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71. 发明授权

US08932796B2 Hybrid photoresist composition and pattern forming method using thereof 有权
公开(公告)号：US08932796B2
公开(公告)日：2015-01-13
申请号：US13293672
申请日：2011-11-10
申请人： Kuang-Jung Chen , Wu-Song S. Huang , Sen Liu , Steven J. Holmes , Gregory Breyta
发明人： Kuang-Jung Chen , Wu-Song S. Huang , Sen Liu , Steven J. Holmes , Gregory Breyta
IPC分类号： G03F7/004 , G03F7/20 , G03F7/028 , G03F7/038 , G03F7/039 , G03F7/095
CPC分类号： G03F7/203 , G03F7/0045 , G03F7/028 , G03F7/0382 , G03F7/0392 , G03F7/095 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.

72. 发明授权

US08723413B2 Touch-sensing display apparatus and fabricating method thereof 有权
标题翻译：触摸感应显示装置及其制造方法
公开(公告)号：US08723413B2
公开(公告)日：2014-05-13
申请号：US12699065
申请日：2010-02-03
申请人： Kuang-Jung Chen
发明人： Kuang-Jung Chen
IPC分类号： H01L51/50
CPC分类号： G06F3/0412 , G06F3/044 , G06F2203/04111 , H01L27/323
摘要： A touch-sensing display apparatus and a fabricating method thereof are provided. The touch-sensing display apparatus includes a substrate, an organic light emitting diode (OLED) display layer, and a touch structure. The OLED display layer is between the substrate and the touch structure apparatus and directly contacts with the touch structure. The touch structure includes a first water/oxygen barrier layer, an electromagnetic interference (EMI) shielding layer, a sensing circuit layer, and a second water/oxygen barrier layer. The first water/oxygen barrier layer is located on the OLED display layer. The EMI shielding layer is located on the first water/oxygen barrier layer. The sensing circuit layer is located on the EMI shielding layer. The second water/oxygen barrier layer is located on the sensing circuit layer.
摘要翻译：提供了一种触摸感测显示装置及其制造方法。触摸感测显示装置包括衬底，有机发光二极管（OLED）显示层和触摸结构。 OLED显示层位于基板和触摸结构装置之间，并且与触摸结构直接接触。触摸结构包括第一水/氧阻隔层，电磁干扰（EMI）屏蔽层，感测电路层和第二水/氧阻挡层。第一水/氧阻挡层位于OLED显示层上。 EMI屏蔽层位于第一水/氧阻隔层上。感测电路层位于EMI屏蔽层上。第二水/氧阻挡层位于感测电路层上。

73. 发明申请

US20130288178A1 PHOTORESIST COMPOSITION CONTAINING A PROTECTED HYDROXYL GROUP FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF 有权
标题翻译：含有保护性羟基的负离子组合物及其形成方法的光电组合物
公开(公告)号：US20130288178A1
公开(公告)日：2013-10-31
申请号：US13457735
申请日：2012-04-27
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
IPC分类号： G03F7/20 , G03F7/027 , G03F7/004
CPC分类号： G03F7/0382 , G03F7/021 , G03F7/0397 , G03F7/20 , G03F7/325
摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
摘要翻译：本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。光致抗蚀剂组合物包括成像聚合物，交联剂和辐射敏感的酸发生剂。成像聚合物包括具有酸不稳定部分取代的羟基的单体单元。图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

74. 发明授权

US08446730B2 Package of environmental sensitive element 有权
公开(公告)号：US08446730B2
公开(公告)日：2013-05-21
申请号：US12703155
申请日：2010-02-09
申请人： Kuang-Jung Chen , Shu-Tang Yeh , Jia-Chong Ho
发明人： Kuang-Jung Chen , Shu-Tang Yeh , Jia-Chong Ho
IPC分类号： H05K1/00
CPC分类号： H01L51/0097 , H01L51/5246 , H01L51/5253 , H01L51/5256 , H01L2251/5338 , Y02E10/549 , Y10T428/239
摘要： A package of an environmental sensitive element including a flexible substrate, an environmental sensitive element, a flexible sacrificial layer and a packaging structure is provided. The environmental sensitive element is disposed on the flexible substrate. The flexible sacrificial layer is disposed on the environmental sensitive element, wherein the environmental sensitive element includes a plurality of first thin films and the flexible sacrificial layer includes a plurality of second thin films. The bonding strength between two adjacent second thin films is substantially equal to or lower than the bonding strength between two adjacent first thin films. Further, the packaging structure covers the environmental sensitive element and the flexible sacrificial layer.

75. 发明申请

US20130122421A1 HYBRID PHOTORESIST COMPOSITION AND PATTERN FORMING METHOD USING THEREOF 有权
标题翻译：混合光电组合物和使用其的图案形成方法
公开(公告)号：US20130122421A1
公开(公告)日：2013-05-16
申请号：US13293672
申请日：2011-11-10
申请人： Kuang-Jung Chen , Wu-Song S. Huang , Sen Liu , Steven J. Holmes , Gregory Breyta
发明人： Kuang-Jung Chen , Wu-Song S. Huang , Sen Liu , Steven J. Holmes , Gregory Breyta
IPC分类号： G03F7/20 , G03F7/027 , G03F7/004
CPC分类号： G03F7/203 , G03F7/0045 , G03F7/028 , G03F7/0382 , G03F7/0392 , G03F7/095 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
摘要翻译：本发明涉及一种用于改进分辨率的混合光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。光致抗蚀剂组合物包括辐射敏感酸产生剂，交联剂和具有疏水性单体单元的聚合物和含有羟基的亲水性单体单元。至少一些羟基被具有低活化能的酸不稳定部分保护。光致抗蚀剂能够产生对单次曝光的混合响应。图案形成方法利用混合响应在光致抗蚀剂层中形成图案化结构。本发明的光致抗蚀剂组合物和图案形成方法可用于打印具有精确图像控制的特征，特别是小尺寸的空间。

