专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US07791845B2 Tunneling magnetoresistive sensor having a high iron concentration free layer and an oxides of magnesium barrier layer 有权
标题翻译：具有高铁浓度自由层和镁阻隔层氧化物的隧道磁阻传感器
公开(公告)号：US07791845B2
公开(公告)日：2010-09-07
申请号：US11645462
申请日：2006-12-26
申请人： Daniele Mauri , Alexander M. Zeltser
发明人： Daniele Mauri , Alexander M. Zeltser
IPC分类号： G11B5/39 , G11C11/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： An improved formulation for free layers in MTJ sensors is disclosed. Optimized results of the prior art suggest free layer iron concentrations less than 20 atomic % give the best performance. The present invention discloses improved TMR ratio, Hce, and λ performance for high free layer iron concentrations between about 70 and 91.5 atomic %, when compared to the prior art.
摘要翻译：公开了MTJ传感器中自由层的改进配方。现有技术的优化结果表明，低于20原子％的自由层铁浓度具有最佳性能。与现有技术相比，本发明公开了对于高约70至91.5原子％的高自由层铁浓度的改进的TMR比，Hce和λ性能。

72. 发明授权

US07751156B2 Dual-layer free layer in a tunneling magnetoresistance (TMR) element 有权
标题翻译：隧道磁阻（TMR）元件中的双层自由层
公开(公告)号：US07751156B2
公开(公告)日：2010-07-06
申请号：US11536891
申请日：2006-09-29
申请人： Daniele Mauri , Satoshi Shigematsu , Alexander M. Zeltser
发明人： Daniele Mauri , Satoshi Shigematsu , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/08 , H01L43/12
摘要： Tunneling magnetoresistive (TMR) elements and associated methods of fabrication are disclosed. In one embodiment, the TMR element includes a ferromagnetic pinned layer structure, a tunnel barrier layer, and a free layer having a dual-layer structure. In one embodiment, the free layer includes a first amorphous free layer and a second amorphous free layer. In another embodiment, the free layer includes a first polycrystalline free layer and a second amorphous free layer. The compositions of the first free layer and the second free layer of the dual layer structure differ to provide improved TMR performance and controlled magnetostriction. In one example, the first free layer may have a composition optimized for TMR while the second free layer may have a composition optimized for magnetostriction.
摘要翻译：公开了隧道磁阻（TMR）元件和相关的制造方法。在一个实施例中，TMR元件包括铁磁钉扎层结构，隧道势垒层和具有双层结构的自由层。在一个实施例中，自由层包括第一无定形自由层和第二无定形自由层。在另一个实施方案中，自由层包括第一多晶自由层和第二无定形自由层。双层结构的第一自由层和第二自由层的组成不同，以提供改进的TMR性能和受控的磁致伸缩。在一个实例中，第一自由层可以具有针对TMR优化的组成，而第二自由层可以具有针对磁致伸缩优化的组成。

73. 发明授权

US07488609B1 Method for forming an MgO barrier layer in a tunneling magnetoresistive (TMR) device 有权
标题翻译：在隧道磁阻（TMR）器件中形成MgO阻挡层的方法
公开(公告)号：US07488609B1
公开(公告)日：2009-02-10
申请号：US11941763
申请日：2007-11-16
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11C11/15 , H01F10/3254 , H01F10/3295 , H01F41/307
摘要： A method of forming a barrier layer of a tunneling magnetoresistive (TMR) device by forming first and second MgO barrier layers by different sputtering methods, but in the same sputtering system module. A first magnesium-oxide (MgO) barrier layer is formed over one of the TMR device's ferromagnetic layers by a DC magnetron sputter deposition from an Mg target in an oxygen environment. In the same module, a second MgO barrier layer is formed over the first MgO film by an RF sputter deposition from an MgO target and in an environment free of oxygen. Prior to the formation of the first MgO barrier layer, an optional Mg protection layer can be deposited on the ferromagnetic layer and oxidized by a first optional oxygen treatment. After deposition of the first MgO barrier layer, a second optional oxygen treatment may be conducted. After deposition of the second MgO barrier layer, a second Mg protection layer may be deposited by DC sputter deposition, followed by an optional third oxygen treatment.
摘要翻译：通过用不同的溅射方法，但在相同的溅射系统模块中形成第一和第二MgO阻挡层，形成隧道磁阻（TMR）器件的势垒层的方法。通过在氧环境中的Mg靶的DC磁控溅射沉积，在TMR器件的铁磁层之一上形成第一氧化镁（MgO）阻挡层。在相同的模块中，通过来自MgO靶的RF溅射沉积和在不含氧的环境中，在第一MgO膜上形成第二MgO阻挡层。在形成第一MgO阻挡层之前，可以在铁磁层上沉积可选的Mg保护层，并通过第一任选的氧处理进行氧化。在沉积第一MgO阻挡层之后，可以进行第二任选的氧处理。在沉积第二MgO阻挡层之后，可以通过DC溅射沉积沉积第二Mg保护层，随后进行任选的第三氧处理。

