专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US08084865B2 Anchoring structure and intermeshing structure 有权
标题翻译：锚固结构和啮合结构
公开(公告)号：US08084865B2
公开(公告)日：2011-12-27
申请号：US12112588
申请日：2008-04-30
申请人： Franz Hirler , Walter Rieger , Uwe Schmalzbauer , Rudolf Zelsacher , Markus Zundel
发明人： Franz Hirler , Walter Rieger , Uwe Schmalzbauer , Rudolf Zelsacher , Markus Zundel
IPC分类号： H01L23/528 , H01L21/768
CPC分类号： H01L29/7813 , H01L21/743 , H01L23/535 , H01L29/407 , H01L29/4236 , H01L29/42372 , H01L29/4238 , H01L29/7811 , H01L2924/0002 , H01L2924/00
摘要： An anchoring structure for a metal structure of a semiconductor device includes an anchoring recess structure having at least one overhanging side wall, the metal structure being at least partly arranged within the anchoring recess structure.
摘要翻译：用于半导体器件的金属结构的锚定结构包括具有至少一个悬垂侧壁的锚固凹槽结构，金属结构至少部分地布置在锚定凹槽结构内。

72. 发明申请

US20110095336A1 LATERAL HEMT AND METHOD FOR THE PRODUCTION OF A LATERAL HEMT 有权
标题翻译：横向HEMT和生产横向HEMT的方法
公开(公告)号：US20110095336A1
公开(公告)日：2011-04-28
申请号：US12605751
申请日：2009-10-26
申请人： Markus Zundel , Franz Hirler , Walter Rieger
发明人： Markus Zundel , Franz Hirler , Walter Rieger
IPC分类号： H01L29/778 , H01L29/205
CPC分类号： H01L29/404 , H01L29/2003 , H01L29/66462 , H01L29/7786
摘要： In one embodiment a lateral HEMT has a first layer, the first layer including a semiconducting material, and a second layer, the second layer including a semiconducting material and being at least partially arranged on the first layer. The lateral HEMT further has a passivation layer and a drift region, the drift region including a lateral width wd. The lateral HEMT further has at least one field plate, the at least one field plate being arranged at least partially on the passivation layer in a region of the drift region and including a lateral width wf, wherein wf
摘要翻译：在一个实施例中，横向HEMT具有第一层，第一层包括半导体材料和第二层，第二层包括半导体材料并且至少部分地布置在第一层上。横向HEMT还具有钝化层和漂移区域，漂移区域包括横向宽度wd。横向HEMT还具有至少一个场板，所述至少一个场板至少部分地布置在所述漂移区域的区域中的钝化层上，并且包括横向宽度wf，其中wf

73. 发明申请

US20100264462A1 SEMICONDUCTOR INCLUDING LATERAL HEMT 有权
标题翻译：半导体包括横向HEMT
公开(公告)号：US20100264462A1
公开(公告)日：2010-10-21
申请号：US12764669
申请日：2010-04-21
申请人： Franz Hirler , Walter Rieger , Markus Zundel
发明人： Franz Hirler , Walter Rieger , Markus Zundel
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/778 , H01L29/0619 , H01L29/0623 , H01L29/0653 , H01L29/1075 , H01L29/2003 , H01L29/402 , H01L29/41766 , H01L29/66462 , H01L29/7786
摘要： A semiconductor including a lateral HEMT and to a method for production of a lateral HEMT is disclosed. In one embodiment, the lateral HEMT has a substrate and a first layer, wherein the first layer has a semiconductor material of a first conduction type and is arranged at least partially on the substrate. Furthermore, the lateral HEMT has a second layer, wherein the second layer has a semiconductor material and is arranged at least partially on the first layer. In addition, the lateral HEMT has a third layer, wherein the third layer has a semiconductor material of a second conduction type, which is complementary to the first conduction type, and is arranged at least partially in the first layer.
摘要翻译：公开了包括横向HEMT的半导体和用于制造横向HEMT的方法。在一个实施例中，横向HEMT具有衬底和第一层，其中第一层具有第一导电类型的半导体材料并且至少部分地布置在衬底上。此外，横向HEMT具有第二层，其中第二层具有半导体材料并且至少部分地布置在第一层上。此外，横向HEMT具有第三层，其中第三层具有与第一导电类型互补的第二导电类型的半导体材料，并且至少部分地布置在第一层中。

