110204367A1
公开(公告)日：2011-08-25
申请号：US12672135
申请日：2008-08-06
申请人： Seiichi Nakatani , Yoshihisa Yamashita , Takashi Kitae , Susumu Sawada
发明人： Seiichi Nakatani , Yoshihisa Yamashita , Takashi Kitae , Susumu Sawada
IPC分类号： H01L33/02 , H01L29/786 , H01L21/336
CPC分类号： H01L51/057 , H01L27/3274 , H01L27/3276 , H01L51/0096 , Y02E10/549 , Y02P70/521
摘要： A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided.A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other surface thereof, a source electrode disposed along the inner wall of the through hole, a drain electrode disposed along the inner wall of the through hole, a gate electrode disposed on the other surface of the resin film opposing the through hole, an insulating layer disposed on the gate electrode at the bottom of the through hole and an organic semiconductor disposed in the through hole so as to contact the source electrode and the drain electrode, wherein the organic semiconductor makes contact with at least a part of the insulating layer at the bottom of the through hole so that a channel is formed in the organic semiconductor in the vicinity of the insulating layer that is in contact therewith.
摘要翻译：提供了具有以更高密度形成的半导体元件的半导体器件。此外，还提供了使用该半导体器件的图像显示装置。一种半导体器件，包括具有从一个表面到另一个表面穿透的通孔的树脂膜，沿着通孔的内壁设置的源电极，沿该通孔的内壁设置的漏电极，设置在与通孔相对的树脂膜的另一个表面上的栅电极，设置在通孔底部的栅电极上的绝缘层和布置在通孔中的有机半导体，以便与源电极和漏极电极，其中有机半导体与通孔底部的绝缘层的至少一部分接触，使得在与其接触的绝缘层附近的有机半导体中形成沟道。

74. 发明申请

US20110204366A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGE DISPLAY 有权
标题翻译：半导体器件，其制造方法和图像显示器
公开(公告)号：US20110204366A1
公开(公告)日：2011-08-25
申请号：US12672127
申请日：2008-08-06
申请人： Seiichi Nakatani , Yoshihisa Yamashita , Takashi Kitae , Susumu Sawada
发明人： Seiichi Nakatani , Yoshihisa Yamashita , Takashi Kitae , Susumu Sawada
IPC分类号： H01L33/02 , H01L29/786 , H01L21/336
CPC分类号： H01L27/3274 , H01L27/283 , H01L27/3248 , H01L27/3276 , H01L51/0005 , H01L51/0558 , H01L2227/323
摘要： A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided.A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other surface thereof, an organic semiconductor disposed inside the through hole, an insulating film on one end of the organic semiconductor, a gate electrode on the insulating film, a source electrode connected electrically to the other end of the organic semiconductor and a drain electrode connected electrically to the other end of the organic semiconductor.
摘要翻译：提供了具有以更高密度形成的半导体元件的半导体器件。此外，还提供了使用该半导体器件的图像显示装置。一种半导体器件，包括具有从一个表面到另一个表面穿透的通孔的树脂膜，设置在所述通孔内的有机半导体，在所述有机半导体的一端上的绝缘膜，所述绝缘膜上的栅电极与该有机半导体的另一端电连接的源电极和与该有机半导体的另一端电连接的漏电极。

