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71. 发明专利

JPH03139885A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPH03139885A
公开(公告)日：1991-06-14
申请号：JP27924389
申请日：1989-10-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369 , H04N5/372
摘要： PURPOSE:To prevent the diffusion of aluminum to the photoelectric transfer film and the deterioration of the photoelectric transfer film by covering aluminum wiring with high melting point metal. CONSTITUTION:High melting point metal 12 is deposited on aluminum wirings 7 and 7a. For example, this is done by the selective CVD method of tungsten. To be concrete, a semi-finished product 13 is arranged in the reactor 14 of a CVD device, and then the atmospheric pressure within the reactor 14 is put to 0.1Torr. In this condition, tungsten hexafluoride and hydrogen are introduced into the reactor 14, and the temperature inside the reactor 14 is set 400 deg.C-500 deg.C by heating it with a heater 15. Under this condition, on the aluminum wirings 7 and 7a, WF6 is reduced in contact with Si, so tungsten W is deposited.

72. 发明专利

JPH02288226A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02288226A
公开(公告)日：1990-11-28
申请号：JP10971789
申请日：1989-04-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： H01L21/20 , H01L21/28 , H01L21/339 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/762
摘要： PURPOSE:To form electrode layers at intervals narrower than intervals limited through a fine machining technique by patterning the electrode layers and controlling the intervals of electrodes through epitaxial growth. CONSTITUTION:For grow a single crystal silicon layer 10 sufficiently even on a silicon dioxide film 3 in an epitaxial growth process, a proper number of opening sections 9 for acquiring seeds must be formed at regular intervals not only in the direction of the end sections of electrodes but also regions except charge transfer sections. The opening sections 9 are shaped in the cross direction to the direction of charge transfer of a CCD element and at intervals by which single crystal silicon gate electrodes 10a can be formed sufficiently. The surface of the single crystal silicon layer 10 is coated with a resist, and resists 5 are machined in specified patterns through a photolithographic process. The resists 5 are removed, and single crystal silicon is vapor-phase epitaxial grown to the single crystal silicon layer 10 again, thus preparing the single crystal silicon gate electrodes 10a at the intervals of the electrodes in size of 0.5mum or less.

73. 发明专利

JPH02114565A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02114565A
公开(公告)日：1990-04-26
申请号：JP26736688
申请日：1988-10-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： H01L21/76 , H01L27/148 , H01L29/78
摘要： PURPOSE:To apply a high voltage to a gate electrode by a method wherein a thickness of an insulating film in a element isolation region is made thicker than a thickness of an insulating film in an active region. CONSTITUTION:While silicon nitride films 4 are left, a part corresponding to a transfer gate part B is coated with a photoresist 5; p-type regions 8 as element isolation regions are formed by an ion implantation method. The silicon nitride films 4 on the p-type regions as the element isolation regions are left. As a result, a thickness of insulating films 3, 4 under polycrystalline silicon 9 in the p-type regions 9 in element isolation parts D is made thicker than a thickness of the insulating film 3 under the polycrystalline silicon 9 in photodiode parts A and the charge transfer part B as active regions. Thereby, a threshold voltage becomes high; it is possible to apply a high voltage to a gate electrode.

74. 发明专利

JPH02100361A COLOR SOLID-STATE IMAGE SENSING DEVICE 失效
公开(公告)号：JPH02100361A
公开(公告)日：1990-04-12
申请号：JP25414288
申请日：1988-10-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： H04N9/07 , H01L27/14 , H01L27/148
摘要： PURPOSE:To uniformize photosensitivity by providing a signal processing part and performing signal handling of signals outputted by photoelectric conversion parts at end parts in the vicinity of a chip end by the use of signals outputted by the photoelectric conversion parts which are located at parts other than the above end parts. CONSTITUTION:A signal processing part 21 is provided at a terminal part of each electric charge transfer part 5 and out of transmitted signal charges, signals outputted by photodiodes 4a at end parts are handled so that they are processed with the signals which are outputted by photodiode 4 located at parts that are other than the above end parts. Further, signal charges processed in this way are amplified by an output amplifier 7 and are outputted to the outside of a chip. The foregoing signal charges processed favorably correct the outputs in photoelectric conversion parts which are located at the end parts of the charge transfer part and are liable to give rise to differences in photosensitivity and thus uniformize photosensitivity in respective photoelectric conversion parts.