74. 发明申请

US20100078716A1 Semiconductor component and method for producing a semiconductor component 审中-公开
标题翻译：半导体元件的制造方法及半导体元件的制造方法
公开(公告)号：US20100078716A1
公开(公告)日：2010-04-01
申请号：US12568915
申请日：2009-09-29
申请人： Erwin Bacher , Andreas Behrendt , Joerg Ortner , Walter Rieger , Rudolf Zelsacher , Markus Zundel
发明人： Erwin Bacher , Andreas Behrendt , Joerg Ortner , Walter Rieger , Rudolf Zelsacher , Markus Zundel
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L21/76224 , H01L29/0657 , H01L29/0696 , H01L29/407 , H01L29/7803 , H01L29/7804 , H01L29/7811 , H01L29/7813 , H01L29/861
摘要： A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench.
摘要翻译：半导体部件包括在半导体本体中具有至少一个保护沟槽的半导体本体。绝缘层至少位于保护沟槽的底部。在保护沟槽中的绝缘层上形成具有厚度D的导电层，其中导电层仅部分地填充保护沟槽。

75. 发明申请

US20090218618A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20090218618A1
公开(公告)日：2009-09-03
申请号：US12041391
申请日：2008-03-03
申请人： Oliver Blank , Uli Hiller , Maximilian Roesch , Walter Rieger
发明人： Oliver Blank , Uli Hiller , Maximilian Roesch , Walter Rieger
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41741 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/66734
摘要： A semiconductor device and method. One embodiments provides a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material, a field electrode formed in lower portion of the trench, a cover comprising a second material above the field electrode, the second material being selectively etchable to the first isolating material, a gate dielectric on the sidewall in an upper portion of the trench and a gate electrode in the upper portion of the trench.
摘要翻译：半导体器件和方法。一个实施例提供了具有沟槽的半导体衬底，侧壁隔离包括第一隔离材料，形成在沟槽下部的场电极，覆盖在场电极上方的第二材料，第二材料可选择性地蚀刻到第一隔离材料，在沟槽的上部中的侧壁上的栅极电介质和沟槽上部的栅电极。

76. 发明授权

US07541260B2 Trench diffusion isolation in semiconductor devices 有权
标题翻译：半导体器件中的沟槽扩散隔离
公开(公告)号：US07541260B2
公开(公告)日：2009-06-02
申请号：US11677430
申请日：2007-02-21
申请人： Frank Pfirsch , Walter Rieger
发明人： Frank Pfirsch , Walter Rieger
IPC分类号： H01L21/76
CPC分类号： H01L29/0634 , H01L29/66727
摘要： A semiconductor structure is formed comprising a plurality of columns doped with alternating dopants. The columns are separated by trenches, and the dopant is diffused in the doped columns. The trenches are filled with semiconductor material. Other embodiments may be described and claimed.
摘要翻译：形成包括掺杂有交替掺杂剂的多个列的半导体结构。这些列由沟槽分开，并且掺杂剂在掺杂柱中扩散。沟槽填充有半导体材料。可以描述和要求保护其他实施例。

77. 发明授权

US07005351B2 Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration 有权
标题翻译：一种晶体管配置方法，包括具有场电极，沟槽晶体管和沟槽结构的沟槽晶体管单元
公开(公告)号：US07005351B2
公开(公告)日：2006-02-28
申请号：US10392024
申请日：2003-03-19
申请人： Ralf Henninger , Franz Hirler , Joachim Krumrey , Walter Rieger , Martin Pölzl , Heimo Hofer
发明人： Ralf Henninger , Franz Hirler , Joachim Krumrey , Walter Rieger , Martin Pölzl , Heimo Hofer
IPC分类号： H01L21/336
CPC分类号： H01L29/7811 , H01L29/402 , H01L29/407 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813
摘要： A method for fabricating a transistor configuration including at least one trench transistor cell has a gate electrode and a field electrode disposed in a trench below the gate electrode. The trenches are formed in a semiconductor substrate. A drift zone, a channel zone, and a source zone are in each case provided in the semiconductor substrate. According to the invention, the source zone and/or the channel zone are formed at the earliest after the introduction of the trenches into the semiconductor substrate by implantation and diffusion.
摘要翻译：制造包括至少一个沟槽晶体管单元的晶体管配置的方法具有设置在栅电极下方的沟槽中的栅电极和场电极。沟槽形成在半导体衬底中。在半导体衬底中设置漂移区，沟道区和源极区。根据本发明，在通过注入和扩散将沟槽引入半导体衬底之后，最初形成源极区和/或沟道区。

