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71. 发明申请

US20060268953A1 Nitride semiconductor device and method for fabricating the same 失效
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20060268953A1
公开(公告)日：2006-11-30
申请号：US11437642
申请日：2006-05-22
申请人： Norio Ikedo , Yasuyuki Fukushima , Masaaki Yuri
发明人： Norio Ikedo , Yasuyuki Fukushima , Masaaki Yuri
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/0213 , H01S2301/173 , H01S2304/04
摘要： A nitride semiconductor device comprises: a well layer of nitride semiconductor containing In and Ga; barrier layers of nitride semiconductor sandwiching the well layer, containing Al and Ga, and having a larger band gap energy than the well layer; and a thin film layer provided between the well layer and the barrier layer. The thin film layer is formed during lowering of the substrate temperature after formation of the barrier layer or during elevation of the substrate temperature after formation of the well layer.
摘要翻译：氮化物半导体器件包括：包含In和Ga的氮化物半导体的阱层; 氮化物半导体的阻挡层夹着包含Al和Ga的阱层，并且具有比阱层更大的带隙能量; 以及设置在阱层和阻挡层之间的薄膜层。在形成阻挡层之后或在形成阱层之后衬底温度升高期间，衬底温度降低期间形成薄膜层。

72. 发明授权

US06810057B1 Semiconductor device and optical pickup device 失效
标题翻译：半导体器件和光学拾取器件
公开(公告)号：US06810057B1
公开(公告)日：2004-10-26
申请号：US09718568
申请日：2000-11-22
申请人： Kunio Itoh , Nobuyuki Uemura , Masaaki Yuri
发明人： Kunio Itoh , Nobuyuki Uemura , Masaaki Yuri
IPC分类号： H01S500
CPC分类号： G11B7/1362 , G11B7/123 , G11B7/22 , G11B2007/0006 , H01S5/02236 , H01S5/02248 , H01S5/02292 , H01S5/4012
摘要： A semiconductor device having a plurality of semiconductor laser elements is provided, which is capable of reducing an interval of emission points between the semiconductor laser elements and also capable of preventing heat generated by a semiconductor laser element from affecting other semiconductor elements. A concave portion is formed on a silicon substrate, and a protrusion of a quadrangular truncated pyramidal shape consisting of slanted faces of a (1 1 1) plane, a (1 {overscore (1)} 1) plane, a ({overscore (1)} {overscore (1)} 1) plane and a ({overscore (1)} 1 1) plane is formed near the center of the concave portion by using the silicon process. Among these slanted faces, a (1 1 1) outer face and a (1 1 1) inner face are determined to be reflecting mirror surfaces. The semiconductor laser elements respectively are fixed on small protrusions formed on the concave portion, and a photodetector for receiving light beams L1′ and L2′ returning from an optical disc is disposed on a top face of the protrusion.
摘要翻译：提供具有多个半导体激光元件的半导体器件，其能够减小半导体激光元件之间的发射点的间隔，并且还能够防止由半导体激光元件产生的热量影响其他半导体元件。在硅衬底上形成凹部，并且由（111）面，（（过（1）面），（（超（1）面）通过使用硅工艺在凹部的中心附近形成超芯（11）面和（超（11）面），在这些倾斜面中，（1111）外表面和（11 1）内表面被确定为反射镜表面，半导体激光元件分别固定在形成在凹部上的小突起上，并且用于接收从光盘返回的光束L1'和L2'的光电检测器设置在顶部突起面。

73. 发明授权

US06292500B1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06292500B1
公开(公告)日：2001-09-18
申请号：US09292013
申请日：1999-04-15
申请人： Yasuyuki Kouchi , Hideyuki Nakanishi , Masaaki Yuri , Akio Yoshikawa , Hisanori Ishiguro
发明人： Yasuyuki Kouchi , Hideyuki Nakanishi , Masaaki Yuri , Akio Yoshikawa , Hisanori Ishiguro
IPC分类号： H01S300
CPC分类号： H01S5/042 , H01L2224/48091 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/1305 , H01S5/02248 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser device of the present invention includes: a semiconductor laser chip including an anode and a cathode; and a field effect transistor. The anode of the semiconductor laser chip is connected to the drain of the field effect transistor. The gate of the field effect transistor is connected to the drain of the field effect transistor. And the cathode of the semiconductor laser chip is connected to the source of the field effect transistor.
摘要翻译：本发明的半导体激光器件包括：包括阳极和阴极的半导体激光器芯片; 和场效应晶体管。半导体激光芯片的阳极连接到场效应晶体管的漏极。场效应晶体管的栅极连接到场效应晶体管的漏极。并且半导体激光芯片的阴极连接到场效应晶体管的源极。

74. 发明授权

US06197441B1 Cubic nitride semiconductor device and fabrication method of the same 失效
标题翻译：立方氮化物半导体器件及其制造方法
公开(公告)号：US06197441B1
公开(公告)日：2001-03-06
申请号：US09124889
申请日：1998-07-30
申请人： Masaaki Yuri , Tetsuzo Ueda , Takaaki Baba
发明人： Masaaki Yuri , Tetsuzo Ueda , Takaaki Baba
IPC分类号： H01L21203
CPC分类号： C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/0254 , H01L21/02631 , H01L21/02658
摘要： The object of the present invention is to form a cubic nitride semiconductor layer of excellent surface flatness and crystallization on a cubic III-V family compound semiconductor substrate, featuring a fabrication method that comprises the steps of forming a cubic semiconductor layer 2 containing aluminum, nitriding one surface of the semiconductor layer 2 by heating in an atmosphere of a nitrogen compound and then supplying a nitrogen compound and a compound containing III family elements to form a cubic nitride semiconductor layer 3 on the semiconductor layer 2.
摘要翻译：本发明的目的是在立方体III-V族化合物半导体衬底上形成表面平整度和结晶度优异的立方氮化物半导体层，其特征在于包括以下步骤：形成含铝的立方半导体层2，氮化在氮化合物的气氛中加热半导体层2的一个表面，然后在半导体层2上提供氮化合物和含有III族元素的化合物以形成立方氮化物半导体层3。

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