75. 发明专利

JPH0277157A SOLID IMAGE PICK-UP DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0277157A
公开(公告)日：1990-03-16
申请号：JP25770388
申请日：1988-10-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIRAISHI TADASHI , YAMAMOTO HIDEKAZU
IPC分类号： H01L27/148 , H01L27/14
摘要： PURPOSE:To improve the evenness in the photosensitivity by covering the dicing surfaces of solid image pick-up element chips with a shading member. CONSTITUTION:Two each of solid image pick-up element chips 1 are juxtaposed in a package 2 with the terminal end (dicing surface) of one chip 1 abutted against the starting end (dicing surface) of the other chip 1 to compose a linear solid image pick-up device having picture element in a number corresponding to that of the two solid image pick-up elements. In respective solid image pick-up element chips 1 such as a solid image pick-up device, the dicing surfaces corresponding to a scribe line V-V are covered with a shading member 13 to obstruct any incident light. Consequently, the photosensitivity of a photodiode 4 near the dicing surface can be prevented from being varied from that of another photodiode 4 far from the dicing surface.

76. 发明专利

JPH01170883A DETECTION OF DISTANCE TO LIGHT SOURCE 失效
公开(公告)号：JPH01170883A
公开(公告)日：1989-07-05
申请号：JP33254087
申请日：1987-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： G01S11/12 , G01S11/00
摘要： PURPOSE:To detect the distance to a light source placed at an arbitrary point with a specific expression by preliminarily measuring overall photocurrents flowing to a semiconductor position detector at the time of placing the light source at two points to which distances from the detector are known. CONSTITUTION:Light sources 8a, 8b, and 8z exist at points A, B, and Z to which distances from a semiconductor position detector 1 are known values (a) and (b) and an arbitrary value (z) respectively. Irradiating light beams 9a and 9b are emitted from light sources 8a and 8b to measure overall photocurrents Ia and Ib flowing to the detector 1. An overall photocurrent IL=Ix+Iy flowing to the detector 1 is proportional to the distance to the light source independently of the incidence position of the light source if the intensity of light of the light source is fixed, and this property is used. Thus, an overall photocurrent Iz flowing to the detector 1 is measured by a light beam 9z project ed from the light source 8z to obtain the value (z) in accordance with z={(aI 2-bIa)/(Ib-Ia)}-{(a-b)/(Ib-Ia)}Iz.

77. 发明专利

JPS63261118A LIGHT INTENSITY DETECTOR 失效
公开(公告)号：JPS63261118A
公开(公告)日：1988-10-27
申请号：JP9580287
申请日：1987-04-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： G01J1/02 , H01L31/10
摘要： PURPOSE:To eliminate the need for a power source and also to eliminate the need for another device even when the level of a current flowing through a load is compared with a threshold value by making light incident on 1st and 2nd photoelectric conversion junctions and detecting the direction of the current flowing through the load. CONSTITUTION:A semiconductor element 5 has an n-type semiconductor 6 formed between p-type semiconductors 7 and 8 and then the 1st and 2nd p-n junctions (photoelectric junction) 9 and 10 are formed integrally in mutually opposite directions and is series. The thickness D6 and D7 of the semiconductors 6 and 7 are made relatively thin so that light 4 incident on the element 5 reaches the p-n junctions 9 and 10 sufficiently. Then the current flowing through the external load 3 is inverted in direction at specific critical light intensity as a boundary, so the voltage between both terminals is detected and the direction of its current is detected to detect the intensity of the light 4 in the form of relative large-small relation with the critical light intensity. The current based upon the photoelectromotive force of the element 5 flows through the load 3, so any power source need not be provided to an intensity detector for light.

