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71. 发明授权

US08093601B2 Active matrix substrate 有权
标题翻译：有源矩阵基板
公开(公告)号：US08093601B2
公开(公告)日：2012-01-10
申请号：US12442870
申请日：2007-09-25
申请人： Tadayoshi Miyamoto , Mitsuhiro Tanaka
发明人： Tadayoshi Miyamoto , Mitsuhiro Tanaka
IPC分类号： H01L31/00 , H01L29/04
CPC分类号： H01L27/124 , G02F1/136204
摘要： In an active matrix substrate (100) of the present invention, a gate bus line (105) and a gate electrode (166) extend in the first direction (the x direction). At a contact portion (168) for electrically connecting the gate bus line (105) with the drain regions of a first-conductivity-type transistor section (162) and a second-conductivity-type transistor section (164), the direction of the straight line (L1) of the shortest distance (d1) between one of a plurality of first-conductivity-type drain connecting portions (168c) that is closest to the gate bus line (105) and the gate bus line (105) is inclined with respect to the second direction (the y direction).
摘要翻译：在本发明的有源矩阵基板（100）中，栅极总线（105）和栅电极（166）沿第一方向（x方向）延伸。在用于将栅极总线（105）与第一导电型晶体管部分（162）和第二导电型晶体管部分（164）的漏极区域电连接的接触部分（168）处，与栅极总线（105）最接近的多个第一导电型漏极连接部（168c）中的一个与栅极总线（105）之间的最短距离（d1）的直线（L1）倾斜相对于第二方向（y方向）。

72. 发明授权

US07479658B2 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers 有权
标题翻译：外延晶片，外延晶片的制造方法，使用这些外延晶片抑制这些外延晶片的弯曲的方法和半导体多层结构
公开(公告)号：US07479658B2
公开(公告)日：2009-01-20
申请号：US10909477
申请日：2004-08-02
申请人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
发明人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10T428/24942
摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.
摘要翻译：提供了抑制外延晶片弯曲的技术。通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。中间层主要由通式（GaxIny）N（0 <= x <= 1,0 <= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或 GaN），不含Al。中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃至不超过1000℃的温度下外延形成。

73. 再颁专利

USRE40485E1 Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：USRE40485E1
公开(公告)日：2008-09-09
申请号：US11140524
申请日：2005-05-27
申请人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
发明人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L33/325 , H01L33/08
摘要： In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.
摘要翻译：在半导体发光元件中，底层由AlN层构成，第一包层由n-AlGaN层构成。发光层由由i-GaN制成的基底层和在基底层中分离的由i-AlGaInN构成的多个岛状单晶部分构成。然后，在基底层和/或岛状单晶部分中并入至少一种稀土金属元素。

74. 发明申请

US20060150895A1 Apparatus for fabricating a III-V nitride film and a method for fabricating the same 失效
公开(公告)号：US20060150895A1
公开(公告)日：2006-07-13
申请号：US11324940
申请日：2006-01-04
申请人： Tomohiko Shibata , Keiichiro Asai , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Keiichiro Asai , Mitsuhiro Tanaka
IPC分类号： C30B11/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1008
摘要： A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

75. 发明授权

US07033439B2 Apparatus for fabricating a III-V nitride film and a method for fabricating the same 失效
公开(公告)号：US07033439B2
公开(公告)日：2006-04-25
申请号：US09928523
申请日：2001-08-13
申请人： Tomohiko Shibata , Keiichiro Asai , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Keiichiro Asai , Mitsuhiro Tanaka
IPC分类号： C30B25/08
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , Y10T117/10 , Y10T117/1008
摘要： A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III–V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method.The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

76. 发明授权

US06869702B2 Substrate for epitaxial growth 有权
标题翻译：用于外延生长的基板
公开(公告)号：US06869702B2
公开(公告)日：2005-03-22
申请号：US10738187
申请日：2003-12-17
申请人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Shigeaki Sumiya , Keiichiro Asai , Mitsuhiro Tanaka
IPC分类号： C30B25/02 , C30B25/18 , C30B29/38 , H01L21/20 , H01L21/205 , B32B9/04
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , Y10T428/12528 , Y10T428/265
摘要： A substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is provided. A nitride film containing at least Al is formed on a 6H—SiC base by CVD at a temperature of at least 1100° C., for example. The substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is obtained by setting the dislocation density of the nitride film to not more than 1×1011/cm2, the full width at half maximum of an X-ray rocking curve for (002) plane to not more than 200 seconds and the full width at the half maximum of the X-ray rocking curve for (102) plane to not more than 1500 seconds.
摘要翻译：提供了用于外延生长的衬底，其能够形成具有高晶体质量的含Al的III族氮化物膜。至少含有Al的氮化物膜例如在至少1100℃的温度下通过CVD在6H-SiC基底上形成。通过将氮化物膜的位错密度设定为1×10 11 / cm 2以下，可以得到具有高结晶质量的含Al III族氮化物膜的外延生长用基板，全宽为半（002）平面的X射线摇摆曲线的最大值不大于200秒，（102）平面的X射线摇摆曲线半峰全宽不大于1500秒。

