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71. 发明专利

JPS59198734A Multilayer interconnection structure 失效
标题翻译：多层互连结构
公开(公告)号：JPS59198734A
公开(公告)日：1984-11-10
申请号：JP7427683
申请日：1983-04-25
申请人： Mitsubishi Electric Corp
发明人： OKAMOTO TATSUROU , EGUCHI KOUJI , KOTANI HIDEO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532
CPC分类号： H01L23/53223 , H01L21/76886 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To produce the titled multilayer interconnection thermally stable with high reliability by a method wherein intermediate layers with excellent adhesion filling the role of a barrier restricting the reaction between a conductive layer and an interlayer insulating layer. CONSTITUTION:Metallic wirings 3a, 3b as the first layer and an interlayer insulating film 4 are formed and after forming a throughhole 7 in the interlayer insulating film 4, an intermediate metallic film 12 made of Ti compound such as Ti or TiW, TiN etc. is thinly formed by means of CVD process, sputtering process and electronic beam heating evaporation process etc. then an Al layer 8 as the second layer metallic wiring is formed by means of the same CVD process, sputtering process and electronic beam heating evaporation process to cover the specified wiring part with photoresist film 9. Next the Al layer 8 and the intermediate metallic layer 12 as the second layer are patterned by etching utilizing the photoresist film 9 as a mask to form a metallic wiring 8a and an intermediate metallic wiring layer 12a as the second layer further to remove the photoresist film 9. Finally a passivation film 10 made of Si3N4 film may be formed on overall surface to complete the multilayer interconnection structure.
摘要翻译：目的：通过一种方法制造具有高可靠性的标准多层互连热稳定性，其中具有优异粘合性的中间层填充限制导电层和层间绝缘层之间的反应的屏障的作用。构成：在层间绝缘膜4中形成作为第一层的金属配线3a，3b和层间绝缘膜4，并且在层间绝缘膜4中形成贯通孔7之后，由Ti，TiW等Ti化合物，TiN等Ti化合物制成的中间金属膜12。通过CVD工艺，溅射工艺和电子束加热蒸发工艺等薄层形成，然后通过相同的CVD工艺，溅射工艺和电子束加热蒸发工艺形成作为第二层金属布线的Al层8，以覆盖具有光致抗蚀剂膜9的指定布线部分。接下来，通过使用光致抗蚀剂膜9作为掩模的蚀刻来将Al层8和作为第二层的中间金属层12图案化，以形成金属布线8a和中间金属布线层12a 第二层进一步去除光致抗蚀剂膜9.最后，可以在整个表面上形成由Si 3 N 4膜制成的钝化膜10以完成多层互连离子结构。

72. 发明专利

JPS59163850A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59163850A
公开(公告)日：1984-09-14
申请号：JP3857383
申请日：1983-03-07
申请人： Mitsubishi Electric Corp
发明人： KOTANI HIDEO , IKEDA TATSUHIKO
IPC分类号： H01L29/78 , H01L21/316 , H01L23/522 , H01L27/00
CPC分类号： H01L23/522 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To make the angle of inclination of a stepped section gentle, and to prevent the disconnection of a conductive wiring film by using a silicon oxide film through a bias-sputtering method as an insulating protective film in the lower section of the conductive wiring film. CONSTITUTION:A silicon oxide film formed through a bias-sputtering method is empolyed as an insulating protective film 8 in the lower section of a conductive wiring film 6 in an MOS type semiconductor intergrated circuit. With the protective film 8 shaped in this manner, the angle of inclination of 45 deg. is formed at a stepped section and coatability is improved, the thickness of the wiring film 6 is not thinned, and a disconnection is not also generated.
摘要翻译：目的：为了使台阶部分的倾斜角度缓和，并且通过偏压溅射法在导电布线膜的下部中作为绝缘保护膜，通过使用氧化硅膜来防止导电布线膜断开。构成：通过偏压溅射法形成的氧化硅膜在MOS型半导体集成电路的导电布线膜6的下部被赋予绝缘保护膜8。以这种方式成形的保护膜8，倾斜角为45度。形成在阶梯部分并且可涂覆性提高，布线膜6的厚度不变薄，并且不会产生断开。

