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71. 发明授权

US5892188A Porous ferrite wave absorber 失效
标题翻译：多孔铁氧体波吸收器
公开(公告)号：US5892188A
公开(公告)日：1999-04-06
申请号：US685565
申请日：1996-07-24
申请人： Toshikatsu Hayashi , Hiroshi Kawamoto
发明人： Toshikatsu Hayashi , Hiroshi Kawamoto
IPC分类号： E04B1/74 , E04B1/82 , E04B1/84 , H01Q17/00
CPC分类号： E04B1/84 , H01Q17/004 , H01Q17/008 , E04B2001/742 , E04B2001/8419
摘要： A wave absorber is provided which has a wave absorption characteristic of 20 dB in a frequency band of 1 GHz to 20 GHz, is nonflammable, compact and lightweight, and has excellent durability. A porous ferrite is produced as the base material for which is an Ni--Zn type ferrite which has an excellent wave absorption characteristic in the high frequency range, and this serves as a wave absorber formed in the shape of a pyramid or triangular prism.
摘要翻译：提供了在1GHz至20GHz的频带中具有20dB的波吸收特性的波吸收体，是不易燃，紧凑且重量轻，并且具有优异的耐久性。制造多孔铁素体作为其基材，其是在高频范围内具有优异的吸波特性的Ni-Zn型铁氧体，并且其用作形成为金字塔形或三角形棱柱形状的波吸收体。

72. 发明授权

US5821761A Apparatus detecting an IC defect by comparing electron emissions from two integrated circuits 失效
标题翻译：通过比较来自两个集成电路的电子发射来检测IC缺陷的装置
公开(公告)号：US5821761A
公开(公告)日：1998-10-13
申请号：US781836
申请日：1997-01-10
申请人： Soichi Shida , Hiroshi Kawamoto , Hironobu Niijima
发明人： Soichi Shida , Hiroshi Kawamoto , Hironobu Niijima
IPC分类号： G01R31/28 , G01R31/307
CPC分类号： G01R31/307
摘要： Test patterns are applied to an IC under test under a test pattern address by which the first fail is caused and under other test pattern addresses. A defect candidate area is moved to the position where a charged particle beam can scan the area and defect candidate wiring portions are specified. A potential data of the specified wiring is acquired for each of the test patterns and stored in a memory. This process is process performed by sequentially stepping back the stop test pattern addresses. Then, a potential data of the specified wiring in thee specified area is similarly acquired for non-defect IC. The respective potential data of the IC under test and the non-defect IC are compared to locate the mismatch test pattern address and wiring.
摘要翻译：在测试模式地址下，测试模式被应用到测试模式地址，由此引起第一个故障，并在其他测试模式地址下。将缺陷候选区域移动到带电粒子束可以扫描该区域的位置，并且指定缺陷候选布线部分。针对每个测试图案获取指定布线的潜在数据并存储在存储器中。该过程是通过顺序地退回停止测试模式地址来执行的。然后，对于非缺陷IC，类似地获取指定区域中的指定布线的电位数据。将待测IC和非缺陷IC的各自的潜在数据进行比较，以确定不匹配测试模式地址和布线。

73. 发明授权

US5576151A Processing solution for silver halide color photographic materials and method for processing the materials with use of the processing solution 失效
标题翻译：卤化银彩色照相材料的加工溶液及使用该处理液处理材料的方法
公开(公告)号：US5576151A
公开(公告)日：1996-11-19
申请号：US426671
申请日：1995-04-21
申请人： Masakazu Morigaki , Hiroshi Kawamoto , Shigeru Nakamura
发明人： Masakazu Morigaki , Hiroshi Kawamoto , Shigeru Nakamura
IPC分类号： G03C11/00 , G03C7/30 , G03C7/42 , G03C7/407
CPC分类号： G03C7/3046 , G03C7/421
摘要： A processing solution for a silver halide color photographic material, said solution containing at least one kind of compound represented by formula (I) or (III): ##STR1##
摘要翻译：一种用于卤化银彩色照相材料的处理溶液，所述溶液含有至少一种式（I）或（III）表示的化合物：（I）（III）

