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71. 发明授权

US07429534B2 Etching a nitride-based heterostructure 有权
标题翻译：蚀刻氮化物基异质结构
公开(公告)号：US07429534B2
公开(公告)日：2008-09-30
申请号：US11358303
申请日：2006-02-21
申请人： Remigijus Gaska , Xuhong Hu , Qhalid Fareed , Michael Shur
发明人： Remigijus Gaska , Xuhong Hu , Qhalid Fareed , Michael Shur
IPC分类号： H01L21/461
CPC分类号： H01L21/30621 , B82Y20/00 , H01L29/2003 , H01L29/7787 , H01L33/007 , H01L33/02 , H01S5/2081 , H01S5/34333 , Y10S438/924 , Y10S977/755
摘要： An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch stop layer that includes Indium (In) is included in a heterostructure. An adjacent layer of the heterostructure is selectively etched to expose at least a portion of the etch stop layer. The etch stop layer also can be selectively etched. In one embodiment, the adjacent layer can be etched using reactive ion etching (RIE) and the etch stop layer is selectively etched using a wet chemical etch. In any event, the selectively etched area can be used to generate a contact or the like for a device.
摘要翻译：提供了用于生产氮化物基异质结构，异质结构器件，集成电路和/或微机电系统的改进的解决方案。包括铟（In）的氮化物基蚀刻停止层包括在异质结构中。选择性地蚀刻异相结构的相邻层以露出蚀刻停止层的至少一部分。也可以选择性地蚀刻蚀刻停止层。在一个实施例中，可以使用反应离子蚀刻（RIE）蚀刻相邻层，并且使用湿化学蚀刻来选择性地蚀刻蚀刻停止层。在任何情况下，可以使用选择性蚀刻的区域来为器件产生接触等。

72. 发明授权

US07348606B2 Nitride-based heterostructure devices 有权
标题翻译：基于氮化物的异质结构器件
公开(公告)号：US07348606B2
公开(公告)日：2008-03-25
申请号：US10768944
申请日：2004-01-30
申请人： Muhammad Asif Khan , Remigijus Gaska , Michael Shur , Jinwei Yang
发明人： Muhammad Asif Khan , Remigijus Gaska , Michael Shur , Jinwei Yang
IPC分类号： H01L21/00
CPC分类号： H01L41/314 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/32 , H01L41/18 , Y10S438/93
摘要： A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.
摘要翻译：一种通过使用由AlInGaN构成的四元层来生产氮化物基异质结构器件的方法。四元层可以与不同厚度和组成的三元层结合使用，其通过使用应变补偿分布来独立地调整极化电荷和带偏移以用于器件结构优化。可以通过改变In和Al的摩尔分数的轮廓来调节轮廓。

73. 发明申请

US20070205382A1 ORGANISM GROWTH SUPPRESSION USING ULTRAVIOLET RADIATION 有权
标题翻译：使用超紫外线辐射的有机生长抑制
公开(公告)号：US20070205382A1
公开(公告)日：2007-09-06
申请号：US11380512
申请日：2006-04-27
申请人： Remigijus Gaska , Yuriy Bilenko , Michael Shur
发明人： Remigijus Gaska , Yuriy Bilenko , Michael Shur
IPC分类号： A61L2/10 , A61L9/20
CPC分类号： A61L2/10 , A61L2/23
摘要： A solution for suppressing organism growth using ultraviolet radiation generated by solid state ultraviolet radiation emitters, such as ultraviolet diodes is provided. The invention includes a connection structure that includes a plurality of solid state ultraviolet radiation emitters disposed thereon. Each of the plurality of solid state ultraviolet radiation emitters emits ultraviolet radiation having a wavelength less than or equal to four hundred nanometers to harm a target organism that may be present on a surface. In one embodiment, the connection structure comprises a two-dimensional mesh that may be placed adjacent an air filter, incorporated in a cover, and/or moved with respect to a surface, such as the interior of an air duct. In this manner, the invention can suppress and/or prevent the growth of organisms, such as biofilms and mold, in locations that are susceptible to such growth.
摘要翻译：提供了一种使用紫外线二极管等固体紫外线辐射发射体产生的紫外线照射来抑制生物生长的方法。本发明包括一种连接结构，其包括设置在其上的多个固态紫外线辐射发射器。多个固态紫外线辐射发射体中的每一个发射波长小于或等于四百纳米的紫外线辐射，以损害可能存在于表面上的靶生物体。在一个实施例中，连接结构包括二维网格，其可以放置在与空气过滤器相邻的地方，并入和/或相对于诸如空气管道的内部的表面移动。以这种方式，本发明可以抑制和/或防止生物体如生物膜和霉菌在易受这种生长影响的位置中的生长。