73. 发明专利

JPS59134835A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS59134835A
公开(公告)日：1984-08-02
申请号：JP896983
申请日：1983-01-21
申请人： Mitsubishi Electric Corp
发明人： IKEDA TATSUHIKO , KOTANI HIDEO
IPC分类号： H01L21/768 , H01L21/316
CPC分类号： H01L21/316
摘要： PURPOSE:To form the section of a through hole in a tapered shape by varying a substrte bias to gradually alter the quality of an interlayer insulating film when forming the film by an RF sputtering, thereby flattening the stepwise difference of the surface. CONSTITUTION:An Si substrate formed with wirings 2 is contained in an RF sputtering device, and an SiO2 film 3 is accumulated while gradually approaching a large negative bias voltage to 0. Then through holes 4 are formed by photolithographic technique and wet etching. Since the film accumulated by larger negative bias voltage has smaller etching rate, the section of the hole becomes in a tapered shape. Then, a resist 20 is removed, and upper layer electrode wirings 5 are superposed on the flattened interlayer insulating film 3. According to this configuration, the disconnection of the electrode wirings can be prevented without increasing a particularly equipment and steps.
摘要翻译：目的：通过改变阴极偏压来形成锥形截面，以便通过RF溅射形成膜时逐渐改变层间绝缘膜的质量，从而使表面的逐步差异变平。构成：在RF溅射装置中包含由布线2形成的Si衬底，并且在逐渐接近大的负偏压至0的同时积聚SiO 2膜3.然后通过光刻技术和湿蚀刻形成通孔4。由于通过较大的负偏压积累的膜具有较小的蚀刻速率，因此孔的截面变成锥形。然后，去除抗蚀剂20，并且上层电极布线5叠置在平坦的层间绝缘膜3上。根据该结构，可以防止电极布线的断开，而不增加特别的设备和步骤。

74. 发明专利

JPS5967634A Processing method for semiconductor device 失效
标题翻译：半导体器件的处理方法
公开(公告)号：JPS5967634A
公开(公告)日：1984-04-17
申请号：JP17802482
申请日：1982-10-09
申请人： Mitsubishi Electric Corp
发明人： KOTANI HIDEO , TSUKAMOTO KATSUHIRO
IPC分类号： H01L21/302
CPC分类号： H01L21/302
摘要： PURPOSE:To etch a minute pattern easily by positioning a semiconductor base body in a reactive fluid atmosphere and irradiating beams, through which a photochemical reaction is generated by a reactive fluid, to the semiconductor base body through a transfer mask. CONSTITUTION:A semiconductor substrate 1, an upper surface thereof has a thin-film 2, is encased in a sealed vessel 4, and laser beams are irradiated through a transparent plate 5. The inside of the vessel 4 is evacuated by an exhaust port 4b, and Cl2 is introduced as a reactive gas from an introducing port 4c so that pressure reaches approximately 200Torr. Argon laser beams are outputted from a light source 6, and the upper section of a mask 8 is scanned at approximately 90mum/s speed through a first optical system 7. Laser beams passing through the mask 8 pass through a second optical system 9 and are adjusted, and transmit through the transparent plate 5 and irradiate the upper section of the thin-film 2 of the semiconductor substrate 1. The photochemical reaction is generated by the reactive gas in a section irradiated by laser beams, and the section is etched.
摘要翻译：目的：通过将半导体基体定位在反应性流体气氛中并且通过转印掩模将通过反应性流体产生光化学反应的光束照射到半导体基体来容易地蚀刻微小图案。构成：半导体衬底1的上表面具有薄膜2，被封装在密封容器4中，激光束通过透明板5照射。容器4的内部通过排气口4b ，并且Cl2作为反应气体从引入口4c引入，使得压力达到约200Torr。从光源6输出氩激光束，通过第一光学系统7以大约90m / s的速度扫描掩模8的上部。通过掩模8的激光束通过第二光学系统9，并且是调整并透过透明板5照射半导体衬底1的薄膜2的上部。光化学反应由激光束照射的部分中的反应性气体产生，并且该部分被蚀刻。

75. 发明专利

JPS5895862A SEMICONDUCTOR DEVICE HAVING LAMINATED STRUCTURE 失效
公开(公告)号：JPS5895862A
公开(公告)日：1983-06-07
申请号：JP19472081
申请日：1981-11-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： SAKURAI HIROMI , TSUKAMOTO KATSUHIRO , KOTANI HIDEO , YAKUSHIJI HISAO , OOGA HIROTOMO
IPC分类号： H01L21/60 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/00 , H01L27/06 , H01L29/06
摘要： PURPOSE:To enhance the area of the device and to make the yield rate excellent, with regard to the input and output power of electric signal and the electrode structure for a power source for driving the device in the semiconductor device having laminated structure. CONSTITUTION:In the semiconductor having the laminated structure which is separated into upper and lower parts by an insulating film and the like, required electrodes 2' are provided in each layer when the device is formed by three layers. Each layer is wired in the inside, and leads are formed at the peripheral part of each layer of the device. New electrodes are formed on this part by photomechanical process, printing technologies, or the like. The process for forming the device is as follows: the semiconductor device having the laminated structure, which is formed on a flat substrate, is cut away in a V-shape as shown in the Figure, and the lead parts of each layer are exposed. A metal is evaporated on the entire body including said grooves from the surface. When the printing technology is used, a metal electrode is printed one by one at a slant angle. In this method, the electrode can be formed on the broad area of the insulating film.