77. 发明申请

US20050028888A1 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers 有权
标题翻译：外延晶片，外延晶片的制造方法，使用这些外延晶片抑制这些外延晶片的弯曲的方法和半导体多层结构
公开(公告)号：US20050028888A1
公开(公告)日：2005-02-10
申请号：US10909477
申请日：2004-08-02
申请人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
发明人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
IPC分类号： C30B25/20 , C30B29/40 , H01L21/205 , H01L33/12 , H01L33/32 , H01L29/00 , C30B1/00 , H01L21/00
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10T428/24942
摘要： A technique for suppressing bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer, mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), does not contains Al. The interlayer is epitaxially formed at a growth temperature lower than those of the group III-nitride layers, more specifically at a temperature of at least 350° C. and not more than 1000° C.
摘要翻译：提供了一种用于抑制外延晶片弯曲的技术。通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。主要由通式（GaxIny）N（0≤x≤1,0<= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或者由 GaN），不含有Al。中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃和不高于1000℃的温度下外延形成。

78. 发明授权

US06707076B2 Semiconductor element 有权
公开(公告)号：US06707076B2
公开(公告)日：2004-03-16
申请号：US10370350
申请日：2003-02-18
申请人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
发明人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
IPC分类号： H01L29739
CPC分类号： H01L29/66318 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66462 , H01L29/66856
摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

79. 发明授权

US06597023B2 Semiconductor light-detecting element 有权
公开(公告)号：US06597023B2
公开(公告)日：2003-07-22
申请号：US10147046
申请日：2002-05-17
申请人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
发明人： Tomohiko Shibata , Keiichiro Asai , Shigeaki Sumiya , Mitsuhiro Tanaka
IPC分类号： H01L31304
CPC分类号： H01L31/1852 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L31/0304 , H01L31/105 , H01L33/007 , Y02E10/544
摘要： A semiconductor light-detecting element includes a given substrate, an underlayer and a light-detecting element structure which are formed on said substrate in turn. The underlayer is made of a nitride semiconductor including Al element with a dislocation density of 1011/cm2 or below. The light-detecting element structure is made of a nitride semiconductor layer group including Al element at a larger content than the nitride semiconductor making the underlayer with a dislocation density of 1010/cm2 or below.

80. 发明授权

US06316068B1 Elastomer composition 有权
标题翻译：弹性体组成
公开(公告)号：US06316068B1
公开(公告)日：2001-11-13
申请号：US09149996
申请日：1998-09-09
申请人： Tetsuo Masubuchi , Mitsuhiro Tanaka
发明人： Tetsuo Masubuchi , Mitsuhiro Tanaka
IPC分类号： B60R2124
CPC分类号： C08L23/10 , B60R21/2165 , C08L23/16 , C08L53/02 , C08L53/025 , Y10T428/13 , Y10T428/1352 , C08L2666/24 , C08L2666/04 , C08L2666/02
摘要： An elastomer composition which comprises: (a) 100 parts by weight of a hydrogenated block copolymer prepared by hydrogenating a block copolymer that comprises: a polymer block A mainly comprising at least one vinyl aromatic compound; and a polymer block B mainly comprising at least one conjugate diene, and has a number average molecular weight of from 30,000 to 400,000 and a content of the polymer block A of from 10 to 50% by weight based on the weight of said block copolymer; (b) 5 to 900 parts by weight of a polypropylene mixture comprising: (b-1) 10 to 60% by weight of a polypropylene polymer having a propylene content of 85% by weight or more; and (b-2) 40 to 90% by weight of an ethylene-propylene copolymer rubber having a propylene content of 75% by weight or more, wherein the ethylene-propylene copolymer rubber in said mixture has an average dispersed particle size of not more than 2 &mgr;m and said mixture has a bending modulus of from 20 to 700 Mpa, a Shore D hardness of from 20 to 60 and a melt flow rate of from 10 to 60 g/10 minutes; and (c) 0 to 200 parts by weight of a hydrocarbon oil. Also disclosed is a housing cover of air bag apparatus, which comprises the elastomer composition.
摘要翻译：一种弹性体组合物，其包含：（a）100重量份通过氢化嵌段共聚物制备的氢化嵌段共聚物，所述嵌段共聚物包含：主要包含至少一种乙烯基芳族化合物的聚合物嵌段A; 和主要包含至少一种共轭二烯的聚合物嵌段B，其数均分子量为30,000至400,000，聚合物嵌段A的含量为所述嵌段共聚物的重量的10至50重量％; （b）5至900重量份的聚丙烯混合物，其包含：（b-1）10至60重量％的丙烯含量为85重量％以上的聚丙烯聚合物; 和（b-2）40〜90重量％的丙烯含量为75重量％以上的乙烯 - 丙烯共聚物橡胶，其中所述混合物中的乙烯 - 丙烯共聚物橡胶的平均分散粒径不大所述混合物的弯曲模量为20至700Mpa，肖氏D硬度为20至60，熔体流动速率为10至60g / 10分钟; 和（c）0〜200重量份烃油。还公开了一种气囊装置的壳体盖，其包括弹性体组合物。

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