74. 发明申请

US20070171953A1 LED-BASED OPTICAL PUMPING FOR LASER LIGHT GENERATION 有权
标题翻译：基于LED的光学泵浦激光发光
公开(公告)号：US20070171953A1
公开(公告)日：2007-07-26
申请号：US11625925
申请日：2007-01-23
申请人： Michael Shur , Remigijus Gaska
发明人： Michael Shur , Remigijus Gaska
IPC分类号： H01S3/06 , H01S3/091
CPC分类号： H01S3/0933 , H01S3/094084 , H01S5/041 , H01S5/105 , H01S5/36
摘要： Laser light generating solutions are provided that use one or more light emitting diodes to optically pump a laser light generating structure. The laser light generating structure can include organic or inorganic laser material. The light emitting diodes can be located on the same substrate as the laser light generating structure or on a separate substrate that is connected to the substrate with the laser light generating structure. Various other features can be included to enhance the optical pumping and/or enable electrical pumping of the active structure when it includes an inorganic laser material.
摘要翻译：提供了使用一个或多个发光二极管来光学泵浦激光产生结构的激光产生解决方案。激光发生结构可以包括有机或无机激光材料。发光二极管可以位于与激光产生结构相同的衬底上，或者位于与激光产生结构连接到衬底的单独衬底上。当包括无机激光材料时，可以包括各种其它特征以增强光学泵浦和/或使得有源结构的电泵浦。

75. 发明申请

US20070151755A1 MOUNTING STRUCTURE PROVIDING ELECTRICAL SURGE PROTECTION 有权
标题翻译：提供电气防护的安装结构
公开(公告)号：US20070151755A1
公开(公告)日：2007-07-05
申请号：US11465241
申请日：2006-08-17
申请人： Yuriy Bilenko , Remigijus Gaska , Michael Shur , Grigory Simin
发明人： Yuriy Bilenko , Remigijus Gaska , Michael Shur , Grigory Simin
IPC分类号： H05K1/16 , H05K3/30
CPC分类号： H01L23/62 , H01L25/167 , H01L33/62 , H01L2924/0002 , H01L2924/3011 , Y10T29/4913 , Y10T29/49169 , Y10T29/53174 , H01L2924/00
摘要： A solution for protecting an electronic device from an electrical surge using a mounting structure is provided. In particular, the mounting structure comprises a conductive material and is electrically connected to the protected electrical device. The conductive material and/or mounting structure can have one or more properties that prevent the mounting structure from adversely impacting operation of the electronic device during normal operation, but enables the mounting structure to provide an alternative electrical path during the electrical surge.
摘要翻译：提供了一种使用安装结构保护电子设备免受电涌的解决方案。特别地，安装结构包括导电材料并且电连接到受保护的电气设备。导电材料和/或安装结构可以具有防止安装结构在正常操作期间不利地影响电子设备的操作的一个或多个特性，但是使安装结构能够在电涌期间提供替代的电路径。

76. 发明授权

US07192849B2 Methods of growing nitride-based film using varying pulses 有权
标题翻译：使用变化的脉冲生长氮化物基膜的方法
公开(公告)号：US07192849B2
公开(公告)日：2007-03-20
申请号：US10713326
申请日：2003-11-14
申请人： Qhalid Fareed , Remigijus Gaska , Michael Shur
发明人： Qhalid Fareed , Remigijus Gaska , Michael Shur
IPC分类号： H01L21/00
CPC分类号： C23C16/45523 , C23C16/303 , C30B25/02 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639
摘要： Nitride-based film is grown using multiple precursor fluxes. Each precursor flux is pulsed one or more times to add a desired element to the nitride-based film at a desired time. The quantity, duration, timing, and/or shape of the pulses is customized for each element to assist in generating a high quality nitride-based film.
摘要翻译：使用多种前体助熔剂生长氮化物基膜。每个前体通量被脉冲一次或多次，以在期望的时间向氮化物基膜添加所需的元素。针对每个元件定制脉冲的数量，持续时间，定时和/或形状，以帮助产生高质量的基于氮化物的膜。

77. 发明授权

US07095056B2 White light emitting device and method 有权
标题翻译：白光发光装置及方法
公开(公告)号：US07095056B2
公开(公告)日：2006-08-22
申请号：US11001304
申请日：2004-12-01
申请人： Pranci{hacek over (s)}kus Vitta , Arturas Zukauskas , Remigijus Gaska , Michael Shur
发明人： Pranci{hacek over (s)}kus Vitta , Arturas Zukauskas , Remigijus Gaska , Michael Shur
IPC分类号： H01L29/20
CPC分类号： H05B33/0863 , F21K9/00 , F21Y2115/10 , H01L25/0753 , H01L33/50 , H01L2924/0002 , H05B33/0869 , H01L2924/00
摘要： A white light emitting device and method that generate light by combining light produced by a white light source with light produced by at least one supplemental light emitting diode (LED). The supplemental light can be used to adjust one or more properties of the generated light. Adjustments can be made to the generated light based on feedback.
摘要翻译：一种白光发射装置和方法，其通过将由白光源产生的光与由至少一个补充发光二极管（LED）产生的光组合而产生光。补充光可用于调节所产生的光的一个或多个特性。基于反馈可以对生成的光进行调整。

