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71. 发明申请

WO1992006500A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO1992006500A1
公开(公告)日：1992-04-16
申请号：PCT/JP1991001346
申请日：1991-10-04
申请人： SEIKO EPSON CORPORATION , TAKENAKA, Kazuhiro
发明人： SEIKO EPSON CORPORATION
IPC分类号： H01L27/115
CPC分类号： H01L27/11502
摘要： In the structure of a memory in which capacitors using ferroelectric substances (109) are integrated on a semiconductor substrate, particularly in the structure of certain one of unit cells forming the memory, an electrode (110) of the ferroelectric capacitor and the source diffusion layer constituting a MOS transistor are connected by a wiring electrode (107). The drain diffusion layer constituting the MOS transistor is connected with a first wiring electrode (114) containing, e.g. Al as its main component. The other electrode (113) of the capacitor is used as a second wiring electrode, leaving as it is. A third wiring electrode (108) containing, e.g. Al as its main component is disposed in parallel with the second wiring electrode, and is connected with the first wiring electrode directly or via the second wiring electrode. Thereby, the memory is suited to larger scale integration, and able to operate at a high speed.
摘要翻译：在其中具有铁电材料（109）的电容器集成在半导体衬底上的存储器的结构中，特别是在构成存储器的某些单元电池的结构中，铁电电容器的电极（110）和层构成MOS晶体管的源极通过互连电极（107）连接。 MOS晶体管的漏极扩散层连接到包含例如Al作为主要成分的第一互连电极（114）。原样使用电容器的另一电极（113）作为第二互连电极。包含例如Al作为主要成分的第三互连电极（108）平行于第二互连电极安装并且直接或经由互连电极与第一互连电极连接。第二电极。因此，该存储器适用于高密度集成，可以高速运行。

72. 发明申请

WO1992006499A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO1992006499A1
公开(公告)日：1992-04-16
申请号：PCT/JP1991001281
申请日：1991-09-26
申请人： SEIKO EPSON CORPORATION , TAKENAKA, Kazuhiro
发明人： SEIKO EPSON CORPORATION
IPC分类号： H01L27/115
CPC分类号： H01L27/11502
摘要： In the structure of a memory in which capacitors using ferroelectric substances (105) are integrated on a semiconductor substrate (101), particularly in the structure of unit cells forming a memory, by connecting directly an upper electrode (107) out of electrodes (106, 107) constituting the capacitor with a diffusion layer (108) of high concentration constituting a MOS transistor, the memory is suited to larger scale integration.

73. 发明申请

WO1992002798A1 PRESSURE SENSOR 审中-公开
标题翻译：压力传感器
公开(公告)号：WO1992002798A1
公开(公告)日：1992-02-20
申请号：PCT/JP1991001049
申请日：1991-08-06
申请人： SEIKO EPSON CORPORATION , TAKENAKA, Kazuhiro
发明人： SEIKO EPSON CORPORATION
IPC分类号： G01L09/08
CPC分类号： G01L9/0073
摘要： A pressure sensor for converting a pressure into an electric signal, in which an Si membrane is formed on an Si substrate and a capacitor comprising a piezoelectric thin film is formed on the Si membrane. Further, any element of a resistor, diode and transistor are formed on the main surface of the Si substrate, and the output given from the capacitor is processed by the element on the Si substrate.
摘要翻译：一种用于将压力转换为电信号的压力传感器，其中，在Si衬底上形成Si膜，并且在Si膜上形成包括薄压电膜的电容器;此外，在Si衬底的主表面上形成电阻器，二极管和晶体管，并且电容器的输出由Si衬底上的元件处理。

