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71. 发明授权

US07106087B2 Method and apparatus for evaluating semiconductor device 失效
标题翻译：用于评估半导体器件的方法和装置
公开(公告)号：US07106087B2
公开(公告)日：2006-09-12
申请号：US11131391
申请日：2005-05-18
申请人： Kenji Okada
发明人： Kenji Okada
IPC分类号： G01R31/26
CPC分类号： G01R31/2648 , G01R31/129 , G11C2029/0403 , G11C2029/5002
摘要： Gate voltage sweeping is performed on a semiconductor element using a multilayer insulating film including a lower insulating film whose thickness is to be obtained. A low voltage peak current mode is extracted from the resultant current-voltage characteristic, so that a peak voltage and a peak current amount in this mode are obtained. The thickness of the lower insulating film is obtained based on the obtained peak voltage or peak current amount and a previously-obtained correlation between the peak voltage or peak current amount and the thickness of the lower insulating film.
摘要翻译：使用包含要获得厚度的下绝缘膜的多层绝缘膜对半导体元件进行栅极电压扫描。从所得到的电流 - 电压特性中提取低电压峰值电流模式，从而获得该模式中的峰值电压和峰值电流量。基于所获得的峰值电压或峰值电流量和先前获得的峰值电压或峰值电流量与下部绝缘膜的厚度之间的相关性，获得下部绝缘膜的厚度。

72. 发明申请

US20050087479A1 Specimen analysis disk and specimen analysis device 审中-公开
标题翻译：样品分析盘和样品分析装置
公开(公告)号：US20050087479A1
公开(公告)日：2005-04-28
申请号：US10501409
申请日：2003-01-22
申请人： Kenji Okada , Kenji Murakami
发明人： Kenji Okada , Kenji Murakami
IPC分类号： G01N33/48 , B01D17/038 , B01L3/00 , G01N33/483 , G01N35/00 , G01N35/02 , G01N35/04
CPC分类号： G01N35/00069 , B01L3/5027 , B01L3/50273 , B01L2200/082 , B01L2200/141 , B01L2300/069 , B01L2300/0803 , B01L2400/0409 , B01L2400/0633 , B01L2400/0688 , G01N2035/00504 , G01N2035/0449
摘要： A specimen analysis disk (1) includes a channel (6) provided therein as extending from an injection hole (5) toward an outer periphery thereof, and is rotatable about an axis thereof by external rotation means to cause a liquid specimen injected into the channel (6) from the injection port (5) to flow through a reagent portion (7) in an analysis area provided midway in the channel toward the outer periphery, wherein a water absorbing member (8) is provided in an outer end portion (6a) of the channel (6). Thus, the liquid specimen caused to reach the outer end portion (6a) by a centrifugal force generated by the rotation is absorbed by the water absorbing member (8), so that the possibility of the back flow and scattering of the liquid specimen can be eliminated and the thickness of the disk can be reduced without the need for the provision of a sump extending in the direction of gravity.
摘要翻译：样品分析盘（1）包括从喷射孔（5）向其外周面延伸设置的通道（6），并且可以通过外部旋转装置使其轴线旋转，从而将液体试样注入通道（6）从注入口（5）流过在通道中间设置在外周的分析区域中的试剂部分（7），其中吸水部件（8）设置在外端部（6） a）通道（6）。因此，通过旋转产生的离心力使到达外端部（6a）的液体试样被吸水部件（8）吸收，液体试样的回流和散射的可能性并且可以减小盘的厚度，而不需要设置在重力方向上延伸的贮槽。

73. 发明授权

US06858448B2 Method for evaluating and manufacturing a semiconductor device 失效
标题翻译：用于评估和制造半导体器件的方法
公开(公告)号：US06858448B2
公开(公告)日：2005-02-22
申请号：US10162539
申请日：2002-06-05
申请人： Kenji Okada
发明人： Kenji Okada
IPC分类号： G01R31/12 , G11C16/34 , G11C29/50 , H01L21/66
CPC分类号： G11C29/50004 , G01R31/129 , G11C16/04 , G11C16/349 , G11C29/50 , G11C29/50016
摘要： A semiconductor device evaluation method includes the steps of measuring a total injected electron quantity before an insulating film causes a dielectric breakdown and obtaining the ratio between the total injected electron quantity and a total injected electron quantity before retention degradation is caused. In this method, using the ratio and the total injected electron quantity, the total injected electron quantity before the retention degradation is caused is calculated.
摘要翻译：半导体器件评估方法包括以下步骤：在绝缘膜引起介电击穿之前测量总注入的电子量，并获得总保持降解之前的总注入电子量与总注入电子量之间的比率。在该方法中，使用比例和总注入电子量，计算出保持性降解前的总注入电子量。

