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71. 发明申请

US20090151633A1 METHOD AND APPARATUS FOR GENERATING A PRECURSOR FOR A SEMICONDUCTOR PROCESSING SYSTEM 有权
标题翻译：用于生成半导体加工系统的前驱体的方法和装置
公开(公告)号：US20090151633A1
公开(公告)日：2009-06-18
申请号：US12371138
申请日：2009-02-13
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C23C16/54
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.
摘要翻译：本文描述的实施例涉及用于产生半导体处理系统的前体的装置。在一个实施例中，描述了在气相沉积工艺期间产生前体气体的装置。该装置包括容纳盖和底部之间的内部容积的容器，设置在盖上的气体入口和气体出口，与底部相连并从内部容积的下部区域延伸到上部区域的多个筒仓，以及包含在罐的下部区域内的氯浓度为约5ppm以下的钽前体。

72. 发明授权

US07494908B2 Apparatus for integration of barrier layer and seed layer 有权
标题翻译：用于整合势垒层和种子层的装置
公开(公告)号：US07494908B2
公开(公告)日：2009-02-24
申请号：US11749064
申请日：2007-05-15
申请人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
发明人： Hua Chung , Ling Chen , Jick Yu , Mei Chang
IPC分类号： H01L21/3205
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/165 , C23C14/3414 , C23C16/045 , C23C16/34 , C23C16/45525 , H01L21/2855 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L2221/1089 , H01L2924/0002 , Y10S438/903 , H01L2924/00
摘要： A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.
摘要翻译：提供了一种用于处理衬底的系统，其包括用于沉积包含钽的阻挡层的至少一个原子层沉积（ALD）室和用于在阻挡层上沉积金属籽晶层的至少一个物理气相沉积（PVD）金属种子室。所述至少一个ALD室可以与提供含钽化合物和第二前体源的第一前体源流体连通。在一个实例中，含钽化合物是有机金属钽前体，例如PDMAT。在另一个实例中，第二前体源含有氮前体，例如氨。 PDMAT的氯浓度可以为约100ppm以下，优选为约30ppm以下，更优选为约5ppm以下。在一些实例中，PVD金属种子室用于沉积含铜金属种子层。

73. 发明申请

US20080274279A1 NOBLE METAL LAYER FORMATION FOR COPPER FILM DEPOSITION 失效
标题翻译：铜箔沉积物的金属层形成
公开(公告)号：US20080274279A1
公开(公告)日：2008-11-06
申请号：US12170454
申请日：2008-07-10
申请人： MEI CHANG , Ling Chen
发明人： MEI CHANG , Ling Chen
IPC分类号： C23C16/06
CPC分类号： C23C16/18 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76873 , H01L21/76874
摘要： Embodiments described herein relate to depositing a cobalt-containing layer by a cyclical deposition process while forming interconnects on a substrate. In one embodiment, a method for forming an interconnect structure is provided which includes depositing a tungsten-containing barrier layer over an exposed contact metal surface within an aperture formed in an insulating material disposed on a substrate, forming a cobalt-containing layer on the tungsten-containing barrier layer using a cyclical deposition process by sequentially exposing the substrate to a cobalt precursor gas and a silicon reducing gas, wherein the cobalt precursor gas contains a cobalt precursor having a cyclopentadienyl ligand, and depositing a copper material on the cobalt-containing layer.
摘要翻译：本文所述的实施例涉及通过循环沉积工艺沉积含钴层，同时在衬底上形成互连。在一个实施例中，提供一种用于形成互连结构的方法，其包括在形成在设置在基板上的绝缘材料形成的孔内的暴露的接触金属表面上沉积含钨阻挡层，在钨上形成含钴层使用循环沉积工艺通过将基底暴露于钴前体气体和还原性还原气体，其中钴前体气体包含具有环戊二烯基配体的钴前体，并且在含钴层上沉积铜材料。

74. 发明授权

US07422637B2 Processing chamber configured for uniform gas flow 失效
标题翻译：处理室配置为均匀气流
公开(公告)号：US07422637B2
公开(公告)日：2008-09-09
申请号：US11552727
申请日：2006-10-25
申请人： Vincent Ku , Ling Chen , Howard Grunes , Hua Chung
发明人： Vincent Ku , Ling Chen , Howard Grunes , Hua Chung
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45544 , C23C16/4409 , C23C16/4412 , C23C16/45521 , C23C16/4585
摘要： An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.
摘要翻译：提供了一种在处理室中进行均匀气体流动的装置和方法。在一个实施例中，一种装置是一种边缘环，其包括具有从其突出的环形密封件的环形主体。密封件联接到环形体的与适于安置在基板支撑件上的一侧相对的一侧。在另一个实施例中，提供了一种处理系统，其包括室主体，盖，衬底支撑件和多个流量控制孔。盖子设置在室主体上并且与其限定内部容积。衬底支撑件设置在内部容积中并且至少部分地限定具有盖子的处理区域。流量控制孔布置在基板支撑件和盖子之间。流量控制孔适于控制离开处理区域的气体流。

