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    • 73. 发明申请
    • RADIOGRAPHIC DETECTOR INCLUDING TRAP OCCUPANCY CHANGE MONITOR AND FEEDBACK, IMAGING APPARATUS AND METHODS USING THE SAME
    • 放射线检测器,包括捕捉监视器和反馈,成像装置和使用它的方法
    • US20130001426A1
    • 2013-01-03
    • US13173384
    • 2011-06-30
    • Timothy J. TredwellMark E. Shafer
    • Timothy J. TredwellMark E. Shafer
    • H01L27/146
    • G01T1/2018H04N5/3205H04N5/325H04N5/3597
    • Embodiments of radiographic imaging systems; digital radiography detectors and methods for using the same can monitor and/or control trap occupancy levels in photosensors of radiographic sensors (e.g., DR FPDs). In exemplary radiographic imaging apparatus embodiments, monitoring of trap occupancy or change in trap occupancy of the photosensor can determine whether an imaging array or detector panel has reached a stable operating point. In another embodiment, trap occupancy information can be used (a) to enable a generator (e.g., x-ray source) for a radiographic exposure and/or (b) to adjust to or to maintain a change in trap occupancy level at pre-determined set-point or to adjust to or maintain a change in trap occupancy level within a prescribed range (e.g., using clock signals and bias voltages applied to the photosensor).
    • 射线成像系统的实施例; 数字放射线检测器及其使用方法可以监测和/或控制放射线照相传感器(例如,DR FPD)的光电传感器中的陷阱占有率。 在示例性放射线照相成像设备实施例中,监视光束传感器的陷阱占有率或陷阱占有率的变化可以确定成像阵列或检测器面板是否已经达到稳定的工作点。 在另一个实施例中,可以使用陷阱占用信息(a)使得发射器(例如,x射线源)能够用于放射照相曝光和/或(b)调整到或保持预置的陷阱占有率水平的变化, 或者在规定范围内(例如,使用施加到光电传感器的时钟信号和偏置电压)来调整或维持陷阱占有率的变化。
    • 77. 发明申请
    • DIGITAL RADIOGRAPHY IMAGER WITH BURIED INTERCONNECT LAYER IN SILICON-ON-GLASS AND METHOD OF FABRICATING SAME
    • 硅胶玻璃中的带有互连连接层的数字放射成像仪及其制造方法
    • US20100320514A1
    • 2010-12-23
    • US12487678
    • 2009-06-19
    • Timothy J. TredwellJackson Lai
    • Timothy J. TredwellJackson Lai
    • H01L31/00H01L31/10
    • H01L27/14692H01L27/14609H01L27/14689
    • A method of forming an imaging array includes providing a single crystal silicon substrate having an internal separation layer, forming a patterned conductive layer proximate a first side of the single crystal silicon substrate, forming an electrically conductive layer on the first side of the single crystal silicon substrate and in communication with the patterned conductive layer, securing the single crystal silicon substrate having the patterned conductive layer and electrically conductive layer formed thereon to a glass substrate with the first side of the single crystal silicon substrate proximate the glass substrate, separating the single crystal silicon substrate at the internal separation layer to create an exposed surface opposite the first side of the single crystal silicon substrate and forming an array comprising a plurality of photosensitive elements and readout elements on the exposed surface.
    • 一种形成成像阵列的方法包括提供具有内部分离层的单晶硅衬底,在单晶硅衬底的第一侧附近形成图案化的导电层,在单晶硅的第一面上形成导电层 衬底并与图案化导电层连通,将具有图案化导电层的单晶硅衬底和其上形成的导电层固定在玻璃衬底上,使单晶硅衬底的第一侧靠近玻璃衬底,将单晶 硅衬底,以产生与单晶硅衬底的第一侧相对的暴露表面,并且在暴露表面上形成包括多个光敏元件和读出元件的阵列。
    • 78. 发明申请
    • IMAGING ARRAY WITH DUAL HEIGHT SEMICONDUCTOR AND METHOD OF MAKING SAME
    • 具有双重高度半导体的成像阵列及其制造方法
    • US20100301443A1
    • 2010-12-02
    • US12474332
    • 2009-05-29
    • Timothy J. TredwellJackson Lai
    • Timothy J. TredwellJackson Lai
    • H01L31/10H01L31/18
    • H01L31/1136H01L27/14601H01L27/14643H01L27/14683
    • A method of fabricating an imaging array includes providing a single crystal silicon substrate and bonding the single crystal silicon substrate to an insulating substrate. One or more portions of an exposed surface of the single-crystal silicon substrate are removed to form a pattern of first areas having a first height measured from the insulating substrate and second areas having a second height measured from the insulating substrate. Photosensitive elements are formed on the first areas and readout elements are formed on the second areas. The single-crystal silicon substrate is treated by hydrogen implantation to form an internal separation boundary and a portion of the single-crystal silicon substrate is removed at the internal separation boundary to form the exposed surface.
    • 制造成像阵列的方法包括提供单晶硅衬底并将单晶硅衬底接合到绝缘衬底上。 去除单晶硅衬底的暴露表面的一个或多个部分以形成从绝缘衬底测量的具有第一高度的第一区域的图案,并且从绝缘衬底测量出具有第二高度的第二区域。 感光元件形成在第一区域上,读出元件形成在第二区域上。 通过氢注入处理单晶硅衬底以形成内部分离边界,并且在内部分离边界处去除一部分单晶硅衬底以形成暴露表面。