76. 发明申请

US20120122031A1 PHOTORESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF 审中-公开
标题翻译：用于负面发展的光电组合物及其使用的图案形成方法
公开(公告)号：US20120122031A1
公开(公告)日：2012-05-17
申请号：US12946232
申请日：2010-11-15
申请人： Kuang-Jung Chen , Sen Liu , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Sen Liu , Wu-Song Huang , Wai-Kin Li
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/325 , G03F7/0397
摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomeric unit having a pendant acid labile moiety and a second monomeric unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
摘要翻译：本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。光致抗蚀剂组合物包括成像聚合物和辐射敏感酸产生剂。成像聚合物包括具有侧链酸不稳定部分的第一单体单元和包含反应性醚部分，异氰化物部分或异氰酸酯部分的第二单体单元。图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

77. 发明授权

US08163466B2 Method for selectively adjusting local resist pattern dimension with chemical treatment 有权
标题翻译：通过化学处理选择性地调整局部抗蚀剂图案尺寸的方法
公开(公告)号：US08163466B2
公开(公告)日：2012-04-24
申请号：US12371956
申请日：2009-02-17
申请人： Kuang-Jung Chen , Wai-Kin Li
发明人： Kuang-Jung Chen , Wai-Kin Li
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/40
CPC分类号： G03F7/40 , G03F7/0035
摘要： A method forms a first patterned mask (comprising rectangular features and/or rounded openings) on a planar surface and forms a second patterned mask on the first patterned mask and the planar surface. The second patterned mask covers protected portions of the first patterned mask and the second patterned mask reveals exposed portions of the first patterned mask. The method treats the exposed portions of the first patterned mask with a chemical treatment that reduces the size of the exposed portions to create an altered first patterned mask.
摘要翻译：一种方法在平坦表面上形成第一图案化掩模（包括矩形特征和/或圆形开口）并且在第一图案化掩模和平面表面上形成第二图案化掩模。第二图案化掩模覆盖第一图案化掩模的受保护部分，并且第二图案化掩模揭示第一图案化掩模的暴露部分。该方法通过减少暴露部分的尺寸以产生改变的第一图案化掩模的化学处理来处理第一图案化掩模的暴露部分。

78. 发明申请

US20120064278A1 PACKAGE OF ENVIRONMENTAL SENSITIVE ELEMENT AND ENCAPSULATION METHOD THEREOF 审中-公开
标题翻译：环境敏感元件的包装及其包装方法
公开(公告)号：US20120064278A1
公开(公告)日：2012-03-15
申请号：US12915018
申请日：2010-10-29
申请人： Kuang-Jung Chen
发明人： Kuang-Jung Chen
IPC分类号： B32B33/00 , B44C1/22 , B32B3/02
CPC分类号： H01L51/5246 , Y10T428/239
摘要： A package of environmental sensitive element including a first substrate, a second substrate, an environmental sensitive element and a filler is provided. The second substrate is disposed above the first substrate and has a first barrier structure. The first barrier structure is located between the first substrate and the second substrate. The first barrier structure and the second substrate are integrally formed and made of the same material. The environmental sensitive element is disposed on the first substrate and located between the first substrate and the second substrate. The first barrier structure surrounds the environmental sensitive element. The filler is disposed between the first substrate and the second substrate and covers the environmental sensitive element and the first barrier structure.
摘要翻译：提供包括第一基板，第二基板，环境敏感元件和填充物的环境敏感元件的封装。第二基板设置在第一基板上方并具有第一阻挡结构。第一阻挡结构位于第一基板和第二基板之间。第一阻挡结构和第二基板一体地形成并由相同的材料制成。环境敏感元件设置在第一基板上并且位于第一基板和第二基板之间。第一屏障结构围绕环境敏感元件。填料设置在第一基板和第二基板之间并且覆盖环境敏感元件和第一阻挡结构。

79. 发明申请

US20110256486A1 PHOTOLITHOGRAPHY FOCUS IMPROVEMENT BY REDUCTION OF AUTOFOCUS RADIATION TRANSMISSION INTO SUBSTRATE 有权
标题翻译：通过减少自适应辐射传输到基板中的光刻技术改进
公开(公告)号：US20110256486A1
公开(公告)日：2011-10-20
申请号：US13158901
申请日：2011-06-13
申请人： Timothy A. Brunner , Sean D. Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy A. Brunner , Sean D. Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
IPC分类号： G03F7/20
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译：防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

80. 发明申请

US20100330810A1 METHOD FOR REMOVING THRESHOLD VOLTAGE ADJUSTING LAYER WITH EXTERNAL ACID DIFFUSION PROCESS 有权
标题翻译：用外部酸性扩散过程去除阈值电压调节层的方法
公开(公告)号：US20100330810A1
公开(公告)日：2010-12-30
申请号：US12490353
申请日：2009-06-24
申请人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
IPC分类号： H01L21/31
CPC分类号： H01L21/31122 , H01L21/823842 , H01L21/823857
摘要： The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.
摘要翻译：本发明提供一种形成阈值电压调节的栅极叠层的方法，其中使用外部酸扩散工艺来从半导体衬底的一个器件区域选择性地去除一部分阈值电压调节层。外部酸扩散方法使用酸性聚合物，其在烘烤时表现出酸浓度的增加，其可以扩散到阈值电压调节层的下部暴露部分。扩散的酸与阈值电压调节层的暴露部分反应，提供酸反应层，与不暴露于扩散的酸的阈值电压调节层的横向相邻部分相比，可以选择性地除去酸反应层。

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