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    • 72. 发明授权
    • High strength bonding tool and a process for the production of the same
    • 高强度粘合工具及其生产工艺
    • US5653376A
    • 1997-08-05
    • US414787
    • 1995-03-31
    • Tsutomu NakamuraHiroshi KawauchiTetsuo Nakai
    • Tsutomu NakamuraHiroshi KawauchiTetsuo Nakai
    • B23K20/02B23K3/03H01L21/603
    • B23K20/025H01L2924/0002
    • The present invention provides a thermocompression tool, i.e. high strength bonding tool used for mounting a semiconductor device or element such as IC, LSI, etc. on a substrate, for example, a tool of pulse heating type used for soldering, and a mounting tool (bonding tool). The tool is used for heating, melting and bonding or thermocompression bonding in a lump a number of workpieces to be bonded, making up a part of electronic parts, in particular, a high precision tool called outer lead bonding tool. The high strength bonding tool has a substrate that is composed of a cemented carbide having microscopic protrusions of hard carbides and/or hard carbonitrides on at least one surface and having a coefficient of linear expansion of 4.0.times.10.sup.-6 to 5.5.times.10.sup.-6 /.degree.C. at room temperature to 400.degree. C. Furthermore, a polycrystalline diamond coating is formed on the surface having microscopic protrusions by a gaseous phase synthesis method, the surface coated with the polycrystalline diamond coating being used as a tool end surface.
    • 本发明提供一种热压工具,即用于将诸如IC,LSI等的半导体器件或元件安装在基板上的高强度焊接工具,例如用于焊接的脉冲加热型工具,以及安装工具 (接合工具)。 该工具用于加热,熔化和粘合或热压接在一起的多个待接合的工件,构成电子部件的一部分,特别是称为外引线接合工具的高精度工具。 高强度粘合工具具有基材,该基材由在至少一个表面上具有硬质碳化物和/或硬质碳氮化物的微观突起的硬质合金构成,线膨胀系数为4.0×10 -6至5.5×10 -6 /℃ C.在室温至400℃下进行。此外,通过气相合成法在具有微观突起的表面上形成多晶金刚石涂层,涂覆有多晶金刚石涂层的表面用作工具端面。
    • 73. 发明授权
    • Silicone rubber roll
    • 硅橡胶卷
    • US5582885A
    • 1996-12-10
    • US247190
    • 1994-05-20
    • Tsutomu NakamuraSatao Hirabayashi
    • Tsutomu NakamuraSatao Hirabayashi
    • B41J11/04B29K83/00B29L31/32C08G77/34C08K3/36C08L83/04G03G15/20B32B1/08B25F1/00
    • G03G15/2057C08G77/34C08L83/04C08G77/12C08G77/20C08G77/24C08G77/26C08G77/70Y10T428/1355Y10T428/1397Y10T428/31663
    • A silicone rubber roll is characteristically prepared on a metallic center by forming a layer of the cured product of a silicone rubber composition which comprises (A) organopolysiloxane, in which the total amount of low molecular weight siloxanes having a degree of polymerization ranging from 3 to 20 is controlled to be at most 10,000 ppm, (B) reinforcing silica powder with a specific surface area of at least 50 m.sup.2 /g, (C) silicone elastomer particles with an average particle size of 200 .mu.m, in which the total amount of low molecular weight siloxanes having a degree of polymerization ranging from 3 to 20 is 2,000 ppm or less, and (D) a curing agent. The total amount of low molecular weight siloxanes having a degree of polymerization ranging from 3 to 20 within the cured product layer is controlled to be 2,000 ppm or less, since the elimination of the low molecular weight siloxanes having a degree of polymerization ranging from 3 to 20 proceeds effectively during the processes of the silicone rubber composition preparation, forming, and curing. Therefore, the obtained roll is extremely useful for various types of rolls utilized in copying machines which particularly need to avoid the low molecular weight siloxanes.