78. 发明申请

US20060035441A1 Method for processing a thin semiconductor substrate 有权
标题翻译：薄半导体衬底的处理方法
公开(公告)号：US20060035441A1
公开(公告)日：2006-02-16
申请号：US10954763
申请日：2004-09-30
申请人： Walter Rieger
发明人： Walter Rieger
IPC分类号： H01L21/30 , H01L21/44
CPC分类号： H01L21/6831
摘要： A method for processing a semiconductor substrate less than 200 μm thick has been provided. The substrate has one or a plurality of semiconductor elements, which may be identical or different. The substrate is arranged onto a chuck during processing, the front side of the substrate facing the chuck. During processing, an electrically conductive film, for example, made of metal, may be applied on the rear side of the substrate. The film may serve as electrical contact, heat sink or mechanical stabilizer.
摘要翻译：已经提供了一种用于处理小于200μm厚的半导体衬底的方法。衬底具有一个或多个半导体元件，其可以相同或不同。基板在加工过程中被布置在卡盘上，基板的前侧面向卡盘。在处理过程中，例如由金属制成的导电膜可以施加在基板的后侧。该膜可用作电接触，散热器或机械稳定剂。

79. 发明授权

US5363683A Forming machine 失效
标题翻译：成型机
公开(公告)号：US5363683A
公开(公告)日：1994-11-15
申请号：US147536
申请日：1993-11-05
申请人： Karl Thudium , Walter Rieger
发明人： Karl Thudium , Walter Rieger
IPC分类号： B21D43/05 , B30B15/30 , B65G25/02
CPC分类号： B21D43/057 , B21D43/05
摘要： A transfer press or similar forming machine is provided with a transfer device having holding devices for the gripping and transport of sheet metal parts. During the transfer movement of the sheet metal parts from one machining stage to the next, the sheet metal parts are deposited intermediately on an intermediate depositing device. The intermediate depositing device takes over a partial path of the transfer so that the movement of the holding devices is less than half the distance between the machining stages.
摘要翻译：转印机或类似的成型机设置有具有用于夹持和输送钣金零件的保持装置的转印装置。在将金属板零件从一个加工阶段转移到下一个阶段期间，将金属片部件沉积在中间沉积装置上。中间沉积装置接收传送的部分路径，使得保持装置的移动小于加工阶段之间的距离的一半。

80. 发明授权

US4924692A Transfer press having gripper rails which can be transversely separated along their length 失效
标题翻译：转印机具有可沿其长度横向分离的夹持轨道
公开(公告)号：US4924692A
公开(公告)日：1990-05-15
申请号：US337758
申请日：1989-04-13
申请人： Walter Rieger , Karl Thudium
发明人： Walter Rieger , Karl Thudium
IPC分类号： B21D43/05
CPC分类号： B21D43/057
摘要： In a transfer press, the gripper rails consist of gripper rail parts located at the press and exchangeable gripper rail parts. In operation, the gripper rail parts must be rigidly connected with one another. For this purpose, a coupling element utilizing a rotary tightening device is inserted in one gripper rail part and has a tension rod which can be braced with T-shaped head behind a coupling surface of a gripper rail part located at the side of the press. Flange facings are machined into front faces of the gripper rail parts. These flange facings have flat surfaces which extend parallel to the direction of the lifting and lowering movement of gripper rail parts and the direction of the opening and closing positioning movement of a sliding table carrying exchangeable gripper rail part. The gripper rail parts are separated along the flat end surfaces of the flange facings and do not require longitudinal displacement to provide a separation gap.
摘要翻译：在转印机中，夹持器轨道由位于压力机和可更换的夹持器轨道部分的夹持轨道部分组成。在操作中，夹持器轨道部分必须彼此刚性地连接。为此，利用旋转紧固装置的联接元件被插入到一个夹持器轨道部分中，并且具有张紧杆，其可以在位于压力机侧面的夹持器轨道部分的联接表面后面被T形头部支撑。法兰面加工成夹具轨道部件的前表面。这些凸缘面具有平行于夹持器轨道部分的提升和下降运动方向延伸的平面以及承载可更换夹持轨道部分的滑动台的打开和关闭定位运动的方向。夹持器轨道部分沿着凸缘面的平坦端面分开，并且不需要纵向位移以提供间隔。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式