75. 发明授权

US07911064B2 Mounted body and method for manufacturing the same 有权
标题翻译：安装体及其制造方法
公开(公告)号：US07911064B2
公开(公告)日：2011-03-22
申请号：US11908087
申请日：2006-02-28
申请人： Shingo Komatsu , Seiichi Nakatani , Seiji Karashima , Toshiyuki Kojima , Takashi Kitae , Yoshihisa Yamashita
发明人： Shingo Komatsu , Seiichi Nakatani , Seiji Karashima , Toshiyuki Kojima , Takashi Kitae , Yoshihisa Yamashita
IPC分类号： H01L21/44 , H01L23/52 , H01L23/40 , H01L23/48 , H01L21/00
CPC分类号： H01L24/81 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/81801 , H01L2224/83886 , H01L2225/06517 , H01L2225/06527 , H01L2225/06582 , H01L2225/06593 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/30105 , H01L2924/00014 , H01L2924/00
摘要： A mounted body of the present invention includes: a multilayer semiconductor chip 20 including a plurality of semiconductor chips 10 (10a, 10b) that are stacked; and a mounting board 13 on which the multilayer semiconductor chip 20 is mounted. In this mounted body, each of the semiconductor chips 10 (10a, 10b) in the multilayer semiconductor chip 20 has a plurality of element electrodes 12 (12a, 12b) on a chip surface 21 (21a, 21b) facing toward the mounting board 13. On the mounting board 13, electrode terminals 14 are formed so as to correspond to the plurality of element electrodes (12a, 12b), respectively, and the electrode terminals 14 of the mounting board and the element electrodes (12a, 12b) are connected electrically to each other via solder bump formed as a result of assembly of solder particles. With this configuration, a mounted body on which a stacked package is mounted can be manufactured easily.
摘要翻译：本发明的安装体包括：层叠半导体芯片10（10a，10b）的多层半导体芯片20，以及安装基板13，其上安装有多层半导体芯片20。在该安装体中，多层半导体芯片20中的各半导体芯片10（10a，10b）在与安装基板13相对的芯片面21（21a，21b）上具有多个元件电极12（12a，12b）在安装基板13上分别形成有与多个元件电极（12a，12b）对应的电极端子14，并且安装基板的电极端子14和元件电极（12a，12b）被连接通过焊料颗粒的组装形成的焊锡凸块彼此电连接。利用这种结构，可以容易地制造安装有堆叠的包装的安装体。

76. 发明授权

US07850803B2 Method for connecting electronic components, method for forming bump and conductive connection film and fabrication apparatus for electronic component mounted body, bump and conductive correction film 失效
标题翻译：电子元件连接方法，凸点形成方法及导电连接膜及电子部件安装体，凸块及导电校正膜的制造装置
公开(公告)号：US07850803B2
公开(公告)日：2010-12-14
申请号：US11783750
申请日：2007-04-11
申请人： Tsukasa Shiraishi , Seiichi Nakatani
发明人： Tsukasa Shiraishi , Seiichi Nakatani
IPC分类号： B32B37/00
CPC分类号： H05K3/3484 , B01D21/283 , H01L21/563 , H01L21/6835 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/28 , H01L24/31 , H01L24/742 , H01L24/81 , H01L24/83 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/11003 , H01L2224/11005 , H01L2224/1152 , H01L2224/13099 , H01L2224/16225 , H01L2224/2919 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81903 , H01L2224/83886 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H05K3/323 , H05K2201/10674 , H05K2201/10977 , H05K2203/0285 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A liquid resin in which conductive particles are dispersed is supplied to between a circuit substrate and a semiconductor chip disposed so as to face each other and an ultrasonic wave having an amplitude in a perpendicular direction to a surface of the circuit substrate to generate a standing wave in a resin. Then, the conductive particles dispersed in the resin are captured at nodes of the standing wave to form connection bodies of aggregation of the conductive particles between connection terminals of the semiconductor chip and terminals of the circuit substrate. Thus, the semiconductor chip is mounted on the circuit substrate via the connection bodies. The terminals are arrayed so as to be spaced apart from one another by half a wavelength of the standing wave and each of the nodes of the standing wave are generated at a position between the terminals in the resin.
摘要翻译：将分散有导电粒子的液态树脂供给到电路基板与设置为彼此相对的半导体芯片之间，并且具有与电路基板的表面垂直的振幅的超声波，以产生驻波在树脂中。然后，分散在树脂中的导电颗粒在驻波的节点处被捕获，以在半导体芯片的连接端子和电路基板的端子之间形成导电颗粒的聚集的连接体。因此，半导体芯片经由连接体安装在电路基板上。端子排列成彼此间隔开驻波的一半波长，并且在树脂中的端子之间的位置处产生驻波的每个节点。