74. 发明授权

US5519461A Optometer having optotype disc which rotates about its axis and another axis 失效
标题翻译：视光计具有围绕其轴线和另一轴线旋转的视标光盘
公开(公告)号：US5519461A
公开(公告)日：1996-05-21
申请号：US365929
申请日：1994-12-29
申请人： Hiroshi Kawamoto , Kazuaki Tange
发明人： Hiroshi Kawamoto , Kazuaki Tange
IPC分类号： A61B3/028 , A61B3/02 , A61B3/032 , G03B17/00
CPC分类号： A61B3/032
摘要： An optometer including a main body which has an observation window having a center axis, a rotary optotype disk having circumferentially arranged optotypes and disposed within the main body such that the optotype disk is rotatable about a rotary shaft so that one of the optotypes is brought into alignment with the center axis and viewed through the window, a driving disk rotatable about the center axis and rotatably supporting the rotary shaft such that the rotary shaft is parallel to and radially offset from the center axis, a rotary actuator for rotating the driving disk, and a stationary disk fixed within the main body coaxially with the driving disk and engaging the rotary shaft so as to cause rotation of the optotype disk about the rotary shaft when said driving disk is rotated about the center axis by the rotary actuator.
摘要翻译：一种包括具有具有中心轴的观察窗的主体的光学计数器，具有周向布置的视标的旋转视标盘，并且设置在主体内，使得视标盘可绕旋转轴旋转，使得一个视标进入与中心轴线对准并通过窗口观察;驱动盘，其能够围绕中心轴线旋转并且可旋转地支撑旋转轴，使得旋转轴平行于并且径向偏离中心轴;旋转致动器，用于旋转驱动盘; 以及与所述驱动盘同轴地固定在所述主体内并与所述旋转轴接合的固定盘，以便当所述驱动盘通过所述旋转致动器围绕所述中心轴线旋转时，使所述视标盘围绕所述旋转轴旋转。

75. 发明授权

US5343282A Color balance adjusting apparatus for full-color copier 失效
标题翻译：全彩复印机色平衡调节装置
公开(公告)号：US5343282A
公开(公告)日：1994-08-30
申请号：US99739
申请日：1993-07-30
申请人： Yuichi Kazaki , Yasutaka Maeda , Hiroshi Kawamoto , Hideyuki Nishimura , Katsuhiro Nagayama
发明人： Yuichi Kazaki , Yasutaka Maeda , Hiroshi Kawamoto , Hideyuki Nishimura , Katsuhiro Nagayama
IPC分类号： G03G15/00 , G03G15/01 , G03G15/04 , G03G15/043 , G03G15/08 , G03G21/00
CPC分类号： G03G15/011 , G03G15/01
摘要： A color balance adjusting apparatus is used for a full color copier in which an original image is illuminated by a light source; the illuminated image is exposed onto a photoreceptor to form electrostatic latent images corresponding to first, second and third colors for creating a color image; and each of the formed electrostatic latent images is developed into a visualized toner image. The color balance adjusting apparatus includes an infrared sensor for detecting toner density of the toner image formed with a toner having any one color of the first, second and third colors. The apparatus further includes automatic adjustment means which determines a relation of light intensity to toner density detected for one color by varying light intensity of said light source, and which determines optimal light intensity for the other two colors as predetermined functions of obtained optimal light intensity. Using this apparatus, automatic adjustment of the color balance for each copy mode can be effected in a short time with lesser consumption of electricity and supplies.
摘要翻译：色彩平衡调节装置用于其中原始图像被光源照射的全色复印机; 将照明图像曝光到感光体上以形成对应于第一，第二和第三颜色的静电潜像，以产生彩色图像; 并且每个形成的静电潜像被显影成可视化的调色剂图像。色平衡调节装置包括红外传感器，用于检测由具有第一，第二和第三颜色的任何一种颜色的调色剂形成的调色剂图像的调色剂浓度。该装置还包括自动调节装置，其通过改变所述光源的光强度来确定针对一种颜色检测的光强度与调色剂浓度的关系，并且确定其它两种颜色的最佳光强度作为获得的最佳光强度的预定函数。使用该装置，可以在较短的时间内对每种复印模式的颜色平衡进行自动调整，同时电力和耗材的消耗较少。