74. 发明授权

US06700730B1 Method of using an integral parameter for correct placement of a read/write head 失效
标题翻译：使用积分参数来正确放置读/写头的方法
公开(公告)号：US06700730B1
公开(公告)日：2004-03-02
申请号：US09856767
申请日：2001-07-16
申请人： Hideki Ohzeki , Kenji Okada , Koichi Takeuchi
发明人： Hideki Ohzeki , Kenji Okada , Koichi Takeuchi
IPC分类号： G11B5596
CPC分类号： G11B21/085
摘要： To provide a disk drive, a manufacturing method thereof, and a disk-drive controller which are capable of improving yield without increasing costs so significantly. When track-following control is performed, HDC detects the current position of a read/write head, based on the reproduced output of a servo sector from a channel unit, and makes a calculation of servo data by employing both an integral parameter corresponding to a target track to be read onto a RAM and the detected current position of the read/write head.
摘要翻译：提供能够在不显着增加成本的情况下提高产量的磁盘驱动器，其制造方法和磁盘驱动控制器。当执行跟踪跟踪控制时，HDC根据来自信道单元的伺服扇区的再现输出来检测读/写头的当前位置，并且通过采用对应于目标轨迹被读取到RAM和读/写头的检测到的当前位置。

75. 发明授权

US06597530B2 Method and apparatus for disk drive seek control 失效
公开(公告)号：US06597530B2
公开(公告)日：2003-07-22
申请号：US09935272
申请日：2001-08-22
申请人： Hideo Asano , Kenji Okada , Tetsuo Ueda , Koichi Arai , Hideki Ohzeki
发明人： Hideo Asano , Kenji Okada , Tetsuo Ueda , Koichi Arai , Hideki Ohzeki
IPC分类号： G11B5596
CPC分类号： G11B5/5547
摘要： A disk drive seek control system device to reduce track pitch. When data is recorded, an offset value is added to the position of a read head element along the width of a track corresponding to an offset &Dgr;w between the read head element and a write head element. The value of the offset depends on the yaw angle &thgr; of the head. When data is read, the position of the read head element is chosen to be either the position of the write head element during write operations, or the midpoint between the position of the write head element and the read head element during write operations, or the center of a track.

76. 发明授权

US06506531B1 Magnetic carrier 有权
标题翻译：磁性载体
公开(公告)号：US06506531B1
公开(公告)日：2003-01-14
申请号：US09434403
申请日：1999-11-05
申请人： Toshiyuki Hakata , Hiroomi Kakihara , Masaaki Fukugauchi , Kenji Okada , Yushi Mikuriya , Kazumi Yoshizaki
发明人： Toshiyuki Hakata , Hiroomi Kakihara , Masaaki Fukugauchi , Kenji Okada , Yushi Mikuriya , Kazumi Yoshizaki
IPC分类号： G03G9113
CPC分类号： G03G9/1135 , G03G9/107 , G03G9/1139
摘要： A magnetic carrier exhibiting excellent durability against mechanical impact as exerted by vibration and capable of exhibiting a stable charging performance in electrophotography is provided. The magnetic carrier is formed through a process including steps of: surface treating inorganic compound particles with a lipophilizing agent having a functional group (A) selected from epoxy group, amino group, mercapto group, organic acid group, ester group, ketone group, halogenated alkyl group and aldehyde group; forming composite particles from the surface-treated inorganic compound particles and a binder resin; and then surface-coating the composite particles with a coupling agent having a functional group (B) different from the functional group (A) of the lipophilizing agent and selected from epoxy group, amino group and mercapto group, or with a coating resin having a functional group (C) different from the functional group (A) of the lipophilizing agent and selected from epoxy group, amino group, organic acid group, ester group, ketone group and halogenated alkyl group.
摘要翻译：本发明提供了一种磁性载体，其通过振动表现出优异的机械冲击耐久性并能够在电子照相术中表现出稳定的充电性能。磁性载体通过以下步骤形成：包括以下步骤形成的无机化合物颗粒：用具有选自环氧基，氨基，巯基，有机酸基，酯基，酮基，卤代的官能团（A）的亲脂性表面处理无机化合物颗粒烷基和醛基; 从表面处理的无机化合物颗粒和粘合剂树脂形成复合颗粒; 然后用具有与脂质体的官能团（A）不同的选自环氧基，氨基和巯基的官能团（B）的偶联剂或与具有官能团（C）与脂肪酶官能团（A）不同，选自环氧基，氨基，有机酸基，酯基，酮基和卤代烷基。