77. 发明申请

US20100276691A1 METHOD FOR FABRICATING FLEXIBLE SEMICONDUCTOR DEVICE AND LAYERED FILM USED THEREFORE 有权
标题翻译：用于制造柔性半导体器件的方法及其使用的层状膜
公开(公告)号：US20100276691A1
公开(公告)日：2010-11-04
申请号：US12746440
申请日：2009-07-22
申请人： Takashi Ichiryu , Seiichi Nakatani , Koichi Hirano , Yoshihisa Yamashita , Shingo Komatsu
发明人： Takashi Ichiryu , Seiichi Nakatani , Koichi Hirano , Yoshihisa Yamashita , Shingo Komatsu
IPC分类号： H01L29/786 , H01L21/336 , H01L21/77
CPC分类号： H01L29/78603 , H01L24/19 , H01L24/82 , H01L27/1218 , H01L29/66765 , H01L29/78609 , H01L29/78681 , H01L29/7869 , H01L51/0024 , H01L51/003 , H01L51/0097 , H01L51/0541 , H01L51/0545 , H01L2221/68377 , H01L2224/04105 , H01L2224/73267 , H01L2224/76155 , H01L2224/82039 , H01L2224/82102 , H01L2224/92144 , H01L2224/92244 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/01056 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01078 , H01L2924/01082 , H01L2924/04941 , H01L2924/04953 , H01L2924/10329 , H01L2924/12042 , H01L2924/15788 , H01L2924/19041 , H01L2924/30105 , H01L2924/00
摘要： A method for fabricating a flexible semiconductor device includes: preparing a layered film 80 including a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40 which are sequentially formed; etching the first metal layer 10 to form a gate electrode 12g; compression bonding a resin layer 50 to a surface of the layered film 80 provided with the gate electrode 12g to allow the gate electrode 12g to be embedded in the resin layer 50; and etching the second metal layer 40 to form a source electrode 42s and a drain electrode 42d, wherein the inorganic insulating layer 20 on the gate electrode 12g functions as a gate insulating film 22, and the semiconductor layer 30 between the source electrode 42s and drain electrode 42d on the inorganic insulating layer 20 functions as a channel 32.
摘要翻译：一种制造柔性半导体器件的方法包括：制备包括依次形成的第一金属层10，无机绝缘层20，半导体层30和第二金属层40的层状膜80; 蚀刻第一金属层10以形成栅电极12g; 将树脂层50压接到设置有栅电极12g的层叠膜80的表面，以使栅电极12g嵌入树脂层50中; 并且蚀刻第二金属层40以形成源电极42s和漏电极42d，其中栅电极12g上的无机绝缘层20用作栅极绝缘膜22，并且源电极42s和漏极之间的半导体层30 无机绝缘层20上的电极42d用作通道32。

78. 发明申请

US20100224986A1 MOUNTED BODY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：安装体及其制造方法
公开(公告)号：US20100224986A1
公开(公告)日：2010-09-09
申请号：US12728615
申请日：2010-03-22
申请人： Toshiyuki Kojima , Seiichi Nakatani , Yoshihisa Yamashita , Takashi Kitae , Shingo Komatsu
发明人： Toshiyuki Kojima , Seiichi Nakatani , Yoshihisa Yamashita , Takashi Kitae , Shingo Komatsu
IPC分类号： H01L23/498
CPC分类号： H01L24/81 , H01L21/6835 , H01L23/4952 , H01L23/49524 , H01L23/5389 , H01L24/16 , H01L24/17 , H01L24/24 , H01L24/25 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/83 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16058 , H01L2224/16059 , H01L2224/16105 , H01L2224/16106 , H01L2224/16238 , H01L2224/17051 , H01L2224/171 , H01L2224/24011 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48247 , H01L2224/73204 , H01L2224/82001 , H01L2224/83385 , H01L2224/83886 , H01L2224/83888 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/19043 , H01L2924/3025 , H01L2224/16225 , H01L2924/00 , H01L2924/20752 , H01L2924/00015 , H01L2224/81805 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A mounted body (100) of the present invention includes: a semiconductor element (10) having a surface (10a) on which element electrodes (12) are formed and a rear surface (10b) opposing the surface (10a); and a mounting board (30) on which wiring patterns (35) each having an electrode terminal (32) are formed. The rear surface (10b) of the semiconductor element (10) is in contact with the mounting board (30), and the element electrodes (12) of the semiconductor element (10) are connected electrically to the electrode terminals (32) of the wiring pattern (35) formed on the mounting board (30) via solder connectors (20) formed of solder particles assembled into a bridge shape. With this configuration, fine pitch connection between the element electrodes of the semiconductor element and the electrode terminals of the mounting board becomes possible.
摘要翻译：本发明的安装体（100）包括：具有形成元件电极（12）的表面（10a）和与表面（10a）相对的后表面（10b）的半导体元件（10）。以及安装板（30），在其上形成有各自具有电极端子（32）的布线图案（35）。半导体元件（10）的后表面（10b）与安装板（30）接触，并且半导体元件（10）的元件电极（12）与电极端子（32）电连接通过由组装成桥形的焊料颗粒形成的焊料连接器（20）在安装板（30）上形成的布线图案（35）。利用这种结构，半导体元件的元件电极和安装板的电极端子之间的细间距连接成为可能。