75. 发明申请

US20080139729A1 Nanocomposites and Process for their Production 审中-公开
标题翻译：纳米复合材料及其生产工艺
公开(公告)号：US20080139729A1
公开(公告)日：2008-06-12
申请号：US11632004
申请日：2004-07-14
申请人： Ke Wang , Ling Chen , Chaobin He , Jingshen Wu
发明人： Ke Wang , Ling Chen , Chaobin He , Jingshen Wu
IPC分类号： C08K3/34
CPC分类号： C01B33/44
摘要： The present invention relates to a process of forming a nanocomposite. The process comprises the steps of treating pristine clay with water in order to swell the clay, exchanging the water with an organic solvent while still maintaining the clay in a swollen state, treating the swollen clay with a modifier and then mixing the treated clay with a substance selected from the group consisting of monomers, oligomers and polymers and combinations thereof. Where necessary, the substance is polymerised and the solvent is being removed either prior to, during or after the polymerization.
摘要翻译：本发明涉及形成纳米复合材料的方法。该方法包括以下步骤：用水处理原始粘土以膨胀粘土，用有机溶剂交换水，同时仍然保持粘土处于膨胀状态，用改性剂处理溶胀的粘土，然后将处理过的粘土与选自单体，低聚物和聚合物的组合物及其组合。必要时，物质被聚合，溶剂在聚合之前，期间或之后被除去。

76. 发明申请

US20070270301A1 Thermal method for fabricating a hydrogen separation membrane on a porous substrate 失效
标题翻译：在多孔基材上制造氢分离膜的热法
公开(公告)号：US20070270301A1
公开(公告)日：2007-11-22
申请号：US11418957
申请日：2006-05-05
申请人： Sun-Ju Song , Tae Lee , Ling Chen , Stephen Dorris , Uthamalingam Balachandran
发明人： Sun-Ju Song , Tae Lee , Ling Chen , Stephen Dorris , Uthamalingam Balachandran
IPC分类号： C04B38/00
CPC分类号： C04B38/0635 , B01D53/228 , B01D67/0041 , B01D67/0058 , B01D71/024 , B01D2256/16 , B01D2323/18 , B22F3/1134 , B22F2998/00 , B22F2998/10 , C01B3/505 , C01B2203/0465 , C04B35/50 , C04B38/08 , C04B2111/00267 , C04B2111/00413 , C04B2111/00801 , C04B2235/3215 , C04B2235/3225 , C04B2235/3229 , C04B2235/3279 , C22C2202/04 , Y10T428/249981 , C04B35/01 , C04B35/48 , C04B35/505 , B22F2207/01 , B22F3/1017 , B22F2201/013
摘要： A thermal method of making a hydrogen permeable composition is disclosed. A mixture of metal oxide powder and ceramic oxide powder and optionally a pore former is formed and pressed to form an article. The article is dried at elevated temperatures and then sintered in a reducing atmosphere to provide a dense hydrogen permeable portion near the surface of the sintered mixture. The dense hydrogen permeable portion has a higher initial concentration of metal than the remainder of the sintered mixture and is present in the range of from about 20 to about 80 percent by volume of the dense hydrogen permeable portion.
摘要翻译：公开了制造氢可渗透组合物的热法。形成金属氧化物粉末和陶瓷氧化物粉末和任选的成孔剂的混合物并压制以形成制品。将制品在升高的温度下干燥，然后在还原气氛中烧结，以在烧结混合物的表面附近提供致密的氢气渗透部分。致密的氢气渗透部分具有比烧结混合物的其余部分更高的金属初始浓度，并且其存在的浓氢可渗透部分的约20至约80体积％。

77. 发明授权

US07270709B2 Method and apparatus of generating PDMAT precursor 有权
标题翻译：生成PDMAT前体的方法和装置
公开(公告)号：US07270709B2
公开(公告)日：2007-09-18
申请号：US11119681
申请日：2005-05-02
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B21/02
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.
摘要翻译：用于填充衬底中的特征的前体和方法。该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm杂质的五（二甲基氨基）钽形成。该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。前体通常包括具有小于约5ppm杂质的五（二甲基氨基）钽。在与加热元件耦合的罐中产生前体，其配置成减少杂质的形成。