    • 通过形成硅橡胶组合物的固化产物层,在金属中心上形成硅橡胶辊,该硅橡胶组合物包含(A)有机聚硅氧烷,其中聚合度为3〜3的低分子量硅氧烷的总量为 20的比例控制在10000ppm以下,(B)比表面积为50m 2 / g以上的增强二氧化硅粉末,(C)平均粒径200μm的硅氧烷弹性体粒子,其中, 的聚合度为3〜20的低分子量硅氧烷为2,000ppm以下,(D)固化剂。 将固化产物层内聚合度为3〜20的低分子量硅氧烷的总量控制在2000ppm以下,由于消除聚合度为3〜3的低分子量硅氧烷, 20在硅橡胶组合物制备,成型和固化过程中有效地进行。 因此,所得到的辊对于特别需要避免低分子量硅氧烷的复印机中使用的各种辊非常有用。
    • 75. 发明授权
    • Polycrystalline diamond cutting tool and method of manufacturing the same
    • 多晶金刚石切割工具及其制造方法
    • US5366522A
    • 1994-11-22
    • US970798
    • 1992-11-03
    • Tsutomu NakamuraYasuyuki KanadaTetsuo Nakai
    • Tsutomu NakamuraYasuyuki KanadaTetsuo Nakai
    • B23B27/14C04B37/00C23C16/01C23C16/27B24D3/00
    • C04B37/026B23B27/145C23C16/01C23C16/271C23C16/272C23C16/274C23C16/277B23B2226/315B23B2240/08C04B2235/6586C04B2235/667C04B2235/963C04B2237/083C04B2237/12C04B2237/122C04B2237/123C04B2237/124C04B2237/125C04B2237/30C04B2237/363C04B2237/401C04B2237/704C04B2237/708C04B2237/72C04B2237/82
    • A polycrystalline diamond cutting tool comprises a tool material of polycrystalline diamond formed by low-pressure vapor deposition, which is bonded to a shank of cemented carbide through a brazing layer. The thickness of the polycrystalline diamond layer is set at 0.1 to 1.0 mm, while that of the brazing layer is set at 10 to 50 .mu.m. The brazing layer is made of a material having a melting point of 950.degree. to 1300.degree. C., which is in the form of an alloy layer containing at least one material selected from metals belonging to the groups IVa, Va, VIa and VIIa of the periodic table and carbides thereof and at least one material selected from Au, Ag, Cu, Pt, Pd and Ni. The polycrystalline diamond cutting tool is improved in heat resistance and tool strength. In order to improve deposition resistance of the cutting tool, the surface roughness of a tool rake face is set to be not more than 0.2 .mu.m in Rmax. A portion of the polycrystalline diamond layer up to a depth of 10 .mu.m from the rake face contains 99 to 100 atomic percent of carbon elements, and 99 to 100% of carbon atoms are diamond-bonded. A surface of the polycrystalline diamond layer which has been in contact with the substrate during formation of the polycrystalline diamond layer defines the rake face, whose surface is subjected to ion beam machining and thereafter treated in the atmosphere at a temperature of 300.degree. to 500.degree. C.