74. 发明申请

WO1992002050A1 SEMICONDUCTOR DEVICE PROVIDED WITH FERROELECTRIC MATERIAL 审中-公开
标题翻译：具有电磁材料的半导体器件
公开(公告)号：WO1992002050A1
公开(公告)日：1992-02-06
申请号：PCT/JP1991000992
申请日：1991-07-24
申请人： SEIKO EPSON CORPORATION , TAKENAKA, Kazuhiro , FUJISAWA, Akira
发明人： SEIKO EPSON CORPORATION
IPC分类号： H01L27/115
CPC分类号： H01L27/11502
摘要： A structure of a ferroelectric capacitor C exists on a source region (23) between a gate electrode (22) and a local oxide film (26). The capacitor C has a ferroelectric film (29) which is sandwiched between an upper electrode (30) and a lower electrode (31), and is provided with a conductive film (32) for preventing a reaction between the lower electrode (31) and the source region (23). The film (32) is made of TiN, TiON , TiW or MoSi. Even if, for the purpose of changing the crystalline quality of the ferroelectric film (29), it is subjected to an oxygen annealing treatment aftr formimg the film (29), oxygen is blocked with the conductive film. Therefore, no silicon oxide film is formed on the interface between the source and the capacitor C, and the reduction of a contact resistance and the avoidance of a serial parasitic capacitance can be attained. Thereby, the degree of freedom of the region for forming the capacitor C is increased, and a large scale integrated circuit can be realized.

75. 发明申请

WO1992002043A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：半导体集成电路设备
公开(公告)号：WO1992002043A1
公开(公告)日：1992-02-06
申请号：PCT/JP1991000970
申请日：1991-07-19
申请人： SEIKO EPSON CORPORATION , SASAKI, Minoru
发明人： SEIKO EPSON CORPORATION
IPC分类号： H01L27/04
CPC分类号： H01L27/0214
摘要： A semiconductor integrated circuit device such as a memory chip, wherein the number of wirings has increased accompanying an increase of memory capacity. In the improvements of the reliability and access speed of a common bus line on which these wirings are provided, there is a problem of via holes provided in wirings of a second layer and connection parts used in the part where signal wirings and power supply wirings in the narrowed region of the common bus line interfere with each other. Therefore, in this invention, the main power supply wirings which branch to the common bus line are provided along and near the processing circuits of the signal wirings arranged on the common bus line. Thereby, the second layer wirings being wide in width and the plural viaholes every connection place can be formed, and a semiconductor integrated circuit having a high reliability and a high access speed is realized.

76. 发明申请

WO1992000603A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO1992000603A1
公开(公告)日：1992-01-09
申请号：PCT/JP1991000786
申请日：1991-06-11
申请人： SEIKO EPSON CORPORATION , ISHIYAMA, Hisanori
发明人： SEIKO EPSON CORPORATION
IPC分类号： H01L21/60
CPC分类号： H01L24/50 , H01L23/49572 , H01L23/4985 , H01L23/544 , H01L2223/54473 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01061 , H01L2924/01078 , H01L2924/01082 , H01L2924/12042 , H01L2924/14 , H01L2924/15173 , H01L2924/3025 , Y10T29/49121 , H01L2924/00
摘要： A finger by which a semiconductor integrated circuit provided with an electrode array of a high density can be mounted on a circuit board easily and safely as conventionally is realized. Further, a conductor pattern by which the mounting density of the integrated circuit can be improved in the case including this finger is also realized. For this purpose, the finger is constituted by a conductor pattern having a multilayer structure. The conductor patern comprises conductive layers and insulating ones isolating the conductive ones. Also, the conductive paths in the direction of thickness for interconnecting the layers can be formed, in addition to the wiring pattern of the finger through which the integrated circuit and the mounting board are connected. Thereby, the circuit board of high mounting density can be realized.

