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    • 75. 发明申请
    • CIRCUIT FOR DETECTION OF CURRENT IN AN ELECTRIC CONDUCTOR TO CONTROL ELECTRONICALLY CONTROLLABLE TRIPPING DEVICES
    • 电路是否功率检测电动云台,用于控制电子设备的应税TRIP
    • WO1998013920A1
    • 1998-04-02
    • PCT/DE1997002213
    • 1997-09-24
    • SIEMENS AKTIENGESELLSCHAFTHOCHGRAEF, HolgerWEGENER, Mario
    • SIEMENS AKTIENGESELLSCHAFT
    • H02H03/08
    • G01R19/25H02H1/0007H02H1/0038H02H1/063H02H3/083
    • The invention relates to a circuit arrangement for detection of current in an electric conductor to control electronically controllable tripping devices, comprising a mains voltage supply device. The operating voltage produced by the mains voltage supply device is compared with a reference voltage and the tripping device is activated by a conventional voltage limit occurring during overload. The circuit contains a microprocessor device (MPE) for direct detection of current variables from secondary alternating current values of phase-windings (PH1,2,3) which can be connected to potential mains inputs (A1,2,3). The alternating currents can be evaluated by the microprocessor device (MPE) by means of a known reference voltage detection device (BSE) as calculated valuables that are to be treated. Such circuits can be used to control overload tripping devices in electricity supply installations.
    • 本发明涉及一种用于电流检测的电流导体的一个电路装置用于致动具有电源电压供给装置,其特征在于,通过与基准电压的电源电压供给装置产生的工作电压进行比较,电子可控制的释放装置和所述触发装置是可操作的由形成限制电压过电流的情况下连接。 该电路包括用于从所述电源电位输入端直接测定的当前变量的微处理器装置(MPE)(A1,2,3)第二相绕组的连接的交流电压的值(PH1,2,3),所述交变电压(使用已知Bezugsspannungsermittlungs- 可以评价所述微处理器装置(MPE)的装置(BSE))加工计算值。 这样的电路装置被用于在发电厂过电流跳闸装置的控制。
    • 80. 发明申请
    • DEVICE FOR REDUCING SHORT-CIRCUIT AMPLITUDE OF A DISCONNECTABLE NON-LATCHING MOS-CONTROLLED POWER SEMICONDUCTOR
    • 装置以降低关断的短幅度,非闭锁,MOS受控电力半目
    • WO1998012816A1
    • 1998-03-26
    • PCT/DE1997002020
    • 1997-09-10
    • SIEMENS AKTIENGESELLSCHAFTBRUCKMANN, Manfred
    • SIEMENS AKTIENGESELLSCHAFT
    • H03K17/082
    • H03K17/0828H03K17/6877
    • The invention concerns a device for reducing the short-circuit amplitude of a disconnectable, non-latching MOS-controlled power semiconductor (TL1) with a control unit presenting a driver stage (10) with two complementary transistors (T2, T3), a collector-emitter control (8) and a limiting circuit (6), that is placed between an input (12) and a reference potential ("-") of the driver stage (10). Said limiting circuit (6) is connected to an output (16) of the collector-emitter control (8) on the input side, which is interconnected with the collector connection (C) of the power semiconductor (TL1) on the input side by means of a decoupling diode (D1). The decoupling diode (D1) is connected by a resistance (R1) on the anode side with a positive terminal of a first control voltage source (UH1) of the driver stage. The invention foresees an additional transistor (T5) and a resistance (R5) . Said additional transistor (R5) and its collector-emitter section are connected electrically parallel to the base-emitter section of the switching transistor (T2) of the driver stage (10) and the resistance (R5) between the base and the emitter of said additional transistor (5). The control circuit resistance (RG) is bypassed by a diode. Thus, the known device for reducing a short-circuit amplitude of a disconnectable, non-latching, MOS-controlled power semiconductor (TL1) is improved in such a way, that its switching speed no longer changes.
    • 本发明涉及一种设备,用于减少关断的短路振幅,非闭锁,MOS控制的功率半导体(TL1)和具有驱动单元,所述驱动器级的两个互补型晶体管(T2,T3)(10),集电极 - 发射极的监测 (8)和连接的输入端(12)和基准电势(“ - ”)之间的限制电路(6)驱动器级(10)设置,所述限制电路(6)的输入侧到集电极 - 发射极的输出端(16) 被监控(8)是通过去耦二极管(D1),以连接至所述功率半导体(TDL1)的集电极端子(C)的装置上的输入侧连接的所述经由具有的正端子的电阻器(R1)的去耦二极管(D1)的阳极侧 驱动级(10)的第一控制电压源(UH1)相关联。 根据本发明的一个额外的晶体管(T5)和电阻器(R5)被提供,其中,该附加晶体管(T5),其电具有与所述接通晶体管(T2)的驱动级(10)和所述电阻器的基极 - 发射极通路平行它的集电极 - 发射极路径(R5 )(基极和所述附加晶体管T5)连接的发射极,并且所述控制电路电阻器(RG)通过一个二极管的装置之间(D4)被桥接。 因此,为了降低关断的短路振幅已知的装置中,非闭锁,MOS控制的功率半导体(TL1)提高,使得其开关速度不改变。