专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20120313063A1 NONVOLATILE MEMORY DEVICE HAVING AN ELECTRODE INTERFACE COUPLING REGION 有权
标题翻译：具有电极接口连接区域的非易失性存储器件
公开(公告)号：US20120313063A1
公开(公告)日：2012-12-13
申请号：US13156722
申请日：2011-06-09
申请人： Yun Wang , Tony Chiang , Imran Hashim
发明人： Yun Wang , Tony Chiang , Imran Hashim
IPC分类号： H01L47/00
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/065 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1226 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1625
摘要： Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. In one configuration of the resistive switching nonvolatile memory device, the interface layer structure comprises a passivation region, an interface coupling region, and/or a variable resistance layer interface region that are configured to adjust the nonvolatile memory device's performance, such as lowering the formed device's switching currents and reducing the device's forming voltage, and reducing the performance variation from one formed device to another.
摘要翻译：本发明的实施例一般涉及具有设置在至少一个电极和形成在非易失性存储器件中的可变电阻层之间的界面层结构的电阻式开关非易失性存储器件及其形成方法。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。在电阻式开关非易失性存储器件的一种结构中，界面层结构包括钝化区域，界面耦合区域和/或可变电阻层接口区域，其被配置为调整非易失性存储器件的性能，例如降低形成器件的开关电流并降低器件的成型电压，并降低从一个成形器件到另一个器件的性能变化。

72. 发明授权

US08318573B2 Nonvolatile memory elements 有权
标题翻译：非易失性存储元件
公开(公告)号：US08318573B2
公开(公告)日：2012-11-27
申请号：US13337611
申请日：2011-12-27
申请人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
发明人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
IPC分类号： H01L21/02
CPC分类号： H01L45/1608 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.
摘要翻译：提供了基于电阻式开关存储元件层的非易失性存储元件。非易失性存储元件可以具有电阻性开关金属氧化物层。电阻式开关金属氧化物层可以具有一层或多层氧化物。电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。可以形成层以增强非易失性存储元件的热稳定性。用于非易失性存储元件的电极可以包含导电层和缓冲层。

73. 发明申请

US20120149164A1 METHODS FOR FORMING RESISTIVE-SWITCHING METAL OXIDES FOR NONVOLATILE MEMORY ELEMENTS 有权
标题翻译：形成非易失性存储元件的电阻式切换金属氧化物的方法
公开(公告)号：US20120149164A1
公开(公告)日：2012-06-14
申请号：US13111230
申请日：2011-05-19
申请人： Pragati Kumar , Sandra G. Malhotra , Sean Barstow , Tony Chiang
发明人： Pragati Kumar , Sandra G. Malhotra , Sean Barstow , Tony Chiang
IPC分类号： H01L21/02
CPC分类号： H01L45/1625 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation sate of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.
摘要翻译：提供具有电阻开关金属氧化物的非易失性存储元件。非易失性存储元件可以由电阻式开关金属氧化物层形成。金属氧化物层可以使用相对低的溅射功率，相对低的占空比和较高的溅射气体压力的溅射沉积形成。掺杂剂可以以小于基底氧化物中的掺杂剂的溶解度极限的原子浓度结合到基底氧化物层中。基底氧化物中金属的至少一种氧化态优选不同于掺杂剂的至少一种氧化态。可以选择掺杂剂的离子半径和金属的离子半径彼此接近。可以对电阻式开关金属氧化物进行退火和氧化操作。可以制造具有相对较大的电阻率和大的高 - 低 - 电阻率比的双稳态金属氧化物。

74. 发明申请

US20120142143A1 Methods for Forming Resistive Switching Memory Elements by Heating Deposited Layers 有权
标题翻译：通过加热沉积层形成电阻式开关存储元件的方法
公开(公告)号：US20120142143A1
公开(公告)日：2012-06-07
申请号：US13371220
申请日：2012-02-10
申请人： Pragati Kumar , Sean Barstow , Sunil Shanker , Tony Chiang
发明人： Pragati Kumar , Sean Barstow , Sunil Shanker , Tony Chiang
IPC分类号： H01L47/00
CPC分类号： H01L45/1633 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.
摘要翻译：提供电阻式开关非易失性存储元件。可以使用快速热退火技术来加热含金属层和用于存储元件的氧化物层。在加热期间，氧化物层可能分解并与含金属层反应。来自分解氧化物层的氧可以从含金属的层与金属形成金属氧化物。所得到的金属氧化物可以表现出用于电阻式开关存储元件的电阻式开关。

75. 发明申请

US20120094034A1 COMBINATORIAL PLASMA ENHANCED DEPOSITION TECHNIQUES 失效
公开(公告)号：US20120094034A1
公开(公告)日：2012-04-19
申请号：US13334491
申请日：2011-12-22
申请人： Sunil Shanker , Tony Chiang
发明人： Sunil Shanker , Tony Chiang
IPC分类号： B05D5/12 , H05H1/24
CPC分类号： C23C16/047 , C23C16/04 , C23C16/45536 , C23C16/45551 , C23C16/45565 , C23C16/45574 , C23C16/45591 , C23C16/4583 , C23C16/46 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/32357 , H01J37/32366
摘要： Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.