77. 发明申请

WO1991013427A1 METHOD OF GENERATING DOT SIGNAL CORRESPONDING TO CHARACTER PATTERN AND DEVICE THEREFOR 审中-公开
标题翻译：产生与特征图案及其器件相关的信号的方法
公开(公告)号：WO1991013427A1
公开(公告)日：1991-09-05
申请号：PCT/JP1991000261
申请日：1991-02-27
申请人： SEIKO EPSON CORPORATION , UCHINO, Atsushi
发明人： SEIKO EPSON CORPORATION
IPC分类号： G09G05/24
CPC分类号： G06T11/203 , G09G1/14 , Y10S345/947
摘要： A device for generating dot signals corresponding to a character pattern described only with straight lines from the outline information about the character pattern. The device has a unit (6) for determining the endpoints of the straight lines constituting the outline on the basis of the outline information. Receiving the information about the endpoints determined by the unit (6), a DDA calculating part (7) selects an endpoint from among the ones received and generates successively pieces of information each indicating a pair of points used for constituting two straight lines which extend from the selected endpoint toward the two points adjacent to the selected endpoint respectively. The information about the pairs of points is inputted into a straight line generating part (8). Here, straight lines comprising dot signals between paired points are generated. These dot signals correspond to the character pattern. In this way, dot signals corresponding to a character pattern described only with straight lines are obtained directly from the outline information.

78. 发明申请

WO1991007470A1 INK FOR USE IN INK JET RECORDING 审中-公开
标题翻译：墨水用于墨水记录
公开(公告)号：WO1991007470A1
公开(公告)日：1991-05-30
申请号：PCT/JP1990001516
申请日：1990-11-21
申请人： SEIKO EPSON CORPORATION , SHINOZUKA, Masakazu , NAKAMURA, Hiroto , KANBAYASHI, Kenichi , MARUYAMA, Yaeko , OYAMA, Noriko , ONISHI, Hiroyuki
发明人： SEIKO EPSON CORPORATION
IPC分类号： C09D11/02
CPC分类号： C09D11/36
摘要： An ink jet recording ink composition comprising, as indispensable components, a coloring component and a dispersion medium for maintaining the coloring component in a homogeneously dispersed state, characterized in that the coloring component is insoluble in the dispersion medium and dispersed in a particulate form in the dispersion medium, the particle diameter is 0.01 νm or more, the dispersion medium comprises a liquid having a surface tension of 50 dyn/cm or less at 25 °C and the dispersion medium separates from the coloring component as soon as the ink composition deposits on a recording material. This composition brings about no blotting and exhibits an excellent printing quality.

79. 发明申请

WO1991007282A1 INK JET RECORDING METHOD 审中-公开
标题翻译：喷墨记录方法
公开(公告)号：WO1991007282A1
公开(公告)日：1991-05-30
申请号：PCT/JP1990001484
申请日：1990-11-15
申请人： SEIKO EPSON CORPORATION , HAYASHI, Hiroko
发明人： SEIKO EPSON CORPORATION
IPC分类号： B41J02/01
CPC分类号： C09D11/30 , B41J2/175
摘要： This invention relates to an ink jet recording method having improved printing stability characterized in that at least part of an ink supply system member in an ink jet recording apparatus is made of a plastic material and an ink composition having a contact angle range of 10 to 60° relative to the plastic material is used as a supply ink for the ink jet recording apparatus.

80. 发明申请

WO1990003055A1 LIGHT EMITTING DEVICE AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO1990003055A1
公开(公告)日：1990-03-22
申请号：PCT/JP1989000852
申请日：1989-08-22
申请人： SEIKO EPSON CORPORATION , IWANO, Hideaki , YAMAZAKI, Yasuji , TERAISHI, Katsuhiro
发明人： SEIKO EPSON CORPORATION
IPC分类号： H01S03/18
CPC分类号： H01S5/026 , G02F1/377 , H01S3/109 , H01S5/0604 , H01S5/1025 , H01S5/1028 , H01S5/2231 , H01S5/3211
摘要： Provision is made of at least a layer-like laser beam generation portion and a laminar second harmonic wave generation optical waveguide on the same semiconductor substrate, the laser beam generation portion and the second harmonic wave generation optical waveguide being arranged substantially on the same plane. Therefore, there is obtained a light emitting device which is very small in size and which produces blue light with little optical loss.

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