77. 发明授权

US06490115B1 Error recovery in unit using GMR sensor 失效
标题翻译：使用GMR传感器进行单位误差恢复
公开(公告)号：US06490115B1
公开(公告)日：2002-12-03
申请号：US09218724
申请日：1998-12-22
申请人： Hiroaki Suzuki , Koji Kurachi , Katsumi Suda , Hideo Asano , Kenji Okada , Makoto Takase , Akira Kibashi , Hiromi Nishimiya , Takao Matsui , Tatsuya Endo , Kenji Kuroki
发明人： Hiroaki Suzuki , Koji Kurachi , Katsumi Suda , Hideo Asano , Kenji Okada , Makoto Takase , Akira Kibashi , Hiromi Nishimiya , Takao Matsui , Tatsuya Endo , Kenji Kuroki
IPC分类号： G11B2102
CPC分类号： G11B5/09 , G11B19/04
摘要： A method and apparatus for recovering from operation errors arising in an information recording and reproducing unit using a head with a GMR sensor is described. The read and write operations of the unit comprise executing a first error recovery procedure for recovering the operation error, executing a first GMR evaluation procedure for evaluating the performance of the GMR sensor when the operation error cannot be recovered by the first error recovery procedure, and applying a resetting pulse to the GMR sensor in accordance with the first GMR evaluation procedure.
摘要翻译：描述了使用具有GMR传感器的头的信息记录和再现单元中出现的操作错误恢复的方法和装置。该单元的读写操作包括执行用于恢复操作错误的第一错误恢复过程，当通过第一错误恢复过程无法恢复操作错误时，执行用于评估GMR传感器的性能的第一GMR评估过程，以及根据第一GMR评估程序将复位脉冲施加到GMR传感器。

78. 发明授权

US5570220A Apparatus for transmitting lightwave 失效
标题翻译：光波传输装置
公开(公告)号：US5570220A
公开(公告)日：1996-10-29
申请号：US309412
申请日：1994-09-20
申请人： Kenji Matsumoto , Shigeyuki Itoh , Kenji Sano , Jun Kobayashi , Koji Mori , Kenji Okada
发明人： Kenji Matsumoto , Shigeyuki Itoh , Kenji Sano , Jun Kobayashi , Koji Mori , Kenji Okada
IPC分类号： H04B10/00 , H04B10/11 , H04B10/116 , H04B10/548 , H04B10/564 , H04N7/22 , H04N5/225
CPC分类号： H04B10/114 , H04N7/22 , Y10S358/906
摘要： Apparatus for achieving contact-less linking between a transmitting unit and a receiving unit when transmitting video signal, audio signal, control signal, or digital data therebetween. The apparatus includes a switch circuit which switches the output signal of a light emitting integrated circuit to a first set of light guides for spatial transmission of an optical signal representing the video, audio and control signals and digital data and to a second set of light guides for near-by transmission of the optical signal.
摘要翻译：用于在发送单元和接收单元之间发送视频信号，音频信号，控制信号或数字数据之间实现无接触连接的装置。该装置包括开关电路，其将发光集成电路的输出信号切换到第一组光导，用于空间传输表示视频，音频和控制信号以及数字数据的光信号并将其传送到第二组光导用于光信号的近透射。