78. 发明授权

US06764888B2 Method of producing nitride-based heterostructure devices 有权
标题翻译：生产氮化物基异质结构器件的方法
公开(公告)号：US06764888B2
公开(公告)日：2004-07-20
申请号：US09966563
申请日：2001-09-27
申请人： Muhammad Asif Khan , Remigijus Gaska , Michael Shur , Jinwei Yang
发明人： Muhammad Asif Khan , Remigijus Gaska , Michael Shur , Jinwei Yang
IPC分类号： H01L21338
CPC分类号： H01L41/314 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/32 , H01L41/18 , Y10S438/93
摘要： A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.
摘要翻译：一种通过使用由AlInGaN构成的四元层来生产氮化物基异质结构器件的方法。四元层可以与不同厚度和组成的三元层结合使用，其通过使用应变补偿分布来独立地调整极化电荷和带偏移以用于器件结构优化。可以通过改变In和Al的摩尔分数的轮廓来调节轮廓。

79. 发明授权

US06201267B1 Compact low power complement FETs 有权
标题翻译：紧凑型低功率补偿FET
公开(公告)号：US06201267B1
公开(公告)日：2001-03-13
申请号：US09260320
申请日：1999-03-01
申请人： Rajesh N. Gupta , Michael Shur
发明人： Rajesh N. Gupta , Michael Shur
IPC分类号： H01L2710
CPC分类号： H01L27/11 , H01L27/092 , H01L27/1108 , H01L27/1203
摘要： A complementary Field Effect Transistor includes a first transistor and a second transistor stacked on the first transistor. The angle between the source/drain pair for the first transistor and the source/drain pair for the second transistor is nonzero and other than 180 degrees (e.g., 90 degrees). In one embodiment, each transistor has its own gate, and the active regions for the transistors are separated and situated between the gates. In another embodiment, the active regions for the transistors share a single channel region. In still another embodiment, the transistors share a single gate. In yet another embodiment, the transistors share both a channel region and a gate.
摘要翻译：互补场效应晶体管包括堆叠在第一晶体管上的第一晶体管和第二晶体管。第一晶体管的源/漏对与第二晶体管的源极/漏极对之间的角度为非零，而不是180度（例如，90度）。在一个实施例中，每个晶体管具有其自己的栅极，并且用于晶体管的有源区域被分离并位于栅极之间。在另一个实施例中，晶体管的有源区共享单个沟道区。在又一个实施例中，晶体管共享一个栅极。在另一个实施例中，晶体管共享沟道区和栅极。

80. 发明授权

US5563902A Semiconductor ridge waveguide laser with lateral current injection 失效
标题翻译：半导体脊波导激光器横向电流注入
公开(公告)号：US5563902A
公开(公告)日：1996-10-08
申请号：US425670
申请日：1995-04-18
申请人： Jingming Xu , Michael Shur , Boris Gelmont
发明人： Jingming Xu , Michael Shur , Boris Gelmont
IPC分类号： H01S5/042 , H01S5/062 , H01S5/10 , H01S5/12 , H01S5/183 , H01S5/42 , H01S3/19 , H01S3/10
CPC分类号： H01S5/18327 , H01S5/0424 , H01S5/06203 , H01S5/101 , H01S5/1017 , H01S5/12 , H01S5/1237 , H01S5/18341 , H01S5/423
摘要： A semiconductor laser device is provided in which an active layer is sandwiched between and upper and lower cladding layer, the lower cladding layer being situated on a semi-insulating substrate. The upper cladding layer includes a raised ridge section running from end to end between the facets or end surfaces of the laser cavity. The ridge section aids in optical confinement. A p+ contact region and an n+ contact region are formed extending though the upper cladding layer, the active region and the lower cladding layer on both sides of the ridge to provide lateral injection of charge carriers into the active region of the laser.
摘要翻译：提供半导体激光器件，其中有源层夹在上下包层之间，下包层位于半绝缘衬底上。上包层包括在激光腔的小面或端面之间从端到端延伸的凸脊部分。脊部分有助于光学限制。通过在脊的两侧延伸穿过上包层，有源区和下包层形成p +接触区和n +接触区，以提供电荷载流子向激光器的有源区域的横向注入。

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