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    • 75. 发明授权
    • Insulated gate type semiconductor apparatus with a control circuit
    • 具有控制电路的绝缘栅型半导体装置
    • US06385025B2
    • 2002-05-07
    • US09797983
    • 2001-03-05
    • Kozo SakamotoIsao Yoshida
    • Kozo SakamotoIsao Yoshida
    • H02H300
    • H03K17/0828H03K17/0822H03K2017/0806
    • A semiconductor apparatus such as a power MOSFET, an IGBT, or the like is provided having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. To prevent erroneous operation, the control circuit controls so that when the voltage of a gate terminal is positive relative to that of a source terminal, a first switch circuit is turned on, when the voltage of the gate terminal is negative relative to that of the source terminal, a second switch circuit is turned on, and when the gate terminal and the source terminal have an almost same potential and a drain terminal has a high potential, the second switch circuit is turned on, thereby reducing leakage current from the drain terminal to the gate terminal.
    • 提供诸如功率MOSFET,IGBT等的半导体装置,其中具有诸如过热保护电路和过电流保护电路的控制电路,其实现高速操作和防止错误 由寄生器件引起的操作。 为了防止错误操作,控制电路进行控制,使得当栅极端子的电压相对于源极端子的电压为正时,第一开关电路导通,当栅极端子的电压相对于栅极端子的电压为负时 源极端子,第二开关电路导通,并且当栅极端子和源极端子具有几乎相同的电位且漏极端子具有高电位时,第二开关电路导通,从而减少漏极端子的漏电流 到门终端。
    • 76. 发明授权
    • V-ribbed power transmission belt
    • V型动力传动带
    • US06361462B1
    • 2002-03-26
    • US09490480
    • 2000-01-24
    • Toshimichi TakadaKazutoshi IshidaYorifumi HinenoIsao Yoshida
    • Toshimichi TakadaKazutoshi IshidaYorifumi HinenoIsao Yoshida
    • F16G506
    • B32B25/02F16G5/20
    • A power transmission belt having a body with a length, an inside, an outside, and laterally spaced sides. The body has a bonding rubber layer in which elongate load carrying cords are embedded to extend lengthwise of the body. The body has a first layer on the inside of the bonding rubber layer in which a plurality of laterally spaced ribs are formed extending lengthwise of the body, and a second layer on the outside of the bonding rubber layer in which a plurality of laterally spaced ribs are formed extending lengthwise of the body. The bonding rubber layer has a sulfur-crosslinked rubber composition including an ethylene-&agr;-olefin elastomer. At least one of the first and second layers has a crosslinking product that is an organic peroxide-crosslinked rubber composition including an ethylene-&agr;-olefin elastomer.
    • 一种动力传动带,其具有长度,内侧,外侧和侧向间隔开的主体。 主体具有接合橡胶层,其中细长载荷承载绳被嵌入以延伸到身体的纵向。 主体在接合橡胶层的内侧具有第一层,其中沿主体纵向延伸形成有多个横向隔开的肋,以及在接合橡胶层的外侧上的第二层,其中多个横向隔开的肋 形成在身体纵向延伸。 接合橡胶层具有包含乙烯-α-烯烃弹性体的硫交联橡胶组合物。 第一层和第二层中的至少一层具有交联产物,其是包含乙烯-α-烯烃弹性体的有机过氧化物交联的橡胶组合物。
    • 78. 发明授权
    • Insulated gate type semiconductor apparatus with a control circuit
    • 具有控制电路的绝缘栅型半导体装置
    • US06201677B1
    • 2001-03-13
    • US09489736
    • 2000-01-21
    • Kozo SakamotoIsao Yoshida
    • Kozo SakamotoIsao Yoshida
    • H02H308
    • H03K17/0828H03K17/0822H03K2017/0806
    • There is disclosed a semiconductor apparatus such as a power MOSFET, an IGBT, or the like having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. In order to prevent erroneous operation of a power MOSFET 30 and a protection circuit 21 caused by a parasitic npn transistor 29 of an MOSFET 32, a control circuit 20 controls so that when the voltage of a gate terminal 2 is positive relative to that of a source terminal 3, a switch circuit SW3 is turned on, when the voltage of the gate terminal 2 is negative relative to that of the source terminal 3, a switch circuit SW2 is turned on, and when the gate terminal 2 and the source terminal 3 have an almost same potential and a drain terminal 1 has a high potential, the switch circuit SW2 is turned on. By adding such a control circuit, an insulated gate semiconductor apparatus having therein the protection circuit according to the invention can reduce a leakage current flowing from the drain terminal to the gate terminal when a negative voltage is applied to the gate and can operate at high speed without causing drop of a drain breakdown voltage.
    • 公开了具有诸如过热保护电路和过电流保护电路等控制电路的功率MOSFET,IGBT等半导体装置,实现了高速运行和防止 由寄生器件引起的错误操作。为了防止由MOSFET32的寄生npn晶体管29引起的功率MOSFET 30和保护电路21的错误操作,控制电路20控制,使得当栅极端子 2相对于源极端子3是正的,开关电路SW3导通,当栅极端子2的电压相对于源极端子3的电压为负时,开关电路SW2导通,并且当 栅极端子2和源极端子3具有几乎相同的电位,并且漏极端子1具有高电位,开关电路SW2导通。通过添加这种控制电路,绝缘栅极半导体装置h 其中根据本发明的保护电路可以减小当向栅极施加负电压时能够从漏极端子流到栅极端子的漏电流,并且可以在不引起漏极击穿电压下降的情况下高速工作。