79. 发明申请

US20100164061A1 SEMICONDUCTOR CHIP, SEMICONDUCTOR MOUNTING MODULE, MOBILE COMMUNICATION DEVICE, AND PROCESS FOR PRODUCING SEMICONDUCTOR CHIP 有权
标题翻译：半导体芯片，半导体安装模块，移动通信设备以及生产半导体芯片的工艺
公开(公告)号：US20100164061A1
公开(公告)日：2010-07-01
申请号：US12377076
申请日：2007-08-24
申请人： Koichi Hirano , Tetsuyoshi Ogura , Seiichi Nakatani
发明人： Koichi Hirano , Tetsuyoshi Ogura , Seiichi Nakatani
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L24/13 , H01G4/008 , H01G4/33 , H01G9/045 , H01G9/07 , H01G9/15 , H01L23/5223 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05548 , H01L2224/05647 , H01L2224/05671 , H01L2224/1131 , H01L2224/11831 , H01L2224/11901 , H01L2224/13022 , H01L2224/13124 , H01L2224/13139 , H01L2224/13155 , H01L2224/1358 , H01L2224/13624 , H01L2224/13644 , H01L2224/13655 , H01L2224/1379 , H01L2224/138 , H01L2224/16 , H01L2924/00013 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/12044 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/00014 , H01L2224/13099
摘要： A semiconductor chip comprising a capacitor capable of effectively controlling the voltage drop of an LSI is provided. A semiconductor substrate is provided with an element electrode having at least its surface constituted of an aluminum electrode. The surface of the aluminum electrode is roughened. An oxide film is provided on the aluminum electrode. A conductive film is provided on the oxide film. The aluminum electrode, oxide film and conductive film form a capacitor.
摘要翻译：提供了包括能够有效地控制LSI的电压降的电容器的半导体芯片。半导体衬底设置有至少其表面由铝电极构成的元件电极。铝电极的表面被粗糙化。在铝电极上设置氧化膜。在氧化膜上设置导电膜。铝电极，氧化膜和导电膜形成电容器。

80. 发明申请

US20100133664A1 MODULE AND MOUNTED STRUCTURE USING THE SAME 有权
标题翻译：使用相同的模块和安装结构
公开(公告)号：US20100133664A1
公开(公告)日：2010-06-03
申请号：US12651740
申请日：2010-01-04
申请人： Seiichi Nakatani , Tsutomu Mitani
发明人： Seiichi Nakatani , Tsutomu Mitani
IPC分类号： H01L23/552
CPC分类号： H05K1/02 , H01L23/3128 , H01L23/552 , H01L23/66 , H01L24/48 , H01L25/0657 , H01L25/105 , H01L25/18 , H01L2223/6677 , H01L2224/16225 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73207 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06558 , H01L2225/1005 , H01L2225/1023 , H01L2225/107 , H01L2924/00011 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/1532 , H01L2924/19041 , H01L2924/19104 , H01L2924/19105 , H01L2924/19106 , H01L2924/3025 , H05K1/181 , H05K2201/10098 , H05K2201/1053 , H01L2924/00012 , H01L2924/00 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A module that can not only achieve the reduction in size and manufacturing cost but also be impervious to noise due to electromagnetic waves, and a mounted structure using the same are provided. A module (1) includes a substrate (12) and a plurality of semiconductor packages (11a, 11b), each including a semiconductor chip (10), mounted on the substrate (12). Each of the plurality of semiconductor packages (11a, 11b) includes a first radio communication element (16) for transmitting and receiving a signal between the semiconductor chips (10) in the plurality of semiconductor packages (11a, 11b) by radio communication, and the first radio communication element (16) is constituted independently of the semiconductor chip (10).
摘要翻译：提供了一种模块，其不仅可以实现尺寸和制造成本的降低，而且还可以防止由电磁波引起的噪声，并且提供使用其的安装结构。模块（1）包括基板（12）和多个半导体封装（11a，11b），每个半导体封装包括安装在基板（12）上的半导体芯片（10）。多个半导体封装（11a，11b）中的每一个包括用于通过无线电通信在多个半导体封装（11a，11b）中的半导体芯片（10）之间发送和接收信号的第一无线电通信元件（16），以及第一无线电通信元件（16）独立于半导体芯片（10）构成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式