78. 发明专利

JPS63256831A LIGHT WAVELENGTH DETECTOR 失效
公开(公告)号：JPS63256831A
公开(公告)日：1988-10-24
申请号：JP9271187
申请日：1987-04-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： G01J9/00 , H01L31/10
摘要： PURPOSE:To reduce the size of a device by constituting a light wavelength detector by using a photoelectric converting element and inverting the direction of an output current about specific critical wavelength. CONSTITUTION:A semiconductor element 5 has 1st and 2nd p-n junctions 10 and 11 formed integrally in series and in the opposite directions. The critical length is varied by varying the thickness D7 of an n-type semiconductor 7 and the material of the element 5. When light beams which are nearly as intense as each other are incident on the junctions 10 and 12 of this element 5, the electromotive force at the junction 11 is larger than that at the junction 10. When light 3 incident from the side of the junction 10 has short wavelength, sufficient light does not reach the junction 11. A current, therefore, flows to an external load 6 as shown by an arrow B. When the light 3 has long wavelength, on the other hand, light beams of nearly the same intensity are incident on the junctions 10 and 11. A current, therefore, flows to the load 6 as shown by C, so whether the wavelength is long or short is detected.

79. 发明专利

JPS6223160A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS6223160A
公开(公告)日：1987-01-31
申请号：JP16457585
申请日：1985-07-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： ASAI SOTOHISA , IWADE SHUHEI , YUYA NAOKI , YAMAMOTO HIDEKAZU
IPC分类号： H01L27/146 , H01L27/14 , H04N5/335 , H04N5/369 , H04N5/374
摘要： PURPOSE:To improve reliability and yield on manufacture by forming an adherence reinforcing layer onto an insulating oxide film in a region on the outside of a picture element region. CONSTITUTION:An adherence reinforcing layer separated from an electrode is shaped onto an insulating oxide film in a region on the outside of a picture element region. The adherence reinforcing layer 13 is formed separated from the electrode 7 on the outside of the picture element region 12 at the same time as or after the electrode 7 is shaped in the picture element region 12, and a photoconductive film 8 is formed. The greater part of the photoconductive film 8 are shaped onto Al having high bonding strength, thus acquiring a solid- state image pickup device having high reliability. When the photoconductive film 8 is removed from the surface for electric connections, the cut surface of the photoconductive film 8 is positioned on the adherence reinforcing layer 13 at all times, thus preventing peeling from an end section.

80. 发明专利

JPS61267343A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61267343A
公开(公告)日：1986-11-26
申请号：JP11068185
申请日：1985-05-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： YUYA NAOKI , IWADE SHUHEI , YAMAMOTO HIDEKAZU , ASAI SOTOHISA
IPC分类号： B28D5/00 , H01L21/301 , H01L21/78
摘要： PURPOSE:To segment a wafer into semiconductor elements by a method wherein chemical etching is employed along a region in the wafer, along which segmentation is to be accomplished, for the provision of a groove sufficiently deeper than the electrically active layer and the region in the lower surface of the wafer positioned corresponding to the grooves in the upper surface is also provided with a groove that is formed by a dicing saw or the like. CONSTITUTION:A photosensitive resist 5 is applied to the upper surface of a semiconductor wafer 1. A slit is created when a resist 5 is partially removed by a photolithographic method from the region along which semiconductor elements 3a, 3b are to be separated from each other. A process follows wherein the upper surface of the semiconductor wafer 1 is subjected to chemical etching with the resist 5 with the slit serving as a mask. The groove 6 formed in the etching process must be sufficiently deeper than electrically active layer 2a, 2c. Next, the resist 5 is removed from the upper surface of the semiconductor wafer 1 and, in the lower surface of the semiconductor wafer 1, a groove 4 is provided by using a dicing saw or the like. The semiconductor elements 3a, 3b are separated from the semiconductor wafer 1 along the grooves 4, 6.

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