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    • 71. 发明授权
    • Deposition of stable dielectric films
    • 沉积稳定的介电膜
    • US06511923B1
    • 2003-01-28
    • US09574404
    • 2000-05-19
    • Yaxin WangMichael BarnesThanh N. PhamFarhad Moghadam
    • Yaxin WangMichael BarnesThanh N. PhamFarhad Moghadam
    • H01L2131
    • H01L21/31053H01L21/31629
    • A composite insulating film including three layers is formed on a substrate having a gap. The first layer partially fills the gap and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. The second layer is formed over the first layer, and contains an undoped dielectric material such as silicon oxide, nitride, or oxynitride. The second layer is more stable and integrable, and less susceptible to moisture absorption and outgassing, than the first layer. The second layer is substantially smaller in thickness than the first layer, and at least substantially fills the gap. The third layer is formed over the second layer, and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. In a specific embodiment, the first layer is formed by plasma-enhanced chemical vapor deposition in which reactive species are generated from a process gas mixture by plasma for sputtering the first layer.
    • 在具有间隙的基板上形成包括三层的复合绝缘膜。 第一层部分地填充间隙并且包含具有低介电常数的介电材料,例如掺杂卤素的硅酸盐玻璃。 第二层形成在第一层上,并且包含未掺杂的介电材料,例如氧化硅,氮化物或氧氮化物。 第二层比第一层更稳定和可整合,较不易吸潮和脱气。 第二层的厚度明显小于第一层,并且至少基本上填充间隙。 第三层形成在第二层上,并且包含具有低介电常数的电介质材料,例如卤素掺杂的硅酸盐玻璃。 在具体实施例中,第一层通过等离子体增强化学气相沉积形成,其中通过等离子体从工艺气体混合物产生反应性物质以溅射第一层。
    • 72. 发明授权
    • Method and apparatus for improving etch and deposition uniformity in
plasma semiconductor processing
    • 改善等离子体半导体处理中的蚀刻和沉积均匀性的方法和装置
    • US06042687A
    • 2000-03-28
    • US885346
    • 1997-06-30
    • Vikram SinghBrian McMillinTom NiMichael BarnesRichard Yang
    • Vikram SinghBrian McMillinTom NiMichael BarnesRichard Yang
    • H01J37/32H05H1/00H01L21/00
    • H01J37/3244H01J37/321
    • A plasma processing system and method for processing substrates such as by chemical vapor deposition or etching. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a primary gas supply supplying a primary gas such as process gas into the chamber, a secondary gas supply supplying a secondary gas such as a substantially inert, a substrate passivating or a reactant scavenging gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the primary gas into a plasma state. The secondary gas is concentrated near the periphery of the substrate, improving etching/deposition uniformity across the substrate surface.
    • 一种等离子体处理系统和方法,用于通过化学气相沉积或蚀刻来处理衬底。 该系统包括等离子体处理室,用于在处理室内支撑衬底的衬底支撑件,具有面向衬底支撑件的内表面的电介质构件,形成处理室壁的电介质构件, 将诸如工艺气体的气体引入室中,将诸如基本惰性的二次气体,基底钝化或反应物清除气体的二次气体供给到腔室中,以及RF能量源,例如平面线圈,其感应耦合RF能量 通过电介质构件并进入腔室以将主气体激发成等离子体状态。 二次气体集中在衬底的周边附近,从而提高衬底表面的蚀刻/沉积均匀性。
    • 74. 发明授权
    • Latch construction
    • 锁结构
    • US5044679A
    • 1991-09-03
    • US484799
    • 1990-02-26
    • Michael BarnesJoseph Koskelowsky
    • Michael BarnesJoseph Koskelowsky
    • E05B35/00
    • E05B35/008Y10T292/1041Y10T292/1089
    • A releasable latch construction having a body member attachable to a panel, a latching member turnable on the body member for arcuate movement between a latching position and a releasing position, a locking mechanism movably carried by the body member and operable to lock the latching member in either its latching position or else in its releasing position, and an actuator movably carried in the body member and engageable with the locking mechanism, for effecting the locking or releasing movement of the latching member. The actuator is directly engageable by a latch key and is shiftable thereby in order to effect such movements.
    • 一种可释放的闩锁构造,其具有可附接到面板的主体构件,可在主体构件上转动的闩锁构件,用于在闩锁位置和释放位置之间弓形运动;锁定机构,可由主体构件可移动地承载并可操作以将闩锁构件锁定 或者其闩锁位置,或者处于其释放位置,以及可移动地承载在本体构件中并与锁定机构接合的致动器,用于实现闩锁构件的锁定或释放运动。 致动器可通过闩锁键直接接合,并且可由此移动以便实现这种运动。
    • 77. 发明授权
    • Bag seal mounting plate with breather tube
    • 袋密封安装板带呼吸管
    • US08419387B1
    • 2013-04-16
    • US12491985
    • 2009-06-25
    • Randy KarbsMichael BarnesAlan HowellArcady Royzen
    • Randy KarbsMichael BarnesAlan HowellArcady Royzen
    • F04B17/00F04B35/04
    • F04B47/02F04B53/02
    • A submersible pumping system includes a pump assembly, a motor and a seal section positioned between the pump assembly and the motor. The seal section includes a clean fluid circulation system, a contaminated fluid circulation system and at least one bag seal assembly. The bag seal assembly includes an upper mounting block, a lower mounting block and a bag seal extending over the upper mounting block and lower mounting block and providing a path for the clean fluid circulation system. The bag seal assembly further includes a mounting plate connected to the upper mounting block that limits the axial travel of the bag seal on the upper mounting block. The bag seal assembly optionally includes a breather tube connected to the mounting plate and extending along the exterior of the bag seal.
    • 潜水泵系统包括泵组件,马达和位于泵组件和马达之间的密封段。 密封部分包括清洁的流体循环系统,污染的流体循环系统和至少一个袋密封组件。 袋密封组件包括上安装块,下安装块和在上安装块和下安装块上延伸的袋密封件,并提供用于清洁流体循环系统的路径。 袋密封组件还包括连接到上安装块的安装板,其限制袋密封件在上安装块上的轴向行程。 袋密封组件可选地包括连接到安装板并沿着袋密封件的外部延伸的通气管。