74. 发明授权

US07413636B2 Method for manufacturing a dual spin valve sensor having a longitudinal bias stack 失效
标题翻译：制造具有纵向偏压叠层的双自旋阀传感器的方法
公开(公告)号：US07413636B2
公开(公告)日：2008-08-19
申请号：US10692968
申请日：2003-10-24
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： C23C14/34
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3935 , G11B5/3954 , G11B5/3967 , G11B2005/0008
摘要： A dual spin valve (SV) sensor is provided with a longitudinal bias stack sandwiched between a first SV stack and a second SV stack. The longitudinal bias stack comprises an antiferromagnetic (AFM) layer sandwiched between first and second ferromagnetic layers. The first and second SV stacks comprise antiparallel (AP)-pinned layers pinned by AFM layers made of an AFM material having a higher blocking temperature than the AFM material of the bias stack allowing the AP-pinned layers to be pinned in a transverse direction and the bias stack to be pinned in a longitudinal direction. The demagnetizing fields of the two AP-pinned layers cancel each other and the bias stack provides flux closures for the sense layers of the first and second SV stacks.
摘要翻译：双自旋阀（SV）传感器设置有夹在第一SV堆叠和第二SV堆叠之间的纵向偏置堆叠。纵向偏置堆叠包括夹在第一和第二铁磁层之间的反铁磁（AFM）层。第一和第二SV堆叠包括由具有比偏置堆叠的AFM材料更高的阻挡温度的AFM材料制成的AFM层钉住的反平行（AP） - 镀层，其允许AP钉扎层在横向上被钉扎，偏置堆叠沿纵向方向固定。两个AP钉扎层的去磁场彼此抵消，并且偏置堆叠为第一和第二SV堆叠的感测层提供磁通闭合。

75. 发明授权

US07408747B2 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing 失效
标题翻译：增强型反并联固定传感器采用薄钌间隔和高磁场退火
公开(公告)号：US07408747B2
公开(公告)日：2008-08-05
申请号：US11048406
申请日：2005-02-01
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

76. 发明申请

US20080137236A1 Magnetic read head having increased electron exchange 失效
标题翻译：磁读头具有增加的电子交换
公开(公告)号：US20080137236A1
公开(公告)日：2008-06-12
申请号：US11638271
申请日：2006-12-12
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Brian R. York
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Brian R. York
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163
摘要： A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1-x)(x=0.22-0.5) alloys, Ru(x)Cr(1-x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.
摘要翻译：公开了CIP或CPP配置的磁头，其具有由于与AFM层的电子交换增加而具有强固定的铁磁层的读取传感器。读取传感器包括下部种子层，其材料选自由Ta，NiFeCr，NiFeCoCr，NiFe，Cu，Ta / NiFeCr，Ta / NiFeCr / NiFe，Ta / Ru和Ta / NiFeCoCr组成的组，以及上部种子层其中上部种子层材料选自Ru，Cu，NiFe，Cu（x）Au（1-x）（x = 0.22-0.5）合金，Ru（x）Cr（1-x）（x = 0.1-0.5）合金，NiFeCr和NiFeCoCr。在上种籽层上形成AFM层，在AFM层上形成铁磁性钉扎层。 AFM层和钉扎层之间的交换耦合能量Jk超过1.3erg / cm2。还公开了一种由于增加的电子交换而制造包括具有强固定铁磁层的读头传感器的磁头的方法。

77. 发明申请

US20080080101A1 DUAL-LAYER FREE LAYER IN A TUNNELING MAGNETORESISTANCE (TMR) ELEMENT 有权
标题翻译：隧道隧道（TMR）元件中的双层自由层
公开(公告)号：US20080080101A1
公开(公告)日：2008-04-03
申请号：US11536891
申请日：2006-09-29
申请人： Daniele Mauri , Satoshi Shigematsu , Alexander M. Zeltser
发明人： Daniele Mauri , Satoshi Shigematsu , Alexander M. Zeltser
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/08 , H01L43/12
摘要： Tunneling magnetoresistive (TMR) elements and associated methods of fabrication are disclosed. In one embodiment, the TMR element includes a ferromagnetic pinned layer structure, a tunnel barrier layer, and a free layer having a dual-layer structure. In one embodiment, the free layer includes a first amorphous free layer and a second amorphous free layer. In another embodiment, the free layer includes a first polycrystalline free layer and a second amorphous free layer. The compositions of the first free layer and the second free layer of the dual layer structure differ to provide improved TMR performance and controlled magnetostriction. In one example, the first free layer may have a composition optimized for TMR while the second free layer may have a composition optimized for magnetostriction.
摘要翻译：公开了隧道磁阻（TMR）元件和相关的制造方法。在一个实施例中，TMR元件包括铁磁钉扎层结构，隧道势垒层和具有双层结构的自由层。在一个实施例中，自由层包括第一无定形自由层和第二无定形自由层。在另一个实施方案中，自由层包括第一多晶自由层和第二无定形自由层。双层结构的第一自由层和第二自由层的组成不同，以提供改进的TMR性能和受控的磁致伸缩。在一个实例中，第一自由层可以具有针对TMR优化的组成，而第二自由层可以具有针对磁致伸缩优化的组成。

