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    • 73. 发明申请
    • Developing apparatus, cartridge and image forming apparatus
    • 显影装置,暗盒和成像装置
    • US20050180784A1
    • 2005-08-18
    • US11002948
    • 2004-12-03
    • Masahiro Yoshida
    • Masahiro Yoshida
    • G03G15/08G03G15/00G03G15/06G03G21/16
    • G03G15/0812
    • A developing apparatus having a developer carrying member for carrying a developer thereon and developing an electrostatic image formed on an image bearing member with a developer, a developer layer thickness regulating member provided in contact with the developer carrying member for regulating the thickness of the layer of the developer carried on the developer carrying member, and an electrically conductive particle provided in the portion of contact between the developer carrying member and the developer layer thickness regulating member, in a state in which the developer does not exist between the developer carrying member and the developer layer thickness regulating member.
    • 一种显影装置,具有用于在其上承载显影剂的显影剂承载构件,并且利用显影剂将形成在图像承载部件上的静电图像显影,显影剂层厚度调节部件设置成与显影剂承载部件接触,用于调节 携带在显影剂承载构件上的显影剂和设置在显影剂承载构件和显影剂层厚度调节构件之间的接触部分中的导电颗粒,其中显影剂不存在于显影剂承载构件和显影剂承载构件之间 显影剂层厚度调节构件。
    • 75. 发明申请
    • A SEMICONDUCTOR DEVICE INCLUDING A MOSFET WITH NITRIDE SIDE WALL
    • 包括具有氮化物侧壁的MOSFET的半导体器件
    • US20050087799A1
    • 2005-04-28
    • US10992082
    • 2004-11-19
    • Masahiro YoshidaShunichi Tokitoh
    • Masahiro YoshidaShunichi Tokitoh
    • H01L21/336H01L29/49H01L29/78H01L31/119
    • H01L29/6659H01L29/4983H01L29/6656H01L29/7833
    • A semiconductor device includes a semiconductor substrate, a gate insulating layer, a gate electrode structure and a side wall structure. The gate insulating layer is formed on the semiconductor substrate. The gate electrode structure is formed on the gate insulating layer, and includes a lower gate electrode layer and a cap gate layer. The side wall structure includes a nitride side wall spacer, and an oxide layer formed between the semiconductor substrate and the nitride side wall spacer and between the lower gate electrode layer and the nitride side wall spacer. A thickness of the oxide layer is greater than a thickness of the gate insulating layer, so as to prevent diffusion of nitrogen from the nitride side wall spacer to the semiconductor substrate. A height of the gate electrode structure is substantially equal to a height of the side wall structure after completion of the semiconductor device.
    • 半导体器件包括半导体衬底,栅极绝缘层,栅电极结构和侧壁结构。 栅绝缘层形成在半导体衬底上。 栅电极结构形成在栅极绝缘层上,并且包括下栅极电极层和盖栅极层。 侧壁结构包括氮化物侧壁间隔物和形成在半导体衬底和氮化物侧壁间隔物之间​​以及下部栅极电极层和氮化物侧壁间隔物之间​​的氧化物层。 氧化物层的厚度大于栅极绝缘层的厚度,以防止氮从氮化物侧壁间隔物扩散到半导体衬底。 栅电极结构的高度与半导体器件完成后的侧壁结构的高度基本相等。
    • 77. 发明申请
    • Boot structure fitting for mechanical joint
    • 机械接头引导结构接头
    • US20050026706A1
    • 2005-02-03
    • US10886543
    • 2004-07-09
    • Isashi KashiwagiMasahiro Yoshida
    • Isashi KashiwagiMasahiro Yoshida
    • F16J15/52F16D3/84F16J3/04
    • F16J3/042F16D3/845Y10T403/31
    • A boot structure fitting into an axial component to protect from wrong environment including outside dust. Said boot has a pair of annular grooves and an annular lip between said pair of annular grooves on inner surface of said boot. Said annular lip is formed so that the annular lip top is not projected from inner surface to centerline of the boot. An annular protuberance means between said boot and clamping means, through which clamping force from said clamping means is exerted in concentration to said annular lip so that said annular lip is elastically deformed and pushed to outside of said axial component. Therefore, the axial component enables to be inserted into the boot without interference between the annular lip and the axial component. Furthermore, the annular lip becomes to be free from damage by interference between the annular lip and the axial component.
    • 安装在轴向部件中的靴子结构,以防止包括外部灰尘在内的错误环境。 所述靴子具有一对环形槽和在所述靴子的内表面上的所述一对环形槽之间的环形唇缘。 所述环形唇形成为使得环形唇顶不从靴的内表面到中心线突出。 一种位于所述护罩和夹紧装置之间的环形突起装置,来自所述夹持装置的夹紧力通过所述环形凸起集中施加到所述环形唇缘上,使得所述环形唇缘弹性变形并被推到所述轴向部件的外部。 因此,轴向部件能够在环形唇缘和轴向部件之间不受干扰地插入靴子中。 此外,环形唇缘变得不受环形唇缘和轴向部件之间的干涉的损害。