76. 发明专利

JPS5892234A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS5892234A
公开(公告)日：1983-06-01
申请号：JP19114381
申请日：1981-11-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKAMOTO KATSUHIRO , KOTANI HIDEO , YAKUSHIJI HISAO , HARADA HIROTSUGU
IPC分类号： H01L23/522 , H01L21/768 , H01L21/88
摘要： PURPOSE:To obtain an excellent step coverage and easily open a through hole, by a method wherein on a thin silicon nitride film formed by plasma CVD, a thick phosphate glass is formed by vacuum CVD thereby to form an interlayer insulating film of double-layer structure. CONSTITUTION:A phosphate glass film 6 is etched with an HF etching solution by using as a mask a photoresist 7 formed by photoengraving for opening a through hole for making an electrode wiring contact between first and second layers. The etching is continued until a plasma silicon nitride 5 is exposed. Next, the plasma silicon nitride 5 is etched by a plasma etching employing CF4 gas to expose the surface of an AlSi wiring 31. Then, the photoresist 7 employed for opening the through hole is removed, and a second-layer electrode wiring 32 is formed. Thus, a multilayer wiring is obtained having a double-layered interlayer insulating film which is excellent in step coverage and easily etched for opening the through hole.

77. 发明专利

JPS5890721A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5890721A
公开(公告)日：1983-05-30
申请号：JP19110681
申请日：1981-11-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUKAWA TAKAYUKI , YAMANO TAKESHI , KOTANI HIDEO
IPC分类号： H01L21/20
摘要： PURPOSE:To form a semiconductor thin film layer with good crystallinity by a method wherein a recess is formed in a semiconductor wafer of single crystal, and a semiconductor layer of polycrystal or amorphous structure is monocrystallized. CONSTITUTION:A recess 11 with suitable location and depth is formed on the surface of a single crystal semiconductor wafer 1 through etching. Then, an interlayer insulating layer 2, a monocrystallized semiconductor thin layer 3 and an interlayer insulating layer 4 are formed in order on a bottom surface 11b of the recess 11. Then, a polycrystalline semiconductor layer 6 is formed over the insulating layer 4, upper surface of the wafer 1 and a side surface 11a of the recess 11, and a laser beam 7 is irradiated upon the layer 6 to heat the same. Upon this heating, the polycrystalline semiconductor layer 6 is monocrystallized to form a semiconductor thin film layer 8. In this way, since the wafer 1 is used as a growth core for monocrystallization, it becomes possible to form a semiconductor thin film layer with good crystallinity. Similar effect can be attained also for the polycrystalline semiconductor layer of amorphous structure.

78. 发明专利

JPS5764926A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS5764926A
公开(公告)日：1982-04-20
申请号：JP14073880
申请日：1980-10-07
申请人： Mitsubishi Electric Corp
发明人： FUKUMOTO HAYAAKI , SATOU SHINICHI , TAKANO HIROZOU , KOTANI HIDEO , HARADA KOUJI , KAYANO SHINPEI
IPC分类号： H01L21/22 , H01L21/265
CPC分类号： H01L21/265
摘要： PURPOSE:To reduce the lateral spread of a diffusion layer in order to permit a pattern to be more microscopic, by a method wherein regions selectively injected with impurity ions are selectively scanned with an electron beam controlled suitalby, and the regions irradiated with the beam are annealed. CONSTITUTION:For example, in the process for forming the source and drain of an MOSFET, a gate film 3 and a polycrystaline Si film 6 are provided on a substrate 1 separated by a field film 2 and impurity ions are injected into the exposed substrate surface. Then, diffusion regions 4, 5 injected with the ions are selectively scanned with an electron beam 8 through control by means of a computer, and an annealing treatment is locally applied by means of the energy of the electron beam. Because the beam diameter can be made submicroscopic, it is possible to selectively anneal necessary portions without laterally spreading the diffusion layers 4, 5. In addition, it becomes possible to effect control in the depthwise direction by means of acceleration energy and output.
摘要翻译：目的：为了减少扩散层的横向扩散，以便允许图案更微观，通过其中选择性地注入杂质离子的区域被选择性地用电子束来控制扫描的方法，并且用光束照射的区域是退火。构成：例如，在用于形成MOSFET的源极和漏极的工艺中，在由场膜2分离的衬底1上设置栅极膜3和多晶硅膜6，并将杂质离子注入暴露的衬底表面。然后，借助于计算机通过控制，用电子束8选择性地扫描注入了离子的扩散区域4,5，并且通过电子束的能量局部地施加退火处理。由于光束直径可以是亚微观的，所以可以选择性地退火所需部分而不会横向扩散扩散层4,5。另外，可以通过加速能量和输出来实现深度方向的控制。