76. 发明授权

US5157629A Selective application of voltages for testing storage cells in semiconductor memory arrangements 失效
标题翻译：选择性地应用电压以测试半导体存储器布置中的存储单元
公开(公告)号：US5157629A
公开(公告)日：1992-10-20
申请号：US336345
申请日：1989-04-10
申请人： Katsuyuki Sato , Hiroshi Kawamoto , Kazumasa Yanagisawa
发明人： Katsuyuki Sato , Hiroshi Kawamoto , Kazumasa Yanagisawa
IPC分类号： G11C11/4074 , G11C29/50
CPC分类号： G11C29/50016 , G11C11/4074 , G11C29/50 , G11C11/401 , G11C2029/5004
摘要： A dynamic RAM is provided with a plurality of 1-MOSFET memory cells, each having a storage capacitor and a switching MOSFET coupled to one electrode of the storage capacitor. The other electrode of each of the storage capacitors is coupled to a switching circuit which controls the voltage which is applied to the capacitor. The switching circuit is, in turn, coupled to both a voltage generating circuit (which preferably provides a voltage of 1/2 Vcc) and a voltage supply circuit which is set to provide predetermined test voltages. Thus, by operating the switching circuit, a voltage of 1/2 Vcc can be applied to the memory cell capacitors during normal operation of the dynamic RAM, and the predetermined test voltages can be applied to the memory cell capacitors during a testing operation.
摘要翻译：动态RAM设置有多个1-MOSFET存储单元，每个具有存储电容器和耦合到存储电容器的一个电极的开关MOSFET。每个存储电容器的另一个电极耦合到控制施加到电容器的电压的开关电路。开关电路又耦合到电压产生电路（其优选地提供1/2Vcc的电压）和被设置为提供预定测试电压的电压供应电路两者。因此，通过操作开关电路，在动态RAM的正常操作期间可以向存储单元电容器施加1/2Vcc的电压，并且可以在测试操作期间将预定的测试电压施加到存储单元电容器。

77. 发明授权

US5119332A Semiconductor memory 失效
标题翻译：半导体存储器
公开(公告)号：US5119332A
公开(公告)日：1992-06-02
申请号：US515345
申请日：1990-04-30
申请人： Katsuhiro Shimohigashi , Hiroo Masuda , Hiroshi Kawamoto
发明人： Katsuhiro Shimohigashi , Hiroo Masuda , Hiroshi Kawamoto
IPC分类号： G11C11/409 , G11C11/4091 , G11C11/4096 , G11C11/4097 , H01L23/522 , H01L27/108
CPC分类号： H01L27/108 , G11C11/409 , G11C11/4091 , G11C11/4096 , G11C11/4097 , H01L23/522 , H01L27/10805 , H01L2924/0002 , H01L2924/3011
摘要： A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of intersection between the data lines and the word lines. The RAM includes a P-type semiconductor substrate and an N-type well region formed in the substrate. The memory cells are disposed within the well, and the sense amplifier, which is connected to the date lines, is constructed to a pair of N-channel MOSFETs formed in the semiconductor substrate and a pair of P-channel MOSFETs formed in the well region.
摘要翻译：单元存储单元型的动态RAM集成电路设置有多条数据线，读出放大器，以与数据线相交的方式设置的多条字线，以及设置在数据线上的存储单元数据线与字线之间的交点。 RAM包括P型半导体衬底和形成在衬底中的N型阱区。存储单元设置在阱内，并且连接到日期线的读出放大器被构造成形成在半导体衬底中的一对N沟道MOSFET和形成在阱区中的一对P沟道MOSFET 。