76. 发明申请

US20120077338A1 COMBINATORIAL PLASMA ENHANCED DEPOSITION TECHNIQUES 失效
公开(公告)号：US20120077338A1
公开(公告)日：2012-03-29
申请号：US13311926
申请日：2011-12-06
申请人： Sunil Shanker , Tony Chiang
发明人： Sunil Shanker , Tony Chiang
IPC分类号： H01L21/28 , H01L21/31
CPC分类号： C23C16/047 , C23C16/04 , C23C16/45536 , C23C16/45551 , C23C16/45565 , C23C16/45574 , C23C16/45591 , C23C16/4583 , C23C16/46 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/32357 , H01J37/32366
摘要： Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.

77. 发明授权

US08143092B2 Methods for forming resistive switching memory elements by heating deposited layers 有权
标题翻译：通过加热沉积层形成电阻式开关存储元件的方法
公开(公告)号：US08143092B2
公开(公告)日：2012-03-27
申请号：US12400655
申请日：2009-03-09
申请人： Pragati Kumar , Sean Barstow , Sunil Shanker , Tony Chiang
发明人： Pragati Kumar , Sean Barstow , Sunil Shanker , Tony Chiang
IPC分类号： H01L21/00
CPC分类号： H01L45/1633 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.
摘要翻译：提供电阻式开关非易失性存储元件。可以使用快速热退火技术来加热含金属层和用于存储元件的氧化物层。在加热期间，氧化物层可能分解并与含金属层反应。来自分解氧化物层的氧可以从含金属的层与金属形成金属氧化物。所得到的金属氧化物可以表现出用于电阻式开关存储元件的电阻性开关。

78. 发明授权

US07977153B2 Methods for forming resistive-switching metal oxides for nonvolatile memory elements 有权
标题翻译：用于形成用于非易失性存储元件的电阻式开关金属氧化物的方法
公开(公告)号：US07977153B2
公开(公告)日：2011-07-12
申请号：US12967530
申请日：2010-12-14
申请人： Pragati Kumar , Sandra G. Malhotra , Sean Barstow , Tony Chiang
发明人： Pragati Kumar , Sandra G. Malhotra , Sean Barstow , Tony Chiang
IPC分类号： H01L21/00 , H01L21/16 , H01L21/20 , H01L21/36
CPC分类号： H01L45/1625 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation state of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.
摘要翻译：提供具有电阻开关金属氧化物的非易失性存储元件。非易失性存储元件可以由电阻式开关金属氧化物层形成。金属氧化物层可以使用相对低的溅射功率，相对低的占空比和较高的溅射气体压力的溅射沉积形成。掺杂剂可以以小于基底氧化物中的掺杂剂的溶解度极限的原子浓度结合到基底氧化物层中。基底氧化物中的金属的至少一种氧化态优选不同于掺杂剂的至少一种氧化态。可以选择掺杂剂的离子半径和金属的离子半径彼此接近。可以对电阻式开关金属氧化物进行退火和氧化操作。可以制造具有相对较大的电阻率和大的高 - 低 - 电阻率比的双稳态金属氧化物。

79. 发明授权

US07863087B1 Methods for forming resistive-switching metal oxides for nonvolatile memory elements 有权
标题翻译：用于形成用于非易失性存储元件的电阻式开关金属氧化物的方法
公开(公告)号：US07863087B1
公开(公告)日：2011-01-04
申请号：US12114655
申请日：2008-05-02
申请人： Pragati Kumar , Sandra G. Malhotra , Sean Barstow , Tony Chiang
发明人： Pragati Kumar , Sandra G. Malhotra , Sean Barstow , Tony Chiang
IPC分类号： H01L21/00 , H01L21/16 , H01L21/20 , H01L21/36
CPC分类号： H01L45/1625 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation sate of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.
摘要翻译：提供具有电阻开关金属氧化物的非易失性存储元件。非易失性存储元件可以由电阻式开关金属氧化物层形成。金属氧化物层可以使用相对低的溅射功率，相对低的占空比和较高的溅射气体压力的溅射沉积形成。掺杂剂可以以小于基底氧化物中的掺杂剂的溶解度极限的原子浓度结合到基底氧化物层中。基底氧化物中金属的至少一种氧化态优选不同于掺杂剂的至少一种氧化态。可以选择掺杂剂的离子半径和金属的离子半径彼此接近。可以对电阻式开关金属氧化物进行退火和氧化操作。可以制造具有相对较大的电阻率和大的高 - 低 - 电阻率比的双稳态金属氧化物。

80. 发明授权

US07678607B2 Methods for forming resistive switching memory elements 有权
公开(公告)号：US07678607B2
公开(公告)日：2010-03-16
申请号：US11702725
申请日：2007-02-05
申请人： Tony Chiang , Chi-I Lang , Zhi-wen Sun , Jinhong Tong , Nitin Kumar
发明人： Tony Chiang , Chi-I Lang , Zhi-wen Sun , Jinhong Tong , Nitin Kumar
IPC分类号： H01L21/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式