79. 发明专利

JPS5737830A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS5737830A
公开(公告)日：1982-03-02
申请号：JP11449280
申请日：1980-08-19
申请人： Mitsubishi Electric Corp
发明人： SATOU SHINICHI , HARADA HIROJI , FUKUMOTO HAYAAKI , TAKANO HIROZOU , KOTANI HIDEO , KAYANO SHINPEI
IPC分类号： H01L21/033 , H01L21/283 , H01L21/318 , H01L21/336
CPC分类号： H01L29/66575 , H01L21/033 , H01L21/283 , H01L21/3185
摘要： PURPOSE: To form a microscopic contact hole without forming a mask for the subject semiconductor device by a method wherein the contact region on the surface of a substrate is converted to a nitriding film by injecting an N
2 ion on the contact region using a direct patterning method and after the surface has been oxidized, the nitriding film is removed.
CONSTITUTION: After a gate polycrystalline Si 14 and a source and drain diffusion layer 2 have been formed on the substrate 1, the N
2 ion is injected in the region 8 which is contacted to an electrode using the ion beam direct patterning method. Then, the injected region 8 is converted to a nitriding film by performing an annealing treatment in an N
2 atmosphere at the temperature of 1,000W1,050°C. Subsequently, after an oxide film 9 has been formed on the surface excluding the nitriding film by performing a thermal oxidation teratment, a contact hole is formed by re moving the nitriding film 9 using phosphoric acid and the like, for example, and an electrode wiring 7 is formed. Through these procedures, a microscopic contact hole of approximately 1μm or below can be formed without fail.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：为了通过以下方法形成微细接触孔，所述微孔接触孔通过其中通过使用直接图案化方法将接触区域上注入N 2离子将基底表面上的接触区域转变为氮化膜的方法在表面被氧化后，除去氮化膜。构成：在基板1上形成栅极多晶Si 14和源极和漏极扩散层2之后，使用离子束直接图案化方法将N 2离子注入到与电极接触的区域8中。然后，通过在氮气气氛中在1000-1.050℃的温度下进行退火处理，将注入区域8转化为氮化膜。随后，在通过进行热氧化破坏而在除了氮化膜之外的表面上形成氧化膜9之后，例如通过使用磷酸等将氮化膜9重新移动而形成接触孔，并且电极配线形成7。通过这些方法，可以形成大约1mum以下的微观接触孔。

80. 发明专利

JPS56134749A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56134749A
公开(公告)日：1981-10-21
申请号：JP3940280
申请日：1980-03-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOTANI HIDEO , YAKUSHIJI HISAO , DENDA MASAHIKO , SATOU SHINICHI , UOTANI SHIGEO
IPC分类号： H01L23/29 , H01L23/31 , H01L23/556
摘要： PURPOSE:To prevent a mulfunction by alpha-rays by a method wherein an opening is formed in an insulating film on a conductive layer connected to a diffused layer and covered with Ta or W, and a metal at the opening part is removed after the parts other than the opening part are oxidized. CONSTITUTION:An N layer 2 is formed on a P type Si substrate 1 and an Al wiring 4 is formed on an SiO2 film 3 with an SiO2 film 5. An opening 6 is formed in the film 5 and covered with Ta or W, the opening 6 is masked with a resist 8 and oxidized by an anodic oxidizing method to form an oxide film 9. After the removal of the resist 8, a metal 7 in the opening 6 is removed by a plasma etching with CF4 gas or the like. With this construction, a metal oxide film 9 is made a protecting film against the alpha-rays radiation and the mulfunction of the device is prevented.

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