79. 发明授权

US5562802A Method of producing a quantum device which utilizes the quantum effect 失效
标题翻译：使用量子效应的量子器件的制造方法
公开(公告)号：US5562802A
公开(公告)日：1996-10-08
申请号：US419179
申请日：1995-04-10
申请人： Kenji Okada , Kiyoshi Morimoto , Masaharu Udagawa , Koichiro Yuki , Masaaki Niwa , Yoshihiko Hirai , Juro Yasui
发明人： Kenji Okada , Kiyoshi Morimoto , Masaharu Udagawa , Koichiro Yuki , Masaaki Niwa , Yoshihiko Hirai , Juro Yasui
IPC分类号： H01L29/06 , H01L21/334 , H01L29/10 , H01L29/68 , H01L29/772 , H01L29/88 , B44C1/22 , C03C15/00 , H01L29/161
CPC分类号： B82Y10/00 , B82Y30/00 , H01L29/1037 , H01L29/66931 , H01L29/772 , H01L29/882 , Y10S438/911 , Y10S438/962
摘要： A quantum device including a plate-like conductor part having a necking portion and a method of producing the same are disclosed. The method includes the steps of forming a first mask layer having a first strip portion on a conductor substrate; forming a second mask layer having a second strip portion on the conductor substrate; etching a region of the conductor substrate which is not covered with the first and second mask layers, by using the first and second mask layers as an etching mask, to form a plurality of first recess portions on a surface of the conductor substrate; selectively covering side faces of the plurality of first recess portions, and side faces of the first and second mask layers with a side wall film; selectively removing only the second mask layer, the first mask layer and the side wall film being left unremoved; etching another region of the conductor substrate which is not covered with the first mask layer and the side wall film, by using the first mask layer and the side wall film as an etching mask, to form a plurality of second recess portions on the surface of the conductor substrate; selectively removing part of another region of the surface of the conductor substrate which is not covered with the first mask layer and the side wall film; and removing the first mask layer and the side wall film, to form the plate-like conductor part having the necking portion at the conductor substrate.
摘要翻译：公开了一种包括具有颈缩部的板状导体部的量子装置及其制造方法。该方法包括以下步骤：在导体基板上形成具有第一条带部分的第一掩模层; 在所述导体基板上形成具有第二带状部分的第二掩模层; 通过使用第一和第二掩模层作为蚀刻掩模蚀刻未被第一和第二掩模层覆盖的导体基板的区域，以在导体基板的表面上形成多个第一凹部; 选择性地覆盖所述多个第一凹部的侧面，所述第一和第二掩模层的侧面具有侧壁膜; 仅选择性地除去第二掩模层，第一掩模层和侧壁膜不被去除; 通过使用第一掩模层和侧壁膜作为蚀刻掩模蚀刻未被第一掩模层和侧壁膜覆盖的导体基板的另一区域，以在第一掩模层和侧壁膜的表面上形成多个第二凹部导体基板; 选择性地去除未被第一掩模层和侧壁膜覆盖的导体基板的表面的另一区域的一部分; 并且去除第一掩模层和侧壁膜，以在导体基板上形成具有颈缩部分的板状导体部分。

80. 发明授权

US5543351A Method of producing electrically insulated silicon structure 失效
标题翻译：电绝缘硅结构的制造方法
公开(公告)号：US5543351A
公开(公告)日：1996-08-06
申请号：US331733
申请日：1994-10-31
申请人： Yoshihiko Hirai , Kiyoshi Morimoto , Yasuaki Terui , Masaaki Niwa , Juro Yasui , Kenji Okada , Masaharu Udagawa , Koichiro Yuki
发明人： Yoshihiko Hirai , Kiyoshi Morimoto , Yasuaki Terui , Masaaki Niwa , Juro Yasui , Kenji Okada , Masaharu Udagawa , Koichiro Yuki
IPC分类号： H01L21/335 , H01L29/04 , H01L21/76
CPC分类号： B82Y10/00 , H01L29/045 , H01L29/66439 , Y10S438/962
摘要： A silicon substrate comprises at least two surfaces extending substantially along respective crystal faces of (111) crystal orientation of the silicon, the crystal faces of (111) crystal orientation crossing with each other, an electrically insulating layer formed by oxidizing the silicon substrate from the surfaces, and an electrically conductive portion insulated electrically by the electrically insulating layer from an outside of the silicon substrate.
摘要翻译：硅衬底包括至少两个表面，所述至少两个表面基本上沿着硅的（111）晶体取向的晶面延伸，（111）晶体取向的晶面相互交叉，通过将硅衬底从表面，以及由电绝缘层与硅衬底的外部电绝缘的导电部分。

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