    • 多晶金刚石切割工具包括通过低压气相沉积形成的多晶金刚石的工具材料,其通过钎焊层粘合到硬质合金的柄上。 多晶金刚石层的厚度设定为0.1〜1.0mm,钎焊层的厚度设定为10〜50μm。 钎焊层由熔点为950℃至1300℃的材料制成,其为含有至少一种选自属于IVa,Va,VIa和VIIa族的金属的材料的合金层的形式 周期表及其碳化物和选自Au,Ag,Cu,Pt,Pd和Ni中的至少一种材料。 多晶金刚石切削工具的耐热性和刀具强度提高。 为了提高切削工具的耐沉积性,将工具前刀面的表面粗糙度设定为Rmax以下0.2μm以下。 距离前刀面10μm深的多晶金刚石层的一部分含有99〜100原子%的碳元素,99〜100%的碳原子金刚石键合。 在形成多晶金刚石层期间已经与基板接触的多晶金刚石层的表面限定了表面进行离子束加工的后刀面,然后在大气中在300〜500℃的温度下进行处理 C。
    • 77. 发明授权
    • Cryptographic communication method and system
    • 密码通信方式和系统
    • US5144665A
    • 1992-09-01
    • US658528
    • 1991-02-21
    • Kazuo TakaragiYasuhiro IshiiTsutomu Nakamura
    • Kazuo TakaragiYasuhiro IshiiTsutomu Nakamura
    • G06F21/20G09C1/00H04L9/08H04L9/30
    • H04L9/0838H04L9/302
    • A cryptographic communication method and system for performing cryptographic communication between a host computer and a given one of plural terminals connected to the host computer by way of a communication network by using a data key designated by the given terminal or the host, wherein the host computer includes a cryptographic processing unit which includes a processing part for performing a public key cryptographic processing by using a pair of a public key and a private key and a common key cryptographic processing by using a common key, and an internal memory for storing master common key and master private key, a storage for recording as user private key information those data that result from the public key cryptographic processing performed by using a master public key on a plurality of user private keys which are in paired relation to user public keys held in the user terminals, respectively, and control means for performing input/output control between the storage and the cryptographic processing means.
    • 一种加密通信方法和系统,用于通过使用由给定终端或主机指定的数据密钥通过通信网络在主计算机与连接到主计算机的多个终端中给定的一个终端之间进行密码通信,其中主计算机 包括密码处理单元,该密码处理单元包括通过使用一对公共密钥和私人密钥以及通过使用公共密钥的公共密钥密码处理来执行公共密钥密码处理的处理部分和用于存储主公共密钥的内部存储器 和主专用密钥,用于作为用户私钥信息记录的存储用于通过使用主公开密钥执行的公开密钥加密处理的数据作为用户私钥信息记录在与保持在该用户私钥中的用户公钥成对的多个用户专用密钥上 用户终端和用于在存储器和c之间执行输入/输出控制的控制装置 加密处理手段。
    • 79. 发明授权
    • Semiconductor imaging device
    • 半导体成像装置
    • US4857981A
    • 1989-08-15
    • US060545
    • 1987-06-11
    • Kazuya MatsumotoTsutomu Nakamura
    • Kazuya MatsumotoTsutomu Nakamura
    • H01L27/148H01L27/146H04N5/335H04N5/355H04N5/365H04N5/369H04N5/3745
    • H01L27/14643
    • A semiconductor imaging device includes lateral MOS static induction transistors including: a semiconductor layer formed on an insulating substrate or a high-resistance semiconductor substrate; and picture elements arranged in the form of a matrix over the surface of the semiconductor layer, the picture elements respectively constituted by lateral MOS static induction transistors each having a source region and a drain region both of which serve as main electrodes and a gate region for storing therein a photoelectric signal. Isolating regions are formed between the respective picture elements vertically or laterally on the matrix so that the picture elements which are adjacent to each other vertically or laterally share their source and drain regions with each other. Accordingly, each of the gate regions constitutes in combination with the adjacent source or drain region an equivalent unit picture element, thereby improving the density of picture-element formation.
    • 一种半导体成像装置,包括横向MOS静电感应晶体管,包括:形成在绝缘基板或高电阻半导体基板上的半导体层; 以及在半导体层的表面上以矩阵的形式布置的图像元素,分别由侧向MOS静电感应晶体管构成的像素分别具有用作主电极的源极区域和漏极区域,以及栅极区域 存储光电信号。 在矩阵上垂直或横向地形成各个像素之间的隔离区域,使得彼此相邻的像素彼此垂直或横向共享它们的源极和漏极区域。 因此,每个栅极区域与相邻的源极或漏极区域组合构成等效单位像素,从而提高了图像元素形成的密度。