78. 发明申请

US20060171083A1 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing 失效
标题翻译：增强型反并联固定传感器采用薄钌间隔和高磁场退火
公开(公告)号：US20060171083A1
公开(公告)日：2006-08-03
申请号：US11048406
申请日：2005-02-01
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

79. 发明申请

US20060042929A1 Method for reactive sputter deposition of an ultra-thin metal oxide film 审中-公开
标题翻译：超薄金属氧化物膜的反应溅射沉积方法
公开(公告)号：US20060042929A1
公开(公告)日：2006-03-02
申请号：US10927888
申请日：2004-08-26
申请人： Daniele Mauri
发明人： Daniele Mauri
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： H01L43/12 , C23C14/0042 , C23C14/0089 , C23C14/081 , G11B5/127 , G11B5/39
摘要： The invention is a method for reactive sputter deposition of an ultra-thin film of an oxide of a first metal onto a film of a second metal. The method can be part of the fabrication of a magnetic tunnel junction (MTJ) with the metal oxide film becoming the tunnel barrier of the MTJ. The metal oxide film is reactively sputter deposited in the presence of reactive oxygen gas (O2) from a target consisting essentially of the first metal, with the sputtering occurring in the “high-voltage” state to assure that deposition occurs with the target in its metallic mode, i.e., no or minimal oxidation. When the metal oxide film is for a MTJ tunnel barrier, then the target is formed of a metal of Al, Ti, Ta, Y, Ga or In; an alloy of two or more of these metals; or an alloy of one or more of these metals with Mg; and the film of the second metal is an iron-containing film, typically a film of Fe or a CoFe alloy.
摘要翻译：本发明是将第一金属的氧化物的超薄膜反应溅射沉积到第二金属的膜上的方法。该方法可以是金属氧化物膜成为MTJ隧道势垒的磁隧道结（MTJ）的制造的一部分。在基本由第一金属组成的靶上，在活性氧气（O 2 O 2）存在下，金属氧化物膜被溅射沉积，溅射以“高电压”状态发生，以确保目标在其金属模式中发生沉积，即没有或最小的氧化。当金属氧化物膜用于MTJ隧道势垒时，靶由Al，Ti，Ta，Y，Ga或In的金属形成; 这些金属中的两种或更多种的合金; 或这些金属中的一种或多种与Mg的合金; 并且第二金属的膜是含铁膜，通常是Fe或CoFe合金的膜。

80. 发明授权

US06876525B2 Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process 失效
标题翻译：具有缝合纵向偏置叠层的巨磁电阻传感器及其制造工艺
公开(公告)号：US06876525B2
公开(公告)日：2005-04-05
申请号：US10229491
申请日：2002-08-27
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5/012 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/32 , H01F41/30
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/012 , G11B5/3116 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046
摘要： A giant magnetoresistance (GMR) magnetic head that includes a GMR read sensor with a stitched longitudinal bias (LB) stack. The GMR read sensor includes seed, pinning, pinned, spacer, sense and cap layers in a read region, and its seed and pinning layers are extended into two side regions. The LB stack is fabricated on the pinning layer in the two side regions and includes separation, seed and LB layers. The separation layer, preferably made of an amorphous film, separates the pinning layer from the seed and LB layers and thereby prevents unwanted crystalline effects of the pinning layer. Monolayer photoresist patterning and chemical mechanical polishing may be incorporated into the fabrication process of the GMR head to attain uniform thicknesses of the separation, seed and LB layers, and to align the midplane of the LB layer at the same horizontal level as the midplane of the sense layer.
摘要翻译：一种巨磁阻（GMR）磁头，其包括具有缝合纵向偏置（LB）堆叠的GMR读取传感器。 GMR读取传感器包括读取区域中的种子，钉扎，固定，间隔物，感测层和盖层，并且其种子和钉扎层延伸到两个侧面区域。 LB堆叠制造在两侧区域的钉扎层上，包括分离，种子和LB层。优选由非晶膜制成的分离层将钉扎层与种子和LB层分开，从而防止钉扎层的不期望的结晶效应。可以将单层光致抗蚀剂图案化和化学机械抛光结合到GMR头的制造工艺中，以获得分离，种子和LB层的均匀厚度，并且将LB层的中平面对准在与感觉层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式