78. 发明授权

US07244683B2 Integration of ALD/CVD barriers with porous low k materials 有权
标题翻译： ALD / CVD屏障与多孔低k材料的集成
公开(公告)号：US07244683B2
公开(公告)日：2007-07-17
申请号：US10741422
申请日：2003-12-19
申请人： Hua Chung , Nikolaos Bekiaris , Christophe Marcadal , Ling Chen
发明人： Hua Chung , Nikolaos Bekiaris , Christophe Marcadal , Ling Chen
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/02063 , H01L21/28556 , H01L21/28562 , H01L21/31116 , H01L21/76802 , H01L21/76814 , H01L21/76838 , H01L21/76873 , H01L21/76876
摘要： A method for processing substrates is provided. The method includes depositing and etching a low k dielectric layer on a substrate, pre-cleaning the substrate with a plasma, and depositing a barrier layer on the substrate. Pre-cleaning the substrate minimizes the diffusion of the barrier layer into the low k dielectric layer and/or enhances the deposition of the barrier layer.
摘要翻译：提供了一种处理衬底的方法。该方法包括沉积和蚀刻基底上的低k电介质层，用等离子体预清洁衬底，以及在衬底上沉积阻挡层。预清洁衬底使阻挡层向低k电介质层的扩散最小化和/或增强阻挡层的沉积。

79. 发明申请

US20070077257A1 Enhanced first generation adenovirus vaccines expressing condon optimized HIV1-Gag, Pol, Nef and modifications 审中-公开
标题翻译：增强的第一代腺病毒疫苗表达宽带优化的HIV1-Gag，Pol，Nef和修饰
公开(公告)号：US20070077257A1
公开(公告)日：2007-04-05
申请号：US11604553
申请日：2006-11-27
申请人： Emilio Emini , Rima Youil , Andrew Bett , Ling Chen , David Kaslow , John Shiver , Timothy Toner , Danilo Casimiro
发明人： Emilio Emini , Rima Youil , Andrew Bett , Ling Chen , David Kaslow , John Shiver , Timothy Toner , Danilo Casimiro
IPC分类号： A61K39/00 , A61K39/12
CPC分类号： A61K39/21 , A61K39/12 , A61K2039/5256 , A61K2039/53 , A61K2039/545 , A61K2039/55555 , C07K14/005 , C12N7/00 , C12N2710/10343 , C12N2710/10351 , C12N2740/16222 , C12N2740/16234 , C12N2740/16322 , C12N2740/16334
摘要： First generation adenoviral vectors and-recombinant adenovirus-based HIV vaccines which contain HIV-1 gag, HIV-1 pol and/or HIV-1 nef polynucleotide pharmaceutical products, and biologically relevant modifications thereof are described. The adenovirus vaccines, when directly introduced into living vertebrate tissue, express the relevant proteins, inducing a cellular immune response which specifically recognizes HIV-1. The exemplified polynucleotides of the present invention are synthetic DNA molecules encoding HIV-1 Gag, HIV-1 Pol, HIV-1 Nef, and derivatives thereof. The adenoviral vaccines of the present invention, alone or in combination, will offer a prophylactic advantage to previously uninfected individuals and/or provide a therapeutic effect by reducing viral load levels within an infected individual, thus prolonging the asymptomatic phase of HIV-1 infection.
摘要翻译：描述了含有HIV-1 gag，HIV-1 pol和/或HIV-1 nef多核苷酸药物产品的第一代腺病毒载体和基于重组腺病毒的HIV疫苗及其生物学相关的修饰。当直接引入活的脊椎动物组织中时，腺病毒疫苗表达相关蛋白质，诱导特异性识别HIV-1的细胞免疫应答。本发明的示例性多核苷酸是编码HIV-1Gag，HIV-1 Pol，HIV-1 Nef的合成DNA分子及其衍生物。本发明的单独或组合的腺病毒疫苗将对先前未感染的个体提供预防优势，和/或通过减少感染个体内的病毒载量水平提供治疗效果，从而延长HIV-1感染的无症状期。

80. 发明申请

US20070067609A1 Method and apparatus for generating a precursor for a semiconductor processing system 有权
标题翻译：用于产生半导体处理系统的前体的方法和装置
公开(公告)号：US20070067609A1
公开(公告)日：2007-03-22
申请号：US10590448
申请日：2004-05-27
申请人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： G06F15/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/4481 , H01L21/28562 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis(dimethylamido)tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
摘要翻译：本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。该装置包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

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