78. 发明授权

US4938219A Electrocardiographic electrode 失效
标题翻译：心电图电极
公开(公告)号：US4938219A
公开(公告)日：1990-07-03
申请号：US423590
申请日：1989-10-17
申请人： Hiroyoshi Ishii , Kenzo Suzuki , Misao Kaneko , Hiroshi Kawamoto , Chuji Shimizu , Yasuaki Onodera
发明人： Hiroyoshi Ishii , Kenzo Suzuki , Misao Kaneko , Hiroshi Kawamoto , Chuji Shimizu , Yasuaki Onodera
IPC分类号： A61B5/0408 , A61B5/0402
CPC分类号： A61B5/0408
摘要： An electrocardiographic electrode is disclosed, which comprises an electrode element consisting of a synthetic resin electrode element having a head portion with a lead attached thereto and having a straight recessed portion, a neck portion having an engagement portion narrower than the head portion and capable of being engaged in an expansible member and a straight portion continuous to the straight recessed portion of the head portion and a bottom portion formed under, broader than and supporting the neck portion and to be held in contact with the skin of a living body, the outer surface of the synthetic resin electrode element member being imparted with electric conductivity by coated metal powder, an expansible member engagedly locked in the engagement portion of the neck portion, and an adhesive film consisting of an adhesive, having a central portion and secured to the expansible member to be held in close contact with the skin of the living body.

79. 发明授权

US4893157A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4893157A
公开(公告)日：1990-01-09
申请号：US136939
申请日：1987-12-23
申请人： Kazuyuki Miyazawa , Yasunori Yamaguchi , Hiroshi Kawamoto
发明人： Kazuyuki Miyazawa , Yasunori Yamaguchi , Hiroshi Kawamoto
IPC分类号： H01L27/06 , H01L27/02
CPC分类号： H01L27/0251
摘要： A protective circuit consisting of a resistor and MOSFET in a diode form and a switching element are connected to a bonding pad in order to prevent destruction of an internal circuit consisting of one or more MOSFETs. The switching element may consist of a parasitic MOSFET whose source and drain regions are formed by well regions. One of the well regions is connected to a semiconductor region as a guard ring.
摘要翻译：由二极管形式的电阻器和MOSFET组成的保护电路和开关元件连接到焊盘，以防止由一个或多个MOSFET组成的内部电路的破坏。开关元件可以由源极和漏极区由阱区形成的寄生MOSFET组成。阱区中的一个连接到作为保护环的半导体区域。

80. 发明授权

US4539658A Semiconductor memory 失效
公开(公告)号：US4539658A
公开(公告)日：1985-09-03
申请号：US638982
申请日：1984-08-08
申请人： Katsuhiro Shimohigashi , Hiroo Masuda , Kunihiko Ikuzaki , Hiroshi Kawamoto
发明人： Katsuhiro Shimohigashi , Hiroo Masuda , Kunihiko Ikuzaki , Hiroshi Kawamoto
IPC分类号： G11C11/419 , G11C11/409 , G11C11/4091 , G11C11/4096 , G11C11/4097 , H01L21/822 , H01L21/8238 , H01L21/8242 , H01L23/522 , H01L27/04 , H01L27/092 , H01L27/10 , H01L27/108 , G11C11/40 , H01L29/78
CPC分类号： G11C11/409 , G11C11/4091 , G11C11/4096 , G11C11/4097 , H01L23/522 , H01L27/108 , H01L27/10805 , H01L2924/0002 , H01L2924/3011 , Y10S148/164
摘要： A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of intersection between the data lines and the word lines. The RAM includes a P-type semiconductor substrate and an N-type well region formed in the substrate. The memory cells are disposed within the well, and the sense amplifier, which is connected to the data lines, is constructed of a pair of N-channel MOSFETs formed in the semiconductor substrate and a pair of P-channel MOSFETs formed in the well region.

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